16N170 Search Results

16N170 Price and Stock

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IXYS Corporation IXGH16N170 IGBT NPT 1700V 32A TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH16N170	Tube	2,539		1	1 $10.62 10 $10.62 100 $6.727 1000 $10.62 10000 $10.62	Buy Now
Mouser Electronics	IXGH16N170		961			1 $10.62 10 $9.91 100 $6.73 1000 $5.97 10000 $5.97	Buy Now
Newark	IXGH16N170	Bulk	427		1	1 $9.85 10 $9.15 100 $7 1000 $6.2 10000 $6.2	Buy Now
TTI	IXGH16N170	Tube	300		30	1 - 10 - 100 $8.11 1000 $8.11 10000 $8.11	Buy Now
TME	IXGH16N170				1	1 $10.27 10 $8.49 100 $8.27 1000 $8.27 10000 $8.27	Get Quote
IXYS Corporation IXYH16N170C IGBT 1700V 40A TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXYH16N170C	Tube	1,153		1	1 $8.82 10 $8.82 100 $5.51533 1000 $4.71763 10000 $4.71763	Buy Now
Mouser Electronics	IXYH16N170C		298			1 $8.82 10 $8.59 100 $5.51 1000 $4.72 10000 $4.72	Buy Now
TTI	IXYH16N170C	Tube			300	1 - 10 - 100 - 1000 $4.79 10000 $4.79	Buy Now
TME	IXYH16N170C				1	1 $10.46 10 $8.31 100 $7.47 1000 $7.47 10000 $7.47	Get Quote
IXYS Corporation IXGT16N170A IGBT NPT 1700V 16A TO-268AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGT16N170A	Tube	856		1	1 $18.66 10 $18.66 100 $11.655 1000 $18.66 10000 $18.66	Buy Now
Mouser Electronics	IXGT16N170A		3,109			1 $18.07 10 $17.25 100 $11.65 1000 $10.35 10000 $10.35	Buy Now
TTI	IXGT16N170A	Tube	300		30	1 - 10 - 100 $14.34 1000 $14.34 10000 $14.34	Buy Now
TME	IXGT16N170A				1	1 $13.95 10 $11.08 100 $9.93 1000 $9.93 10000 $9.93	Get Quote
IXYS Corporation IXYH16N170CV1 IGBT 1700V 40A TO-247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXYH16N170CV1	Tube	294		1	1 $10.94 10 $10.94 100 $6.94833 1000 $10.94 10000 $10.94	Buy Now
Mouser Electronics	IXYH16N170CV1					1 - 10 - 100 - 1000 $6.19 10000 $6.19	Get Quote
TTI	IXYH16N170CV1	Tube			300	1 - 10 - 100 - 1000 $6.05 10000 $6.05	Buy Now
TME	IXYH16N170CV1				1	1 $13.85 10 $10.88 100 $9.81 1000 $9.81 10000 $9.81	Get Quote
IXYS Corporation IXBH16N170 IGBT 1700V 40A TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXBH16N170	Tube	174		1	1 $13.16 10 $13.16 100 $8.473 1000 $13.16 10000 $13.16	Buy Now
Mouser Electronics	IXBH16N170		843			1 $13.16 10 $11.69 100 $8.47 1000 $7.81 10000 $7.81	Buy Now
TTI	IXBH16N170	Tube			300	1 - 10 - 100 - 1000 $9.54 10000 $9.54	Buy Now
TME	IXBH16N170				1	1 $13.54 10 $10.67 100 $10.18 1000 $10.18 10000 $10.18	Get Quote
New Advantage Corporation	IXBH16N170		62		1	1 - 10 - 100 $20.47 1000 $20.47 10000 $20.47	Buy Now

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16N170 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
752 J 1600 V CAPACITOR Abstract: 16N170 BiMOSFET Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	16N170 O-268 O-247 752 J 1600 V CAPACITOR 16N170 BiMOSFET	PDF
Untitled Abstract: No abstract text available Text: IXGH 16N170 IXGT 16N170 High Voltage IGBT VCES IC25 VCE sat = 1700 = 32 = 3.5 V A V TO-268 (D3-Pak) (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient	Original	16N170 O-268 O-247	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Data High Voltage IGBT IXGH 16N170A VCES IXGT 16N170A IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30	Original	16N170A 728B1	PDF
smd diode 819 Abstract: 16N170A mos 1200v to-247 Text: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20	Original	16N170A 728B1 123B1 728B1 065B1 smd diode 819 16N170A mos 1200v to-247	PDF
16N170A Abstract: TO-247 weight IXGH16N170A Text: Advance Technical Data High Voltage IGBT IXGH 16N170A VCES IXGT 16N170A IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30	Original	16N170A 728B1 TO-247 weight IXGH16N170A	PDF
ixys ixgh 16n170 Abstract: S60A 16N170 DS98996 Text: Advance Technical Data High Voltage IGBT IXGH 16N170 VCES IXGT 16N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	16N170 O-247 O-268 728B1 ixys ixgh 16n170 S60A DS98996	PDF
16N170AH1 Abstract: 16N170A robot control 16N170 Text: Advance Technical Data High Voltage IGBT IXGH/IXGT 16N170A VCES IXGH/IXGT 16N170AH1 IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 40 ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700	Original	16N170A 16N170AH1 O-247 405B2 16N170A robot control 16N170	PDF
16N170AH1 Abstract: 16N170A IXGT16N170A IXGH16N170AH1 Text: High Voltage IGBT IXGH 16N170A IXGT 16N170A IXGH 16N170AH1 IXGT 16N170AH1 VCES IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	16N170A 16N170AH1 16N170AH1 16N170A IXGT16N170A IXGH16N170AH1	PDF
16n170 Abstract: No abstract text available Text: Advance Technical Data High Voltage IGBT IXGH 16N170 VCES IXGT 16N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	16N170 O-247 O-268 728B1 123B1 728B1 065B1 16N170	PDF
16N170A Abstract: diode 22 161 smd Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	16N170A 16N170A diode 22 161 smd	PDF
ixys ixgh 16n170 Abstract: 16N170 IXGH 16N170 PF752 Text: IXGH 16N170 IXGT 16N170 High Voltage IGBT VCES IC25 VCE sat = 1700 = 32 = 3.5 V A V TO-268 (D3-Pak) (IXGT) Symbol Test Conditions VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	16N170 O-268 O-247 ixys ixgh 16n170 16N170 IXGH 16N170 PF752	PDF
752 C 1600 V CAPACITOR Abstract: 16N170 Text: High Voltage IGBT IXGH 16N170 VCES IXGT 16N170 IC25 VCE sat Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	16N170 O-268 O-247 752 C 1600 V CAPACITOR	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1700 V VGES Continuous	Original	16N170A 16N170A O-268 O-247	PDF
A1540 Abstract: rg 710 diode 16N170A ISOPLUS247 16N170AH1 IXGR16N170AH1 Text: Advance Technical Data IXGR 16N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	16N170AH1 ISOPLUS247 E153432 minute00 405B2 A1540 rg 710 diode 16N170A ISOPLUS247 16N170AH1 IXGR16N170AH1	PDF

ad 161 transistor Abstract: No abstract text available Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	16N170 16N170 O-268 O-247 ad 161 transistor	PDF
Untitled Abstract: No abstract text available Text: High Voltage IGBT IXGH 16N170A IXGT 16N170A IXGH 16N170AH1 IXGT 16N170AH1 VCES IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	16N170A 16N170AH1 W1700	PDF
16N170 Abstract: No abstract text available Text: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	16N170A 16N170A O-268 O-247 16N170	PDF
Untitled Abstract: No abstract text available Text: High Voltage IGBT w/ Sonic Diode 16N170A 16N170A 16N170AH1 16N170AH1 VCES IC90 VCE sat tfi(typ) = = £ = 1700V 11A 5.0V 70ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M	Original	IXGT16N170A IXGH16N170A IXGT16N170AH1 IXGH16N170AH1 338B2	PDF
IXGH16N170A Abstract: IXGT16N170A Text: 16N170A 16N170A 16N170AH1 16N170AH1 High Voltage IGBT w/ Sonic Diode VCES IC90 VCE sat tfi(typ) = = £ = 1700V 11A 5.0V 35ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M	Original	IXGT16N170A IXGH16N170A IXGT16N170AH1 IXGH16N170AH1 16N170A DH10A-1800PA IXGH16N170A IXGT16N170A	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
40N160 Abstract: 16N170 Text: BIMOSFET TM B-Series Contents VCES max. TO-247 TO-268 TO-268 long leg ISOPLUS i4-PACTM Page IXBF 9N140 C4-2 V IC25 TVJ = 25 °C A Vce(sat) TVJ = 25 °C V 1400 7 4.9 9 4.9 IXBH 9N140 C4-6 15 5.8 IXBH 15N140 C4-10 20 4.7 IXBH 20N140 C4-14 28 6.2 33 6.2 33	Original	16N170A 16N170 42N170 40N160 9N160 15N140	PDF
50N60 Abstract: 50N100 50n80 40N160 9N160G 50N6 Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C	OCR Scan	9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6	PDF

16N170 Search Results

16N170 Price and Stock

IXYS Corporation IXGH16N170

IXYS Corporation IXYH16N170C

IXYS Corporation IXGT16N170A

IXYS Corporation IXYH16N170CV1

IXYS Corporation IXBH16N170

16N170 Datasheets Context Search

752 J 1600 V CAPACITOR

Untitled

Untitled

smd diode 819

16N170A

ixys ixgh 16n170

16N170AH1

16N170AH1

16n170

16N170A

ixys ixgh 16n170

752 C 1600 V CAPACITOR

Untitled

A1540

ad 161 transistor

Untitled

16N170

Untitled

IXGH16N170A

7N60B equivalent

40N160

50N60