NX3008
Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1
|
Original
|
PDF
|
AON2240
AON2401
AON2405
AON2406
AON2407
AON2408
AON2409
AON2410
AON2420
AON2701
NX3008
IRLHS6242
SiA431DJ
SSM6J503NU
IRLHS2242
DMN3730UFB4
FDMA1028NZ
FDMA3028N
|
Untitled
Abstract: No abstract text available
Text: Film Capacitors CXPLP 90-38.0 t5 K date: 12.11.2009 12:33 issued by: hsb version: 1.0 Technical data µF ± 10% V V V Ws A V/µs m x10-4 nH Pmax @ case Imax 32,1 W 25,0 W 17,9 W 10,7 W 40 °C 50 °C 60 °C 70 °C 113,4 A 100,0 A 84,5 A 65,5 A UNmax @ case
|
Original
|
PDF
|
x10-4
M8x20+
10kHz
|
H10330B-75
Abstract: No abstract text available
Text: LOW-LIGHT-LEVEL THERMOELECTRIC COOLED MEASUREMENT NIR-PMT UNIT IN THE NIR H10330B-25/-45/-75 Wavelength Range: 950 nm to 1200 nm / 950 nm to 1400 nm / 950 nm to 1700 nm, TE Cooled, High Speed, Suitable for Photon Counting Left: NIR-PMT Main Unit, Right: Controller
|
Original
|
PDF
|
H10330B-25/-45/-75
H10330B
SE-164
TPMO1056E02
B1201
H10330B-75
|
Untitled
Abstract: No abstract text available
Text: Low Distortion, 3.2 GHz, RF DGA ADA4961 Data Sheet VCC3 VCC2 VCC1 PM PWUP FUNCTIONAL BLOCK DIAGRAM 24 23 22 21 20 19 EXPOSED PAD VIN+ VIN– ADA4961 17 VOUT+ 2 0dB TO 21dB ATTEN +15dB 16 VOUT– 3 18 DNC 15 DNC 11 12 13 6 NOTES 1. DNC = DO NOT CONNECT. DO NOT CONNECT TO THIS PIN.
|
Original
|
PDF
|
ADA4961
MO-220-WGGD.
4-12-2012-A
24-Lead
CP-24-7)
ADA4961ACPZN-R7
EV-ADA4961SDP1Z
D12454-0-12/14
|
Untitled
Abstract: No abstract text available
Text: LOW-LIGHT-LEVEL THERMOELECTRIC COOLED MEASUREMENT NIR-PMT UNIT IN THE NIR H12694-25/-45/-75 Wavelength Range: 950 nm to 1200 nm / 950 nm to 1400 nm / 950 nm to 1700 nm, TE Cooled, High Speed, Suitable for Photon Counting, Gate Function Normally OFF Left: NIR-PMT Unit, Right: Controller
|
Original
|
PDF
|
H12694-25/-45/-75
H12694
SE-164
TPMH1346E01
B1201
|
smr-3822
Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM
|
Original
|
PDF
|
Jun08
smr-3822
x-band power transistor 50W
SMR-5550
x-band mmic lna
HF multicoupler
GAAS FET AMPLIFIER x-band 10w
x-band microwave fet
SM4T mixer
PALLET FM AMPLIFIER 300 WATTS
x-band limiter
|
C9940-02
Abstract: No abstract text available
Text: LOW-LIGHT-LEVEL NIR NEAR INFRARED:1.4 µm/1.7 µm MEASUREMENT PHOTOMULTIPLIER TUBES R5509-43/R5509-73 OF NIR and EXCLUSIVE COOLERS OVER VIEW FEATURES Hamamatsu near infrared photomultiplier tubes (NIR-PMT) R550943 and -73 have photocathodes with extended spectral response
|
Original
|
PDF
|
R5509-43/R5509-73
R550943
R5509-43
R5509-73
SE-171-41
TPMH1284E05
C9940-02
|
Untitled
Abstract: No abstract text available
Text: , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 C4S1 Pha*9 Control Sea 500-1900 Vol* C4S1 PhM* Control SCR 1400-1500 An?W6«/500.1800 Vote QrtQhd/dt DHghoW* D Hetmeto Packaging Q Bio«tont Suiga and ft Rtflng*
|
Original
|
PDF
|
20Vdc.
|
5440
Abstract: No abstract text available
Text: 2013-2장 2012.11.22 5:30 PM 페이지37 G4-1.25G Mac 1 JETPDF 2400DPI 175LPI T CONDUCTIVE POLYMER ALUMINUM ELECTROLYTIC CAPACITORS FA Chip type, With Conductive Polymer Series Hi-CAP •Low ESR, high ripple current ·Designed for surface mounting on high density PC board
|
Original
|
PDF
|
100kHz)
120Hz,
120Hz
10kHz
500kHz
5440
|
NCP2993FCT2G
Abstract: NCP2993 499BM-01
Text: NCP2993 1.3 Watt Audio Power Amplifier with Selectable Fast Turn On Time The NCP2993 is an audio power amplifier designed for portable communication device applications such as mobile phone applications. The NCP2993 is capable of delivering 1.3 W of continuous average power to an 8.0 W BTL load from a 5.0 V power
|
Original
|
PDF
|
NCP2993
NCP2993/D
NCP2993FCT2G
499BM-01
|
2-1450330-8
Abstract: PMBUS 52986-2679
Text: Embedded Power for Business-Critical Continuity Rev.06.14.11_47 UFE / UFR Series 1 of 6 UFE / UFR Series Up to 6000 Watts Total Power: Input Voltage: # of Outputs: Output: Up to 6000 W 85 - 264 Vac Single + Aux 24 V & 48 V Special Features • Rack mounted chassis 1U, 19”
|
Original
|
PDF
|
EN55022
UFE2000-96S48J
UFE1300-96S24J
2-1450330-8
PMBUS
52986-2679
|
UFR6000-00J
Abstract: power supply connector EN61000-4-5 SR-332 EN61000-3-3 EN61000-4-2 EN61000-4-4
Text: Embedded Power for Business-Critical Continuity Rev.02.23.10_154 UFE / UFR Series 1 of 6 UFE / UFR Series Up to 6000 Watts Total Power: Input Voltage: # of Outputs: Output: Up to 6000 W 85 - 264 Vac Single + Aux 24 V & 48 V Special Features • Rack mounted chassis 1U, 19”
|
Original
|
PDF
|
EN55022
UFE2000-96S48J
UFE1300-96S24J
UFR6000-00J
power supply connector
EN61000-4-5
SR-332
EN61000-3-3
EN61000-4-2
EN61000-4-4
|
BGU7073
Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: 近赤外用 1.4 m/1.7μm 光電子増倍管 近赤外 微弱光計測 NIR-PMT R5509-43/R5509-73 概要 特長 近赤外用光電子増倍管(NIR-PMT) R5509シリーズは光電子増倍管の 感度波長範囲の限界であった1.1 μmを1.4 μmまたは1.7 μmにまで拡
|
Original
|
PDF
|
R5509-43/R5509-73
R5509ã
R5509-43ã
R5509-73ã
TPMH1284J02
|
|
|
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
|
Original
|
PDF
|
MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
|
Untitled
Abstract: No abstract text available
Text: Embedded Power for Business-Critical Continuity Rev.3.20.09_154 UFE / UFR Series of 6 UFE / UFR Series Up to 6000 Watts Total Power: Input Voltage: # of Outputs: Output: Up to 6000 W 85 - 264 Vac Single + Aux 24 V & 48 V Special Features • Rack mounted chassis 1U, 19”
|
Original
|
PDF
|
EN55022
UFE2000-96S48J
UFE1300-96S24J
|
EMERSON rectifier
Abstract: molex 52986 52316-2619 ufe2000-96s48pj EN61000-3-3 EN61000-4-2 EN61000-4-4 EN61000-4-5 SR-332 berg connector 36 pin
Text: Embedded Power for Business-Critical Continuity Rev.2.13.09_154 UFE / UFR Series of 6 UFE / UFR Series Up to 6000 Watts Total Power: Input Voltage: # of Outputs: Output: Up to 6000 W 85 - 264 Vac Single + Aux 24 V & 48 V Special Features • Rack mounted chassis 1U, 19”
|
Original
|
PDF
|
EN55022
UFE2000-96S48J
UFE1300-96S24J
EMERSON rectifier
molex 52986
52316-2619
ufe2000-96s48pj
EN61000-3-3
EN61000-4-2
EN61000-4-4
EN61000-4-5
SR-332
berg connector 36 pin
|
EMERSON rectifier
Abstract: molex 52986 EN61000-3-3 EN61000-4-2 EN61000-4-4 EN61000-4-5 SR-332 51939
Text: Embedded Power for Business-Critical Continuity Rev.8.26.09_154 UFE / UFR Series of 6 UFE / UFR Series Up to 6000 Watts Total Power: Input Voltage: # of Outputs: Output: Up to 6000 W 85 - 264 Vac Single + Aux 24 V & 48 V Special Features • Rack mounted chassis 1U, 19”
|
Original
|
PDF
|
EN55022
UFE2000-96S48J
UFE1300-96S24J
EMERSON rectifier
molex 52986
EN61000-3-3
EN61000-4-2
EN61000-4-4
EN61000-4-5
SR-332
51939
|
T520W477M006A
Abstract: T520B227M006A T520A476M006A T520A107M004A T520T107M006A mexico Ceramic capacitor 105 T520C227M006ATE025 T2015
Text: KEMET Organic Capacitor KO-CAP T520 Series Polymer Tantalum Overview The KEMET Organic Capacitor (KO-CAP) is a tantalum capacitor with a Ta anode and Ta2O5 dielectric. A conductive organic polymer replaces the traditionally used MnO2 as the cathode plate of the capacitor. This results in very low ESR and improved
|
Original
|
PDF
|
|
CMP-01
Abstract: No abstract text available
Text: CMP-01/883 pm D FAST PRECISION COMPARATOR P r e c i s i o n M o n o l i t h i c s In c . 1.0 SCOPE This specification covers the detail requirements for a monolithic fast precision voltage comparator. It is highly recommended that this data sheet be used as a baseline for new military or
|
OCR Scan
|
PDF
|
CMP-01/883
CMP-01J/883
CMP-01
Z/883
MIL-M-38510)
CMP-01/883rT
|
Diode BFE
Abstract: Diode P 619
Text: Series B48-2T, B48-2 35-50 Amp • DIODE Modules Single and Three Phase Circuits Up to 1600 Volt Blocking Standard CRYZX3M Control over power Siigfe- and thiee-phase diode cin u is com e ±1 a pan el m ount package that piDvües 2500 Vm s s o it b n ftom the
|
OCR Scan
|
PDF
|
B48-2T,
B48-2
E72445)
120Vac)
480Vac)
240Vac)
530Vac)
380Vac)
D-66687
Diode BFE
Diode P 619
|
pml 017
Abstract: zf7b cmp01c CMP-01 CMP-01C pmi CMP01 F5VL sk25c CMP-01 dil 14 CMP-01E
Text: CMP-01 2 wæïk & PMI 'S'* U — ? - e , m m A t l , ' y v / i n y r , '-'-s . • » 7 te Æ t® 9 là d U i4 . y - f X f c .t C f / 'y -c m fF w m it2 m m < o ií^ ,5 v *L *75m A CMP 01 (± 111, 106, 710 M IL -ST D 8 8 3 B ^ ^ S Í S Í n ( S Í « i ; / 883 ^ ® g d , 160 ISÍRSI^ — V 1 Vnpfc ±
|
OCR Scan
|
PDF
|
S-10mV
NS-10mV
CMP-01GR
-18VS
vS-10mV
vS-10mV
pml 017
zf7b
cmp01c
CMP-01
CMP-01C
pmi CMP01
F5VL
sk25c
CMP-01 dil 14
CMP-01E
|
2SA1224
Abstract: NEC JAPAN 3167 1S955 NE74014 NE90100 NE90115
Text: NEC/ 5bE D CALIFORNIA NEC bM27M14 0005515 bMT MNECC T - 3 U 'L 3 PNP MEDIUM POWER MICROWAVE TRANSISTOR NE90100 NE90115 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDW IDTH PRODUCT: fr = 2.5 GHz The NE901 Series o f PNP silicon epitaxial transistors is de
|
OCR Scan
|
PDF
|
00GS512
NE90100
NE90115
NE74014
NE901
NE90115
2SA1224
NEC JAPAN 3167
1S955
NE74014
|
2SC1253
Abstract: E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733
Text: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH PRO DU CT: fr = 2.2 GHz The NE740 series of NPN silicon transistors is designed for
|
OCR Scan
|
PDF
|
MS7414
NE74000
NE74014
NE74020
NE740
E90115
NE74014
2SC12579
2SC1253
E74020
VHF power TRANSISTOR PNP TO-39
TRANSISTOR 2SC 733
|
