TC358700XBG
Abstract: TC35285 superflash 2006 cmos ram i2c lcd toshiba lvds LQFP80 QFP80 TC35285XBG TMP86FS28DFG TMP86FS28FG
Text: EYE 05 May 2006 東芝半導体情報誌アイ 2006年5月号 VOLUME 166 CONTENTS INFORMATION 新製品情報 フラッシュメモリ内蔵8ビットマイクロコントローラ .2
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300mm
TMP86FS28FG/DFG
QFP80
LQFP80
TMP86FS28FG
TMP86FS28DF
TC358700XBG
TC35285
superflash 2006
cmos ram i2c
lcd toshiba lvds
TC35285XBG
TMP86FS28DFG
TMP86FS28FG
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Untitled
Abstract: No abstract text available
Text: TinyPowerTM A/D Type with LCD 8-Bit OTP MCU HT56R62/HT56R65 HT56R642/HT56R644/HT56R654/HT56R656 Revision: V1.40 Date: ���������������� October 31, 2013 HT56R62/HT56R65 HT56R642/HT56R644/HT56R654/HT56R656 TinyPowerTM A/D Type with LCD 8-Bit OTP MCU
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HT56R62/HT56R65
HT56R642/HT56R644/HT56R654/HT56R656
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Untitled
Abstract: No abstract text available
Text: EM78P468NB/P470N 8-Bit Microcontroller Product Specification DOC. VERSION 1.2 ELAN MICROELECTRONICS CORP. November 2012 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.
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EM78P468NB/P470N
QFP-44L
QFP44
EM78P470NQ44
44-Pin
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Untitled
Abstract: No abstract text available
Text: TinyPowerTM A/D Flash Type 8-Bit MCU with LCD & EEPROM HT67F30/HT67F40/HT67F50/HT67F60 Revision: V1.90 Date: ����������������� December 19, 2013 HT67F30/HT67F40/HT67F50/HT67F60 TinyPowerTM A/D Flash Type 8-Bit MCU with LCD & EEPROM
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HT67F30/HT67F40/HT67F50/HT67F60
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OS10
Abstract: USB2229 MA13 MA12
Text: USB2229/USB2230 5th Generation Hi-Speed USB Flash Media and IrDA Controller with Integrated Card Power FETs PRODUCT FEATURES Datasheet IrDA Controller IrDA v1.1 FIR and SIR Compliant Controller, with 9.6K, 19.2K, 38.4K, 57.6K, 115.2K, 0.576Mbps, 1.152Mpbs and 4Mbps data rate support.
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USB2229/USB2230
576Mbps,
152Mpbs
A16/ROMEN
GPIO10
GPIO11
GPIO12
OS10
USB2229
MA13
MA12
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WED8L24257V
Abstract: DSP5630X
Text: WED8L24257V Asynchronous SRAM, 3.3V, 256Kx24 FEATURES DESCRIPTION n 256Kx24 bit CMOS Static The WED8L24257VxxBC is a 3.3V, twelve megabit SRAM constructed with three 256Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V
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WED8L24257V
256Kx24
256Kx24
WED8L24257VxxBC
256Kx8
WED8L24257V
DSP5630x
2106xL
DSP5630X
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gw 360
Abstract: No abstract text available
Text: EDI2GG432128V 4x128Kx32 Synchronous SRAM CARD EDGE DIMM FEATURES • 4x128Kx32 Synchronous The EDI2GG432128VxxD is a Synchronous SRAM, 60 position Card Edge; DIMM 120 contacts Module, organized as 4x128Kx32. The Module contains four (4) Synchronous Burst Ram Devices,
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EDI2GG432128V
4x128Kx32
EDI2GG432128VxxD
4x128Kx32.
14mmx20mm
EDI2GG432128V95D*
EDI2GG432128V10D*
EDI2GG432128V11D
EDI2GG432128V12D
gw 360
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128*64
Abstract: transistor GW 93 H GW 94 H
Text: EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM Advanced 4x128Kx64, 3.3V Synchronous Flow-Through Module Features • 4x128Kx64 Synchronous • Flow-Through Architecture • Clock Controlled Registered Bank Enables E1\, E2\, E3, E4\ • Clock Controlled Registered Address
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EDI2KG464128V
4x128Kx64,
4x128Kx64
EDI2KG64128VxxD
01581USA
EDI2KG464128V
128*64
transistor GW 93 H
GW 94 H
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K7P801866M
Abstract: SA12 SA13
Text: K7P803666M K7P801866M 256Kx36 & 512Kx18 SRAM Document Title 256Kx36 & 512Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Draft Date Remark Rev. 0.0 Rev. 1.0 - Preliminary specification release - Final specification release Mar. 1999 Nov. 1999
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K7P803666M
K7P801866M
256Kx36
512Kx18
K7P80186SRAM
K7P801866M
SA12
SA13
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Untitled
Abstract: No abstract text available
Text: K7P323674C K7P321874C 1Mx36 & 2Mx18 SRAM 36Mb Late Write SRAM Specification 119BGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7P323674C
K7P321874C
1Mx36
2Mx18
119BGA
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WED8L24513V
Abstract: No abstract text available
Text: WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V
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WED8L24513V
512Kx24
512Kx24
WED8L24513VxxBC
512Kx8
WED8L24513V
DSP5630x
2106xL
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EDI2AG272129V
Abstract: GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
Text: EDI2AG272129V 2x128Kx72, 3.3V Sync/Sync Burst SRAM SO-DIMM ADVANCED* FEATURES • 2x128Kx72 Synchronous, Synchronous Burst The EDI2AG272129VxxD1 is a Synchronous/Synchronous Burst SRAM, 72 position DIMM 144 contacts Module, organized as 2x128Kx72. The Module contains four (4) Synchronous Burst
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EDI2AG272129V
2x128Kx72,
2x128Kx72
EDI2AG272129VxxD1
2x128Kx72.
14mmx20mm
s129V
EDI2AG272129V85D1*
EDI2AG272129V9D1*
EDI2AG272129V10D1
EDI2AG272129V
GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
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Untitled
Abstract: No abstract text available
Text: EDI2GG418128V 4x128Kx18, 3.3V Synchronous Flow-Through SRAM CARD EDGE DIMM FEATURES • 4x128Kx18 Synchronous The EDI2GG418128VxxD2 is a Synchronous SRAM, 60 position Card Edge; DIMM 120 contacts module, organized as 4x128Kx64. The module contains four (4) Synchronous Burst Ram Devices,
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EDI2GG418128V
4x128Kx18,
4x128Kx18
EDI2GG418128VxxD2
4x128Kx64.
14mmx20mm
EDI2GG418128V95D*
EDI2GG418128V10D*
4x128Kx18
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DIMM_200
Abstract: No abstract text available
Text: EDI2GG46464V 4x64Kx64, 3.3V Synchronous SRAM CARD EDGE DIMM FEATURES • 4x64Kx64 Synchronous The EDI2GG46464VxxD is a Synchronous SRAM, 60 position Dual Key; Card Edge DIMM 120 contacts Module, organized as 4x64Kx64. The Module contains eight (8) Synchronous Burst
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EDI2GG46464V
4x64Kx64,
4x64Kx64
EDI2GG46464VxxD
4x64Kx64.
14mmx20mm
EDI2GG46464V95D*
EDI2GG46464V10D
EDI2GG46464V11D
EDI2GG46464V12D
DIMM_200
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WED2DG472512V-D2
Abstract: No abstract text available
Text: WED2DG472512V-D2 16MB 4x512Kx72 SYNC BURSTPIPELINE, DUAL KEY DIMM ADVANCED* FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ FIG. 1 4x512Kx72 Synchronous, Synchronous Burst Pipeline Architecture; Single Cycle Deselect
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WED2DG472512V-D2
4x512Kx72)
4x512Kx72
WED2DG472512V5D2
200MHz
WED2DG472512V6D2
166MHz
WED2DG472512V65D2
150MHz
WED2DG472512V7D2
WED2DG472512V-D2
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Untitled
Abstract: No abstract text available
Text: K7P803611M K7P801811M 256Kx36 & 512Kx18 SRAM Document Title 256Kx36 & 512Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Draft Date Remark Rev. 0.0 Rev. 1.0 - Preliminary specification release - Final specification release Mar. 1999 Nov. 1999
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K7P803611M
K7P801811M
256Kx36
512Kx18
K7P80181SRAM
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A13L
Abstract: IDT709269 IDT709269S
Text: PRELIMINARY IDT709269S/L HIGH-SPEED 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access Commercial: 9/12/15ns max.
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IDT709269S/L
9/12/15ns
IDT709269S
950mW
IDT709269L
A13L
IDT709269
IDT709269S
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GW 94 H
Abstract: EDI2CG472128VxxD2 transistor GW 93 H EDI2CG472128V
Text: White Electronic Designs EDI2CG472128V ADVANCED* 4 Megabyte Sync/Sync Burst, Dual Key DIMM DESCRIPTION FEATURES The EDI2CG472128VxxD2 is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM 168 contacts Module, organized as 4x128Kx72. The Module
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EDI2CG472128V
EDI2CG472128VxxD2
4x128Kx72.
14mmx20mm
EDI2CG472128V85D2*
4x128Kx72
EDI2CG472128V10D2*
EDI2CG472128V12D2
GW 94 H
transistor GW 93 H
EDI2CG472128V
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GW 94 H
Abstract: A015 EDI2GG464128V ICC3-400
Text: White Electronic Designs EDI2GG464128V 4MB SYNCHRONOUS CARD EDGE DIMM FEATURES DESCRIPTION 4x128Kx64 Synchronous The EDI2KG64128VxxD is a Synchronous SRAM, 60 position Card Edge DIMM 120 contacts Module, organized as 4x128Kx64. The Module contains eight
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EDI2GG464128V
4x128Kx64
EDI2KG64128VxxD
4x128Kx64.
14mmx20mm
mem050)
GW 94 H
A015
EDI2GG464128V
ICC3-400
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Untitled
Abstract: No abstract text available
Text: K7P803666M K7P801866M 256Kx36 & 512Kx18 SRAM Document Title 256Kx36 & 512Kx18 Synchronous Pipelined SRAM Revision History Rev. No. History Draft Date Remark Rev. 0.0 - Preliminary specification release Mar. 1999 Preliminary Rev. 1.0 - Final specification release
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K7P803666M
K7P801866M
256Kx36
512Kx18
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Untitled
Abstract: No abstract text available
Text: K7P163612M K7P161812M 512Kx36 & 1Mx18 SRAM Document Title 512Kx36 & 1Mx18 Synchronous Pipelined SRAM Register-Latch Revision History Rev. No. History Draft Date Remark Rev. 0.0 - Initial Document Aug. 2000 Advance Rev. 1.0 - V DDQ Min. changed to 1.4V - Package thermal characteristics added.
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K7P163612M
K7P161812M
512Kx36
1Mx18
27x16
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IP60G
Abstract: sg07 V1625 MP5004-3 MP5004 fuse 13A Volex S-G-07 molded connector marking ADO
Text: DRAWING N UM BER: REVISION 1000201 H C A B LE CUTTING 15~18 CABLE SO UR CE : 1. GAO HtNG<SHENZHEN . 2. TONG YUAN SHENZHEN). 4 ± i3 . TA HSING(SHENZHEN) a 2 Q 5 0 ± 10 ASSEM BLY NEUTRAL(BLUE) LIVE(BROWN) —s/nnD—[*“T»—— t n_E • 170i§5 N ot«9 :
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-ENG-057-FM010
415X245MM
OL-ENG-0S7-FM012
IP60G
sg07
V1625
MP5004-3
MP5004
fuse 13A
Volex
S-G-07
molded connector
marking ADO
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Untitled
Abstract: No abstract text available
Text: ma EDI2GG43264V 1Megabyte Synchronous Card Edge DIMM ELECTRONIC DESIGNS. INC. 4x64Kx32, 3.3V Module Features Sync/Sync Burst Flow-Through 4x64Kx32 Synchronous The EDI2KG43264VxxD is a Synchronous SRAM, 60 position, Card Edge DIMM 120 contacts Module, orga
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EDI2GG43264V
4x64Kx32,
4x64Kx32
EDI2KG43264VxxD
4x64Kx32.
14mmx20mm
EDI2GG43264V
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Untitled
Abstract: No abstract text available
Text: EDI2CG472256V 8 Megabyte Sync/Sync Burst, Dual Key DIMM ELECTRONIC DESIGNS. INC. 4x256Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 4x256Kx72 Synchronous, Synchronous Burst The EDI2CG472256VxxD2 is a Synchronous/Synchro nous Burst SRAM, 84 position Dual Key; Double High
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EDI2CG472256V
4x256Kx72,
4x256Kx72
EDI2CG472256VxxD2
4x256Kx72.
14mmx20mm
EDI2CG472256V
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