1550nm photo diode for 10Gbps
Abstract: No abstract text available
Text: Obsolete Product – not recommended for new design MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400X series of photo diodes are currently offered in die form allowing manufacturers the
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MXP4005
1310nm
1550nm
MXP400X
1550nm
1430nm
1550nm photo diode for 10Gbps
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Untitled
Abstract: No abstract text available
Text: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4001
MXP4000
MXP400X
00E-11
MXP4000
00E-12
MXP4002
MXP4003
00E-13
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construction of photo diode
Abstract: MXP4000 MXP4001 MXP4002 MXP4003 IR PHOTO DIODE amplifier 1550nm 10mW photo diode
Text: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4001
MXP4000
MXP400X
00E-11
MXP4000
00E-12
MXP4002
MXP4003
00E-13
construction of photo diode
MXP4001
MXP4002
MXP4003
IR PHOTO DIODE amplifier
1550nm 10mW photo diode
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1550nm photo diode for 10Gbps
Abstract: construction of photo diode MXP4005 1550nm catv receiver MXP4003 IR PHOTO DIODE amplifier 1550nm optical device 1550nm 10mW photo diode
Text: MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400X series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
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MXP4005
MXP400X
12GHz
1310nm
1550nm
1550nm
1430nm
1550nm photo diode for 10Gbps
construction of photo diode
MXP4005
1550nm catv receiver
MXP4003
IR PHOTO DIODE amplifier
1550nm optical device
1550nm 10mW photo diode
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photo diode
Abstract: MXP4003 photo diode 10 Gbps pin photo diode MXP4000 sdh microsemi photo diode pin 10 Gbps "Photo Diode" construction of photo diode 1550nm 10mW photo diode
Text: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
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MXP4003
MXP4000
1310nm
1550nm
MXP4003
photo diode
photo diode 10 Gbps
pin photo diode
sdh microsemi
photo diode pin 10 Gbps
"Photo Diode"
construction of photo diode
1550nm 10mW photo diode
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1550nm photo diode for 10Gbps
Abstract: MXP4003 MXP4005
Text: MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. . The MXP400X series of photo diodes are currently offered in die
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MXP4005
MXP400X
12GHz
1550nm
508um
1430nm
1550nm
1550nm photo diode for 10Gbps
MXP4003
MXP4005
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25um
Abstract: No abstract text available
Text: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. The MXP4000 series of photo diodes
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MXP4003
1310nm
1550nm
MXP4000
1550nm
1430nm
MXP4003
25um
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1550nm catv receiver
Abstract: MXP4000 MXP4001 MXP4002 MXP4003 1430nm
Text: MXP4003 – 12.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4003
MXP4000
PI714-893-2570
MXP400X
00E-11
MXP4000
MXP4001
00E-12
MXP4002
1550nm catv receiver
MXP4001
MXP4002
MXP4003
1430nm
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construction of photo diode
Abstract: MXP4000 MXP4001 MXP4002 MXP4003 PHOTO diode
Text: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400x series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
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MXP4001
MXP400x
1310nm
1550nm
00E-11
MXP4000
00E-12
construction of photo diode
MXP4000
MXP4001
MXP4002
MXP4003
PHOTO diode
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Untitled
Abstract: No abstract text available
Text: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. The MXP4000 series of photo diodes
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MXP4003
MXP4000
1430nm
1550nm
MXP4003
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Untitled
Abstract: No abstract text available
Text: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The MXP4000 large active area and low dark current make it ideal for laser diode power monitoring applications. The device series offers superior noise
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MXP4000
1310nm
1550nm
MXP4000
MXP400x
00E-11
00E-12
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ED 08 diode
Abstract: ED 03 Diode
Text: Obsolete Product – not recommended for new design MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the
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MXP4003
1310nm
1550nm
dev61
MXP4003
ED 08 diode
ED 03 Diode
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MXP4000
Abstract: MXP4001 MXP4002 MXP4003 laser diode 10mw 1550nm construction of photo diode MXP400X
Text: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400x series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
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MXP4000
MXP400x
1310nm
1550nm
MXP4001
00E-12
MXP4002
MXP4000
MXP4001
MXP4002
MXP4003
laser diode 10mw 1550nm
construction of photo diode
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diode ed 85
Abstract: DIODE ED 11 1430nm ED 08 diode
Text: Obsolete Product – not recommended for new design MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DAT A SHEET KEY FEATURES DESCRIPTION High Responsivity Large Active Area Low Dark Current Custom Sub-mounts or TO package
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MXP4000
508um
1310nm
1550nm
MXP400X
00E-11
MXP4000
MXP4001
MXP4002
diode ed 85
DIODE ED 11
1430nm
ED 08 diode
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DIODE ED
Abstract: DIODE ED 11 ED 08 diode
Text: Obsolete Product – not recommended for new design MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DAT A SHEET KEY FEATURES DESCRIPTION High Responsivity Extremely Low Dark Current Extremely Low Capacitance
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MXP4001
508um
1310nm
1550nm
MXP400X
00E-11
MXP4000
MXP4001
MXP4002
DIODE ED
DIODE ED 11
ED 08 diode
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650nm laser diode 200mw
Abstract: FU-456RDF laser diode DVD 300mw FU-357RPP laser FP TO-CAN for SFP SIRIO FU-357RPA laser DFB 1550nm 10mW PD8XX10 ML7XX46
Text: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650nm to 1600nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 350mW Application Map 1 Technology Trend 3 Laser Diode for Information
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350mW
650nm
1600nm
H-CR606-G
KI-0608
650nm laser diode 200mw
FU-456RDF
laser diode DVD 300mw
FU-357RPP
laser FP TO-CAN for SFP
SIRIO
FU-357RPA
laser DFB 1550nm 10mW
PD8XX10
ML7XX46
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FU-456RDF
Abstract: ML9XX46 laser diode DVD 300mw FU-357RPA 650nm laser diode 200mw ML7XX46 APD 10gbps 1550nm Laser Diode with butterfly pin package sirio FU-68SDF-V3M series
Text: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650nm to 1600nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 350mW Application Map 1 Technology Trend 3 Laser Diode for Information
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350mW
650nm
1600nm
H-CT606-J
KI-0807
FU-456RDF
ML9XX46
laser diode DVD 300mw
FU-357RPA
650nm laser diode 200mw
ML7XX46
APD 10gbps
1550nm Laser Diode with butterfly pin package
sirio
FU-68SDF-V3M series
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Untitled
Abstract: No abstract text available
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
MXP4000
MXP400X
00E-11
MXP4000
MXP4001
00E-12
MXP4003
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MXP4002
Abstract: PHOTO diode
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
1310nm
1550nm
MXP4000
1550nm
MXP4002
PHOTO diode
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PIN PHOTO DIODE
Abstract: "Photo Diode" photo diode construction of photo diode MXP4002 IR PHOTO DIODE amplifier MXP4000
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
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MXP4002
MXP4000
1310nm
1550nm
MXP4002
PIN PHOTO DIODE
"Photo Diode"
photo diode
construction of photo diode
IR PHOTO DIODE amplifier
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Untitled
Abstract: No abstract text available
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
MXP4000
1550nm
MXP4002
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construction of photo diode
Abstract: MXP4001 MXP4003 MXP4000 MXP4002 PHOTO diode
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
MXP4000
MXP400X
00E-11
MXP4000
MXP4001
00E-12
MXP4003
construction of photo diode
MXP4001
MXP4003
MXP4002
PHOTO diode
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Untitled
Abstract: No abstract text available
Text: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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MXP4002
MXP4000
p50nm
MXP4002
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DIODE ED 16
Abstract: ED 08 diode
Text: Obsolete Product – not recommended for new design MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DAT A SHEET KEY FEATURES DESCRIPTION High Responsivity Low Dark Current Extremely Low Capacitance High Bandwidth
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MXP4002
1310nm
1550nm
MXP4002
DIODE ED 16
ED 08 diode
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