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    KM736V849 Search Results

    KM736V849 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM736V849-10 Samsung Electronics Pipelined NtRAM Original PDF
    KM736V849-50 Samsung Electronics Pipelined NtRAM Original PDF
    KM736V849-60 Samsung Electronics Pipelined NtRAM Original PDF
    KM736V849-67 Samsung Electronics Pipelined NtRAM Original PDF
    KM736V849-75 Samsung Electronics Pipelined NtRAM Original PDF

    KM736V849 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: KM736V849 KM718V949 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. June. 09. 1998 Preliminary 0.1 1. Changed DC parameters ICC; from 450mA to 420mA at 150MHZ.


    Original     		PDF KM736V849 KM718V949 256Kx36 512Kx18 256Kx36-Bit 450mA 420mA 150MHZ. 119BGA

    No Turnaround RAM

    Abstract: KM718V949 KM736V849
    Text: KM736V849 KM718V949 PRELIMINARY 256Kx36 & 512Kx18 Pipelined NtRAMTM Document Title 256Kx36 & 512Kx18-Bit Pipelined NtRAM TM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. June. 09. 1998 Preliminary 0.1 1. Changed DC parameters


    Original     		PDF KM736V849 KM718V949 256Kx36 512Kx18 512Kx18-Bit 450mA 420mA 150MHZ. No Turnaround RAM KM718V949 KM736V849

    Untitled

    Abstract: No abstract text available
    Text: 256Kx36 Pipelined NtRAMTM KM736V849 Document Title 256Kx36-Bit Pipelined NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. June. 09. 1998 Preliminary 0.1 1. Changed DC parameters ICC; from 450mA to 420mA at 150MHZ. ISB1; from 10mA to 20mA, I SB2 ; from 10mA to 20mA.


    Original     		PDF 256Kx36 KM736V849 256Kx36-Bit 450mA 420mA 150MHZ. 119BGA 1998tRAMTM 100-TQFP-1420A

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original     		PDF K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20

    KM62256BLG-7

    Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
    Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC


    Original     		PDF C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12

    Untitled

    Abstract: No abstract text available
    Text: KM736V849 KM718V949 PRELIMINARY 256Kx36 & 512KX18 Pipelined NfRAM Document Title 256Kx36 & 512Kx18-Bit Pipelined N/RAM™ Rev. No. History Draft Date Remark 0.0 1. Initial document. June. 09. 1998 Prelim inary 0.1 1. Changed DC param eters Ic c ; from 450m A to 420m A at 150MHZ.


    OCR Scan     		PDF KM736V849 KM718V949 256Kx36 512KX18 512Kx18-Bit 150MHZ. 100-TQFP-1420A

    Untitled

    Abstract: No abstract text available
    Text: KM736V849 KM718V949 PRELIMINARY 256Kx36 & 512KX18 Pipelined NfRAM Document Title 256Kx36 & 512Kx18-Bit Pipelined NfRAM™ Revision History Rev. No. 0.0 History 1. Initial document. Draft Date Remark June. 09. 1998 Preliminary 0.1 1. Changed DC parameters


    OCR Scan     		PDF KM736V849 KM718V949 256Kx36 512KX18 512Kx18-Bit 450mA 420mA 150MHZ. 15ELECTRONICS

    Untitled

    Abstract: No abstract text available
    Text: KM736V849 256Kx36 Pipelined NiRAM Document Title 256Kx36-Bit Pipelined NiRAM™ Revision History History Draft 0 .0 1. Initial d o c u m e n t. Jun e. 09. 19 98 P re lim in a ry 0.1 1. C h a n g e d DC p a ra m e te rs A ug. 19. 19 98 P re lim in a ry S ep. 09. 19 98


    OCR Scan     		PDF KM736V849 256Kx36-Bit 256Kx36 100-TQFP-1420A 119BGA 50REF