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    150GAL Price and Stock

    SEMIKRON SKM150GAL12V 22892301

    Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SKM150GAL12V 22892301 1
    • 1 $103.29
    • 10 $86.6
    • 100 $86.6
    • 1000 $86.6
    • 10000 $86.6
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    SEMIKRON SKM150GAL12T4 22892300

    Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SKM150GAL12T4 22892300 75 1
    • 1 $102.75
    • 10 $81.72
    • 100 $81.72
    • 1000 $81.72
    • 10000 $81.72
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    SEMIKRON SKM150GAL12F4G 22896150

    Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SKM150GAL12F4G 22896150 1
    • 1 $177.75
    • 10 $156.08
    • 100 $140.9
    • 1000 $140.9
    • 10000 $140.9
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    SEMIKRON SKM150GAL12TA

    Electronic Component
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    ComSIT USA SKM150GAL12TA 8
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    SEMIKRON SKM150GAL123D

    SEMITRANS 3 IGBT MODULE Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SKM150GAL123D 11
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    150GAL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SKM 150GB123D Absolute Maximum Ratings Symbol Conditions IGBT *5 &* &*8 95 SKM 150GB123D 1<58+1& = 1       Typical Applications      #    4* /300 & &(8 1 2 /3 70 4* 2 .  &( 2 .0 A  ?A 1; 2 .30 4* .30 .00 /00


    Original     		PDF 150GB123D 150GB123D 150GAL123D

    Untitled

    Abstract: No abstract text available
    Text: SKHI 10/12 R . Absolute Maximum Ratings Symbol Conditions H%;1( 7F E81& 4%& E8100 4%& h1./@5.(;) :15 $.55(K ,1(/B') 5+%4B+K 7&5./ ;%'&B( ,1(/B') J=78=N J01+ >a H B&* a H %&5./ (),)(N F./5./ 5)BV -.+)&/ F./5./ B,)+B') -.+)&/ J4Be_N I1()-/1+ )4%//)+ ,1(/B') ;)&;)


    Original     		PDF HM789 -145B/

    circuit diagram for igbt driver

    Abstract: molex 41791 semikron SKm 123D 123d transistor IGBT DRIVER SEMIKRON semikron SKHI 1200VIGBT 123D 2A mosfet igbt driver stage high power FERRITE TRANSFORMER
    Text: SKHI 10/12 Absolute Maximum Ratings Symbol Conditions VS Supply voltage primary Input signal voltage HIGH (for 15 V and 5 V input level) Output peak current Output average current (max.) Collector emitter voltage sense Rate of rise and fall of voltage (secondary


    Original     		PDF 200V-IGBT) circuit diagram for igbt driver molex 41791 semikron SKm 123D 123d transistor IGBT DRIVER SEMIKRON semikron SKHI 1200VIGBT 123D 2A mosfet igbt driver stage high power FERRITE TRANSFORMER

    DIN 17006

    Abstract: 123d transistor semikron IGBT SKHI10 semikron SKm 123D DRIVER IGBT SEMIKRON SKPC platine inverter semikron SKHI 22 123D 5v dc smps
    Text: SEMIDRIVER Absolute Maximum Ratings Ta=25 °C Symbol VS ViH IoutPEAK IoutAVmax VCE dv/dt Visol IO Rgon min Rgoff min Qout/pulse Top Tstg Term Supply voltage primary Inputsignal voltage (HIGH) (for 15 V and 5 V input level) Output peak current Output average current (max.)


    Original     		PDF

    123D TRANSISTOR

    Abstract: SEMIKRON SKHI 65 TRANSISTOR 123D 2A mosfet igbt driver stage SKHI 65 Pulse Transformer semikron SKHI 22 semikron SKm 123D Intelligent Power Module semikron 500GA123D
    Text: SKHI 10/12 Absolute Maximum Ratings Symbol Conditions  ) ) ' &  &  I!    ,  #  # ,  #  # +/ + B ) # B )  / '  #7   ' # #   +#F@/ *    #   &#  


    Original     		PDF SKHI10 123D TRANSISTOR SEMIKRON SKHI 65 TRANSISTOR 123D 2A mosfet igbt driver stage SKHI 65 Pulse Transformer semikron SKHI 22 semikron SKm 123D Intelligent Power Module semikron 500GA123D

    Untitled

    Abstract: No abstract text available
    Text: SKHI 10/17 R . Absolute Maximum Ratings Symbol Conditions H%;1( 7F E81& 4%& E8100 4%& i1./@5.(;) :15 $.55(K ,1(/B') 5+%4B+K 7&5./ ;%'&B( ,1(/B') J=78=N J01+ >b H B&* b H %&5./ (),)(N F./5./ 5)BV -.+)&/ F./5./ B,)+B') -.+)&/ J4BgaN I1()-/1+ )4%//)+ ,1(/B') ;)&;)


    Original     		PDF HM789 -145B/

    Untitled

    Abstract: No abstract text available
    Text: SKM 150GB123D R3 S NT UI9 * /2<< .+824>'<2 < 23'B'25 Absolute Maximum Ratings Symbol Conditions IGBT ?IV& RW S NT UI EI RW S MTO UI MNOO ? MTO J R30<2 S YO UI MMO J NOO J ¥ NO ? MO `< R30<2 S NT UI MTO J R30<2 S YO UI MOO J NOO J RW S MTO UI MMOO J R30<2 S NT UI


    Original     		PDF 150GB123D

    453gb12e4s

    Abstract: SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c
    Text: Application Note AN-9001 Revision: 01 Issue Date: 2009-03-01 Prepared by: Dr. Arendt Wintrich Key Words: IGBT, Trench4, Switching Behaviour, Cross Reference IGBT4 and free wheeling diode CAL4 in IGBT modules General properties . 1


    Original     		PDF AN-9001 453gb12e4s SEMIX 71GD12E4S 300gb12e4 igbt cross-reference SKM200GB128D SEMiX 202GB12E4s SEMiX453GB12E4 101GD12E4s IGBT cross reference semikron 303GD12E4-c

    123d transistor

    Abstract: semikron SKm 123D 123d transistor 123D DIN 17006 semikron SKHI 123D IGBT, 400A, 1200V(2) MATCHED 3 phase UPS block diagram using IGBT FERRITE TRANSFORMER asymmetrical igbt
    Text: SEMIDRIVER Absolute Maximum Ratings Ta=25 °C Symbol VS ViH IoutPEAK IoutAVmax VCE dv/dt Visol IO Rgon min Rgoff min Qout/pulse Top Tstg Term Supply voltage primary Inputsignal voltage (HIGH) (for 15 V and 5 V input level) Output peak current Output average current (max.)


    Original     		PDF

    FZ1600R12KF4

    Abstract: IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb
    Text: power . Home Products IGBT 600V the News 1200V Contact Job Offers Company Search Site Content 1600V/1700V 2500V/3300V Sixpack Power Integrated Modules In Editorials future Low Loss. Half-Bridge Packages 50A BSM 50GB60DLC 75A BSM 75GB60DLC 100A BSM 100GB60DLC


    Original     		PDF 600V/1700V 500V/3300V 50GB60DLC 75GB60DLC 100GB60DLC 150GB60DLC 200GB60DLC 300GB60DLC FZ1600R12KF4 IGBT FZ 800 75GD120DN2 100GB170DN2 IGBT FZ 1200r16kf4 igbt driver BSM10GD60DLC FZ800R12KL4C igbt 1600V 20A eupec igbt BSM 100 gb

    123D TRANSISTOR

    Abstract: Intelligent Power Module semikron 2A mosfet igbt driver stage semikron SKHI 22 SEMIKRON SKHI 65 SKHI 65 TRANSISTOR 123D semikron SKm 123D molex 41791 SKHI10
    Text: SKHI 10/17 R . Absolute Maximum Ratings Symbol Conditions ) ) ) ' &  &  J!    ,  #  # ,  #  # +/ + C ) # C )  / '  #7   ' # #   +#HB/ *    #   &#


    Original     		PDF SKHI10 123D TRANSISTOR Intelligent Power Module semikron 2A mosfet igbt driver stage semikron SKHI 22 SEMIKRON SKHI 65 SKHI 65 TRANSISTOR 123D semikron SKm 123D molex 41791 SKHI10

    150GAR12T4

    Abstract: No abstract text available
    Text: SKM 150GB12T4  27 8$  "      - Absolute Maximum Ratings Symbol Conditions IGBT * ; 27 8  ; 6>7 8 A 6233  2?3 +  @3 8 6@3 + 73 + B 23  63 E  27 8 6G3 +  @3 8 6 3 + 73 + G33 + 233 + 9 3 :6>7 8 9 3 :627


    Original     		PDF 150GB12T4 150GAL12T4 150GAR12T4 150GAR12T4

    Untitled

    Abstract: No abstract text available
    Text: SKM 150GB12T4  27 8$  "      - Absolute Maximum Ratings Symbol Conditions IGBT * ; 27 8  ; 6>7 8 A 6233  2?3 +  @3 8 6@3 + 73 + B 23  63 E  27 8 6G3 +  @3 8 6 3 + 73 + G33 + 233 + 9 3 :6>7 8 9 3 :627


    Original     		PDF 150GB12T4 150GAL12T4 150GAR12T4 60747-This

    skm150gb123d

    Abstract: No abstract text available
    Text: SKM 150GB123D Absolute Maximum Ratings Symbol Conditions IGBT *5 &* &*8 :5 1=58+1& > 1  + + 4* /300 Inverse diode SEMITRANSTM 3 IGBT Modules & &(8 1 2 /3 70 4* 1 2 /3 70 4* 2 .  &( 2 .0 B  @B 1< 2 .30 4* .30 .00 900 //0 + + .00


    Original     		PDF 150GB123D 150GB123D 150GAL123D 150GAR123D skm150gb123d

    150GB123D

    Abstract: No abstract text available
    Text: SKM 150GB123D Absolute Maximum Ratings Symbol Conditions IGBT *5 &* &*8 95 1<58+1& = 1  + + 4* /300 Inverse diode SEMITRANSTM 3 IGBT Modules & &(8 1 2 /3 70 4* 2 .  &( 2 .0 A  ?A 1; 2 .30 4* .30 .00 /00 + + .00 + /00 .B3 B00 + +


    Original     		PDF 150GB123D 150GB123D 150GAL123D 150GAR123D

    Germanium itt

    Abstract: thyratron pl 21 Mallory Vibrator Data Book National Electronics ignitrons bat CR Li Mn lab test result Helipot POTENTIOMETER Bendix Transistors selenium rectifier westinghouse 5000W AUDIO AMPLIFIER 6cl6
    Text: 1q5 OCZ CHICAGO, 5' Three Regional Conventions SHARE THOS Pleose Route COPY! to www.americanradiohistory.com ,titiSCON 1956 the replacement for tubular ceramic and mica capacitors RMC DISCAPS 520 .260 .860 .890 RMC RMC .570 .355 .400 1.290 .760 .790 RMC 470


    Original     		PDF P-100 N-1500 N-2200 Germanium itt thyratron pl 21 Mallory Vibrator Data Book National Electronics ignitrons bat CR Li Mn lab test result Helipot POTENTIOMETER Bendix Transistors selenium rectifier westinghouse 5000W AUDIO AMPLIFIER 6cl6

    SKM150GB123D

    Abstract: skm150gal123d SEMIKRON
    Text: SKM 150GB123D 3 4 /5 6*     # Absolute Maximum Ratings Symbol Conditions IGBT Values 38 4 /5 6* *7 &* ./00 38 4 .50 6* &*; 3 4 /5 6* .50 + 3 4 :0 6* .0 + /00 + &*;4/%&*  = /0 <7 SEMITRANS 3 IGBT Modules  .0 A 3 4 /5 6*


    Original     		PDF 150GB123D 150GAL123D SKM150GB123D skm150gal123d SEMIKRON

    123d transistor

    Abstract: SKHI 65 SEMIKRON SKHI 65 2A mosfet igbt driver stage semikron SKHI 22 skm75gal123d SKM150GAL161D Intelligent Power Module semikron
    Text: SKHI 10/12 R . Absolute Maximum Ratings Symbol Conditions ) ) ) ' &  &  I!    ,  #  # ,  #  # +/ + B ) # B )  / '  #7   ' # #   +#F@/ *    #   &#


    Original     		PDF SKHI10 123d transistor SKHI 65 SEMIKRON SKHI 65 2A mosfet igbt driver stage semikron SKHI 22 skm75gal123d SKM150GAL161D Intelligent Power Module semikron

    skm150gb123d

    Abstract: No abstract text available
    Text: SKM 150GB123D 3 4 /5 6*     # Absolute Maximum Ratings Symbol Conditions IGBT Values 38 4 /5 6* *7 &* ./00 38 4 .50 6* &*; 3 4 /5 6* .50 + 3 4 :0 6* .0 + /00 + &*;4/%&*  = /0 <7 SEMITRANS 3 IGBT Modules  .0 A 3 4 /5 6*


    Original     		PDF 150GB123D 150GAL123D skm150gb123d

    Untitled

    Abstract: No abstract text available
    Text: SKM 150GB12T4  27 8$  "      - Absolute Maximum Ratings Symbol Conditions IGBT * ; 27 8  ; 6>7 8 A 6233  2?3 +  @3 8 6@3 + 73 + B 23  63 E  27 8 6G3 +  @3 8 6 3 + 73 + G33 + 233 + 9 3 :6>7 8 9 3 :627


    Original     		PDF 150GB12T4 150GAL12T4 150GAR12T4

    123d transistor

    Abstract: mosfet 700V 400A 100Khz transistor 123D 123d H BRIDGE inverters circuit diagram using igbt semikron SKm 123D FERRITE TRANSFORMER 2A mosfet igbt driver stage igbt 400A semikron SKHI 22
    Text: 6 0,'5,9(5Š $EVROXWH 0D[LPXP 5DWLQJV 7D  ƒ& 6\PERO 96 9L+ ,RXW3($. ,RXW$9PD[ 9&( GYGW 9LVRO ,2 5JRQ PLQ 5JRII PLQ 4RXWSXOVH 7RS 7VWJ 7HUP 6XSSO\ YROWDJH SULPDU\ ,QSXWVLJQDO YROWDJH +,*+ IRU  9 DQG  9 LQSXW OHYHO 2XWSXW SHDN FXUUHQW 2XWSXW DYHUDJH FXUUHQW PD[


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: S E M IK R O N SEMIDRIVER Absolute Maximum Ratings Ta=25 °C Sym bol T e rm VS S u p p ly v o lta g e p rim a ry V iH In p u tsig n a l v o lta g e (H IG H ) (fo r 15 V a n d 5 V in p u t level) lO U tp E A K O u tp u t p e a k c u rre n t lO U tA V m a x


    OCR Scan     		PDF