Untitled
Abstract: No abstract text available
Text: MOTOROLA The RF Line MHW1815 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 32 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System 15 W 1805–1880 MHz RF POWER AMPLIFIER
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MHW1815/D
301AK
MHW1815
MHW1815/D
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VSR144
Abstract: No abstract text available
Text: VSR144 Vishay Foil Resistors Bulk Metal Foil Technology Industrial Grade Miniature Voltage Divider FEATURES • Temperature Coefficient of Resistance: Nominal TCR: ± 4ppm/°C 0° to 60°C Product is pictured larger than actual size to show detail • TCR Tracking: 1.5ppm/°C
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VSR144
10ppm)
VSR144
1K/10K
182mW
15-May-01
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SM73228XG1JHBGO
Abstract: 80 pin simm flash programmer FF000000 hyperterminal MSC8101ADS LH28F016SCT-L95 MSC8101 SC100 SC140
Text: Freescale Semiconductor, Inc. Application Note AN2157/D Rev. 3, 05/2002 Freescale Semiconductor, Inc. Programming the MSC8101ADS Flash Memory Donald Simon and Duberly Mazuelos CONTENTS 1 2 3 4 References . 1 Background . 2
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AN2157/D
MSC8101ADS
SM73228XG1JHBGO
80 pin simm flash programmer
FF000000
hyperterminal
LH28F016SCT-L95
MSC8101
SC100
SC140
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Untitled
Abstract: No abstract text available
Text: VSM42, 45, 46 Vishay Foil Resistors SURFACE MOUNT Bulk Metal Foil Technology Surface Mount Hermetic Resistor Networks in Gull Wing Configuration Vishay Model VSM networks incorporate all the performance features of Vishay Bulk Metal® Foil technology in a product
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VSM42,
VSM45
VSM46
15-May-01
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Untitled
Abstract: No abstract text available
Text: M58LW064A M58LW064B 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY • WIDE x16/x32 DATA BUS for HIGH BANDWIDTH Figure 1. Packages – M58LW064A x16 DATA BITS – M58LW064B x16/x32 DATA BITS ■ SUPPLY VOLTAGE
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M58LW064A
M58LW064B
x16/x32
M58LW064B
TSOP56
TBGA64
66MHz
120/25ns,
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M58LV064A
Abstract: M58LV064B TSOP56 TBGA64
Text: M58LV064A M58LV064B 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY • WIDE DATA BUS for HIGH BANDWIDTH Figure 1. Packages – M58LV064A: x16 – M58LV064B: x16/x32 ■ SUPPLY VOLTAGE – VDD = 3.0 to 3.6V M58LV064 core supply
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M58LV064A
M58LV064B
M58LV064A:
M58LV064B:
x16/x32
M58LV064
TSOP56
TBGA64
66MHz
150/25ns
M58LV064A
M58LV064B
TSOP56
TBGA64
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SM73228XG1JHBGO
Abstract: LH28F016SCT-L95 MSC8101 MSC8101ADS SC100 SC140 80 pin simm flash programmer 0xFF840000-0xFF87FFFF LH28F016SCT-L
Text: Application Note AN2157/D Rev. 3, 05/2002 Programming the MSC8101ADS Flash Memory Donald Simon and Duberly Mazuelos CONTENTS 1 2 3 4 References . 1 Background . 2 Flash Memory . 2 Generating an S-record
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AN2157/D
MSC8101ADS
SM73228XG1JHBGO
LH28F016SCT-L95
MSC8101
SC100
SC140
80 pin simm flash programmer
0xFF840000-0xFF87FFFF
LH28F016SCT-L
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Untitled
Abstract: No abstract text available
Text: MOTOROLA The RF Line MHW1915 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 31 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System 15 W 1930–1990 MHz RF POWER AMPLIFIER
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MHW1915/D
301AK
MHW1915
MHW1915/D
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Untitled
Abstract: No abstract text available
Text: M58LV064A, M58LV064B 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY • WIDE DATA BUS for HIGH BANDWIDTH Figure 1. Packages – M58LV064A: x16 – M58LV064B: x16/x32 ■ SUPPLY VOLTAGE – VDD = 3.0 to 3.6V M58LV064 core supply
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M58LV064A,
M58LV064B
M58LV064A:
M58LV064B:
x16/x32
M58LV064
TSOP56
66MHz
150/25ns
150ns
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M58LV064A
Abstract: M58LV064B M58LW064 M58LW064A M58LW064B TSOP56
Text: M58LW064A, M58LW064B M58LV064A, M58LV064B 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY • WIDE DATA BUS for HIGH BANDWIDTH Figure 1. Packages – M58LW064/M58LV064A: x16 – M58LW064/M58LV064B: x16/x32
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M58LW064A,
M58LW064B
M58LV064A,
M58LV064B
M58LW064/M58LV064A:
M58LW064/M58LV064B:
x16/x32
M58LW064
M58LV064
TSOP56
M58LV064A
M58LV064B
M58LW064A
M58LW064B
TSOP56
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K6X8008T2B-UF55
Abstract: m48t35 HY628100BLLT1-55 BR1632 SRAM 4T cell M48T59 m48z32 MK48T12 AN1012 BR1632 safety
Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs and Serial RTCs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,
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AN1012
K6X8008T2B-UF55
m48t35
HY628100BLLT1-55
BR1632
SRAM 4T cell
M48T59
m48z32
MK48T12
AN1012
BR1632 safety
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Untitled
Abstract: No abstract text available
Text: M58LV064A M58LV064B 64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY WIDE DATA BUS for HIGH BANDWIDTH Figure 1. Packages – M58LV064A: x16 – M58LV064B: x16/x32 SUPPLY VOLTAGE – VDD = 3.0 to 3.6V M58LV064 core supply
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M58LV064A
M58LV064B
M58LV064A:
M58LV064B:
x16/x32
M58LV064
66MHz
150/25ns
150ns
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MHL9128
Abstract: No abstract text available
Text: MOTOROLA MHL9128 The RF Line UHF Linear Amplifier LIFETIME BUY Designed specifically for linear amplifier applications in the cellular frequency band. Internal DC blocking on RF ports reduces external component count and related circuit area. This device can be easily combined for higher power
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MHL9128
MHL9128/D
MHL9128
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS CBT3245 Octal bus switch Product specification Supersedes data of 1998 Dec 8 Philips Semiconductors 2000 Jun 19 Philips Semiconductors Product specification Octal bus switch CBT3245 FEATURES DESCRIPTION • Standard ’245-type pinout • 5 Ω switch connection between two ports
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CBT3245
CBT3245
245-type
20Semiconductors
20CBT3245;
20Octal
20bus
20switch
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DR314
Abstract: 1494V
Text: 4 DRAWING THIS MADE IN THIRD DRAWI NG 0 ANGLE IS UNPUBLISHED. COPYRIGHT 19 2 3 PROJECTION RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL LOC ,19 RIGHTS D I ST Ah RESERVED. 50 REV I 5 I ONS P F ZONE LTR DESCR I P T I O N c TAB D .522 TOTAL
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0G3A-0298-01
15MAY01
09-JUN-95
/ws/dept2125/dwq2125/u
DR314
1494V
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Untitled
Abstract: No abstract text available
Text: 4 T H IS CO P YR IG H T 20 2 3 DRAW ING IS U N PU B LISH E D , RELEASED B Y T Y C D E L E C T R O N IC S CD RPDRATIDN . FD R P U B LIC A T IO N 20 LIHC A L L RIG H TS R E S E R V E D , D IST REVISIONS E LTR D E S C R IP T IO N B1 D DIM D ATE DWN EBOO—017 0—01
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ECR-06-022054
14SEPD6
ECR-08-021872
15MAY01
26AUG08
RG58C/U
21DEC2000
AR2000
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Untitled
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. LOC DIST CM 53 R E V IS IO N S LTR B1 DESCRIPTION DATE DWN BSV GSR 0 7 JU L06 ECO—0 6 —013672 TM 1. MATES WITH APPROPRIATE UNIVERSAL M ATE-N-LO K
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31MAR2000
07JUL06
15MAY01
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. C O R Y R I G HT 2001 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL 2001 PUBLICATION RIGHTS LOC RESERVED. REV I S I O N S D I ST A LTR DESCRIPTION DWN DATE E1 E G 0 0 - 2 6 9 5 - 0 1 290CT01 E2 E G 0 0 - 3 6 A 7 - 0 1 10DEC01
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290CT01
10DEC01
28JAN02
EGA0-0853-04
37APR04
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