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    16 GBIT FLASH Search Results

    16 GBIT FLASH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADN4656BRSZ-RL7 Analog Devices 3.75kVRMS Dual ISO 1Rx1Tx Gbit Visit Analog Devices Buy
    ADN4656BRSZ Analog Devices 3.75kVRMS Dual ISO 1Rx1Tx Gbit Visit Analog Devices Buy
    ADN4655BRSZ-RL7 Analog Devices 3.75kVRMS Dual ISO 1Tx1Rx Gbit Visit Analog Devices Buy
    ADN4656BRWZ-RL7 Analog Devices 5kVRMS Dual ISO 1Rx1Tx Gbit LV Visit Analog Devices Buy
    ADN4654BRSZ Analog Devices 3.75kVRMS Dual ISO 2Tx Gbit LV Visit Analog Devices Buy

    16 GBIT FLASH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode


    Original     		PDF P30-65nm 512-Mbit, 100ns 105ns 16-word 52MHz 110ns 512-word 46MByte/s

    pc28f00ap30

    Abstract: JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF
    Text: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode


    Original     		PDF P30-65nm 512-Mbit, 100ns 105ns 16-word 52MHz 110ns 512-word 46MByte/s pc28f00ap30 JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF

    pc28f00ap30

    Abstract: JS28F512P30 PC28F00AP30TF PC28F00AP30EF PC28F512P30 JS28F512 PC28F512P30TF JS28F512P30BF pc28f00ap30bf PC28F00BP30
    Text: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode


    Original     		PDF P30-65nm 512-Mbit, 100ns 105ns 16-word 52MHz 110ns 512-word 46MByte/s pc28f00ap30 JS28F512P30 PC28F00AP30TF PC28F00AP30EF PC28F512P30 JS28F512 PC28F512P30TF JS28F512P30BF pc28f00ap30bf PC28F00BP30

    16G nand

    Abstract: No abstract text available
    Text: NANDxxGW3F2A 8-Gbit, 16-Gbit, 4224-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High density NAND flash memory – 8, 16 Gbits of memory array – Cost-effective solutions for mass storage applications ■


    Original     		PDF 16-Gbit, 4224-byte 16G nand

    NAND16GW3D2A

    Abstract: NAND32GW3D4A NAND08GW3D2A
    Text: NAND08GW3D2A NAND16GW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area


    Original     		PDF NAND08GW3D2A NAND16GW3D2A 16-Gbit, 4224-byte 16-Gbi" NAND16GW3D2A NAND32GW3D4A

    NAND08GW3F2A

    Abstract: NAND08GW3F nand16gw3
    Text: NAND08GW3F2A NAND16GW3F2A 8-Gbit, 16-Gbit, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High density SLC NAND flash memory – 8, 16 Gbits of memory array – Cost-effective solutions for mass storage


    Original     		PDF NAND08GW3F2A NAND16GW3F2A 16-Gbit, 4224-byte NAND08GW3F nand16gw3

    NAND08GW3F2A

    Abstract: transistor sr61 NAND08GW3F NAND16GW3F2A A20-A32 transistor SR60
    Text: NAND08GW3F2A NAND16GW3F2A 8-Gbit, 16-Gbit, 4224-byte page, 3 V supply, multiplane architecture, SLC NAND flash memories Preliminary Data Features • High density SLC NAND flash memory – 8, 16 Gbits of memory array – Cost-effective solutions for mass storage


    Original     		PDF NAND08GW3F2A NAND16GW3F2A 16-Gbit, 4224-byte transistor sr61 NAND08GW3F NAND16GW3F2A A20-A32 transistor SR60

    LGA52

    Abstract: LGA-52 16gb 8Gb 64 gbit nand flash NAND16GW3C4A TSOP48 outline 16G nand 16G nand flash NS4258 IBIS Models
    Text: NAND08GW3C2A NAND16GW3C4A 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Preliminary Data Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage


    Original     		PDF NAND08GW3C2A NAND16GW3C4A LGA52 LGA-52 16gb 8Gb 64 gbit nand flash NAND16GW3C4A TSOP48 outline 16G nand 16G nand flash NS4258 IBIS Models

    LGA52

    Abstract: LGA-52 NAND16GW3C4A NAND08GW3C2A 16G nand JESD97 NAND16GW3 NS4258
    Text: NAND08GW3C2A NAND16GW3C4A 8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage


    Original     		PDF NAND08GW3C2A NAND16GW3C4A LGA52 LGA-52 NAND16GW3C4A NAND08GW3C2A 16G nand JESD97 NAND16GW3 NS4258

    LGA52

    Abstract: LGA-52 ULGA52 nand 16g 16G nand flash NAND08GW3C2B NAND16GW3 NAND16GW3C4A NAND16GW3C4B
    Text: NAND08GW3C2B NAND16GW3C4B 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory Target Specification Features • High density multilevel cell MLC Flash memory – Up to 16 Gbit memory array – Up to 512 Mbit spare area – Cost-effective solutions for mass storage


    Original     		PDF NAND08GW3C2B NAND16GW3C4B TSOP48 LGA52 LGA-52 ULGA52 nand 16g 16G nand flash NAND08GW3C2B NAND16GW3 NAND16GW3C4A NAND16GW3C4B

    16G nand

    Abstract: No abstract text available
    Text: NANDxxGW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage


    Original     		PDF 16-Gbit, 4224-byte 16-Gbit 16G nand

    NAND16GW3D2A

    Abstract: NAND32GW3D4A
    Text: NANDxxGW3D2A 8-Gbit, 16-Gbit, 4224-byte page, multi level cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multi level cell MLC flash memory – 8, 16 Gbits of memory array – 256, 512 Mbits of spare area – Cost-effective solutions for mass storage


    Original     		PDF 16-Gbit, 4224-byte NAND16GW3D2A NAND32GW3D4A

    Untitled

    Abstract: No abstract text available
    Text: TH58NVG4S0FTA20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 16 GBIT 2G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58NVG4S0F is a single 3.3V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks.


    Original     		PDF TH58NVG4S0FTA20 TH58NVG4S0F 4328-byte 2011-07-01C

    NAND32G

    Abstract: 32-Gbit nand32 NAND32GW3D4A JESD97 NAND16GW3D2A package tsop48 16 GBit flash
    Text: NAND32GW3D4A 32-Gbit 2 x 16 Gbits , two Chip Enable, 4224-byte page, multilevel cell, 3 V supply, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 32 Gbits of memory array – 1 Gbit of spare area


    Original     		PDF NAND32GW3D4A 32-Gbit 4224-byte NAND32G 32-Gbit nand32 NAND32GW3D4A JESD97 NAND16GW3D2A package tsop48 16 GBit flash

    TH58NVG*D

    Abstract: No abstract text available
    Text: TH58NVG4S0FBAID TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 16 GBIT 2G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58NVG4S0FBAID is a single 3.3V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks.


    Original     		PDF TH58NVG4S0FBAID TH58NVG4S0FBAID 4328-byte 2013-01-31C TH58NVG*D

    Numonyx

    Abstract: NAND01GWxA2B-KGD NAND01GW3A2B-KGD NAND01GW4A2B-KGD AI07587 NAND01G AI13144
    Text: NAND01GW3A2B-KGD NAND01GW4A2B-KGD Known Good Die, 1 Gbit x 8/x 16 , 528 Byte/264 word page, 3 V, NAND Flash memory Features • High density NAND Flash memory – 1 Gbit memory array – 32 Mbit spare area – Cost effective solutions for mass storage applications


    Original     		PDF NAND01GW3A2B-KGD NAND01GW4A2B-KGD Byte/264 Numonyx NAND01GWxA2B-KGD NAND01GW3A2B-KGD NAND01GW4A2B-KGD AI07587 NAND01G AI13144

    Untitled

    Abstract: No abstract text available
    Text: TH58NYG4S0FBAID TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 16 GBIT 2G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58NYG4S0F is a single 1.8V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks.


    Original     		PDF TH58NYG4S0FBAID TH58NYG4S0F 4328-byte 2014-03-12C

    Untitled

    Abstract: No abstract text available
    Text: TH58NVG4S0FTAK0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 16 GBIT 2G x 8 BIT CMOS NAND E PROM DESCRIPTION The TH58NVG4S0F is a single 3.3V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks.


    Original     		PDF TH58NVG4S0FTAK0 TH58NVG4S0F 4328-byte 2011-07-01C

    NAND16GW3D2A

    Abstract: numonyx MLC NAND32GW3D4A
    Text: NANDxxGW3DxA 16- or 32-Gbit, 4224-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell MLC flash memory – Up to 32 Gbits of memory array – Up to 1 Gbit of spare area – Cost-effective solutions for mass storage


    Original     		PDF 32-Gbit, 4224-byte NAND16GW3D2A numonyx MLC NAND32GW3D4A

    PC28F00AP30TF

    Abstract: PC28F00BP30EF PC28F512P30BF JS28F512P30 JS28F512 PC28F00AP30BF PC28F00AP30EF JS28F00AP30BF Numonyx P30 PC28F512P30
    Text: Numonyx Axcell™ P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: — 100ns initial access time for Easy BGA — 110ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clock-todata output synchronous-burst read mode


    Original     		PDF P30-65nm 512-Mbit, 100ns 110ns 16-word 52MHz 512-word 46MByte/s 512Mbit, PC28F00AP30TF PC28F00BP30EF PC28F512P30BF JS28F512P30 JS28F512 PC28F00AP30BF PC28F00AP30EF JS28F00AP30BF Numonyx P30 PC28F512P30

    JS28F512P33BF

    Abstract: JS28F512 pc28f00ap33 PC28F00AP33BF truth table NOT gate 74 JS28F512P33TF PC28F00AP33TF JS28F512P33EF PC28F00BP33EF JS28F00AP33BF
    Text: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read


    Original     		PDF P33-65nm 512-Mbit 105ns 16-word 52MHz 512-word 46MByte/s 512Mbit, 32-ing JS28F512P33BF JS28F512 pc28f00ap33 PC28F00AP33BF truth table NOT gate 74 JS28F512P33TF PC28F00AP33TF JS28F512P33EF PC28F00BP33EF JS28F00AP33BF

    Untitled

    Abstract: No abstract text available
    Text: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read


    Original     		PDF P33-65nm 512-Mbit 105ns 16-word 52MHz 512-word 46MByte/s 512Mbit, 32-KByte

    NUMONYX DDR

    Abstract: NAND16GW3D2B
    Text: NAND16GW3D2B 16-Gbit, 4320-byte page, 3 V supply, multiplane architecture, multilevel cell NAND flash memory Features • High density multilevel cell MLC flash memory – 16 Gbits of memory array – Cost-effective solutions for mass storage applications


    Original     		PDF NAND16GW3D2B 16-Gbit, 4320-byte NUMONYX DDR NAND16GW3D2B

    JESD97

    Abstract: NAND08GW3C2B NAND16GW3C4B 16Gbit
    Text: NAND16GW3C4B 16-Gbit 2 x 8 Gbits , two Chip Enable, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 16 Gbits of memory array – 512 Mbits of spare area


    Original     		PDF NAND16GW3C4B 16-Gbit 2112-byte JESD97 NAND08GW3C2B NAND16GW3C4B 16Gbit