Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GM 71 V S 1 6 4 0 0 B /B L is the new generation dynamic RAM organized 4,194,304 words x 4 Bit. GM71 V (S )16400B /B L has realized higher density, higher performance and various functions by utilizing advanced CMOS
|
OCR Scan
|
16400B
GM71V
16400B/BL
300mil
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 16400B Series 4,194,304-Word x 4-Bit Dynamic Random Access Memory HITACHI ADE-203-368À Z Rev. 1.0 Nov. 10, 1994 Description The Hitachi HM51W 16400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The 16400B offers Fast
|
OCR Scan
|
HM51W16400B
304-Word
ADE-203-368À
HM51W
16400B
mW/252
mW/234
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA 16400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheTC 16400B ST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. T heTC 16400B ST uti lizes Toshiba's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide operating mar
|
OCR Scan
|
TC51V16400BST-60/70
51V16400B
TC51V16400BST
300mil)
|
PDF
|
1MX16BIT
Abstract: 16MX1
Text: 'H Y U N D A I TABLE OF CONTENTS 1. TABLE OF CONTENTS In d e x . 1 2. PRODUCT QUICK REFERENCE
|
OCR Scan
|
256Kx4-bit,
1MX16BIT
16MX1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADE-203-368 Z 16400B/BL Series 4,194,304-word x 4-bit Dynamic Random Access Memory Preliminary Rev. 0.0 Mar. 23, 1995 HITACHI T he H ita c h i H M 5 1W 16 4 0 0 B /B L is a CM O S dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology
|
OCR Scan
|
ADE-203-368
HM51W16400B/BL
304-word
16400B/BL
16400BS-6
16400BS-7
16400BS-8
16400BLS-6
16400BLS-7
|
PDF
|
51w4260
Abstract: 51W4265C HM 338 262144-WORD
Text: Contents • L in e U p o f H ita c h i IC M e m o rie s . 7 • P a c k a g e In f o rm a tio n s .
|
OCR Scan
|
HM5283206
131072-word
32-bit
HM530281R
331776-word
HM538253B/
262144-word
HM538254B
HM538123B
51w4260
51W4265C
HM 338
|
PDF
|
27C256AG
Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Text: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series
|
OCR Scan
|
512kx8512k
28512A
674100H
671400H
8128B
1664H
9127H
8127H
27C256AG
4265C
514270
101AG
BK 4367
4165A
5118160
4270-D
4096A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY51 V17400B.HY51 16400B 4M x4, F as t Page m ode DESCRIPTION T h is fa m ily is a 16M b it d y n a m ic RAM o rg a n iz e d 4 ,1 9 4 ,3 0 4 x 4 -b it c o n fig u ra tio n w ith F ast P ag e m od e C M O S D R A M s. Fast Page m ode is a kind o f pa ge m ode w h ich is use ful fo r th e read o p e ra tio n . T h e c irc u it and pro ce ss d e sig n a llo w th is
|
OCR Scan
|
HY51V17400B
V16400B
A0-A11)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70
|
OCR Scan
|
1000BJ-50
1000BJ-60
1000BJ-70
1000BJL-50
1000BJL-60
1000BJL-70
514256B-50
514256B-60
514256B-70
514256BJ-50
|
PDF
|
5117400
Abstract: sem 2500 7212 tube
Text: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1
|
OCR Scan
|
P-SOJ-26/20-1
J-26/20-5?
P-SOJ-28-2
P-SOJ-40-1
P-TSOPII-26/20-1
P-SOJ-26/24-1
1000BJ
514256BJ
514100BJ
514400BJ
5117400
sem 2500
7212 tube
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 72-Bit Dynamic RAM Module ECC - Module HYM 72V4000GS-50/-60 HYM 72V4010GS-50/-60 Advanced Inform ation • 4 194 304 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle tim e (-50 version) 60 ns access tim e
|
OCR Scan
|
72-Bit
72V4000GS-50/-60
72V4010GS-50/-60
fi23SbGS
72V4000/1OGS-50/-6O
72-ECC
0235hG5
fl23SbOS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DRAM 4 • DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V+0.3V, Ta=0°C to +70°C Organization (Wx b ) Access Time max. (ns) Part Number Cycle Time min. (ns) Power Consumption max. (mW) Packages Standby Mode ! (CMOS level) SOJ TSOP 1.8 26P 26P 0.54 26P 26P
|
OCR Scan
|
B81V16400A-60
B81V16400A-70
6400A-60L
1V16400A-70L
B81V17400A-60
B81V17400A-70
7400A-60L
B81V17400A-70L
16400B-50
MB81V1640QB-60
|
PDF
|
HY5116400BT
Abstract: No abstract text available
Text: -HYUNDAI • HY5117400B, 16400B 4Mx4, F ait Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mods which is useful for the read operation. The circuit and process design allow this
|
OCR Scan
|
HY5117400B,
HY5116400B
A0-A11)
HY5116400BT
|
PDF
|
siemens EM 235
Abstract: 6a2l
Text: SIEM ENS 4M X 4-Bit Dynamic RAM 3.3 V, 4k-refresh HYB 16400BJ/BT -50/-60/-70 Preliminary Inform ation • • • • • • 4 194 304 words by 4-bit organization 0 to 70 C operating temperature Fast access and cycle ti me RAS access time: 50 ns (-50 version)
|
OCR Scan
|
3116400BJ/BT
235b05
00714b3
DD714b4
siemens EM 235
6a2l
|
PDF
|
|
|
csr bc4
Abstract: TC5116400BSJ BST60
Text: TOSHIBA m C|C]t:,724fl QD2fl2Ci;L 510 • -16400BSJ/BSTW70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description 16400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bit. 16400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
|
OCR Scan
|
724fl
TC5116400BSJ/BSTW70
TC5116400BSJ/BST
300mil)
csr bc4
TC5116400BSJ
BST60
|
PDF
|
bt60
Abstract: siemens im 304 Q1050
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 16400BJ -50/-60/-70 HYB 16400BT -50/-60/-70 Advanced Inform ation • 4 194 304 words by 4-bit organization • 0 to 70 C operating tem perature • Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version)
|
OCR Scan
|
5116400BJ
5116400BT
bt60
siemens im 304
Q1050
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEM ENS 4M X 4-Bit Dynamic RAM HYB 16400BJ -50/-60/-70 HYB 16400BT -50/-60/-70 Advanced Inform ation • • • • • 4 194 304 w ords by 4-bit organization 0 to 70 'C operating tem perature Fast access and cycle time RAS access time: 50 ns -50 version
|
OCR Scan
|
5116400BJ
5116400BT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: • v in r s 'jB T S '- " . . P R M 5 M 4 V 1 6 4 B J , T P t u >R - 6 T S - 6 I- 7 , - 7 S ’. s i s , - 8 , - 8 , S FAST PAGE MODE 16777216-BIT 4194304-WQRD BY 4-BIT DYNAMIC RAM DESCRIPTION This is a family of 4194304-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process,and is ideal
|
OCR Scan
|
16777216-BIT
4194304-WQRD
4194304-word
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 72-Bit Dynamic RAM Module ECO Module HYM 72V4000GS-50/-60 Advanced Inform ation • 4 194 304 words by 72-bit ECC - mode organization for PC main m em ory applications • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version)
|
OCR Scan
|
72-Bit
72V4000GS-50/-60
fl23SLDS
72-ECC
L-DIM-168-5
GLD05927
D1234Q5
|
PDF
|
Untitled
Abstract: No abstract text available
Text: •«HYUNDAI HY51V17400B, 16400B 4M x 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION T h is fa m ily is a 16M b it d y n a m ic R A M o rg a n iz e d 4 ,1 9 4 ,3 0 4 x 4 -b it c o n fig u ra tio n w ith F a s t P a g e m o d e C M O S D R A M s. F a s t P a g e m o d e o ffe rs h ig h s p e e d
|
OCR Scan
|
HY51V17400B,
HY51V16400B
17400B
HY51V17400BSLJ
Y51V17400BT
16400B
Y51V16400BSLJ
Y51V16400BT
Y51V16400BSLT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 16400B / NN5117400B series Fast Page Mode CMOS 4M x 4bit Dynamic RAM NPN a DESCRIPTION The 16400B / NN5117400B series is a high performance CMOS Dynamic Random Access Memory organized as 4,194,304 words by 4 bits. The 16400B / NN5117400B series is fabricated with advanced CMOS technology and de
|
OCR Scan
|
NN5116400B
NN5117400B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 4 V 1 6 4 0 0 B J ,T P - 6 ,-7 ,- 6 S .- 7 S FAST PAGE MODE 16777216-BIT 4194304-WORD BY 4-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 4194304-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process,and is ideal
|
OCR Scan
|
16777216-BIT
4194304-WORD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The 16400B/BL is the new generation dynamic RAM organized 4,194,304 words x 4 Bit. 16400B/BL has realized higher density, h ig h e r perfo rm an ce and vario u s functions by utilizing advanced CMOS process
|
OCR Scan
|
GM71C16400B/BL
GM7ICI6400B/BL
300mil
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEM ENS 4M X 4-Bit Dynamic RAM 3.3 V, 4k-refresh HYB 16400BJ/BT -50/-60/-70 Prelim inary Inform ation • • • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating tem perature Fast access and cycle tim e RAS access time: 50 ns (-50 version)
|
OCR Scan
|
3116400BJ/BT
fi235bD5
0G714b3
6S35b05
DQ714b4
|
PDF
|
