ta9192
Abstract: TA919 AN7254 AN7260 RFL4N12 RFL4N15
Text: [ /Title RFL4N 12, RFL4N1 5 /Subject (4A, 120V and 150V, 0.400 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO205AF) /Creator () /DOCIN FO pdfmark RFL4N12, RFL4N15 Semiconductor 4A, 120V and 150V, 0.400 Ohm,
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O205AF)
RFL4N12,
RFL4N15
25BVDSS
AN7254
AN7260.
ta9192
TA919
AN7260
RFL4N12
RFL4N15
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AN7254
Abstract: AN7260 RFP2N12 RFP2N15 TB334
Text: [ /Title RFP2N 12, RFP2N1 5 /Subject (2A, 120V and 150V, 1.75 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO220AB) /Creator () /DOCIN FO pdfmark RFP2N12, RFP2N15 Semiconductor 2A, 120V and 150V, 1.750 Ohm,
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O220AB)
RFP2N12,
RFP2N15
AN7254
AN7260
RFP2N12
RFP2N15
TB334
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Untitled
Abstract: No abstract text available
Text: AOT2500L/AOB2500L 150V N-Channel MOSFET General Description Product Summary The AOT2500L/AOB2500L uses Trench MOSFET VDS technology that is uniquely optimized to provide the most ID at VGS=10V 150V 152A efficient high frequency switching performance. Both
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AOT2500L/AOB2500L
AOT2500L/AOB2500L
O-263
ViewOB2500L
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Untitled
Abstract: No abstract text available
Text: AOT2500L/AOB2500L 150V N-Channel MOSFET General Description Product Summary The AOT2500L/AOB2500L uses Trench MOSFET VDS technology that is uniquely optimized to provide the most ID at VGS=10V 150V 152A efficient high frequency switching performance. Both
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AOT2500L/AOB2500L
AOT2500L/AOB2500L
O-263
ViewOB2500L
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IRF5NJ6215
Abstract: No abstract text available
Text: PD - 94284A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4284A
IRF5NJ6215
-150V
-150V,
IRF5NJ6215
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AN7254
Abstract: AN7260 RFL1N12L RFL1N15L
Text: [ /Title RFL1N 12L, RFL1N1 5L /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) RFL1N12L, RFL1N15L Semiconductor 1A, 120V and 150V, 1.900 Ohm,
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O205AF)
RFL1N12L,
RFL1N15L
RFL1N12L
O-205AF
AN7254
AN7260.
AN7260
RFL1N12L
RFL1N15L
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Mosfet
Abstract: SSF1504D
Text: SSF1504D 150V N-Channel MOSFET Main Product Characteristics VDSS 150V RDS on 0.3Ω(typ) ID 6A DPAK Schematic Diagram Assignment Features and Benefits Marking and Pin Advanced trench MOSFET process technology Special designed for PWM, load switching and
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SSF1504D
fo150V
Mosfet
SSF1504D
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P30NS15LFP
Abstract: P30NS15L P30NS JESD97 STP30NS15LFP
Text: STP30NS15LFP N-channel 150V - 0.085Ω - 10A - TO-220FP MESH OVERLAY II Power MOSFET General features Type VDSS RDS on ID STP30NS15LFP 150V <0.1Ω 10A • Extremely high dv/dt capability ■ Application oriented characterization ■ 100% avalanche tested
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STP30NS15LFP
O-220FP
P30NS15LFP
P30NS15L
P30NS
JESD97
STP30NS15LFP
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IRF9640
Abstract: RF1S9640 TA17522 IRF9641 IRF9642 IRF9643 RF1S9640SM TB334 TO-220aB 11A
Text: IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM Semiconductor -9A and -11A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A and -11A, -150V and -200V These are P-Channel enhancement mode silicon-gate
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IRF9640,
IRF9641,
IRF9642,
IRF9643,
RF1S9640,
RF1S9640SM
-150V
-200V,
-200V
IRF9640
RF1S9640
TA17522
IRF9641
IRF9642
IRF9643
RF1S9640SM
TB334
TO-220aB 11A
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Untitled
Abstract: No abstract text available
Text: PD - 94284A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4284A
IRF5NJ6215
-150V
-150V,
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IRF5NJ6215
Abstract: 75vds p mosfet
Text: PD - 94284 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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IRF5NJ6215
-150V
-150V,
IRF5NJ6215
75vds p mosfet
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Mosfet
Abstract: SSF1502D
Text: SSF1502D 150V N-Channel MOSFET Main Product Characteristics VDSS 150V RDS on 0.15Ω(typ) ID 8A DPAK Schematic Diagram Assignment Features and Benefits Marking and Pin Advanced trench MOSFET process technology Special designed for PWM, load switching and
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SSF1502D
f150V
Mosfet
SSF1502D
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Mosfet
Abstract: SSF1526
Text: SSF1526 150V N-Channel MOSFET Main Product Characteristics VDSS 150V RDS on 22mohm(typ.) ID 65A TO - 220 Features and Benefits Marking and Pin Assignment Schematic Diagram Advanced trench MOSFET process technology Special designed for PWM, load switching and
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SSF1526
22mohm
O-220
Mosfet
SSF1526
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P30NS15LFP
Abstract: P30NS
Text: STP30NS15LFP N-channel 150V - 0.085Ω - 10A - TO-220FP MESH OVERLAY II Power MOSFET General features Type VDSS RDS on ID STP30NS15LFP 150V <0.1Ω 10A • Extremely high dv/dt capability ■ Application oriented characterization ■ 100% avalanche tested
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STP30NS15LFP
O-220FP
P30NS15LFP
P30NS
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b40nf10
Abstract: JESD97 STB40NS15 STB40NS15T4 b40n
Text: STB40NS15 N-channel 150V - 0.045Ω - 40A - D2PAK MESH OVERLAY Power MOSFET General features Type VDSS RDS on ID STB40NS15 150V <0.052Ω 40A • Exceptional dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances 3 1 D2PAK Description
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STB40NS15
STB40NS15T4
B40NF10
b40nf10
JESD97
STB40NS15
STB40NS15T4
b40n
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FDB2570
Abstract: FDP2570
Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and
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FDP2570/FDB2570
FDB2570
FDP2570
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RFL1N15
Abstract: AN7254 AN7260 RFL1N12 TB334
Text: RFL1N12, RFL1N15 Semiconductor 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
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RFL1N12,
RFL1N15
TA09196.
AN7254
AN7260.
RFL1N15
AN7260
RFL1N12
TB334
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B40NF
Abstract: JESD97 STB40NS15 STB40NS15T4
Text: STB40NS15 N-channel 150V - 0.045Ω - 40A - D2PAK MESH OVERLAY Power MOSFET Features Type VDSS STB40NS15 150V RDS on (max) <0.052Ω • Exceptional dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances ID 40A 3 1 D2PAK Applications
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STB40NS15
STB40NS15T4
B40NF15
B40NF
JESD97
STB40NS15
STB40NS15T4
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CBVK741B019
Abstract: EO70 F63TNR FDB2570 FDP2570 FDP7060 NDP4060L D2Pak Package dimensions
Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and
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FDP2570/FDB2570
CBVK741B019
EO70
F63TNR
FDB2570
FDP2570
FDP7060
NDP4060L
D2Pak Package dimensions
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2539a
Abstract: No abstract text available
Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and
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FDP2570/FDB2570
2539a
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IRF640 applications note
Abstract: IRF640 IRF642 IRF643 harris IRF640 circuit TA17422 IRF643 RF1S640SM9A for irf640 irf641
Text: IRF640, IRF641, IRF642, SEMICONDUCTOR IRF643, RF1S640, RF1S640SM IHARRIS 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gate
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IRF640,
IRF641,
IRF642,
IRF643,
RF1S640,
RF1S640SM
RF642,
IRF640 applications note
IRF640
IRF642
IRF643 harris
IRF640 circuit
TA17422
IRF643
RF1S640SM9A
for irf640
irf641
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Untitled
Abstract: No abstract text available
Text: IRF220, IRF221, IRF222, IRF223 Semiconductor 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 4.0A and 5.0A, 150V and 200V • Majority Carrier Device These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRF220,
IRF221,
IRF222,
IRF223
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Untitled
Abstract: No abstract text available
Text: y *“ * RFL1N12, RFL1N15 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Description Features 1A, 120V and 150V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
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OCR Scan
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PDF
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RFL1N12,
RFL1N15
TA09196.
AN7254
AN7260.
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Untitled
Abstract: No abstract text available
Text: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRF230,
IRF231,
IRF232,
IRF233
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