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    MT48v32m16

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 256Mb and 512Mb: x16 TwinDie MOBILE SDRAM SYNCHRONOUS DRAM MT48LC32M16S2 MT48LC16M16T2 MT48LC16M16B2 Features • • • • • • • • • • • • • MT48V16M16B2 MT48H32M16S2 MT48H16M16T2 MT48H16M16B2 1 2 3 A VSS DQ15 B DQ14 C 4


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    256Mb 512Mb: 192-cycle MT48LC32M16S2 MT48LC16M16T2 MT48LC16M16B2 MT48V32M16S2 MT48H32M16S2 MT48V16M16T2 MT48H1a MT48v32m16 PDF

    MT48LC32M16S2

    Abstract: MT48v32m16
    Text: PRELIMINARY‡ 256Mb and 512Mb: x16 TwinDie SDRAM SYNCHRONOUS DRAM MT48LC32M16S2 – 8 MEG X 16 X 4 BANKS MT48LC16M16T2 – 4 MEG X 16 X 4 BANKS MT48LC16M16B2 – 4 MEG X 16 X 4 BANKS MT48V32M16S2 – 8 MEG X 16 X 4 BANKS MT48V16M16T2 – 4 MEG X 16 X 4 BANKS


    Original
    256Mb 512Mb: 192-cycle MT48LC32M16S2 MT48LC16M16T2 MT48LC16M16B2 09005aef80906b6e 512mbSDRAM MT48LC32M16S2 MT48v32m16 PDF

    MT48LC16M16A2TG8E

    Abstract: MT48LC16M16A2 MT48LC32M8A2 MT48LC64M4A2 PC133 registered reference design MT48LC16M16A2TG-8E
    Text: ADVANCE SYNCHRONOUS DRAM MT48LC64M4A2 - 16 Meg x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www. m icro n. co m/m ti/msolh tm i/da tash e e th tmi FEATURES


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    MT48LC64M4A2 MT48LC32M8A2 MT48LC16M16A2 PC66-, PC100- PC133-compliant 192-cycle 256Mb: 256MSDRAM MT48LC16M16A2TG8E PC133 registered reference design MT48LC16M16A2TG-8E PDF

    dram zip 256kx16

    Abstract: No abstract text available
    Text: INDEX GENERAL PRO D U CT INFORM ATION Dense-Pac Memory Module and Monolithic . 4 Emerging Technology / P r o d u c t s . 5


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    DPS1MS16P/XP 150ns, DPS512S8H4 DPS512S8P/Pt/PLL DPS512S8Ü DPS256X24P DPS256S32W DPS256X32L/W 512Kx16, 256Kx32 dram zip 256kx16 PDF

    DQ131

    Abstract: MT48LC16M16A2TG8E
    Text: ADVANCE M IC R O N * I 2 56 M b : xV TCCHW LOOY.INC. SYNCHRONOUS DRAM nV ,1,5 SD R A M MT48LC64M4A2 - 16 Meg x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks For the latest data sh ee t revisions, p le a s e refer to the Micron


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    192-cycle MT48LC64M4A2 MT48LC32M8A2 54-PIN 256Mb 256MSDRAM DQ131 MT48LC16M16A2TG8E PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE im ir—p n i v i I " “ T m t 4LCi 6M4A7/t s 1 6 MEGX4 DRAM 16 MEG x 4 DRAM DRAM 3.3V FAST PAGE MODE FEATURES • Single +3.3V ±0.3V pow er supply • Industry-standard x4 pinout, timing, functions and packages • 13 row-addresses, 11 colum n-addresses A7 or


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    096-cycle MT4LC16M4A7DW-7 MT4LC16M4A7/T8 16MEGx4DETAWÂ MT4LC16M4A7ST8 0G11241 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MICRON' I 256M b:X\ * 8 , X 1 6 TCCHWLOOY.INC. S D R A I V I MT48LC64M4A2 - 1 6 M e g x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest data sheet revisions, please refer to the Micron


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    MT48LC64M4A2 MT48LC32M8A2 MT48LC16M16A2 PCI00-compliant; 54-PIN 256Mb: 256MSDRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M I^ P n M 8 I 256Mb: x4, x8, x16 DDR SDRAM MT46V64M4 - 16 Meg x 4 x 4 banks MT46V32M8 - 8 Meg x 8 x 4 banks MT46V16M16- 4 Meg x 16 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html


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    256Mb: MT46V64M4 MT46V32M8 MT46V16M16- 66-PIN PDF

    ed16m

    Abstract: iRAM
    Text: D E N S E -P A C 128 Megabyte DRAM SODIMM M I C R O S Y S T E M S DP3ED16MX64RSW5 PRELIMINARY DESCRIPTION: PIN-OUT The DP3 ED16MX64RSW5 is the 16 Meg x 64, 3.3 Volt, EDO Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module


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    DP3ED16MX64RSW5 ED16MX64RSW5 16Megx 44-pin DP3ED16MX64RSW5 50ri5 ed16m iRAM PDF