Untitled
Abstract: No abstract text available
Text: Si7947DP New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.014 @ VGS = - 10 V - 13.7 0.025 @ VGS = - 4.5 V - 10.1 APPLICATIONS D Battery Switch D Load Switch - 30 PowerPAKt SO-8
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Si7947DP
Si7947DP-T1
S-31264â
16-Jun-03
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M41ST84W
Abstract: M41ST84Y M4TXX-BR12SH SOH28 KDS Crystals 8.192
Text: M41ST84Y M41ST84W 5.0 or 3.0V, 512 bit 64 x 8 SERIAL RTC with SUPERVISORY FUNCTIONS FEATURES SUMMARY • 5.0 OR 3.0V OPERATING VOLTAGE I2C Figure 1. 16-pin SOIC Package ■ SERIAL INTERFACE SUPPORTS (400 KHz) BUS ■ OPTIMIZED FOR MINIMAL INTERCONNECT TO MCU
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M41ST84Y
M41ST84W
16-pin
M41ST84Y:
M41ST84W:
M41ST84W
M41ST84Y
M4TXX-BR12SH
SOH28
KDS Crystals 8.192
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CLOCK GENERATOR 1HZ
Abstract: quartz kds M41ST84W AN1012 ABE smd
Text: M41ST84W 3.0/3.3V I2C Serial RTC with Supervisory Functions KEY FEATURES • ■ ■ ■ ■ AUTOMATIC BATTERY SWITCHOVER and DESELECT – Power-fail Deselect, VPFD = 2.60V nom – Switchover, VSO = 2.50V (nom) 400kHz I2C SERIAL INTERFACE 3.0/3.3V OPERATING VOLTAGE
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M41ST84W
400kHz
500nA
16-pin
10ths/100ths
CLOCK GENERATOR 1HZ
quartz kds
M41ST84W
AN1012
ABE smd
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XO-543
Abstract: No abstract text available
Text: XO-543 Vishay Dale Full Size Clock Oscillators TTL/HCMOS Compatible FEATURES • 14 pin full size • Industry standard • Wide frequency range • Low cost • Tri-State enable/disable • Resistance weld package The XO-543 series is with 3.3V power supply. The metal
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XO-543
XO-543
999MHz
000MHz
00tance
25PPM)
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Si7368DP
Abstract: Si7368DP-T1
Text: Si7368DP Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Low rDS x Qg Figure of Merit D Optimized For High Frequency Conversion PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0055 @ VGS = 10 V 20 0.0085 @ VGS = 4.5 V
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Si7368DP
Si7368DP-T1
S-31248--Rev.
16-Jun-03
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SUM110N03-03
Abstract: No abstract text available
Text: SUM110N03-03 New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A)a 30 0.0025 @ VGS = 10 V 110a D D D D TrenchFETr Power MOSFET 175_C Junction Temperature Low Thermal Resistance Package High Threshold Voltage
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SUM110N03-03
O-263
S-31257--Rev.
16-Jun-03
SUM110N03-03
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S-31261
Abstract: SUD50P04-09L
Text: SUD50P04-09L New Product Vishay Siliconix P-Channel 40-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY - 40 D TrenchFETr Power MOSFET D 175_C Junction Temperature rDS(on) (W) ID (A)d 0.0094 @ VGS = - 10 V - 50 APPLICATIONS 0.0145 @ VGS = - 4.5 V - 50 D Automotive 12-V Boardnet
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SUD50P04-09L
O-252
S-31261--Rev.
16-Jun-03
S-31261
SUD50P04-09L
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Untitled
Abstract: No abstract text available
Text: Si5513DC Vishay Siliconix Complementary 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel - 20 rDS(on) (W) ID (A) 0.075 @ VGS = 4.5 V 4.2 0.134 @ VGS = 2.5 V 3.1 0.155 @ VGS = - 4.5 V - 2.9 0.260 @ VGS = - 2.5 V - 2.2 D1
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Si5513DC
Si5513DC-T1
S-31263--Rev.
16-Jun-03
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Untitled
Abstract: No abstract text available
Text: Si7390DP New Product Vishay Siliconix N-Channel 30-V D-S Fast Switching WFETt FEATURES D Extremely Low Qgd WFET Technology for Low Switching Losses D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile PRODUCT SUMMARY
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Si7390DP
07-mm
Si7390DP-T1
S-31250--Rev.
16-Jun-03
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SUP80N15-20L
Abstract: No abstract text available
Text: SUP80N15-20L New Product Vishay Siliconix N-Channel 150-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 150 rDS(on) (W) ID (A) 0.020 @ VGS = 10 V 80 0.022 @ VGS = 4.5 V 76 D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized With Low Threshold
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SUP80N15-20L
O-220AB
Range80N15-20L
S-31259--Rev.
16-Jun-03
SUP80N15-20L
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Untitled
Abstract: No abstract text available
Text: Si7356DP Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES D Ultra-Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile PRODUCT SUMMARY VDS (V)
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Si7356DP
07-mm
Si7356DP-T1
S-31249â
16-Jun-03
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CECC00802
Abstract: THCA
Text: VISHAY Vishay Semiconductors Assembly Instructions General Optoelectronic semiconductor devices can be mounted in any position. Connecting wires of less than 0.5 mm diameter may be bent, provided the bend is not less than 1.5 mm from the bottom of the case and no mechanical stress
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16-Jun-03
CECC00802
THCA
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CECC00802
Abstract: THCA
Text: VISHAY Vishay Semiconductors Assembly Instructions General Optoelectronic semiconductor devices can be mounted in any position. Connecting wires of less than 0.5 mm diameter may be bent, provided the bend is not less than 1.5 mm from the bottom of the case and no mechanical stress
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K/Wx30
16-Jun-03
CECC00802
THCA
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31265
Abstract: No abstract text available
Text: Si5473DC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 D TrenchFETr Power MOSFETS D Low rDS(on) and Excellent Power Handling In Compact Footpring rDS(on) (W) ID (A) 0.027 @ VGS = -4.5 V -8.1 0.0335 @ VGS = -2.5 V
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Si5473DC
Si5473DC-T1
S-31265--Rev.
16-Jun-03
31265
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Untitled
Abstract: No abstract text available
Text: SUD70N02-03P New Product Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0033 @ VGS = 10 V 39 APPLICATIONS 0.0053 @ VGS = 4.5 V 31 D Synchronous Buck Converter - Low-Side - Secondary Synchronous Rectifier VDS (V)
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SUD70N02-03P
O-252
SUD70N02-03P
S-31258--Rev.
16-Jun-03
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Untitled
Abstract: No abstract text available
Text: SUD70N03-04P New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature D Optimized for Low-Side Synchronous Rectifier Operation PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0043 @ VGS = 10 V 33
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SUD70N03-04P
O-252
SUD70N03-04P
S-31255--Rev.
16-Jun-03
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Untitled
Abstract: No abstract text available
Text: Si5935DC New Product Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.086 @ VGS = - 4.5 V - 4.1 D TrenchFETr Power MOSFETS D Low rDS(on) Dual and Excellent Power Handling In A Compact Footprint 0.121 @ VGS = - 2.5 V
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Si5935DC
Si5935DC-T1
S-31260--Rev.
16-Jun-03
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Si6544BDQ
Abstract: S-31251-Rev
Text: Si6544BDQ New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel - 30 FEATURES rDS(on) (W) ID (A) 0.032 @ VGS = 10 V 4.3 0.046 @ VGS = 4.5 V 3.7 0.043 @ VGS = - 10 V - 3.8 0.073 @ VGS = - 4.5 V
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Si6544BDQ
Si6544BDQ-T1
08-Apr-05
S-31251-Rev
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DG9424
Abstract: DG9424DQ DG9425 DG9426
Text: DG9424/9425/9426 Vishay Siliconix Low-Voltage, Dual Supply, Low rON, Quad SPST Analog Switches FEATURES BENEFITS APPLICATIONS D 2.7- thru 12-V Single Supply or "3- thru "6-Dual Supply D On-Resistance—rDS on : 1.7 W D Fast Switching —tON: 42 ns —tOFF: 28 ns
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DG9424/9425/9426
000-V
DG9424/9425/9426
HP4192A
S-31267--Rev.
16-Jun-03
DG9424
DG9424DQ
DG9425
DG9426
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ABE smd
Abstract: No abstract text available
Text: M41ST84Y M41ST84W 5.0 or 3.0V, 512 bit 64 x8 Serial RTC with Supervisory Functions FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 5.0 OR 3.0V OPERATING VOLTAGE SERIAL INTERFACE SUPPORTS I2C BUS (400kHz) OPTIMIZED FOR MINIMAL
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M41ST84Y
M41ST84W
400kHz)
M41ST84Y:
M41ST84W:
ABE smd
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Si6544BDQ
Abstract: No abstract text available
Text: Si6544BDQ New Product Vishay Siliconix N- and P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 P Channel P-Channel - 30 FEATURES rDS(on) (W) ID (A) 0.032 @ VGS = 10 V 4.3 0.046 @ VGS = 4.5 V 3.7 0.043 @ VGS = - 10 V - 3.8 0.073 @ VGS = - 4.5 V
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Si6544BDQ
Si6544BDQ-T1
S-31251--Rev.
16-Jun-03
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SUM16N20-125
Abstract: No abstract text available
Text: SUM16N20-125 New Product Vishay Siliconix N-Channel 200-V D-S 175_C MOSFET FEATURES D D D D PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 200 ID (A) 0.125 @ VGS = 10 V 16 0.150 @ VGS = 6 V 14.6 TrenchFETr Power MOSFETS 175_C Junction Temperature New Low Thermal Resistance Package
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SUM16N20-125
O-263
18-Jul-08
SUM16N20-125
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Untitled
Abstract: No abstract text available
Text: SUM110N03-03 New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A)a 30 0.0025 @ VGS = 10 V 110a D D D D TrenchFETr Power MOSFET 175_C Junction Temperature Low Thermal Resistance Package High Threshold Voltage
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SUM110N03-03
O-263
SUM110N03-03
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: 6 7 T H I S DRAWING JÊL COPYRI GHT I S U N PU B L IS H E D . R E L E A S E D FOR P U B L I C A T I O N BY AMP INCORPORATED. 19 4 5 2 3 LOG , 19 ALL R IG H T S R ES E R V E D . DI ST AD REVISIONS 25 DESCRIPTION EC 0 0 1 0 - 1 6 0 1 - 9 4 A 1/21/94 REV PER EC 0 5 1 2 - 0 0 1 6 - 0 3
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16JUN03
home/us043446/dirimod
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