Si4702DY-T1
Abstract: Si4702DY S-31874 BUS34 25C312
Text: Si4702DY Vishay Siliconix Load Switch with Level-Shift PRODUCT SUMMARY VDS2 V 30 rDS(on) (W) ID (A) 0.024 @ VGS2 = 10 V 5.5 0.035 @ VGS2 = 4.5 V 4.5 5, 6, 7 3, 4 VIN SO-8 S1 1 8 VHV VON/OFF 2 7 VIN S2 3 6 VIN S2 4 5 VIN VHV VON/OFF S2 Q2 8 Q1 2 1 Top View
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Si4702DY
Si4702DY-T1
18-Jul-08
S-31874
BUS34
25C312
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Si4340DY
Abstract: Si4340DY-T1
Text: Si4340DY Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel 1 Channel-1 20 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.012 @ VGS = 10 V 9.6 0.0175 @ VGS = 4.5 V 7.8 0.010 @ VGS = 10 V 13.5 0.0115 @ VGS = 4.5 V
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Si4340DY
SO-14
S-31857--Rev.
15-Sep-03
Si4340DY-T1
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Si6913DQ
Abstract: Si6913DQ-T1 58A5
Text: Si6913DQ Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.021 @ VGS = -4.5 V -5.8 0.028 @ VGS = -2.5 V -5.0 0.037 @ VGS = -1.8 V -4.4 APPLICATIONS D Load Switch
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Si6913DQ
Si6913DQ-T1
08-Apr-05
58A5
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Untitled
Abstract: No abstract text available
Text: TFDU4300 VISHAY Vishay Semiconductors Infrared Transceiver Module SIR, 115.2 kbit/s for IrDA applications Description The TFDU4300 transceiver is an infrared transceiver module compliant to the latest IrDA physical layer standard for fast infrared data communication, supporting IrDA speeds up to 115.2 kbit/s (SIR) and carrier based remote control. The transceiver module
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TFDU4300
TFDU4300
D-74025
15-Sep-03
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3191-4
Abstract: Si6913DQ Si6913DQ-T1
Text: Si6913DQ Vishay Siliconix New Product Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -12 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.021 @ VGS = -4.5 V -5.8 0.028 @ VGS = -2.5 V -5.0 0.037 @ VGS = -1.8 V -4.4 APPLICATIONS D Load Switch
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Si6913DQ
Si6913DQ-T1
S-31914--Rev.
15-Sep-03
3191-4
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SUM60N04-05T
Abstract: D2Pak-5
Text: SUM60N04-05T Vishay Siliconix New Product N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.0054 @ VGS = 10 V 60a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature
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SUM60N04-05T
08-Apr-05
SUM60N04-05T
D2Pak-5
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Untitled
Abstract: No abstract text available
Text: SUU50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters
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SUU50N03-09P
O-251
S-31871--Rev.
15-Sep-03
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Untitled
Abstract: No abstract text available
Text: SUU50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters D Synchronous Rectifiers
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SUU50N03-09P
O-251
S-31871--Rev.
15-Sep-03
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Untitled
Abstract: No abstract text available
Text: Si7425DN Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.016 @ VGS = - 4.5 V - 12.6 0.022 @ VGS = - 2.5 V - 10.8 0.029 @ VGS = - 1.8 V - 3.5 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPAKr Package
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Si7425DN
07-mm
Si7425DN-T1
S-31917--Rev.
15-Sep-03
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Untitled
Abstract: No abstract text available
Text: Si4336DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.00325 @ VGS = 10 V 25 0.0042 @ VGS = 4.5 V 22 D Ultra Low On-Resistance Using High Density TrenchFETr Gen II Power MOSFET Technology
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Si4336DY
Si4336DY-T1
S-31858--Rev.
15-Sep-03
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Untitled
Abstract: No abstract text available
Text: Si2306DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.057 @ VGS = 10 V 3.5 0.094 @ VGS = 4.5 V 2.8 D TrenchFETr Power MOSFET D 100% Rg Tested - TO-236 (SOT-23) G 1 3 S D 2 Top View Si2306DS (A6)* *Marking Code
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Si2306DS
O-236
OT-23)
Si2306DS-T1
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SUU50N03-12P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.012 @ VGS = 10 V 17.5 0.0175 @ VGS = 4.5 V 14.5 VDS (V) 30 D TrenchFETr Power MOSFET APPLICATIONS D DC/DC Converters D Synchronous Rectifiers
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SUU50N03-12P
O-251
S-31872--Rev.
15-Sep-03
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photodyne 17xtf
Abstract: 3M Photodyne 17XTF 3M 17xtf rifocs 671r E8025-0633 3M photodyne fibre optic test meter RIFOCS photodyne 11 photodyne
Text: 502-1170 Engineering Report 10Dec04 Rev O EC 0990-1630-04 2.5 mm Connector Adapters 1. INTRODUCTION 1.1. Purpose The purpose of this test was to determine the conformance of 2.5 mm connector adapters, listed in paragraph 1.4., to the requirements stated within this document.
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10Dec04
15Sep03
09Oct03.
photodyne 17xtf
3M Photodyne
17XTF
3M 17xtf
rifocs 671r
E8025-0633
3M photodyne fibre optic test meter
RIFOCS
photodyne 11
photodyne
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WF MB 101
Abstract: WF MB 102
Text: Class 2 X7R 10/16/25/50/100 V Vishay BCcomponents Surface Mount Multilayer Chip Capacitors FEATURES ∑ ∑ ∑ ∑ ∑ Stable class 2 dielectric Four standard sizes High capacitance per unit volume Supplied in tape on reel For high frequency applications
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time1000
15-Sep-03
WF MB 101
WF MB 102
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Untitled
Abstract: No abstract text available
Text: RS1A thru RS1K Vishay Semiconductors formerly General Semiconductor Surface Mount Fast Switching Rectifier DO-214AC SMA Reverse Voltage 50 to 800V Forward Current 1.0A Cathode Band 0.065 (1.65) Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) 0.066 MIN.
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DO-214AC
50mVp-p
15-Sep-03
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6188B
Abstract: No abstract text available
Text: SUD50N06-16 Vishay Siliconix New Product N-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 60 0.016 @ VGS = 10 V D TrenchFETr Power MOSFET ID (A)c APPLICATIONS D TO-252 Drain Connected to Tab G D D Automotive - ABS - EPS - Motor Drives
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SUD50N06-16
O-252
SUD50N06-16
08-Apr-05
6188B
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Untitled
Abstract: No abstract text available
Text: SUD50N06-12 Vishay Siliconix New Product N-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 60 0.012 @ VGS = 10 V ID (A)c D TrenchFETr Power MOSFET D 175 _C Junction Temperature 63 APPLICATIONS D Automotive and Industrial D TO-252
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SUD50N06-12
O-252
SUD50N06-12
08-Apr-05
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M40SZ100W
Abstract: M40SZ100Y M4ZXX-BR00SH SOH28 SOIC16 SOIC28
Text: M40SZ100Y M40SZ100W 5V or 3V NVRAM SUPERVISOR FOR LPSRAM FEATURES SUMMARY • CONVERT LOW POWER SRAMs INTO NVRAMs ■ 5V OR 3V OPERATING VOLTAGE ■ PRECISION POWER MONITORING and POWER SWITCHING CIRCUITRY ■ AUTOMATIC WRITE-PROTECTION WHEN VCC IS OUT-OF-TOLERANCE
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M40SZ100Y
M40SZ100W
16-pin
M40SZ100Y:
M40SZ100W:
28LEAD
28-pin
M40SZ100W
M40SZ100Y
M4ZXX-BR00SH
SOH28
SOIC16
SOIC28
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Untitled
Abstract: No abstract text available
Text: SUD50N02-09P Vishay Siliconix N-Channel 20-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0095 @ VGS = 10 V 20 APPLICATIONS 0.017 @ VGS = 4.5 V 15 D High-Side Synchronous Buck DC/DC Conversion - Desktop - Server VDS (V) 20 D TrenchFETr Power MOSFET
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SUD50N02-09P
O-252
SUD50N02-09P
S-31876--Rev.
15-Sep-03
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si3440
Abstract: No abstract text available
Text: Si3440DV Vishay Siliconix New Product N-Channel 150-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D PWM Optimized for Fast Switching In Small Footprint D 100% Rg Tested PRODUCT SUMMARY VDS (V) 150 rDS(on) (W) ID (A) 0.375 @ VGS = 10 V 1.5 0.400 @ VGS = 6.0 V
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Si3440DV
Si3440DV-T1
S-31919--Rev.
15-Sep-03
si3440
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GS 069 pwm
Abstract: No abstract text available
Text: Si7922DN Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.195 @ VGS = 10 V 2.5 0.230 @ VGS = 6 V 2.3 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package, 1/3 the Space of An SO-8 While
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Si7922DN
Si7922DN-T1
S-31864--Rev.
15-Sep-03
GS 069 pwm
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Untitled
Abstract: No abstract text available
Text: r n F CONNECTOR ASSEMBLY EXAMPLARY LOADED A 15SEP03 BC GS REV PER EC OS12-0402-03 CONTACT DIMENSIONS CONTACT d A CONTACT AREA ACTION PIN — AREA A, c c c c c A -CONTACT AREA c LAYOUT e f g h A A A A A A A A c A A A A A A A A c A A A A A A A A C A A A A A A A A C
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBUSHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AF Dl ST REVISIONS 50 LTR DESCRIPTION DATE REV PER 0G 3A— 0361 — 03 DWN APVD MF PD 15SEP03 D D 7 .6 2 L-T+s C C 1 iB /2 \ P f CONTINUOUS
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15SEP03
31MAR2000
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219413-2
Abstract: PR04 CAT-5E PVC awg 24 PR04 CAT-5E PVC AMP Netconnect awg24 pr04 TE 901 colour code 7035 11801 ftp cat5e SH PVC 219413-8 ral 9010
Text: 2 THIS DRAWING IS COPYRIGHT F IN I S H E D UNPUBLISHED. 2003 CABLE RELEASED BY R 1P C O R D JACKET C CABLE 0.51 LOC REV I S I ONS 2 LTR P L A T 1 NG BARE ELONGATION 1 5% WI R E 24 AWG DIAMETER NOM. XXXXX AWG HD608 COPPER P L A T 1 NG T I NNED ELONGATION 1 5Z
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HD608
28AUG03
152-298m
24AWG
31MAR2Ã
219413-2
PR04 CAT-5E PVC
awg 24 PR04 CAT-5E PVC
AMP Netconnect awg24 pr04
TE 901
colour code 7035
11801 ftp cat5e
SH PVC
219413-8
ral 9010
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