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    151GD12E4S Price and Stock

    SEMIKRON SEMIX151GD12E4S

    Igbt Module, Six, 1.2Kv, 232A; Continuous Collector Current:232A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SEMIX151GD12E4S
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SEMIX151GD12E4S Bulk 4
    • 1 $192.53
    • 10 $187.15
    • 100 $176.38
    • 1000 $176.38
    • 10000 $176.38
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    South Electronics SEMIX151GD12E4S
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    SEMIKRON SEMIX151GD12E4S 27890200

    Module: IGBT; transistor/transistor; IGBT three-phase bridge
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SEMIX151GD12E4S 27890200 1
    • 1 $452.63
    • 10 $452.63
    • 100 $452.63
    • 1000 $452.63
    • 10000 $452.63
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    151GD12E4S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    151GD12E4S

    Abstract: semikron SKS B6CI SKs 83 SKS 83F
    Text: SKS 83F B6CI 58 V12 Characteristics Symbol Conditions min. typ. max. Unit 83 A 66 A 50 A 1200 V Electrical Data Irms Tamb = 40 °C fsw = 5 kHz Vac = 500 V Vdc = 750 V cos = 0.85 no overload 150% overload, 60s every 10min 200% overload, 10s every 10min VCES


    Original     		PDF 10min 10min 151GD12E4s 151GD12E4S semikron SKS B6CI SKs 83 SKS 83F

    semikron sks 85f

    Abstract: capacitor semikron semikron SKS 151GD12E4S
    Text: SKS 85F B6CI+B6U 59 V12 Characteristics Symbol Conditions min. typ. max. Unit 85 A 60 A 50 A 1200 V Electrical Data Irms Tamb = 40 °C fsw = 5 kHz Vac = 500 V Vdc = 750 V cos = 0.85 no overload 150% overload, 60s every 10min 200% overload, 10s every 10min


    Original     		PDF 10min 10min 151GD12E4s semikron sks 85f capacitor semikron semikron SKS 151GD12E4S

    453gb12e4s

    Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
    Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1


    Original     		PDF AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c

    151GD12E4S

    Abstract: semikron SKS
    Text: SKS 78F B6CI+B6HK 54 V12 Characteristics Symbol Conditions min. typ. max. Unit 78 A 61 A 50 A 1200 V Electrical Data Irms Tamb = 40 °C fsw = 5 kHz Vac = 500 V Vdc = 750 V cos = 0.85 no overload 150% overload, 60s every 10min 200% overload, 10s every 10min


    Original     		PDF 10min 10min 151GD12E4s 151GD12E4S semikron SKS

    semikron SKS

    Abstract: capacitor semikron SKS 80F
    Text: SKS 80F B6CI+E1CIF+B6U 55 V12 Characteristics Symbol Conditions min. typ. max. Unit 80 A 61 A 50 A 1200 V Electrical Data Irms Tamb = 40 °C fsw = 5 kHz Vac = 500 V Vdc = 750 V cos = 0.85 no overload 150% overload, 60s every 10min 200% overload, 10s every 10min


    Original     		PDF 10min 10min 151GD12E4S semikron SKS capacitor semikron SKS 80F