03E1
Abstract: 00CF ISD33000 b0334 04D5
Text: ""### $
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LED DRIVER ana 618
Abstract: isd1400 application ISD1420 ISD2560 ISD2500 isd1420 addressing Information Storage Devices ISD1500 LM386 speaker ISD1110
Text: ISD1200 Series ISD1400 Series ISD1500 Series ISD2500 Series ISD33000 Series
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ISD1200
ISD1400
ISD1500
ISD2500
ISD33000
ISD4003
ISD1100
ISD4002
ISD1000A
LED DRIVER ana 618
isd1400 application
ISD1420
ISD2560
isd1420 addressing
Information Storage Devices
LM386 speaker
ISD1110
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Untitled
Abstract: No abstract text available
Text: Altech Corporation 35 Royal Road Flemington, NJ 08822-6000 P 908.806.9400 • F 908.806.9490 www.altechcorp.com Altech Corp. 348-102013-2M Printed October 2013 Altech Corp. expands its Busbar System and Power Distribution Lines! Since 1984, Altech Corporation has grown to become a leading supplier of automation and industrial
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348-102013-2M
5-150A
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108 046f
Abstract: 03e1 046F 044f 03C24 b 0334 046b
Text: ! % &
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06K0B
108 046f
03e1
046F
044f
03C24
b 0334
046b
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ALTECH MCB PRICE LIST
Abstract: VDE0660 14-1AWG M4X30 IEC 60947-2 military relay E220514 E301611 38074 mccb DATASHEET
Text: w w w . a l t e c h c o Altech Corporation 35 Royal Road Flemington, NJ 08822-6000 Phone 908 806-9400 Fax (908) 806-9490 www.altechcorp.com Altech Corp. 348-052008-7.5M r p . c o m Altech Corp. expands its Busbar System and Power Distribution Lines! Since 1984, Altech Corporation has grown to become a leading supplier of automation and industrial
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5-150A
ALTECH MCB PRICE LIST
VDE0660
14-1AWG
M4X30
IEC 60947-2
military relay
E220514
E301611
38074
mccb DATASHEET
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BUSBAR
Abstract: 40017 E98082 PVC 90A material datasheet circuit-breakers UL1059 M4X30 copper BUSBAR size
Text: Modular APD System Altech’s modular Power Distribution APD System is a new way to simplify existing wiring methods! The modular APD system provides flexible solutions for busing common power to many different electrical components. Components can be easily added or removed using quick disconnects saving
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10AWG
12AWG
14AWG
16AWG
BUSBAR
40017
E98082
PVC 90A material datasheet
circuit-breakers
UL1059
M4X30
copper BUSBAR size
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Busbars A
Abstract: No abstract text available
Text: Modular APD System Altech’s modular Power Distribution APD System is a new way to simplify existing wiring methods! The modular APD system provides flexible solutions for busing common power to many different electrical components. Components can be easily added or removed using quick disconnects saving
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10AWG
12AWG
14AWG
16AWG
Busbars A
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17bs
Abstract: No abstract text available
Text: DAICO INDUSTRIES INC blE D • □ □ D 17bS SSI ■ DAI FEA TU RES ■ 3 0 - 3 0 0 MHz ■ 1 dB LSB, 31 dB Range ■ Constant Phase ■ 2.2 dB Insertion Loss ■ +37 dBm 3rd Order Intercept ■ TTL Driver ■ 38 Pin DIP IN/OUT 38 GNO - -37 36
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Hz300
17bs
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GT25H101
Abstract: GT25H Opto Speed SA
Text: TOSHIBA {DIS CR ETE/O PT O! 90D 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA D E_| ciO,:17BSD D D l b l ñ ? TD SEMICONDUCTOR 16187 1 D T - 3 3 ' ^ 3 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT25H101 TECHNICAL DATA SILICON N-CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS.
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15BKAX
GT25H101-3
GT25H101
GT25H
Opto Speed SA
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Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS 47E D Marchi 990 Edition 2.2 DATA SHEET 3 7 4 ^ 2 OOnSll 1 • FUJITSU MB81C4256-70/-80/-10/-12 CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 256 x 4 Bits Fast Page Mode DRAM The Fujitsu MB81C4256 is a CMOS, fully decoded dynamic RAM organized as
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MB81C4256-70/-80/-10/-12
MB81C4256
144words
B81C4256
26-LEAD
LCC-26P-M04)
C26064S-1C
MB81C4256-70
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Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS 23E D 37H171.2 OOQVtba T • T - ^ z - i- io October 1989 Edition 4.0 f u jÌ t s u DATA SH EETz MB81C84A-35/-45 CMOS 256K-BIT HIGH SPEED SRAM 65,536 WORDS X 4 BITS HIGH SPEED STATIC RANDOM A CCESS MEMORY WITH AUTOMATIC POWER DOWN
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37H171
MB81C84A-35/-45
256K-BIT
MB81C84A
536-words
300mll
300mit
D24017S-3C
T-46-23-10
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q3236i
Abstract: tfk - 843 tfk 811 s TFK 834 S/BIP/SCB345100/B/30/10/ferrite ei core 33A
Text: Q3236 PHASE-LOCKED LOOP FREQUENCY SYNTHESIZER FEATURES • Reference Division Ratios of 1 to 16 in Direct • Backwards Compatible w ith the Q3036 and Parallel Mode, or 1 to 64 in Serial and 8 -bit Bus Mode Q3216 PLL Chips • Phase N oise Contributions as Low as
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Q3236
Q3036
Q3216
Q0420
q3236i
tfk - 843
tfk 811 s
TFK 834
S/BIP/SCB345100/B/30/10/ferrite ei core 33A
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2TT 4.00 MG
Abstract: MB81464-12 81464-12 MB81464 equivalent b1464 MB81464 DIP-18P-M03 HM50464 ZIP-20P-M01 UPD41254
Text: T-4 é>~2 ô - / 7 FUJITSU MICROELECTRONICS 47E D • 374=571=2 001*1311 7 BFNI FUJITSU October 1990 Edition 6.0 DATA SHEET MB81464-12/-15 MOS 262,144 B IT DYNAMIC RANDOM ACCESS M EM O R Y 65,536 x 4 Bits Dynamic Random Access Memory The Fujitsu MB81464 Is a fully decoded, dynamic random access memory
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MB81464-12-15
MB81464
18-pin
20-pin
Z20001S-4C
MB81464-12
MB81464-15
18-LEAD
2TT 4.00 MG
81464-12
MB81464 equivalent
b1464
DIP-18P-M03
HM50464
ZIP-20P-M01
UPD41254
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RY25
Abstract: 27C010-25 TMS27C010
Text: • 0^1725 0Q77531 2 ■ TMS27C010 1,048,576-BIT UV ERASABLE PROGRAMMABLE READ ONLY MEMORY TEXAS INSTR ASIC/MEMORY 2SE > Organization . . . 128K x 8 (TOP VIEW ) v p p C 1 U 32 ] v c c 31 ] P G M A16C 2 30 ] N C A15[ 3 29 ] A 1 4 A12[ 4 28 ] A 1 3 A7Ü 6
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0Q77531
TMS27C010
576-BIT
32-Pin
27C010-170
27C010-200
27C010-250
27C010-300
RY25
27C010-25
TMS27C010
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transistor SMD 41t
Abstract: smd transistor marking 9J qml-38535 4069UB smd transistor 9j transistor SMD 12E 4069UBN
Text: REVISIONS LTR DESCRIPTION APPROVED DATE YR-MO-DA REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PM IC N/A STANDARD M ICRO CIRCUIT DRAW ING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AM SC N/A 1 2 3
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5962-E11
17bsa
MIL-BUL-103.
MIL-BUL-103
T00470fl
0017b70
transistor SMD 41t
smd transistor marking 9J
qml-38535
4069UB
smd transistor 9j
transistor SMD 12E
4069UBN
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Untitled
Abstract: No abstract text available
Text: PD-9.998 International k? r Rectifier IRFP344 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 450 V R DS on = 0 -6 3 Q
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IRFP344
O-247
O-220
O-247
O-218
D-6380
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17bs
Abstract: No abstract text available
Text: 2 . 54±°-3 C±0.3 D±0.3 ED— EEtl LO CO CD LO 00 CD O O □ □ •Dimensions A A and B 2 . 54 5.08 7 . 62 10.16 12.7 15.24 17.78 20.32 22.86 25 . 4 27.94 30.48 33.02 35 . 56 38 . 1 40.64 43.18 OJ LO No. of contacts n — 4 6 8 10 12 14 16 18 20 22 24
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Ion66
UL94V-0
17bs
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2SC3050
Abstract: 2SC3178 2SC306 2SC3059 NPN Transistor VCEO 1000V 2SC3118 2SC3060 2SC3061 NPN transistor for switching applications, 400V fujitsu RET transistors
Text: F U J I TS U M I C R O E L E C T R O N I C S 31E D Bi 3 7 M ci7ti2 O ü l b S T O □ IHFfll c P r - 3 3 *-nr U l T T f T January 1990 Edition 1.1 rU JllbU "= " PRODUCT PROFILE ' 2SC3178, 2SC3059, 2SC3060, 2SC3061 Silicon High Speed Power Transistor_
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2SC3178,
2SC3059,
2SC3060,
2SC3061
2SC3050
2SC3178
2SC306
2SC3059
NPN Transistor VCEO 1000V
2SC3118
2SC3060
2SC3061
NPN transistor for switching applications, 400V
fujitsu RET transistors
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EZ-32
Abstract: No abstract text available
Text: JUJITSU MICROELECTRONICS 7 f l D E | 3 7 M T ? b E G003D00 T f ~ 3749762 FUJ [TSU MICROELECTRONICS J ß C Q3QOO D'P 3*/5' MB 8266A-10 MB 8266A-12 MB 8266A-15 FUJITSU 65,536-BIT DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB 8266A is a fully decoded, dynamic random access memory
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G003D00
536-BIT
266A-10
266A-15
18-pad
18C-F02)
EZ-32
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17bs3a
Abstract: HALF WAVE RECTIFIER Scans-0017311
Text: 17BH3A Half-W ave Vacuum Rectifier HOVAR TYPE For TV Damper S e r v ic e The i 7BH3A i s t h e same as t h e 6BH3A e x c e p t f o r t h e f o I l o w i n g i t e m s : H e ater C h a r a c t e r i s t i c s and R a t in g s C u r r e n t .
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17BH3A
17BS3A
17BS3A
17CK3
17CK3
HALF WAVE RECTIFIER
Scans-0017311
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