PSEUDO SRAM
Abstract: SRAM HIO15
Text: 16Mb Pseudo SRAM IS66WV1M16DBLL ► Applications ISSI is now sampling a 16Mb Pseudo SRAM, the latest addition to our SRAM portfolio. 16Mb Pseudo SRAM provides a cost effective solution to a standard SRAM socket. The pinout of the 16Mb PSRAM is identical to the regular 16Mb LP SRAM,
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IS66WV1M16DBLL
1Mx16)
48-ball
130mA
I/O10
I/O11
PSEUDO SRAM
SRAM
HIO15
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Untitled
Abstract: No abstract text available
Text: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect FEATURES
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165Vor
100-pin
165-pin
Apr/13/00
Apr/6/00
Jan/18/00
MT58L1MY18D,
Nov/11/99
MT58L1MY18D
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SST32HF162
Abstract: SST32HF164 SST32HF802
Text: Multi-Purpose Flash MPF + SRAM ComboMemory SST32HF802 / SST32HF162 / SST32HF164 SST32HF802 / 162 / 1648Mb Flash + 2Mb SRAM, 16Mb Flash + 2Mb SRAM, 16Mb Flash + 4Mb SRAM (x16) MCP ComboMemories Data Sheet FEATURES: • MPF + SRAM ComboMemory – SST32HF802: 512K x16 Flash + 128K x16 SRAM
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SST32HF802
SST32HF162
SST32HF164
1648Mb
SST32HF802:
SST32HF162:
SST32HF164:
48-lbga-LBK-10x12-500mic-1
MO-210,
SST32HF164
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Untitled
Abstract: No abstract text available
Text: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES
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100-pin
165-p.
Apr/13/00
Apr/6/00
Jan/18/00
MT58L1MY18P,
Nov/11/99
MT58L1MY18P
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SRAM 256KB 6ns
Abstract: DRAMs edo dram 50ns 72-pin simm 2mb 72-pin simm ibm comp 128m simm 72 pin 64mb edo dram simm 64mb 72-pin simm
Text: D RAM Numbe ring Numbering Page 1 Contents IBM bb cc dd e f gg h - jj cc Index bb Product Family Density 01 03 DRAM SDRAM 4 5 16 17 18 64 65 66 4Mb, Normal Addressing 10/10, 10/9, 9/9 4Mb, Alternate Addressing (10/8) 16Mb, 4K Refresh 16Mb, 2K Refresh 16Mb, 1K Refresh
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SST32HF32A2
Abstract: SST32HF64A2 SST32HF64B2 235AH
Text: Multi-Purpose Flash Plus + PSRAM ComboMemory SST32HF32A2 / SST32HF64A2 / SST32HF64B2 SST32HF32A / 64A2/64B232Mb Flash + 16Mb SRAM, 64Mb Flash + 16Mb/32Mb SRAM x16 MCP ComboMemories Preliminary Specifications FEATURES: • ComboMemories organized as: – SST32HF32A2: 2M x16 Flash + 1024K x16 PSRAM
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SST32HF32A2
SST32HF64A2
SST32HF64B2
SST32HF32A
64A2/64B232Mb
16Mb/32Mb
SST32HF32A2:
1024K
SST32HF64A2:
SST32HF64B2
235AH
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Untitled
Abstract: No abstract text available
Text: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, SCD SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18P, MT58V1MV18P, MT58L512Y32P, MT58V512V32P, MT58L512Y36P, MT58V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES
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100-pin
165-p.
Apr/13/00
Apr/6/00
Jan/18/00
MT58L1MY18P,
Nov/11/99
MT58L1MY18P
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DS1270W
Abstract: No abstract text available
Text: Rev 0; 8/06 3.3V Single-Piece 16Mb Nonvolatile SRAM Features The DS2070W is a 16Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in
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DS2070W
256-ball
microA19
DS2070W
DS1270W
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GW 9n
Abstract: MT58L512Y36D MT58V1MV18D MT58V512V32D MT58V512V36D 100-PIN MS-026 MT58L1MY18D MT58L512Y32D
Text: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED, DCD SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18D, MT58V1MV18D, MT58L512Y32D, MT58V512V32D, MT58L512Y36D, MT58V512V36D 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Pipelined, Double-Cycle Deselect FEATURES
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MT58L1MY18D,
MT58V1MV18D,
MT58L512Y32D,
MT58V512V32D,
MT58L512Y36D,
MT58V512V36D
100-Pin
165Vor
Apr/6/00
Jan/18/00
GW 9n
MT58L512Y36D
MT58V1MV18D
MT58V512V32D
MT58V512V36D
MS-026
MT58L1MY18D
MT58L512Y32D
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64MB SRAM
Abstract: MO-47
Text: iPEM 16 MB ASYNC SRAM AS8S512K32PEC THIS PRODUCT IS SUBJECT TO MICROSS PCN-1109 AND REPLACED BY AS8S512K32PECA. 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit DESCRIPTION FEATURES The AS8S512K32 is a high speed, 5V, 16Mb SRAM. The
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AS8S512K32PEC
PCN-1109
AS8S512K32PECA.
512Kx32
M0-47AE
AS8S512K32
AS8S512K32PECA
AS8S512K32PEC
64MB SRAM
MO-47
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AS8S512K32
Abstract: AS8S512K32PEC AS8SLC2M32PEC AS8SLC512K32 16MB SRAM MO-47
Text: i PEM 16 MB ASYNC SRAM Austin Semiconductor, Inc. AS8S512K32PEC 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION The AS8S512K32 is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 20 and
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AS8S512K32PEC
512Kx32
M0-47AE
AS8S512K32
MO-47AE]
AS8S512K32PEC
AS8SLC2M32PEC
AS8SLC512K32
16MB SRAM
MO-47
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AS8S512K32
Abstract: AS8S512K32PEC AS8SLC2M32PEC
Text: i PEM 16 MB ASYNC SRAM Austin Semiconductor, Inc. AS8S512K32PEC 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION The AS8S512K32 is a high speed, 5V, 16Mb SRAM. The device is available with access times of 12, 15, 20 and
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AS8S512K32PEC
512Kx32
M0-47AE
AS8S512K32
MO-47AE]
AS8S512K32PEC
AS8SLC2M32PEC
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DS1270W
Abstract: DS2070W-100 DS2070W
Text: Rev 0; 8/06 3.3V Single-Piece 16Mb Nonvolatile SRAM Features The DS2070W is a 16Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in
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DS2070W
256-ball
DS2070W
DS1270W
DS2070W-100
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AS8SLC512K32
Abstract: No abstract text available
Text: i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION The AS8SLC512K32 is a high speed, 3.3V, 16Mb SRAM. The device is available with access times of 12, 15, 20
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AS8SLC512K32PEC
512Kx32
AS8SLC512K32
AS8SLC512K32PEC
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Untitled
Abstract: No abstract text available
Text: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 16Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES 100-Pin TQFP1 • High frequency and 100 percent bus utilization
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MT55L1MY18P,
MT55V1MV18P,
MT55L512Y32P,
MT55V512V32P,
MT55L512Y36P,
MT55V512V36P
100-Pin
Apr/6/00
Jan/18/00
119-pin
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MT55V512Y36F
Abstract: No abstract text available
Text: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 16Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55V512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • •
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MT55L1MY18F
MT55V512Y36F
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Untitled
Abstract: No abstract text available
Text: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 16Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES 100-Pin TQFP1 • High frequency and 100 percent bus utilization
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Apr/13/00
Apr/6/00
Jan/18/00
119-pin
MT55L1MY18P,
Nov/11/99
MT55L1M18P
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Untitled
Abstract: No abstract text available
Text: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 16Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55V512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • •
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Apr/13/00
Apr/6/00
Jan/18/00
119-pin
MT55L1MY18F,
Nov/11/99
MT55L1MY18F
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Untitled
Abstract: No abstract text available
Text: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18F, MT58V1MV18F, MT58L512Y32F, MT58V512V32F, MT58L512Y36F, MT58V512V36F 3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Flow-Through FEATURES 100-Pin TQFP1 • Fast clock and OE# access times
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100-pin
165-pin
Apr/13/00
Apr/6/00
Jan/18/00
MT58L1MY18F,
Nov/11/99
MT58L1MY18F
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for 3g 4e
Abstract: No abstract text available
Text: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH ZBT SRAM 16Mb ZBT SRAM MT55L1MY18F, MT55V1MV18F, MT55L512Y32F, MT55V512V32F, MT55V512Y36F, MT55V512V36F 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • •
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Apr/13/00
Apr/6/00
Jan/18/00
119-pin
MT55L1MY18F,
Nov/11/99
MT55L1MY18F
for 3g 4e
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Untitled
Abstract: No abstract text available
Text: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 FLOW-THROUGH SYNCBURST SRAM 16Mb SYNCBURST SRAM MT58L1MY18F, MT58V1MV18F, MT58L512Y32F, MT58V512V32F, MT58L512Y36F, MT58V512V36F 3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O, Flow-Through FEATURES 100-Pin TQFP1 • Fast clock and OE# access times
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100-pin
165-pin
Apr/13/00
Apr/6/00
Jan/18/00
MT58L1MY18F,
Nov/11/99
MT58L1MY18F
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Untitled
Abstract: No abstract text available
Text: ADVANCE 16Mb: 1 MEG x 18, 512K x 32/36 PIPELINED ZBT SRAM 16Mb ZBT SRAM MT55L1MY18P, MT55V1MV18P, MT55L512Y32P, MT55V512V32P, MT55L512Y36P, MT55V512V36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES 100-Pin TQFP1 • High frequency and 100 percent bus utilization
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Apr/13/00
Apr/6/00
Jan/18/00
119-pin
MT55L1MY18P,
Nov/11/99
MT55L1M18P
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Untitled
Abstract: No abstract text available
Text: i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION The AS8SLC512K32 is a high speed, 3.3V, 16Mb SRAM. The device is available with access times of 12, 15, 20
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AS8SLC512K32PEC
512Kx32
M0-47AE
AS8SLC512K32
MO-47AE]
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16mb HIGH-SPEED ASYNCHRONOUS SRAM
Abstract: GW 9n 195-pin
Text: ADVANCE‡ 16Mb: 256K x 72 PIPELINED ZBT SRAM 16Mb ZBT SRAM MT55L256Y72P, MT55V256V72P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD 2.5V I/O FEATURES • • • • • • • • • • • • • • • • 221-PIN FBGA High frequency and 100 percent bus utilization
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MT55L256Y72P,
MT55V256V72P
221-PIN
209-pin
July/16/01
195-pin
Aug/14/00
May/00
MT55L256Y72P
16mb HIGH-SPEED ASYNCHRONOUS SRAM
GW 9n
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