Untitled
Abstract: No abstract text available
Text: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a Qg (Typ.)
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SiZ730DT
2002/95/EC
SiZ730DT-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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234B
Abstract: No abstract text available
Text: New Product SiZ790DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0047 at VGS = 10 V 35a 0.0059 at VGS = 4.5 V
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SiZ790DT
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
234B
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 6T FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C
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UL94-V0
23-AVR-09
17-NOV-08
31-DEC-07
20-MAR-07
27-FEB-07
26-OCT-05
04-OCT-04
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1214C
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 6T FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C
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UL94-V0
17-FEB-09
17-NOV-08
04-DEC-07
27-FEB-07
20-JAN-05
1214C
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5A02
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 6T FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: TIN QUALITY CLASS: 25 MATING CYCLES PITCH: 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C
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UL94-V0
23-AVR-09
17-NOV-08
31-DEC-07
23-FEB-07
19-DEC-06
19-JAN-04
5A02
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12v bulb 220 supply diagram
Abstract: LED with 3v INPUT VOLTAGE CAT4201 CAT4201TD-GT3 CMDSH05-4
Text: CAT4201 350mA High Efficiency Step Down LED Driver FEATURES DESCRIPTION LED drive current up to 350mA The CAT4201 is a high efficiency step-down converter optimized to drive high current LEDs. A patented switching control algorithm allows highly efficient and
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CAT4201
350mA
350mA
CAT4201
MD-5025
12v bulb 220 supply diagram
LED with 3v INPUT VOLTAGE
CAT4201TD-GT3
CMDSH05-4
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tlo 84
Abstract: CAT3648 CAT3648HV3-GT2 MO-220
Text: CAT3648 4-Channel Ultra High Efficiency Quad-Mode LED Driver with 32 Dimming Levels DESCRIPTION FEATURES The CAT3648 is a high efficiency quad-mode fractional charge pump that can drive up to four LEDs programmable by a one wire digital interface. The
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CAT3648
CAT3648
MD-5031
tlo 84
CAT3648HV3-GT2
MO-220
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MD-5034
Abstract: MD 5034 LED 2ma Md5034 soic-16 mo 5034 MS-012 soic16 CAT4008 CAT4008V-T1 D 739
Text: CAT4008 8-Channel Constant Current LED Driver FEATURES DESCRIPTION 8 Constant current-sink channels The CAT4008 is an 8 channel constant current driver for LED billboard and other general display applications. LED channel currents are programmed together via an external RSET resistor. Low output
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CAT4008
CAT4008
100mA
25MHz
100mA
300mV
25MHz
MD-5034
MD 5034
LED 2ma
Md5034
soic-16
mo 5034
MS-012 soic16
CAT4008V-T1
D 739
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Untitled
Abstract: No abstract text available
Text: SiZ710DT Vishay Siliconix N-Channel 20 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0068 at VGS = 10 V 16a 0.0090 at VGS = 4.5 V 16a 0.0033 at VGS = 10 V 35a 0.0043 at VGS = 4.5 V 35a Qg (Typ.) 6.9 nC 18.2 nC
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SiZ710DT
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SI4174DY-T1-GE3
Abstract: si4174dy A1827
Text: New Product Si4174DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0095 at VGS = 10 V 17 0.013 at VGS = 4.5 V 14.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Si4174DY
Si4174DY-T1-GE3
18-Jul-08
A1827
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Untitled
Abstract: No abstract text available
Text: New Product SiZ700DT Vishay Siliconix N-Channel 20-V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 20 Channel-2 20 RDS(on) () ID (A) 0.0086 at VGS = 10 V 16a 0.0108 at VGS = 4.5 V 16a 0.0058 at VGS = 10 V 16a 0.0066 at VGS = 4.5 V 16a Qg (Typ.)
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SiZ700DT
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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si8445
Abstract: Si8445DB
Text: Si8445DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.084 at VGS = - 4.5 V - 9.8 0.100 at VGS = - 2.5 V - 9.0 VDS (V) - 20 0.120 at VGS = - 1.8 V - 5.0 0.155 at VGS = - 1.5 V - 2.0 0.495 at VGS = - 1.2 V - 0.5
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Si8445DB
11-Mar-11
si8445
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Untitled
Abstract: No abstract text available
Text: New Product SiZ730DT Vishay Siliconix N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () ID (A) 0.0093 at VGS = 10 V 16a 0.0130 at VGS = 4.5 V 16a 0.0039 at VGS = 10 V 35a 0.0053 at VGS = 4.5 V 35a Qg (Typ.)
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SiZ730DT
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SiR462DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0079 at VGS = 10 V 30a 0.010 at VGS = 4.5 V 30a • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested
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SiR462DP
SiR462DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7106DN Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125°C Temperature Range
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Si7106DN
18-Jul-08
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sis430dn
Abstract: No abstract text available
Text: SPICE Device Model SiS430DN Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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SiS430DN
18-Jul-08
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A4539
Abstract: 82728 SiS424DN
Text: SPICE Device Model SiS424DN Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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SiS424DN
18-Jul-08
A4539
82728
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Si7272DP
Abstract: No abstract text available
Text: SPICE Device Model Si7272DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si7272DP
18-Jul-08
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Si3865CDV
Abstract: No abstract text available
Text: New Product Si3865CDV Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V (VIN) 1.8 to 12 RDS(on) (Ω) ID (A) 0.060 at VIN = 4.5 V 2.8 0.095 at VIN = 2.5 V 2.2 0.130 at VIN = 1.8 V 1.9 • • • • • • 60 mΩ Low RDS(on) TrenchFET
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Si3865CDV
18-Jul-08
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SiR438DP
Abstract: No abstract text available
Text: SPICE Device Model SiR438DP Vishay Siliconix N-Channel 25-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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SiR438DP
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 6T FLAMABILITY RATING: UL94-V0 COLOR: BLACK PITCH: 3.00MM A ENVIRONMENTAL OPERATING TEMPERATURE: -25 UP TO 105°C COMPLIANCE: LEAD FREE AND ROHS ELECTRICAL CURRENT RATING:5A WORKING VOLTAGE: 250V AC
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UL94-V0
25-JAN-07
30-JUN-05
18-JUN-04
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Si8445DB
Abstract: No abstract text available
Text: Si8445DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.084 at VGS = - 4.5 V - 9.8 0.100 at VGS = - 2.5 V - 9.0 VDS (V) - 20 0.120 at VGS = - 1.8 V - 5.0 0.155 at VGS = - 1.5 V - 2.0 0.495 at VGS = - 1.2 V - 0.5
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Si8445DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si8445DB
Abstract: No abstract text available
Text: Si8445DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) (Ω) - 20 0.084 at VGS = - 4.5 V - 9.8 0.100 at VGS = - 2.5 V - 9.0 0.120 at VGS = - 1.8 V - 5.0 0.155 at VGS = - 1.5 V - 2.0 0.495 at VGS = - 1.2 V - 0.5
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Si8445DB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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si4174
Abstract: No abstract text available
Text: New Product Si4174DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0095 at VGS = 10 V 17 0.013 at VGS = 4.5 V 14.5 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Si4174DY
Si4174DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si4174
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