Untitled
Abstract: No abstract text available
Text: TOSHIBA m E|[lcJ7EL4fl D02fl3ûfl T07 • TC51V16165BFT-70 PRELIMINARY 1,048,576 WORD X 16 BIT EDO DYNAMIC RAM Description The TC51V16165BFT is the Hyper Page M ode (EDO) dynamic RAM organized 1,048,576 w ords by 16 bits. The TC51V16165BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide
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D02fl3Ã
TC51V16165BFT-70
TC51V16165BFT
B-136
DR16180695
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A2530
Abstract: No abstract text available
Text: For Immediate Assistance, Contact Your Local Salesperson B U R R -B R O W N 0 PGA204 PGA205 Programmable Gain INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION • DIGITALLY PROGRAMMABLE GAIN: The PGA204 and PGA205 are low cost, general pur pose programmable-gain instrumentation amplifiers
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PGA204
PGA205
PGA204
PGA205
PGA204â
PGA205â
PGA204:
000V/V
A2530
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Untitled
Abstract: No abstract text available
Text: DS4372-2.6 ITC14410012D POWERLINE N-CHANNELIGBT CHIP FEATURES • n - Channel. ■ Enhancement Mode. ■ High Input Impedance. ■ High Switching Speed. ■ Latch-Free Operation. ■ Low Forward Voltage Drop. ■ Short Circuit Capability 10(xs TYPICAL KEY PARAMETERS (25 C)
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DS4372-2
ITC14410012D
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbSB^Bl DDSfiBbR 5T4 « A P X b'lE P Philips Semiconductors Product Specification Silicon Diffused Power Transistor BU2520AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
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BU2520AF
PINNING-SOT199
bb53T31
D02fl37S
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BST60
Abstract: No abstract text available
Text: T O S H I B A ^0^7240 OOHôBlS ÔÔ4 • - TC5116405BSJ/BST-60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116405BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5116405BSJ/
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TC5116405BSJ/BST-60
TC5116405BSJ/BST
TC5116405BSJ/
300mil)
DR16060295
i72Mfl
BST60
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Untitled
Abstract: No abstract text available
Text: IIP ^ Y ^ ^QT72 4 f l 0 0 2 ñ 2 cí i:í ñ 01 TC51V16400BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description TheTC51V16400BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. TheTC51 V16400BST uti lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating mar
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TC51V16400BST-60/70
TheTC51V16400BST
TheTC51
V16400BST
TC51V16400BST
300mil)
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SSH10N80
Abstract: 250M SSH10N70
Text: N-CHANNEL POWER MOSFETS SSH10N80/70 FEATURES • Lower Rds<on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • improved high temperature reliability
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SSH10N80/70
SSH10N80
SSH10N70
250M
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M44265CJ,TP-5,-6,-7, -5S,-6S,-7S EDO HYPER PAGE M O DE 4194304-BIT (262144-W O RD BY 16-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 16-bit dynamic RAMs with Hyper Page mode fuction, fabricated with the high performance
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M5M44265CJ
4194304-BIT
62144-W
16-BIT)
262144-word
16-bit
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