Deutsch
Abstract: DT DEUTSCH
Text: Symbols and terms Symbol C CR ΔC/C c th c English Capacitance Rated capacitance Relative capacitance change Thermal capacity Arrhenius coefficient of service life c thcap Specific thermal capacity du/dt max Maximum repetitive rate of voltage rise (du/dt)s
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ADSP-21489 user manual
Abstract: ADSP-21487 sharc ADSP-214xx FFT Accelerator medialb ADSP-21160 ADSP-21161 ADSP-21489 ADSP21487 sharc iir filter IBIS Model diode
Text: SHARC Processor SUMMARY The ADSP-2148x processors are available with unique audiocentric peripherals, such as the digital applications interface, serial ports, precision clock generators, S/PDIF transceiver, asynchronous sample rate converters, input
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SP-21486/ADSP-21487/ADSP-21488/ADSP-21489
ADSP-2148x
32-bit/40-bit
D09018-0-12/10
ADSP-21489 user manual
ADSP-21487
sharc ADSP-214xx FFT Accelerator
medialb
ADSP-21160
ADSP-21161
ADSP-21489
ADSP21487
sharc iir filter
IBIS Model diode
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transistor SMD BR21
Abstract: SMD Transistor W08 adsp-21369ksz smd w04 74 smd code t04 smd code W06 transistor SMD W06 sMD .v05 smd transistor w04 SMD Transistors w06 56
Text: a SHARC Processors ADSP-21367/ADSP-21368/ADSP-21369 SUMMARY Code compatible with all other members of the SHARC family The ADSP-21367/ADSP-21368/ADSP-21369 are available with a 333 MHz core instruction rate with unique audiocentric peripherals such as the digital audio interface, S/PDIF
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ADSP-21367/ADSP-21368/ADSP-21369
ADSP-21367/ADSP-21368/ADSP-21369
32-bit/40-bit
ADSP-21369KSZ-1A2
ADSP-21368BBP-2A
256-Ball
BP-256
D05267-0-8/06
transistor SMD BR21
SMD Transistor W08
adsp-21369ksz
smd w04 74
smd code t04
smd code W06
transistor SMD W06
sMD .v05
smd transistor w04
SMD Transistors w06 56
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ADSP-21535PKB-300
Abstract: EC38J ADSP-21535 Blackfin dsp 131070
Text: PRELIMINARY TECHNICAL DATA a ADSP-21535 Preliminary Technical Data SUMMARY 300 MHz High-Performance Blackfin DSP Core Two 16-Bit MACs, Two 40-Bit ALUs, Two 40-Bit Accumulators, Four 8-Bit Video ALUs, and a 40-Bit Shifter RISC-Like Register and Instruction Model for Ease of
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ADSP-21535
16-Bit
40-Bit
40-Bit
260-Lead
B-260)
ADSP-21535PKB-300
ADSP-21535PKB-300
EC38J
ADSP-21535
Blackfin dsp
131070
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CRC-10
Abstract: PD98401AGD-MML
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD98401A ATM SAR CHIP DESCRIPTION The µPD98401A NEASCOT-S15TM is a high-performance SAR chip that segments and reassembles ATM cells. This chip can interface with an ATM network when it is included in a workstation, computer, front-end processor,
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PD98401A
NEASCOT-S15TM)
PD98401A
PD98401,
S12054E
CRC-10
PD98401AGD-MML
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T649N
Abstract: No abstract text available
Text: N Datenblatt / Data sheet Netz-Thyristor Phase Control Thyristor T649N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max Kenndaten
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T649N
A2/86
T649N
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KM17
Abstract: ND261N
Text: N Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module ND261N ND261N Elektrische Eigenschaften / Electrical properties Kenndaten Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltages Elektrische Eigenschaften T
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ND261N
KM17
ND261N
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DZ540N
Abstract: KM17
Text: N Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module DZ540N DZ540N Elektrische Eigenschaften / Electrical properties Kenndaten Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltages Elektrische Eigenschaften T
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DZ540N
DZ540N
KM17
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4650N
Abstract: KM17 TZ310N
Text: Datenblatt / Data sheet N Netz-Thyristor-Modul Phase Control Thyristor Module TZ310N TZ310N Kenndaten Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max
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TZ310N
4650N
KM17
TZ310N
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TT92N
Abstract: 4650N DT92N KM14 NT92N TD92N
Text: N Datenblatt / Data sheet Netz-Thyristor-Modul Phase Control Thyristor Module Kenndaten TT92N TT92N TD92N DT92N TT92N.K.-K TD92N.K.-A NT92N Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values
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TT92N
TD92N
DT92N
TT92N.
TD92N.
NT92N
1700hnical
TT92N
4650N
DT92N
KM14
NT92N
TD92N
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4650N
Abstract: DT310N KM17 TD310N TT310N
Text: N Datenblatt / Data sheet Netz-Thyristor-Modul Phase Control Thyristor Module TT310N TT310N Kenndaten TD310N DT310N TT310N.-A Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max
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TT310N
TD310N
DT310N
TT310N.
4650N
DT310N
KM17
TD310N
TT310N
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4650N
Abstract: KM17 TZ400N
Text: N Datenblatt / Data sheet Netz-Thyristor-Modul Phase Control Thyristor Module TZ400N TZ400N Kenndaten Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max
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TZ400N
4650N
KM17
TZ400N
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KM17
Abstract: ND260N
Text: N Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module ND260N ND260N Elektrische Eigenschaften / Electrical properties Kenndaten Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak reverse voltages Elektrische Eigenschaften T
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ND260N
KM17
ND260N
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TZ800N
Abstract: No abstract text available
Text: N Datenblatt / Data sheet Netz-Thyristor-Modul Phase Control Thyristor Module TZ800N TZ800N Kenndaten Elektrische Eigenschaften Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung Tvj = -40°C. Tvj max
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TZ800N
TZ800N
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Pertinax
Abstract: No abstract text available
Text: VISHAY _ Vishay Telefunken ▼ Assembly Instructions General Surface Mounted Devices S em iconductor devices can be m ounted in any position. The term inal length may be bent at a distance greater than 1.5 mm from the case provided no
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nas 1791
Abstract: pdt 908 aot 110 opto TC351 toshiba facsimile tc35 T08HIBAINTEGRATED AETA TC35190F
Text: ' — INTEGRATED CIRCUIT T08H IBA cmcs d ;c ;ta_ in teg r a te : TC 3 5 1 9 0 F T E C H N IC A L D A T A TC35190F SILICON V i d e o - d a t a C o e o r e s s l o n and E » p a n * l o n C o n t r o l l e r * of video-data ( VCEC 1988-11*03 . . . DESCRIPTION
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TC35190F
TC35190F
T08HIBA
TC3B190F
S9-29-20
nas 1791
pdt 908
aot 110 opto
TC351
toshiba facsimile tc35
T08HIBAINTEGRATED
AETA
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Untitled
Abstract: No abstract text available
Text: IBM0164805B IBM0164805P 8 M x 8 13/10 EDO DRAM Features • 8,388,608 word by 8 bit organization Read-Modify-Write • Single 3.3 ± 0.3V power supply Performance: • Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/Retention Time
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IBM0164805B
IBM0164805P
128ms
104ns
128ms
115ma
100ma;
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Untitled
Abstract: No abstract text available
Text: IBM11M2645H 2M x 64 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 2Mx64 Extended Data Out Page Mode DIMM • Performance: -60 -70 -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins)
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IBM11M2645H
2Mx64
104ns
124ns
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 D 1 3 2 5 L IB M 1 1 D 2 3 2 5 L 1M/2M x 32 DRAM Module Features Single 5V ± 0.5V Power Supply Low current consumption All inputs & outputs are fully TTL & C M O S compatible Extended Data Out E DO access cycle Refresh Modes: RAS-Only, CBR, and Hidden
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72-Pin
104ns
124ns
11D1325L
IBM11D2325L
26H3205
26H3206)
50H7995
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Untitled
Abstract: No abstract text available
Text: IBM0117405 IBM0117405M IBM0117405B IBM0117405P 4M x 4 11/11 EDO DRAM Features • Low Power Dissipation • 4,194,304 word by 4 bit organization - Active max - 95 mA / 85 mA / 75 mA - Standby: TTL Inputs (max) - 2.0 mA - Standby: C M O S Inputs (max) - 1.0 mA (SP version)
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IBM0117405
IBM0117405M
IBM0117405B
IBM0117405P
28H4726
28H4726.
350ns
350ns)
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Untitled
Abstract: No abstract text available
Text: IBM0165165B IBM0165165P 4M X 16 12/10 EDO DRAM Features 4,194,304 word by 16 bit organization Dual CAS Byte Read/Write Single 3.3 ± 0.3V power supply Performance: Extended Data Out Hyper Page Mode CAS before RAS Refresh - 4096 cycles/retention Time RAS only Refresh
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IBM0165165B
IBM0165165P
104ns
526mW
165ma
175ma
135ma
145ma;
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Untitled
Abstract: No abstract text available
Text: IBM11N16735B IBM11N16645B IBM11N16735C IBM11N16645C 16M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 16Mx64.16Mx72 Extended Data Out Page Mode DÎMMs • Performance: -60 Wc [RAS Access Time tCAC
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IBM11N16735B
IBM11N16645B
IBM11N16735C
IBM11N16645C
16Mx64
16Mx72
104ns
75H1640
SA14-4626-02
DD05225
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Untitled
Abstract: No abstract text available
Text: IBM11S4325BP IBM11S4325BM 4M X 32 SO DIMM Module Features 72-Pin Small Outline Dual-In -Line Memory Module Performance: -60 I -70 I i tRAc i RAS Access Time 60ns j 70ns j i tcAG i CAS Access Time 15ns I 20ns j i tAA I Access Time From Address j 30ns j 35ns !
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IBM11S4325BP
IBM11S4325BM
72-Pin
104ns
124ns
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Untitled
Abstract: No abstract text available
Text: LM V 1089 LMV1089 Dual Input, Far Field Noise Suppression Microphone Amplifier with Automatic Calibration Capability T ex a s In s t r u m e n t s Literature Number: SNAS441H t Semiconductor LMV1089 Dual Input, Far Field Noise Suppression Microphone Am plifier with Autom atic Calibration Capability
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LMV1089
SNAS441H
LMV1089
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