MT48v32m16
Abstract: No abstract text available
Text: PRELIMINARY‡ 256Mb and 512Mb: x16 TwinDie MOBILE SDRAM SYNCHRONOUS DRAM MT48LC32M16S2 MT48LC16M16T2 MT48LC16M16B2 Features • • • • • • • • • • • • • MT48V16M16B2 MT48H32M16S2 MT48H16M16T2 MT48H16M16B2 1 2 3 A VSS DQ15 B DQ14 C 4
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256Mb
512Mb:
192-cycle
MT48LC32M16S2
MT48LC16M16T2
MT48LC16M16B2
MT48V32M16S2
MT48H32M16S2
MT48V16M16T2
MT48H1a
MT48v32m16
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MT48LC32M16S2
Abstract: MT48v32m16
Text: PRELIMINARY‡ 256Mb and 512Mb: x16 TwinDie SDRAM SYNCHRONOUS DRAM MT48LC32M16S2 – 8 MEG X 16 X 4 BANKS MT48LC16M16T2 – 4 MEG X 16 X 4 BANKS MT48LC16M16B2 – 4 MEG X 16 X 4 BANKS MT48V32M16S2 – 8 MEG X 16 X 4 BANKS MT48V16M16T2 – 4 MEG X 16 X 4 BANKS
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256Mb
512Mb:
192-cycle
MT48LC32M16S2
MT48LC16M16T2
MT48LC16M16B2
09005aef80906b6e
512mbSDRAM
MT48LC32M16S2
MT48v32m16
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MT48LC16M16A2TG8E
Abstract: MT48LC16M16A2 MT48LC32M8A2 MT48LC64M4A2 PC133 registered reference design MT48LC16M16A2TG-8E
Text: ADVANCE SYNCHRONOUS DRAM MT48LC64M4A2 - 16 Meg x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www. m icro n. co m/m ti/msolh tm i/da tash e e th tmi FEATURES
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MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
PC66-,
PC100-
PC133-compliant
192-cycle
256Mb:
256MSDRAM
MT48LC16M16A2TG8E
PC133 registered reference design
MT48LC16M16A2TG-8E
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dram zip 256kx16
Abstract: No abstract text available
Text: INDEX GENERAL PRO D U CT INFORM ATION Dense-Pac Memory Module and Monolithic . 4 Emerging Technology / P r o d u c t s . 5
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DPS1MS16P/XP
150ns,
DPS512S8H4
DPS512S8P/Pt/PLL
DPS512S8Ü
DPS256X24P
DPS256S32W
DPS256X32L/W
512Kx16,
256Kx32
dram zip 256kx16
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DQ131
Abstract: MT48LC16M16A2TG8E
Text: ADVANCE M IC R O N * I 2 56 M b : xV TCCHW LOOY.INC. SYNCHRONOUS DRAM nV ,1,5 SD R A M MT48LC64M4A2 - 16 Meg x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks For the latest data sh ee t revisions, p le a s e refer to the Micron
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192-cycle
MT48LC64M4A2
MT48LC32M8A2
54-PIN
256Mb
256MSDRAM
DQ131
MT48LC16M16A2TG8E
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Untitled
Abstract: No abstract text available
Text: ADVANCE im ir—p n i v i I " “ T m t 4LCi 6M4A7/t s 1 6 MEGX4 DRAM 16 MEG x 4 DRAM DRAM 3.3V FAST PAGE MODE FEATURES • Single +3.3V ±0.3V pow er supply • Industry-standard x4 pinout, timing, functions and packages • 13 row-addresses, 11 colum n-addresses A7 or
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096-cycle
MT4LC16M4A7DW-7
MT4LC16M4A7/T8
16MEGx4DETAWÂ
MT4LC16M4A7ST8
0G11241
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Untitled
Abstract: No abstract text available
Text: ADVANCE MICRON' I 256M b:X\ * 8 , X 1 6 TCCHWLOOY.INC. S D R A I V I MT48LC64M4A2 - 1 6 M e g x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest data sheet revisions, please refer to the Micron
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MT48LC64M4A2
MT48LC32M8A2
MT48LC16M16A2
PCI00-compliant;
54-PIN
256Mb:
256MSDRAM
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Untitled
Abstract: No abstract text available
Text: ADVANCE M I^ P n M 8 I 256Mb: x4, x8, x16 DDR SDRAM MT46V64M4 - 16 Meg x 4 x 4 banks MT46V32M8 - 8 Meg x 8 x 4 banks MT46V16M16- 4 Meg x 16 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html
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256Mb:
MT46V64M4
MT46V32M8
MT46V16M16-
66-PIN
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ed16m
Abstract: iRAM
Text: D E N S E -P A C 128 Megabyte DRAM SODIMM M I C R O S Y S T E M S DP3ED16MX64RSW5 PRELIMINARY DESCRIPTION: PIN-OUT The DP3 ED16MX64RSW5 is the 16 Meg x 64, 3.3 Volt, EDO Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module
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DP3ED16MX64RSW5
ED16MX64RSW5
16Megx
44-pin
DP3ED16MX64RSW5
50ri5
ed16m
iRAM
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