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    16MX64 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M368L1624DTL

    Abstract: No abstract text available
    Text: M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.1 May. 2002 Rev. 0.1 May. 2002 M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE Revision History


    Original     		PDF M368L1624DTL 184pin 128MB 16Mx64 16Mx16 64-bit M368L1624DTL

    K4S561632C

    Abstract: M464S1654CTS
    Text: M464S1654CTS PC133/PC100 SODIMM M464S1654CTS SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S1654CTS is a 16M bit x 64 Synchro- • Performance range nous Dynamic RAM high density memory module. The Samsung M464S1654CTS consists of four CMOS 16M x 16 bit with


    Original     		PDF M464S1654CTS PC133/PC100 M464S1654CTS 16Mx64 16Mx16, 144-pin 100MHz K4S561632C

    Untitled

    Abstract: No abstract text available
    Text: M470L1624DT0 200pin DDR SDRAM SODIMM 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM 200pin SODIMM 64-bit Non-ECC/Parity Revision 0.1 Jan. 2002 Rev. 0.1 Jan. 2002 M470L1624DT0 200pin DDR SDRAM SODIMM Revision History Revision 0.0 (Dec. 2001) 1. First release.


    Original     		PDF M470L1624DT0 200pin 128MB 16Mx64 16Mx16 64-bit

    VG36648041DT

    Abstract: VS1664648041D VS864648041D
    Text: VS864648041D,VS1664648041D 8M,16MX64-Bit SDRAM Module VIS Description The VS864648041D and VS1664648041D are 8M x 64 bit and 16M bit x 64 Dual-In-Line synchronous DRAM Module DIMM . It consists of 8/16 CMOS 8Mx8 bit synchronous DRAMs (VG36648041DT) with 4


    Original     		PDF VS864648041D VS1664648041D 16MX64-Bit VS1664648041D VG36648041DT) VS864648041D, PC100/JEDEC PC133 VG36648041DT

    DTM60149

    Abstract: DTM60151 DTM60153 DTM60155 16Mx64 60153
    Text: DTM60149, 60151, 60153, 60155 128MB-16M x 64/72, 168-Pin Unbuffered SDRAM DIMMS Identification DTM60149:16Mx64 DTM60151:16Mx64 DTM60153:16Mx72 DTM60155:16Mx72 PC100 PC133 PC100 PC133 Performance range PC100=100MHz 10ns@CL=2 PC133=133MHz(7.5ns@CL=3) Features


    Original     		PDF DTM60149, 128MB-16M 168-Pin DTM60149 16Mx64 DTM60151 DTM60153 16Mx72 DTM60155 16Mx64 60153

    DDR200

    Abstract: DDR266B HYMD116M6456-H HYMD116M6456-L
    Text: HYMD116M6456-H/L 16Mx64 Unbuffered DDR SO-DIMM PRELIMINARY DESCRIPTION Hynix HYMD116M6456-H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual InLine Memory Modules SO-DIMMs which are organized as 16Mx64 high-speed memory arrays. Hynix


    Original     		PDF HYMD116M6456-H/L 16Mx64 HYMD116M6456-H/L 200-pin 8Mx16 400mil 200pin DDR200 DDR266B HYMD116M6456-H HYMD116M6456-L

    M368L3313CT1-CB0

    Abstract: M368L3313CT1 M368L3313CT1-CA0 M368L3313CT1-CA2
    Text: M368L3313CT1 184pin Unbuffered DDR SDRAM MODULE 256MB DDR SDRAM MODULE 32Mx64(16Mx64*2 bank based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.1 June. 2001 Rev. 0.1 June.2001 M368L3313CT1 184pin Unbuffered DDR SDRAM MODULE


    Original     		PDF M368L3313CT1 184pin 256MB 32Mx64 16Mx64 16Mx8 64-bit M368L3313CT1-CB0 M368L3313CT1 M368L3313CT1-CA0 M368L3313CT1-CA2

    M368L1624BT1

    Abstract: PC200
    Text: M368L1624BT1 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.9 June. 2001 Rev. 0.9 June. 2001 184pin Unbuffered DDR SDRAM MODULE M368L1624BT1 Revision History


    Original     		PDF M368L1624BT1 184pin 128MB 16Mx64 16Mx16 64-bit 133Mhz) M368L1624BT1 PC200

    nanya

    Abstract: NT128S64VH4A0GM NT128S64VH4A0GM-75B NT128S64VH4A0GM-7K NT128S64VH4A0GM-8B
    Text: NT128S64VH4A0GM 128MB : 16M x 64 SDRAM SODIMM 16Mx64 bit One Bank Small Outline SDRAM Module based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Features l l 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Programmable Operation:


    Original     		PDF NT128S64VH4A0GM 128MB 16Mx64 16Mx16, 13/9/2TECHNOLOGY 010Max nanya NT128S64VH4A0GM NT128S64VH4A0GM-75B NT128S64VH4A0GM-7K NT128S64VH4A0GM-8B

    Untitled

    Abstract: No abstract text available
    Text: W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS  DDR Data Rate = 200, 250, 266Mbps  50% SPACE SAVINGS  Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm  Reduced part count  2.5V ±0.2V core power supply  Reduced I/O count


    Original     		PDF W3E16M64S-XBX 16Mx64 266Mbps

    M368L1713CT1

    Abstract: No abstract text available
    Text: M368L1713CT1 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx8 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.0 Mar. 2001 Rev. 0.0 Mar. 2001 M368L1713CT1 184pin Unbuffered DDR SDRAM MODULE Revision History


    Original     		PDF M368L1713CT1 184pin 128MB 16Mx64 16Mx8 64-bit M368L1713CT1

    HYM72V16M636AT6

    Abstract: RA12
    Text: 16Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M636AT6 Series DESCRIPTION The Hyundai HYM72V16M636AT6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin


    Original     		PDF 16Mx64 PC133 16Mx16 HYM72V16M636AT6 16Mx64bits 16Mx16bits 400mil 54pin 168pin RA12

    HYM71V16655AT8-8

    Abstract: HYM71V16655ALT8-8 HYM71V16655ALT8-P HYM71V16655ALT8-S HYM71V16655AT8 HYM71V16655AT8-P HYM71V16655AT8-S
    Text: 16Mx64bits PC100 SDRAM Unbuffered DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16655AT8 Series DESCRIPTION The Hynix HYM71V16655AT8 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    Original     		PDF 16Mx64bits PC100 16Mx8 HYM71V16655AT8 16Mx64bits 16Mx8bits 400mil 54pin 168pin HYM71V16655AT8-8 HYM71V16655ALT8-8 HYM71V16655ALT8-P HYM71V16655ALT8-S HYM71V16655AT8-P HYM71V16655AT8-S

    HYM71V16635AT8M

    Abstract: HYM71V16635AT8M-H HYM71V16635AT8M-K HYM71V16635ALT8M-H HYM71V16635ALT8M-K
    Text: 16Mx64bits PC133 SDRAM Unbuffered DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16635AT8M Series DESCRIPTION The Hynix HYM71V16635AT8M Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    Original     		PDF 16Mx64bits PC133 16Mx8 HYM71V16635AT8M 16Mx64bits 16Mx8bits 400mil 54pin 168pin HYM71V16635AT8M-H HYM71V16635AT8M-K HYM71V16635ALT8M-H HYM71V16635ALT8M-K

    Untitled

    Abstract: No abstract text available
    Text: M366S1623ETS PC133/PC100 Unbuffered DIMM M366S1623ETS SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S1623ETS is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M366S1623ETS PC133/PC100 M366S1623ETS 16Mx64 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: 16Mx64 bits Unbuffered DDR SDRAM DIMM HYMD216646A L 6J-J DESCRIPTION Hynix HYMD216646A(L)6J-J series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Lin Memory Modules (DIMMs) which are organized as 16Mx64 high-speed memory arrays. Hynix HYMD216646A(L)6J-J series


    Original     		PDF 16Mx64 HYMD216646A 184-pin 16Mx16 400mil 184pin HMD216646A

    Untitled

    Abstract: No abstract text available
    Text: M368L1713DTL 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx8 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.2 May. 2002 Rev. 0.2 May. 2002 M368L1713DTL 184pin Unbuffered DDR SDRAM MODULE Revision History


    Original     		PDF M368L1713DTL 184pin 128MB 16Mx64 16Mx8 64-bit PC1600

    Untitled

    Abstract: No abstract text available
    Text: 16Mx64 bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M656B L T6 Series DESCRIPTION The HYM72V16M656B(L)T6 -Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four 16Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 144-pin Zig Zag Dual pin glass-epoxy


    Original     		PDF 16Mx64 PC100 16Mx16 HYM72V16M656B 54-pin 144-pin

    Untitled

    Abstract: No abstract text available
    Text: M368L1624BTL 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.2 May. 2002 Rev. 0.2 May. 2002 184pin Unbuffered DDR SDRAM MODULE M368L1624BTL Revision History


    Original     		PDF M368L1624BTL 184pin 128MB 16Mx64 16Mx16 64-bit DDR266A

    Untitled

    Abstract: No abstract text available
    Text: IBM11N16735B IBM11N16645B IBM11N16735C IBM11N16645C 16M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 16Mx64.16Mx72 Extended Data Out Page Mode DÎMMs • Performance: -60 Wc [RAS Access Time tCAC


    OCR Scan     		PDF IBM11N16735B IBM11N16645B IBM11N16735C IBM11N16645C 16Mx64 16Mx72 104ns 75H1640 SA14-4626-02 DD05225

    Untitled

    Abstract: No abstract text available
    Text: cP IITSU May 1998 Revision 1.0 data sheet PDC16UV6484C- 102/103 T-S 128MByte (16Mx64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC16UV6484C-(102/103)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 16M


    OCR Scan     		PDF PDC16UV6484C- 128MByte 16Mx64) PC/100 64-megabyte 168-pin, F64842C- 100Mhz,

    A49AN

    Abstract: adq38 360ac In400I
    Text: I =¥= =• = IBM13N16644HC IBM13N16734HC Preliminary 16M x 64/72 2 Bank Unbuffered SDRAM Module Features • 168-Pin Unbuffered 8-Byte Dual In-Line Memory Module • 16Mx64/72 Synchronous DRAM DIMM • Three speed sorts: • -260 and -360 for PC100 applications


    OCR Scan     		PDF 168-Pin 16Mx64/72 PC100 66MHz IBM13N16644HC IBM13N16734HC A49AN adq38 360ac In400I

    Untitled

    Abstract: No abstract text available
    Text: cP IITSU January 1998 Revision 1.0 data sheet PDC16UV6484A- 103/10 T-S 128MByte (16Mx64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC16UV6484A-(103/10)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 16M


    OCR Scan     		PDF PDC16UV6484A-( 128MByte 16Mx64) PC/100 PDC16UV6484A- 64-megabyte 168-pin, F64842B- 128MByte 1144-pin

    Untitled

    Abstract: No abstract text available
    Text: cP IITSU March 1998 Revision 2.0 data sheet PDC16UV6484B- 103/10 T-S 128MByte (16Mx64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC16UV6484B-(103/10)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 16M


    OCR Scan     		PDF PDC16UV6484B-( 128MByte 16Mx64) PC/100 PDC16UV6484B- 64-megabyte 168-pin, MB81F64842B- 128MByte 100Mhz