Contextual Info: MEMORY 1 M x 16 BIT HYPE:R pAGE M 0 DE DY NAMIIC R A M MB81 16165B -5 0/-6i0=^ • W l m m r V r R 1 ■ w V r V r . \ r / V CMOS 1,048,576 x 16 Bit Hyper Page Mode Dynamic RAM ■ DESCRIPTION The Fujitsu 16165B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory

lrct

Abstract: B77S
Contextual Info: ProUm m &Ty S p n a . MITSUBISHI LSIs 16165BJ,TP-6,-7,-8,-6S,-7S,-8S HYPEFl PAGE MODE 16777216-BIT 1048576-W QRD BY 16-BIT DYNAMIC RAM P IN C O N F IG U R A T IO N (T O P V IE W ) D E S C R IP T IO N T h is is a ta m ily o f 1 0 4 8 5 7 6 -v o r d

Contextual Info: DRAM 6 • DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V±0.3V, T a=0°C Organization (Wxb) Access Time max. (ns) Part Number Power Consumption max. (mW) Cycle Time min. (ns) M B81V 16 160 A -60 60[15]*1 1 10[40]"3 324 M B81V 16 160 A -70 70(17]*1 130[45]*3

Contextual Info: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70

d8430

Abstract: 18165BSJ-60 BST60
Contextual Info: SIEM EN S 1M X 16-Bit EDO- Dynamic RAM 1 k & 4k-Refresh HYB 16165BSJ/BST(L)-5Q/-60/-70 HYB 3118165BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 *C operating temperature • Performance: -50 -60 ^RAC RAS access time

Contextual Info: 16165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-372A Z Preliminary Rev. 1.0 Dec. 15, 1995 Description The Hitachi 16165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The 16165B offers

Contextual Info: 16165B Series HM51W18165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-541 Z Preliminary Rev. 0.0 Mar. 20, 1996 Description The Hitachi 16165B Series, HM51W18165B Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS

SIEMENS BST

Abstract: SIEMENS BST t SIEMENS BST h 35 SIEMENS BST L 35 90 BST70 BST60
Contextual Info: SIEMENS 1M X 16-Bit EDO- Dynamic RAM 1 k & 4k-Refresh HYB 16165BSJ/BST(L)-50/-60/-70 HYB 3118165BSJ/BST(L)-50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ¿RAC

TC51V

Abstract: TC51V16165BFT-70
Contextual Info: TOSHIBA m C|C1Ci7E4fl D02fi3flfl T07 m 16165BFT-70 PRELIMINARY 1,048,576 WORD X 16 BIT EDO DYNAMIC RAM Description The T C 5 1 V 1 6 1 65B F T is th e H yper P age M o d e (EDO) d yn am ic RAM organized 1 ,0 4 8 ,5 7 6 w o rd s by 16 bits. The TC 5 1 V 1 6 1 6 5 B F T utilizes Toshiba's C M O S silicon g a te p ro ce ss te c h n o lo g y as well as a d vanced circuit te ch n iq u e s to provide

Contextual Info: TOSHIBA m E|[lcJ7EL4fl D02fl3ûfl T07 • 16165BFT-70 PRELIMINARY 1,048,576 WORD X 16 BIT EDO DYNAMIC RAM Description The 16165BFT is the Hyper Page M ode (EDO) dynamic RAM organized 1,048,576 w ords by 16 bits. The 16165BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide