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Panasonic Electronic Components ERJ-8ENF3160V RES SMD 316 OHM 1% 1/4W 1206
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERJ-8ENF3160V	Reel	95,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.01567	Buy Now
Diodes Incorporated DSS4160V-7 TRANS NPN 60V 1A SOT563
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DSS4160V-7	Reel	36,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.06464	Buy Now
	DSS4160V-7	Cut Tape	2,883		1	1 $0.43 10 $0.304 100 $0.1535 1000 $0.09292 10000 $0.09292	Buy Now
Avnet Americas	DSS4160V-7	Reel		8 Weeks	6,000	1 - 10 - 100 - 1000 - 10000 $0.04249	Buy Now
	DSS4160V-7	Reel		8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.04096	Buy Now
Mouser Electronics	DSS4160V-7		74,259			1 $0.43 10 $0.304 100 $0.124 1000 $0.093 10000 $0.052	Buy Now
Rutronik	DSS4160V-7	Reel	21,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.0599	Buy Now
Avnet Asia	DSS4160V-7			12 Weeks	6,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Panasonic Electronic Components ERA-6AHD160V RES SMD 16 OHM 0.5% 1/8W 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERA-6AHD160V	Reel	15,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.043	Buy Now
	ERA-6AHD160V	Cut Tape	4,800		1	1 $0.29 10 $0.2 100 $0.0799 1000 $0.043 10000 $0.043	Buy Now
Master Electronics	ERA-6AHD160V					1 - 10 - 100 - 1000 - 10000 $0.0522	Buy Now
Panasonic Electronic Components ERJ-P08J160V RES SMD 16 OHM 5% 2/3W 1206
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERJ-P08J160V	Reel	15,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.01907	Buy Now
	ERJ-P08J160V	Cut Tape	2,323		1	1 $0.15 10 $0.076 100 $0.0436 1000 $0.02753 10000 $0.02753	Buy Now
onsemi NRVUHS160VT3G DIODE GEN PURP 600V 1A SMB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NRVUHS160VT3G	Reel	5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.12771	Buy Now
	NRVUHS160VT3G	Cut Tape	2,186		1	1 $0.49 10 $0.383 100 $0.2299 1000 $0.14474 10000 $0.14474	Buy Now
TME	NRVUHS160VT3G				3	1 - 10 $0.257 100 $0.194 1000 $0.154 10000 $0.145	Get Quote

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160V Datasheets (31)

Part	Manufacturer	Description	Type	PDF
160V	Lattice Semiconductor	In-System Programmable 3.3V Generic Digital CrosspointTM	Original	PDF
160VXR1200MEFC25X50	Rubycon	Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 1200UF 20% 160V SNAP	Original	PDF
160VXR1200MEFCSN25X50	Rubycon	Aluminum Capacitors, Capacitors, CAP ALUM 1200UF 160V 20% SNAP	Original	PDF
160VXR1800MEFCSN35X40	Rubycon	Aluminum Capacitors, Capacitors, CAP ALUM 1800UF 160V 20% SNAP	Original	PDF
160VXR2200MEFC35X45	Rubycon	Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 2200UF 20% 160V SNAP	Original	PDF
160VXR270MEFC22X25	Rubycon	Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 270UF 20% 160V SNAP	Original	PDF
160VXR330MEFC22X25	Rubycon	Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 330UF 20% 160V SNAP	Original	PDF
160VXR390M22X30	Rubycon	Large Can Type Aluminum Electrolytic Capacitor	Original	PDF
160VXR390M25X25	Rubycon	Large Can Type Aluminum Electrolytic Capacitor	Original	PDF
160VXR390MEFCSN25X25	Rubycon	Aluminum Capacitors, Capacitors, CAP ALUM 390UF 160V 20% SNAP	Original	PDF
160VXR470M22X35	Rubycon	Large Can Type Aluminum Electrolytic Capacitor	Original	PDF
160VXR470M25X30	Rubycon	Large Can Type Aluminum Electrolytic Capacitor	Original	PDF
160VXR470MEFC22X35	Rubycon	Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 470UF 20% 160V SNAP	Original	PDF
160VXR470MEFC25X30	Rubycon	Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 470UF 20% 160V SNAP	Original	PDF

160VXR560M22X40	Rubycon	Large Can Type Aluminum Electrolytic Capacitor	Original	PDF
160VXR560M25X30	Rubycon	Large Can Type Aluminum Electrolytic Capacitor	Original	PDF
160VXR560M30X25	Rubycon	Large Can Type Aluminum Electrolytic Capacitor	Original	PDF
160VXR560MEFC22X40	Rubycon	Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 560UF 20% 160V SNAP	Original	PDF
160VXR560MEFC25X30	Rubycon	Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 560UF 20% 160V SNAP	Original	PDF
160VXR560MEFCSN25X30	Rubycon	Aluminum Capacitors, Capacitors, CAP ALUM 560UF 160V 20% SNAP	Original	PDF

160V Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MJE5180 Abstract: 5182 MJE5181 MJE5182 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJE5180/5181/5182 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 120V(Min)- MJE5180 = 140V(Min)- MJE5181 = 160V(Min)- MJE5182 ·Low Saturation Voltage ·Complement to Type MJE5170/5171/5172	Original	PDF	MJE5180/5181/5182 MJE5180 MJE5181 MJE5182 MJE5170/5171/5172 MJE5180 5182 MJE5181 MJE5182
Untitled Abstract: No abstract text available Text: Industrial Line – T8W Series 8W 4:1 SINGLE & DUAL OUTPUT HIGH PERFORMANCE DC/DC CONVERTER Specifications INPUT Voltage range 24V nominal input 9-36VDC 48V nominal input 18-75VDC 110V nominal input 43-160VDC Input filter Pi type. Input surge voltage 24V input	Original	PDF	9-36VDC 18-75VDC 43-160VDC 50VDC 100mS 100VDC 170VDC 450mS 18VDC 43VDC
MMBT5551L Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain Lead-free: MMBT5551L Halogen-free: MMBT5551G ORDERING INFORMATION Normal MMBT5551-x-AE3-R	Original	PDF	MMBT5551 MMBT5551L MMBT5551G MMBT5551-x-AE3-R MMBT5551L-x-AE3-R MMBT5551G-x-AE3-R OT-23 QW-R206-010 MMBT5551L
Untitled Abstract: No abstract text available Text: KST5551 KST5551 Amplifier Transistor • Collector-Emitter Voltage: VCEO=160V • Collector Power Dissipation: PC max =350mW 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	PDF	KST5551 350mW OT-23 2N5551
Untitled Abstract: No abstract text available Text: KEMET Part Number: PEH169QO447VMB2 Capacitor, aluminum, 4700 uF, +/-20% Tol, -40/+85C, 160VDC@85C General Information Supplier: Style: KEMET Screw Terminal Aluminum Electrolytic Screw Terminal Lead Type: Oval Threaded Inserts- M5 Part Type Description: Weight:	Original	PDF	PEH169QO447VMB2 160VDC 160VDC c02650e5-c48f-4553-8e8d-0e9aeda2f4ea
MMBT5551A Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V High current gain . 2 1 3 MARKING G1 SOT-23 Pb-free plating product number:MMBT5551L PIN CONFIGURATION	Original	PDF	MMBT5551 OT-23 MMBT5551L MMBT5551-AE3-R MMBT5551L-AE3-R OT-23 QW-R206-010 MMBT5551A
marking G1 sot23 UTC Abstract: No abstract text available Text: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V High current gain 2 1 APPLICATIONS Telephone switching circuit *Amplifier 3 MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR	Original	PDF	MMBT5551 OT-23 QW-R206-010, marking G1 sot23 UTC
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD PZT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain ORDERING INFORMATION Ordering Number Lead Free Halogen Free PZT5551L-x-AA3-R PZT5551G-x-AA3-R	Original	PDF	PZT5551 PZT5551L-x-AA3-R PZT5551G-x-AA3-R OT-223 QW-R207-007
2SD1918 Abstract: 80MHZ Text: Transistors SMD Type Silicon NPN Epitaxial 2SD1918 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.15 1.50 -0.15 TO-252 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High breakdown voltage. BVCEO = 160V +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1	Original	PDF	2SD1918 O-252 80MHZ) 30MHz 2SD1918 80MHZ
Untitled Abstract: No abstract text available Text: BLF8G20LS-160V Power LDMOS transistor Rev. 2 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1.	Original	PDF	BLF8G20LS-160V
EN 61373 Category 1 Class B Abstract: CN200 EN50155 IEC60571 CN30A110 CN200A CN100A110-12 CN200A110 Text: • 60 - 160VDC Input to EN50155/IEC60571 • EN/IEC 61373 Shock and Vibration • Base plate Cooled • Full Power at 100°C base plate • Five Year Warranty Key Market Segments & Applications Railway Applications Suitable for battery powered railway systems	Original	PDF	160VDC EN50155/IEC60571 110VDC CN30A110, CN50A110, CN100A110, CN200A110 Sept10 EN 61373 Category 1 Class B CN200 EN50155 IEC60571 CN30A110 CN200A CN100A110-12 CN200A110
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2N5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  FEATURES * High collector-emitter voltage: VCEO=160V * High current gain  APPLICATIONS * Telephone switching circuit * Amplifier  ORDERING INFORMATION	Original	PDF	2N5551 2N5551L-x-AB3-R 2N5551G-x-AB3-R OT-89 2N5551L-x-T92-B 2N5551G-x-T92-B 2N5551L-x-T92-K 2N5551G-x-T92-K 2N5551L-x-T92-A-B 2N5551G-x-T92-A-B
2SB649 Abstract: 669a 2SB649A Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB649 2SB649A DESCRIPTION •With TO-126 package ·Complement to type 2SD669/669A ·High breakdown voltage VCEO:-120/-160V ·High current -1.5A ·Low saturation voltage,excellent hFE linearity	Original	PDF	2SB649 2SB649A O-126 2SD669/669A -120/-160V 2SB649 -160V; 669a 2SB649A
SBT5401 Abstract: SBT5551 Text: SBT5551 Semiconductor NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE sat =0.5V(MAX.) • Complementary pair with SBT5401	Original	PDF	SBT5551 SBT5401 OT-23 KST-2012-000 SBT5401 SBT5551

2N5551 Abstract: No abstract text available Text: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage	OCR Scan	PDF	2N5551 100MHz 2N5551
Untitled Abstract: No abstract text available Text: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD2449 PO W ER AM PLIFIER APPLICATIONS Unit in mm 2 0.SM A X . • High Breakdown Voltage : V q e o = 160V (Min.) • Complementary to 2SB1594 ¿ 3 .3 ± 0 .2 pr y > M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC	OCR Scan	PDF	2SD2449 2SB1594
2N5401 Abstract: No abstract text available Text: i TOSHIBA TRANSISTOR 2N5401 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VC b o =-160V, VCe o = -150V . Low Leakage Current : ICB0=5-50nA(Max. ) @ V c b = - 120V	OCR Scan	PDF	2N5401 -160V, 5-50nA -50mA, -10mA 100MHz 10Hz-15 2N5401
TP0616N3 Abstract: TP0616N2 Text: ^ Supertex inc. TP06C Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices O rder Num ber / Package R dS ON (max) ' d (ON) ^G S fth ) BV dgs (min) (m ax) TO-39 TO-92 -160V 1212 -0.75A -2.4V TP0616N2	OCR Scan	PDF	-160V -200V TP06C TP0616N2 TP0620N2 TP0616N3 TP0620N3 O-220 TP0616N5 TP0620N5
d3s diode Abstract: EIGHT n-channel MOSFET ARRAY AN0140ND Text: AN01 in c . 8 Channel MOSFET Array Monolithic N-Channel Enchancement Mode Ordering Information_ Order Number / Package * ' If BV qss/ BV dgs min RDS(ON) (max) 160V 350Ü 200V 300Ì2 300V 300CÌ 25mA 320V 350£2 25mA 400V 350£2	OCR Scan	PDF	18-Lead AN0116NA AN0120NA AN0130NA AN0132NA AN0140NA SOW-20* AN0116WG AN0132WG AN0140WG d3s diode EIGHT n-channel MOSFET ARRAY AN0140ND
VP0116N5 Abstract: VP0116N2 25-C2 VP01c Text: VP 01C fàk S u p e r te x inc. /p \ ^ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices f Order Number / Package B^dss / ^DS O N ^D(ON) b v dgs (max) (min) TO-39 TO-92 TO-220 DICEt -160V 2 5 ii -100mA VP0116N2	OCR Scan	PDF	VP0116N2 VP0120N2 VP0116N3 VP0120N3 O-220 VP0116N5 VP0120N5 VP0116ND VP0120ND -100mA 25-C2 VP01c
Untitled Abstract: No abstract text available Text: ^ . T P 06C Supertex inc Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices t Order Number / Package BV DSS/ ^ D S O N ' d (ON) ^ G S (lh ) b v dgs (max) (min) (max) -160V 12Q -0.75A -2.4A TP0616N2	OCR Scan	PDF	TP0616N2 TP0620N2 TP0616N3 TP0620N3 O-220 TP0616N5 TP0620N5 TP0616ND TP0620ND -160V
VN0116N3 Abstract: Vn0116 VN01-1 VN0116N2 VN0120ND VN0120N2 Text: VN0116 VN0120 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdss / R d S ON Order Number / Package I d (ON) BVdgs (max) (min) TO-39 TO-92 TO-220 Dice+ 160V 10Q 0.4A VN0116N2 VN0116N3 VN0116N5 VN0116ND 200V	OCR Scan	PDF	VN0116 VN0120 VN0116N2 VN0120N2 VN0116N3 VN0120N3 O-220 VN0116N5 VN0120N5 VN0116ND VN01-1 VN0120ND
Untitled Abstract: No abstract text available Text: HV217/HV218 Low Charge Injection 8-Channel High Voltage Analog Switch Ordering Information_ Package Options Operating v PP Vpp - v NN Die in waffle pack 24-pin plastic DIP 28-lead plastic chip carrier 28-lead SOW 40V to 80V 160V	OCR Scan	PDF	HV217/HV218 HV21716X HV21816X 24-pin HV21716P HV21816P 28-lead HV21716PJ HV21816PJ
Untitled Abstract: No abstract text available Text: A L U M IN U M E L E C T R O L Y T IC Subminiature, 6.3V to 100V NEV, NEH Series . Pg. 2 Subminiature, High Voltage, 160V to 450V (NEVH, NEHH Series) .Pg- 5 Non-Polarized (NPR, NPA Series). Pg- 7	OCR Scan	PDF	CAP-L01

160V Search Results

160V Price and Stock

Panasonic Electronic Components ERJ-8ENF3160V

Diodes Incorporated DSS4160V-7

Panasonic Electronic Components ERA-6AHD160V

Panasonic Electronic Components ERJ-P08J160V

onsemi NRVUHS160VT3G

160V Datasheets (31)

160V Datasheets Context Search

MJE5180

Untitled

MMBT5551L

Untitled

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MMBT5551A

marking G1 sot23 UTC

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2SD1918

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EN 61373 Category 1 Class B

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2SB649

SBT5401

2N5551

Untitled

2N5401

TP0616N3

d3s diode

VP0116N5

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VN0116N3

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