2.54mm Header 3 Pin
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C
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UL94-V0
12-JUL-10
08-JUL-10
23-NOV-07
07-DEC-06
29-MAR-04
15-MAR-04
03-MAY-99
6130xx
2.54mm Header 3 Pin
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SST201
Abstract: SST204 J/SST202 J201 J202 J204 SST202
Text: J/SST201 Series Vishay Siliconix N-Channel JFETs J201 J202 J204 SST201 SST202 SST204 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J/SST201 −0.3 to −1.5 −40 0.5 0.2 J/SST202 −0.8 to −4 −40 1 0.9 J/SST204 −0.3 to −2
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J/SST201
SST201
SST202
SST204
J/SST201
J/SST202
J/SST204
S-40393--Rev.
15-Mar-04
SST201
SST204
J/SST202
J201
J202
J204
SST202
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40431
Abstract: Si7970DP
Text: Si7970DP Vishay Siliconix New Product Dual N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 rDS(on) (W) ID (A) 0.019 @ VGS = 10 V 10.2 0.026 @ VGS = 4.5 V 8.7 D D D D TrenchFETr Power MOSFET New Low Thermal Resistance PowerPAKr Dual MOSFET for Space Savings
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Si7970DP
Si7970DP-T1--E3
S-40431--Rev.
15-Mar-04
40431
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J/SST202
Abstract: SST201 SST204 J201 equivalent J201 J202 J204 SST202 SOT-23 2.D
Text: J/SST201 Series Vishay Siliconix N-Channel JFETs J201 J202 J204 SST201 SST202 SST204 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J/SST201 −0.3 to −1.5 −40 0.5 0.2 J/SST202 −0.8 to −4 −40 1 0.9 J/SST204 −0.3 to −2
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J/SST201
SST201
SST202
SST204
J/SST201
J/SST202
J/SST204
18-Jul-08
J/SST202
SST201
SST204
J201 equivalent
J201
J202
J204
SST202
SOT-23 2.D
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40373
Abstract: TO-205AD material TO-205AD
Text: Package Information Vishay Siliconix TO-205AD TO-39 TALL LID CD INCHES P Q Dim CD CH HD LC LD LL LU L1 L2 P Q r TL TW m CH L1 LU L2 LL Seating Plane MILLIMETERS Min Max Min Max 0.305 0.335 7.75 8.51 0.240 0.260 6.10 6.60 0.335 0.370 8.51 0.200 TP Notes 9.40
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O-205AD
09-Mar-04
40373
TO-205AD material
TO-205AD
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Siliconix JFETs Dual
Abstract: SST421NL SST423NL U421 U423 423NL 421nl 421n
Text: SST421NL/423NL Vishay Siliconix Monolithic N-Channel JFET Duals PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) jVGS1 − VGS2j Max (mV) SST421NL −0.4 to−2 −40 0.3 10 SST423NL −0.4 to −2 −40 0.3 25 FEATURES D D D D D D D
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SST421NL/423NL
SST421NL
SST423NL
S-40391--Rev.
15-Mar-04
Siliconix JFETs Dual
SST421NL
SST423NL
U421
U423
423NL
421nl
421n
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Si3441BDV
Abstract: Si3441BDV-T1
Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.090 @ VGS = −4.5 V −2.9 0.130 @ VGS = −2.5 V −2.45 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3441BDV-T1
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Si3441BDV
Si3441BDV-T1
Si3441BDV-T1--E3
S-40424--Rev.
15-Mar-04
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Si6963BDQ
Abstract: 7277-2
Text: Si6963BDQ Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 20 rDS(on) (W) ID (A) 0.045 @ VGS = −4.5 V −3.9 0.080 @ VGS = −2.5 V −3.0 S1 S2 TSSOP-8 D1 1 S1 2 S1 3 G1 4 D Si6963BDQ G1 8 D2 7 S2 G2 6 S2 5 G2
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Si6963BDQ
Si6963BDQ-T1--E3
S-40439--Rev.
15-Mar-04
7277-2
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40410
Abstract: 40410 datasheet Si3465DV MARKING code 5C
Text: Si3465DV Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.080 @ VGS = −10 V −4.0 0.170 @ VGS = −4.5 V −2.7 APPLICATIONS D Load Switch − Notebook PC − Game Machine
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Si3465DV
Si3465DV-T1--E3
S-40410--Rev.
15-Mar-04
40410
40410 datasheet
MARKING code 5C
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SUD50N03-16P
Abstract: No abstract text available
Text: SUD50N03-16P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 15 0.024 @ VGS = 4.5 V 12 VDS (V) 30 D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D TO-252 Drain Connected to Tab
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SUD50N03-16P
O-252
SUD50N03-16P--E3
S-40466--Rev.
15-Mar-04
SUD50N03-16P
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS PCB LAYOUT - COMPONENT VIEW A MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C
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UL94-V0
12-JUL-10
08-JU
08-JUL-10
23-NOV-07
07-DEC-06
29-MAR-04
15-MAR-04
08-APR-13
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Si3447BDV
Abstract: 1600 v mosfet ultra low igss pA Si3447BDV-T1
Text: Si3447BDV Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −12 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.0 0.053 @ VGS = −2.5 V −5.2 0.072 @ VGS = −1.8 V −4.5 D TrenchFETr Power MOSFET: 1.8-V Rated D Ultra Low On-Resistance
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Si3447BDV
Si3447BDV-T1
Si3447BDV-T1--E3
08-Apr-05
1600 v mosfet
ultra low igss pA
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CR430
Abstract: 40250 Transistor CR330 S-40250-Rev CR160 CR180 CR200 CR220 CR240 CR270
Text: CR160 Series Vishay Siliconix Current Regulator Diodes CR160 CR220 CR300 CR390 CR180 CR240 CR330 CR430 CR200 CR270 CR360 CR470 PRODUCT SUMMARY Part Number Typ IF mA Min POV (V) Part Number Typ IF (mA) Min POV (V) CR160 1.60 100 CR300 3.00 100 CR180 1.80
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CR160
CR160
CR220
CR300
CR390
CR180
CR240
CR330
CR430
CR200
CR430
40250 Transistor
CR330
S-40250-Rev
CR180
CR200
CR220
CR240
CR270
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SI4463BDY
Abstract: No abstract text available
Text: Si4463BDY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.011 @ VGS = −10 V −13.7 0.014 @ VGS = −4.5 V −12.3 0.020 @ VGS = −2.5 V −10.3 −20 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View
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Si4463BDY
Si4463BDY--E3
Si4463BDY-T1--E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SUM110N04-04 Vishay Siliconix N-Channel 40-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.0035 @ VGS = 10 V 110 a D TrenchFETr Power MOSFET D 175_C Junction Temperature APPLICATIONS D D Automotive − ABS − 12-V EPS − Motor Drivers
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SUM110N04-04
O-263
SUM110N04-04
SUM110N04-04--E3
TCMar-04
S-40475--Rev.
15-Mar-04
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Untitled
Abstract: No abstract text available
Text: SUD70N03-06P Vishay Siliconix New Product N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.006 @ VGS = 10 V 70 APPLICATIONS 0.009 @ VGS = 4.5 V 70 D DC/DC Converters − Optimized For Low Side D Synchronous Rectifiers VDS (V)
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SUD70N03-06P
O-252
SUD70N03-06P
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si4384DY Vishay Siliconix New Product N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Gen II Power MOSFETS D PWM Optimized D 100% Rg Tested PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0085 @ VGS = 10 V 15 0.0125 @ VGS = 4.5 V 12 APPLICATIONS
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Si4384DY
Si4384DY--E3
Si4384DY-T1--E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si7120DN Vishay Siliconix New Product N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 60 D TrenchFETr Power MOSFET D New Low Thermal Resistance D PowerPAKr 1212-8 Package with Low 1.07-mm Profile D 100% Rg Tested ID (A) 0.019 @ VGS = 10 V
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Si7120DN
07-mm
Si7120DN-T1
S-40425â
15-Mar-04
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SIL6029
Abstract: POWER INTEGRATIONS dual flyback converter SCD-0403-100MT vogt transformer vogt 408 15 keihin schematic diagram dc-dc flyback converter VOGT T1 switching transformer 28/erl 35 2005 transformer CAT431L
Text: Title Engineering Prototype Report for EP-68 – 6.6 W DC-DC Flyback Converter Using DPA-Switch DPA423G Specification Input: 36-57 VDC, Output: 3.3 V / 2 A Application Power over Ethernet (PoE) Power Supply Author Power Integrations Applications Department
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EP-68
DPA423G)
EPR-68
19-Jul-2005
Thermal89
SIL6029
POWER INTEGRATIONS dual flyback converter
SCD-0403-100MT
vogt transformer
vogt 408 15
keihin
schematic diagram dc-dc flyback converter
VOGT T1 switching transformer
28/erl 35 2005 transformer
CAT431L
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SUD50N03-16P
Abstract: No abstract text available
Text: SUD50N03-16P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.016 @ VGS = 10 V 15 0.024 @ VGS = 4.5 V 12 VDS (V) 30 D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D TO-252 Drain Connected to Tab
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SUD50N03-16P
O-252
SUD50N03-16P--E3
08-Apr-05
SUD50N03-16P
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JC EC
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C
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UL94-V0
23-AVR-09
23-NOV-07
01-DEC-06
29-MAR-04
15-MAR-04
03-MAY-99
JC EC
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40393
Abstract: SST201 SST202 2N433 J201 J202 J204 SST204 to236 2n4338
Text: J/SST201 Series Vishay Siliconix N-Channel JFETs J201 J202 J204 SST201 SST202 SST204 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J/SST201 −0.3 to −1.5 −40 0.5 0.2 J/SST202 −0.8 to −4 −40 1 0.9 J/SST204 −0.3 to −2
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J/SST201
SST201
SST202
SST204
J/SST201
J/SST202
J/SST204
08-Apr-05
40393
SST201
SST202
2N433
J201
J202
J204
SST204
to236 2n4338
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Si4463BDY-E3
Abstract: Si4463BDY
Text: Si4463BDY Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.011 @ VGS = −10 V −13.7 0.014 @ VGS = −4.5 V −12.3 0.020 @ VGS = −2.5 V −10.3 −20 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View
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Si4463BDY
Si4463BDY--E3
Si4463BDY-T1--E3
S-40433--Rev.
15-Mar-04
Si4463BDY-E3
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ci 741
Abstract: C2091 L1278 u 741 l1141 L3241
Text: DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWINC IS UNPUBLISHED. RELEASED FOR =UB_ICATION ,19 COPYR.GHT ,9 Br AMP INCORPORATED. ALL INTERNATIONAL RIOETE RESERVED. ICCC luibl I DW I UU /l\ HOUSING S C L O P , UU TIN E ^DA~E - L IQ U ID 9 4 V-0 , BLACK.
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15MAR04
ci 741
C2091
L1278
u 741
l1141
L3241
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