6ES7223-1BL30-0XB0
Abstract: 16DO SM1223 1223 digital transistor 16DI S7-1200
Text: 6ES7223-1BL30-0XB0 Page 1 Product data sheet 6ES7223-1BL30-0XB0 SIMATIC S7-1200, DIGITAL I/O SM 1223, 16DI / 16DO, 16DI DC 24 V, SINK/SOURCE, 16DO, TRANSISTOR 0.5A Supply voltages Rated value 24 V DC Yes permissible range, lower limit DC 20.4 V permissible range, upper limit (DC)
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6ES7223-1BL30-0XB0
S7-1200,
6ES7223-1BL30-0XB0
16DO
SM1223
1223 digital transistor
16DI
S7-1200
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Untitled
Abstract: No abstract text available
Text: MBRS130L MBRS130L Features • Compact surface mount package with J-bend leads. • 1.5 Watt Power Dissipation package. • 1.0 Ampere, forward voltage less than 395 mv. SMB/DO-214AA Color Band Denotes Cathode Mark: 1BL3 Schottky Rectifiers Absolute Maximum Ratings*
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MBRS130L
SMB/DO-214AA
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1bl3
Abstract: diode 1bl3 MBRS130L on 1bl3
Text: MBRS130L MBRS130L Features • Compact surface mount package with J-bend leads. • 1.5 Watt Power Dissipation package. • 1.0 Ampere, forward voltage less than 395 mv. SMB/DO-214AA Color Band Denotes Cathode Mark: 1BL3 Schottky Rectifiers Absolute Maximum Ratings*
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MBRS130L
SMB/DO-214AA
1bl3
diode 1bl3
MBRS130L
on 1bl3
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1bl3
Abstract: diode 1bl3 JEDEC DO-214AA DO-214AA package power rating 18L3 CBVK741B019 F63TNR F924 MBRS130L SS22
Text: MBRS130L MBRS130L Features • Compact surface mount package with J-bend leads. • 1.5 Watt Power Dissipation package. • 1.0 Ampere, forward voltage less than 395 mv. SMB/DO-214AA COLOR BAND DENOTES CATHODE TOP MARK: 1BL3 1.0 Ampere Schottky Power Rectifiers
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MBRS130L
SMB/DO-214AA
12lopment.
1bl3
diode 1bl3
JEDEC DO-214AA
DO-214AA package power rating
18L3
CBVK741B019
F63TNR
F924
MBRS130L
SS22
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U840 diode motorola
Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000 SCILLC, 2000 Previous Edition 1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in
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DL151/D
Nov-2000
r14525
U840 diode motorola
motorola u860 diode
DIODE u1560
b2045 aka
u1560 DIODE
u860 diode
u1560
diode U3J
U820 diode
fast recovery diode ses5001
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j2y transistor
Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi conductor is correct for your application, this brochure outlines maximum ratings,
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O220AB
O-126
j2y transistor
T15J10
MP4704
MG100M2CK1
2sb834
MP3103
MG50J6ES91
MP3002
mp4505
2sc497
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SM1223
Abstract: S71200 S7-1200 simatic s7 - 1200 1PL30-0XB0 SM223 siemens S7-1200 siemens de 6es7 350
Text: SM 1223 digital input/output module - Industry Mall - Siemens DE Page 1 of 6 Home Full Navigation Path Siemens Industry Catalogue Automation technology Automation Systems SIMATIC Industrial Automation Systems Controllers SIMATIC S7 modular controllers S7-1200
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S7-1200
SM1223
S71200
S7-1200
simatic s7 - 1200
1PL30-0XB0
SM223
siemens S7-1200
siemens de
6es7 350
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MG15G1AL3
Abstract: MG50G1BL3 mg30g1bl3 MG25M1BK1 MG30G1BL4 MG30G1JL1 MG50m1bk1 2-33c1a 2-22b1a MG200
Text: 213 — — * 2 -OA E2 Bl E1/ K ( C 2 ) B2 : NC Ì Ì 3 . x-f -v-f (T, ttfc*Œ z -f 7 f- > y m i (V) on I, V CE ft V be + J- î 7 y • 3 u ? ?fi' a m - - - K = 25°C ) V f ( u s) L I Ul , t , (V) R !h (,-c) , Ip ( u s) I? V be di/dt (A) CC/W) m - F §15
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2-22B1A
MG15G1AL3
2-33F1A
MG15H1AL1
2-33D1A
MG25M1BK1
2-33C1A
MG30G1BL3
H-101
MG15G1AL3
MG50G1BL3
mg30g1bl3
MG25M1BK1
MG30G1BL4
MG30G1JL1
MG50m1bk1
2-22b1a
MG200
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1bl3
Abstract: diode 1bl3 MBRS130LT3 on 1bl3 MBRS130LT3G Micro-D
Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130LT3
MBRS130LT3/D
1bl3
diode 1bl3
MBRS130LT3
on 1bl3
MBRS130LT3G
Micro-D
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1bl3
Abstract: diode 1bl3 on 1bl3 MBRS130LT3 1BL3 marking code MBRS130LT3G MBRS130LT3G ON SEMICONDUCTOR
Text: MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130LT3
MBRS130LT3/D
1bl3
diode 1bl3
on 1bl3
MBRS130LT3
1BL3 marking code
MBRS130LT3G
MBRS130LT3G ON SEMICONDUCTOR
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TA8172AF
Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16
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015Z10
015Z11
015Z12
015Z2
015Z3
TA8172AF
TB 1226 BN
TA8859P
mg75n2ys40
t6961A
TA8242AK
ta8644n
7378P
ta8310
7628P
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1BL3 marking code
Abstract: MBRS130LT3G SBRS8130LT3G 1bl3 diode MBRS130LT 1BL3
Text: MBRS130LT3G, SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130LT3G,
SBRS8130LT3G
MBRS130LT3/D
1BL3 marking code
MBRS130LT3G
1bl3 diode
MBRS130LT
1BL3
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Untitled
Abstract: No abstract text available
Text: MBRS130LT3G, SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130LT3G,
SBRS8130LT3G
MBRS130LT3/D
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1bl3
Abstract: on 1bl3 diode 1bl3 mma130 MBRS130L
Text: MBRS130L DISCRETE POWER AND SIGNAL TECHNOLOGIES SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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MBRS130L
100OC
1bl3
on 1bl3
diode 1bl3
mma130
MBRS130L
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diode 1bl3
Abstract: 1BL3 on 1bl3 G3060 Mark 1BL3 MBRS130L
Text: MBRS130L FAIRCH.LD MICDNDUCTQR T m DISCR^CPH ro“ SIGNAL SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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MBRS130L
diode 1bl3
1BL3
on 1bl3
G3060
Mark 1BL3
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Untitled
Abstract: No abstract text available
Text: FAIRCHILD S E M IC O N D U C T O R tm MBRS130L SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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MBRS130L
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diode 1bl3
Abstract: 1bl3 marking code 1BL3 1BL3 marking code MBRS130LT3 150 1BL3
Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130LT3
diode 1bl3
1bl3
marking code 1BL3
1BL3 marking code
MBRS130LT3
150 1BL3
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diode 1bl3
Abstract: 1bl3 1BL3 marking code MBRS130LT3 diode+1bl3 on 1bl3
Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130LT3
diode 1bl3
1bl3
1BL3 marking code
MBRS130LT3
diode+1bl3
on 1bl3
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1bl3
Abstract: on 1bl3 diode 1bl3 MBRS130L
Text: MBRS130L MBRS130L Features • 0.185 4.699 0.160 (4.064) 0.083 (2.108) 0.075 (1.905 ) Compact surface mount package with J-bend leads. • 1.5 Watt Power Dissipation package. • 1.0 Ampere, forward voltage less than 395 mv. 2 0.155 (3.937) 0.130 (3.302)
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MBRS130L
SMB/DO-214AA
1bl3
on 1bl3
diode 1bl3
MBRS130L
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1bl3 motorola
Abstract: diode 1bl3 1BL3 diode 1bl3 141 MBRS130LT3 MBRS130LT3 marking 403A-03 1BL3 141 schottky power rectifier MOTOROLA
Text: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Schottky Power Rectifier MBRS130LT3 Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with
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MBRS130LT3/D
MBRS130LT3
1bl3 motorola
diode 1bl3
1BL3
diode 1bl3 141
MBRS130LT3
MBRS130LT3 marking
403A-03
1BL3 141
schottky power rectifier MOTOROLA
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1bl3 motorola
Abstract: diode 1bl3 MBRS130LT3 1bl3 on 1bl3 MBRS130LT3 marking schottky power rectifier MOTOROLA motorola diode device data diode 1bl3 141
Text: MOTOROLA Order this document by MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package Motorola Preferred Device . . . Employs the Schottky Barrier principle in a large area metal–to–silicon
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MBRS130LT3/D
MBRS130LT3
1bl3 motorola
diode 1bl3
MBRS130LT3
1bl3
on 1bl3
MBRS130LT3 marking
schottky power rectifier MOTOROLA
motorola diode device data
diode 1bl3 141
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diode 1bl3
Abstract: 1bl3 on 1bl3 marking code 1BL3 1BL3 marking code MBRS130LT3 150 1BL3 MBRS130LT3 marking CASE 403A
Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130LT3
r14525
MBRS130LT3/D
diode 1bl3
1bl3
on 1bl3
marking code 1BL3
1BL3 marking code
MBRS130LT3
150 1BL3
MBRS130LT3 marking
CASE 403A
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diode 1bl3
Abstract: MBRS130LT3
Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130LT3
MBRS130LT3/D
diode 1bl3
MBRS130LT3
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diode 1bl3
Abstract: MBRS130LT3
Text: MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130LT3
MBRS130LT3/D
diode 1bl3
MBRS130LT3
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