M368L1624DTL
Abstract: No abstract text available
Text: M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.1 May. 2002 Rev. 0.1 May. 2002 M368L1624DTL 184pin Unbuffered DDR SDRAM MODULE Revision History
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M368L1624DTL
184pin
128MB
16Mx64
16Mx16
64-bit
M368L1624DTL
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K4S561632C
Abstract: M464S1654CTS
Text: M464S1654CTS PC133/PC100 SODIMM M464S1654CTS SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S1654CTS is a 16M bit x 64 Synchro- • Performance range nous Dynamic RAM high density memory module. The Samsung M464S1654CTS consists of four CMOS 16M x 16 bit with
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M464S1654CTS
PC133/PC100
M464S1654CTS
16Mx64
16Mx16,
144-pin
100MHz
K4S561632C
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Untitled
Abstract: No abstract text available
Text: M470L1624DT0 200pin DDR SDRAM SODIMM 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM 200pin SODIMM 64-bit Non-ECC/Parity Revision 0.1 Jan. 2002 Rev. 0.1 Jan. 2002 M470L1624DT0 200pin DDR SDRAM SODIMM Revision History Revision 0.0 (Dec. 2001) 1. First release.
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M470L1624DT0
200pin
128MB
16Mx64
16Mx16
64-bit
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VG36648041DT
Abstract: VS1664648041D VS864648041D
Text: VS864648041D,VS1664648041D 8M,16MX64-Bit SDRAM Module VIS Description The VS864648041D and VS1664648041D are 8M x 64 bit and 16M bit x 64 Dual-In-Line synchronous DRAM Module DIMM . It consists of 8/16 CMOS 8Mx8 bit synchronous DRAMs (VG36648041DT) with 4
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VS864648041D
VS1664648041D
16MX64-Bit
VS1664648041D
VG36648041DT)
VS864648041D,
PC100/JEDEC
PC133
VG36648041DT
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DTM60149
Abstract: DTM60151 DTM60153 DTM60155 16Mx64 60153
Text: DTM60149, 60151, 60153, 60155 128MB-16M x 64/72, 168-Pin Unbuffered SDRAM DIMMS Identification DTM60149:16Mx64 DTM60151:16Mx64 DTM60153:16Mx72 DTM60155:16Mx72 PC100 PC133 PC100 PC133 Performance range PC100=100MHz 10ns@CL=2 PC133=133MHz(7.5ns@CL=3) Features
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DTM60149,
128MB-16M
168-Pin
DTM60149
16Mx64
DTM60151
DTM60153
16Mx72
DTM60155
16Mx64
60153
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DDR200
Abstract: DDR266B HYMD116M6456-H HYMD116M6456-L
Text: HYMD116M6456-H/L 16Mx64 Unbuffered DDR SO-DIMM PRELIMINARY DESCRIPTION Hynix HYMD116M6456-H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual InLine Memory Modules SO-DIMMs which are organized as 16Mx64 high-speed memory arrays. Hynix
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HYMD116M6456-H/L
16Mx64
HYMD116M6456-H/L
200-pin
8Mx16
400mil
200pin
DDR200
DDR266B
HYMD116M6456-H
HYMD116M6456-L
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M368L3313CT1-CB0
Abstract: M368L3313CT1 M368L3313CT1-CA0 M368L3313CT1-CA2
Text: M368L3313CT1 184pin Unbuffered DDR SDRAM MODULE 256MB DDR SDRAM MODULE 32Mx64(16Mx64*2 bank based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.1 June. 2001 Rev. 0.1 June.2001 M368L3313CT1 184pin Unbuffered DDR SDRAM MODULE
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M368L3313CT1
184pin
256MB
32Mx64
16Mx64
16Mx8
64-bit
M368L3313CT1-CB0
M368L3313CT1
M368L3313CT1-CA0
M368L3313CT1-CA2
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M368L1624BT1
Abstract: PC200
Text: M368L1624BT1 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.9 June. 2001 Rev. 0.9 June. 2001 184pin Unbuffered DDR SDRAM MODULE M368L1624BT1 Revision History
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M368L1624BT1
184pin
128MB
16Mx64
16Mx16
64-bit
133Mhz)
M368L1624BT1
PC200
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nanya
Abstract: NT128S64VH4A0GM NT128S64VH4A0GM-75B NT128S64VH4A0GM-7K NT128S64VH4A0GM-8B
Text: NT128S64VH4A0GM 128MB : 16M x 64 SDRAM SODIMM 16Mx64 bit One Bank Small Outline SDRAM Module based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Features l l 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Programmable Operation:
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NT128S64VH4A0GM
128MB
16Mx64
16Mx16,
13/9/2TECHNOLOGY
010Max
nanya
NT128S64VH4A0GM
NT128S64VH4A0GM-75B
NT128S64VH4A0GM-7K
NT128S64VH4A0GM-8B
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Untitled
Abstract: No abstract text available
Text: W3E16M64S-XBX 16Mx64 DDR SDRAM FEATURES BENEFITS DDR Data Rate = 200, 250, 266Mbps 50% SPACE SAVINGS Package: • 219 Plastic Ball Grid Array PBGA , 21 x 25mm Reduced part count 2.5V ±0.2V core power supply Reduced I/O count
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W3E16M64S-XBX
16Mx64
266Mbps
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M368L1713CT1
Abstract: No abstract text available
Text: M368L1713CT1 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx8 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.0 Mar. 2001 Rev. 0.0 Mar. 2001 M368L1713CT1 184pin Unbuffered DDR SDRAM MODULE Revision History
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M368L1713CT1
184pin
128MB
16Mx64
16Mx8
64-bit
M368L1713CT1
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HYM72V16M636AT6
Abstract: RA12
Text: 16Mx64 bits PC133 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M636AT6 Series DESCRIPTION The Hyundai HYM72V16M636AT6 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
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16Mx64
PC133
16Mx16
HYM72V16M636AT6
16Mx64bits
16Mx16bits
400mil
54pin
168pin
RA12
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HYM71V16655AT8-8
Abstract: HYM71V16655ALT8-8 HYM71V16655ALT8-P HYM71V16655ALT8-S HYM71V16655AT8 HYM71V16655AT8-P HYM71V16655AT8-S
Text: 16Mx64bits PC100 SDRAM Unbuffered DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16655AT8 Series DESCRIPTION The Hynix HYM71V16655AT8 Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
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16Mx64bits
PC100
16Mx8
HYM71V16655AT8
16Mx64bits
16Mx8bits
400mil
54pin
168pin
HYM71V16655AT8-8
HYM71V16655ALT8-8
HYM71V16655ALT8-P
HYM71V16655ALT8-S
HYM71V16655AT8-P
HYM71V16655AT8-S
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HYM71V16635AT8M
Abstract: HYM71V16635AT8M-H HYM71V16635AT8M-K HYM71V16635ALT8M-H HYM71V16635ALT8M-K
Text: 16Mx64bits PC133 SDRAM Unbuffered DIMM based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V16635AT8M Series DESCRIPTION The Hynix HYM71V16635AT8M Series are 16Mx64bits Synchronous DRAM Modules. The modules are composed of eight 16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
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16Mx64bits
PC133
16Mx8
HYM71V16635AT8M
16Mx64bits
16Mx8bits
400mil
54pin
168pin
HYM71V16635AT8M-H
HYM71V16635AT8M-K
HYM71V16635ALT8M-H
HYM71V16635ALT8M-K
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Untitled
Abstract: No abstract text available
Text: M366S1623ETS PC133/PC100 Unbuffered DIMM M366S1623ETS SDRAM DIMM 16Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S1623ETS is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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M366S1623ETS
PC133/PC100
M366S1623ETS
16Mx64
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: 16Mx64 bits Unbuffered DDR SDRAM DIMM HYMD216646A L 6J-J DESCRIPTION Hynix HYMD216646A(L)6J-J series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Lin Memory Modules (DIMMs) which are organized as 16Mx64 high-speed memory arrays. Hynix HYMD216646A(L)6J-J series
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16Mx64
HYMD216646A
184-pin
16Mx16
400mil
184pin
HMD216646A
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Untitled
Abstract: No abstract text available
Text: M368L1713DTL 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx8 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.2 May. 2002 Rev. 0.2 May. 2002 M368L1713DTL 184pin Unbuffered DDR SDRAM MODULE Revision History
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M368L1713DTL
184pin
128MB
16Mx64
16Mx8
64-bit
PC1600
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Untitled
Abstract: No abstract text available
Text: 16Mx64 bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M656B L T6 Series DESCRIPTION The HYM72V16M656B(L)T6 -Series are high speed 3.3-Volt Synchronous DRAM Modules composed of four 16Mx16 bit Synchronous DRAMs in 54-pin TSOPII and 8-pin TSSOP 2K bit EEPROM on a 144-pin Zig Zag Dual pin glass-epoxy
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16Mx64
PC100
16Mx16
HYM72V16M656B
54-pin
144-pin
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Untitled
Abstract: No abstract text available
Text: M368L1624BTL 184pin Unbuffered DDR SDRAM MODULE 128MB DDR SDRAM MODULE 16Mx64 based on 16Mx16 DDR SDRAM Unbuffered 184pin DIMM 64-bit Non-ECC/Parity Revision 0.2 May. 2002 Rev. 0.2 May. 2002 184pin Unbuffered DDR SDRAM MODULE M368L1624BTL Revision History
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M368L1624BTL
184pin
128MB
16Mx64
16Mx16
64-bit
DDR266A
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Untitled
Abstract: No abstract text available
Text: IBM11N16735B IBM11N16645B IBM11N16735C IBM11N16645C 16M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 16Mx64.16Mx72 Extended Data Out Page Mode DÎMMs • Performance: -60 Wc [RAS Access Time tCAC
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IBM11N16735B
IBM11N16645B
IBM11N16735C
IBM11N16645C
16Mx64
16Mx72
104ns
75H1640
SA14-4626-02
DD05225
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Untitled
Abstract: No abstract text available
Text: cP IITSU May 1998 Revision 1.0 data sheet PDC16UV6484C- 102/103 T-S 128MByte (16Mx64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC16UV6484C-(102/103)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 16M
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PDC16UV6484C-
128MByte
16Mx64)
PC/100
64-megabyte
168-pin,
F64842C-
100Mhz,
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A49AN
Abstract: adq38 360ac In400I
Text: I =¥= =• = IBM13N16644HC IBM13N16734HC Preliminary 16M x 64/72 2 Bank Unbuffered SDRAM Module Features • 168-Pin Unbuffered 8-Byte Dual In-Line Memory Module • 16Mx64/72 Synchronous DRAM DIMM • Three speed sorts: • -260 and -360 for PC100 applications
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168-Pin
16Mx64/72
PC100
66MHz
IBM13N16644HC
IBM13N16734HC
A49AN
adq38
360ac
In400I
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Untitled
Abstract: No abstract text available
Text: cP IITSU January 1998 Revision 1.0 data sheet PDC16UV6484A- 103/10 T-S 128MByte (16Mx64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC16UV6484A-(103/10)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 16M
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PDC16UV6484A-(
128MByte
16Mx64)
PC/100
PDC16UV6484A-
64-megabyte
168-pin,
F64842B-
128MByte
1144-pin
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Untitled
Abstract: No abstract text available
Text: cP IITSU March 1998 Revision 2.0 data sheet PDC16UV6484B- 103/10 T-S 128MByte (16Mx64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC16UV6484B-(103/10)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 16M
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PDC16UV6484B-(
128MByte
16Mx64)
PC/100
PDC16UV6484B-
64-megabyte
168-pin,
MB81F64842B-
128MByte
100Mhz
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