EC175u1800d116136KM8
Abstract: No abstract text available
Text: Data Sheet Leclanche Capacitors 48, Avenue de Grandson 1400 Switzerland Tel.: +41 24 445 66 88 Fax : +41 24 445 66 89 e-mail: stephen.fugate@Lcap.ch www.Lcap.ch Film Capacitor Type: EC175µ1800d116136KM8 Preliminary date: 23/05/2013 16:01:00 issued by: db
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EC175Â
1800d116136KM8
x10-4
10kHz
EC175u1800d116136KM8
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XSZBCR05
Abstract: XUSLBR5A1200 XUSLBQ6A0600 XSZBCT05 XUSLBR5A0760 XUSLBQ6A0280 XUSLDMQ6A0320 702-362 XUSLBR5A0520 XUSLDMY5A1400
Text: 1468-2012.qxp:QuarkCatalogTempNew 9/7/12 3:43 PM Page 1468 PASSIVE & ACTIVE OPTOELECTRONICS COMMUNICATION & SAFETY DEVICES POWER ENCLOSURES INTERCONNECT TEST & MEASUREMENT 15 Safety Light Curtains Preventa Safety Light Curtains Preventa™ XUSL Light Curtains provide point of operation guarding for large areas without the need for gates or guards, allowing excellent visibility of the machine or process and free access to the machine while providing protection
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XSZBCR05
XSZBCR05
XSZBCR10
XSZBCR15
XSZBCR30
XSZBCT05
XSZBCT10
XSZBCT15
XSZBCT30
XUSLBR5A1200
XUSLBQ6A0600
XUSLBR5A0760
XUSLBQ6A0280
XUSLDMQ6A0320
702-362
XUSLBR5A0520
XUSLDMY5A1400
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NX3008
Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1
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AON2240
AON2401
AON2405
AON2406
AON2407
AON2408
AON2409
AON2410
AON2420
AON2701
NX3008
IRLHS6242
SiA431DJ
SSM6J503NU
IRLHS2242
DMN3730UFB4
FDMA1028NZ
FDMA3028N
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82074
Abstract: 12x13 S0233
Text: 1 I n t e r n a t io n a l R e c t if ie r Fast Recovery Diodes •F5M 2 Pm VRRM ff(AV)«tc SOHi (V) Number W ro «OHi (A) (4) vnuoifM M (A) Rtfuc (15) tir row) <"S) Fix-oflU - .- - NOMS Numb« Cue Styl«, (Cut Oiidim) (1) DUcrate SD203N04S10PV SD203N08S10PV
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SD203R04S10PV.
SD203NO4SIOMV.
SD203N
04S10PBV.
82074
12x13
S0233
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2SC1594
Abstract: NE77320 33B5 NE77300 NE77310 NE77320T S21E S22E J25-26 1400 88 pm
Text: N E C / CALIFORNIA b42741M 1SE D 0 0 0 1 3 LjE 3 NE77300 NE77310 NE77320 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 2 WATTS POWER OUTPUT CLASS C AT 2 GHz The NE773 series of NPN medium power silicon transistors Is especially designed for broadband VHF and UHF amplifiers
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b42741M
00013LjE
NE77300
NE77310
NE77320
NE773
NE77310)
stud-strlpline55
2SC1594
NE77320
33B5
NE77320T
S21E
S22E
J25-26
1400 88 pm
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CMP-01
Abstract: No abstract text available
Text: CMP-01/883 pm D FAST PRECISION COMPARATOR P r e c i s i o n M o n o l i t h i c s In c . 1.0 SCOPE This specification covers the detail requirements for a monolithic fast precision voltage comparator. It is highly recommended that this data sheet be used as a baseline for new military or
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CMP-01/883
CMP-01J/883
CMP-01
Z/883
MIL-M-38510)
CMP-01/883rT
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PDF
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PMB40-24T0512
Abstract: No abstract text available
Text: T40 Series 40W SINGLE, DUAL & TRIPLE OUTPUT DC/DC HIGH PERFORMANCE Features • 2:1 input range • Efficiency to 88% • Six-sided shield • 2.6 x 3.0 x 0.4 inches • On/Off control • Over current protection • International safety standards Specifications
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78VDC.
34VDC.
PMB40-24T0512
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2SC1593
Abstract: 2SC1041 GE-64 NEC k 2134 transistor NE64300 NE64310 NE64320 V020 transistor BU 189
Text: N E C/. C A L I F O R N I A b427414 1SE D 0001343 T i ► rF' î NE64300 NE64310 NE64320 NPN MEDIUM POWER MICROWAVE TRANSISTOR r t FEATURES DESCRIPTION AND APPLICATIONS • H IG H O U T P U T P O W E R : 900 mW at 2 G Hz Th e NE643 series of NPN silicon medium power transistors is
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b427414
NE64300
NE64310
NE64320
NE643
NE64300)
NE64310)
NE64320)
2SC1593
2SC1041
GE-64
NEC k 2134 transistor
NE64320
V020
transistor BU 189
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PDF
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PMB40-24T0512
Abstract: PMB40-24S12
Text: T40 Series 4 0 W S I N G L E , D U A L & T R I P L E O U T P U T D C / D C C O N V E R T E R Features • 2:1 input range • Efficiency to 88% • Six-sided shield • 2.6 x 3.0 x 0.4 inches • On/Off control • Over current protection • International safety standards
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78VDC.
34VDC.
185kHz
MIL-HDBK-217F
PMB40-24T0512
PMB40-24S12
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Untitled
Abstract: No abstract text available
Text: Film Capacitors CXPLP 90-38.0 t5 K date: 12.11.2009 12:33 issued by: hsb version: 1.0 Technical data µF ± 10% V V V Ws A V/µs m x10-4 nH Pmax @ case Imax 32,1 W 25,0 W 17,9 W 10,7 W 40 °C 50 °C 60 °C 70 °C 113,4 A 100,0 A 84,5 A 65,5 A UNmax @ case
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x10-4
M8x20+
10kHz
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H10330B-75
Abstract: No abstract text available
Text: LOW-LIGHT-LEVEL THERMOELECTRIC COOLED MEASUREMENT NIR-PMT UNIT IN THE NIR H10330B-25/-45/-75 Wavelength Range: 950 nm to 1200 nm / 950 nm to 1400 nm / 950 nm to 1700 nm, TE Cooled, High Speed, Suitable for Photon Counting Left: NIR-PMT Main Unit, Right: Controller
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H10330B-25/-45/-75
H10330B
SE-164
TPMO1056E02
B1201
H10330B-75
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Untitled
Abstract: No abstract text available
Text: Low Distortion, 3.2 GHz, RF DGA ADA4961 Data Sheet VCC3 VCC2 VCC1 PM PWUP FUNCTIONAL BLOCK DIAGRAM 24 23 22 21 20 19 EXPOSED PAD VIN+ VIN– ADA4961 17 VOUT+ 2 0dB TO 21dB ATTEN +15dB 16 VOUT– 3 18 DNC 15 DNC 11 12 13 6 NOTES 1. DNC = DO NOT CONNECT. DO NOT CONNECT TO THIS PIN.
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ADA4961
MO-220-WGGD.
4-12-2012-A
24-Lead
CP-24-7)
ADA4961ACPZN-R7
EV-ADA4961SDP1Z
D12454-0-12/14
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Untitled
Abstract: No abstract text available
Text: LOW-LIGHT-LEVEL THERMOELECTRIC COOLED MEASUREMENT NIR-PMT UNIT IN THE NIR H12694-25/-45/-75 Wavelength Range: 950 nm to 1200 nm / 950 nm to 1400 nm / 950 nm to 1700 nm, TE Cooled, High Speed, Suitable for Photon Counting, Gate Function Normally OFF Left: NIR-PMT Unit, Right: Controller
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H12694-25/-45/-75
H12694
SE-164
TPMH1346E01
B1201
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Untitled
Abstract: No abstract text available
Text: NIR NEAR INFRARED PHOTOMULTIPLIER TUBES R5509-42,-72 PATENT PENDING For NIR (to 1.4 µm, to 1.7 µm) Fast time response, High sensitivity Hamamatsu near infrared photomultiplier tubes (NIR-PMT) R5509-42 and -72 have newly developed photocathodes with extended spectral response ranges to 1.4 µm or 1.7 µm
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R5509-42
S-164-40
TPMH1185E02
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Diode BFE
Abstract: Diode P 619
Text: Series B48-2T, B48-2 35-50 Amp • DIODE Modules Single and Three Phase Circuits Up to 1600 Volt Blocking Standard CRYZX3M Control over power Siigfe- and thiee-phase diode cin u is com e ±1 a pan el m ount package that piDvües 2500 Vm s s o it b n ftom the
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B48-2T,
B48-2
E72445)
120Vac)
480Vac)
240Vac)
530Vac)
380Vac)
D-66687
Diode BFE
Diode P 619
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Untitled
Abstract: No abstract text available
Text: 低失真3.2 GHz RF DGA ADA4961 产品特性 VCC4 VCC3 VCC2 VCC1 PM PWUP 功能框图 24 23 22 21 20 19 ADA4961 EXPOSED PAD 17 VOUT+ 0dB TO 21dB ATTEN +15dB 16 VOUT– 3 8 9 10 11 12 13 6 14 DNC NOTES 1. DNC = DO NOT CONNECT. DO NOT CONNECT TO THIS PIN. 12454-001
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ADA4961
MO-220-WGGD.
4-12-2012-A
CP-24-7)
ADA4961ACPZN-R7
EV-ADA4961SDP1Z
D12454sc
CP-24-7
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PDF
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Untitled
Abstract: No abstract text available
Text: 1570 Reader's Spreads pg1-188 3/26/07 2:27 PM Page 86 MLT resistors linear positive tempco melf resistor features • • • • • Twenty-five specifiable temperature coefficients Standard resistance sizes Meets or exceeds EIAJ-8011, EIA-PDP-100 Marking: Gray body color
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EIAJ-8011,
EIA-PDP-100
2005/95/EC
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smr-3822
Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM
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Jun08
smr-3822
x-band power transistor 50W
SMR-5550
x-band mmic lna
HF multicoupler
GAAS FET AMPLIFIER x-band 10w
x-band microwave fet
SM4T mixer
PALLET FM AMPLIFIER 300 WATTS
x-band limiter
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Secowest Italia Spa
Abstract: SD203 Secowest 200G SD103 SD403 SD203 - 12 D697
Text: SECOUEST ITALIA SPA 54E D • 0111407 OQOQQQE b ■ T ~ O Z "OÍ AVAILABLE DEVICES ' "SUid" typed - . ' ' t„„ code t max. ft ¡; ^ / -! »* Voilage Range (V} W%ÉM •Í^vJÍ'ÁÍÍ (2) . 200 400 600 SOoftôûG 120O|14GO 11600 1:800 20002200 02 04 06 08 1 10 12 I 14 16 18 20 22
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SD103k-
SD803
SD603,
SD803
SD203,
SD253,
SD303,
SD403
SD103,
SD153
Secowest Italia Spa
SD203
Secowest
200G
SD103
SD403
SD203 - 12
D697
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PDF
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PME271Y447M
Abstract: paper impregnated PHE840M PHE840MZ7100MF11R06L2 PME271Y410MR30 .022 uf mmk capacitors PME271Y PHE840MY7100MD16R06L2 C4EEH MMK5224K63J01L4
Text: 1810-2012.qxp:QuarkCatalogTempNew 9/18/12 2:55 PM Page 1810 TEST & MEASUREMENT 21 Film Capacitors PME271Y — EMI Suppressor, Class Y2, Metallized Paper L ᭤ ᭤ ᭤ ᭤ ᭤ ᭤ ᭤ ᭤ ᭤ ᭤ ᭤ B H INTERCONNECT ENCLOSURES ød PHE850 — EMI Suppressor,
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PME271Y
PME271Y410MR30
PME271Y422MR30
PME271Y447MR30
PME271Y510MR30
C4EEHNX7100BAUK
PME271Y447M
paper impregnated
PHE840M
PHE840MZ7100MF11R06L2
.022 uf mmk capacitors
PHE840MY7100MD16R06L2
C4EEH
MMK5224K63J01L4
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PDF
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feature of ic UM 66
Abstract: siemens SH100 SH100 ck SH100G IC UM 66 APD 10ghz APD -25dbm 10ghz CPGA APD Arrays SH100
Text: Custom ICs B6HF - Bipolar Technology for all HF Applications • 6 inch wafers • 17 mask layers max. • 3 layer metallization: TiN/AlSiCu/TiN sandwich with thungsten plugs • 0.4 micron minimum effective emitter width • Double poly selfaligned emitter/base complex:
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25GHz,
10GHz,
feature of ic UM 66
siemens SH100
SH100 ck
SH100G
IC UM 66
APD 10ghz
APD -25dbm 10ghz
CPGA
APD Arrays
SH100
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PDF
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pml 017
Abstract: zf7b cmp01c CMP-01 CMP-01C pmi CMP01 F5VL sk25c CMP-01 dil 14 CMP-01E
Text: CMP-01 2 wæïk & PMI 'S'* U — ? - e , m m A t l , ' y v / i n y r , '-'-s . • » 7 te Æ t® 9 là d U i4 . y - f X f c .t C f / 'y -c m fF w m it2 m m < o ií^ ,5 v *L *75m A CMP 01 (± 111, 106, 710 M IL -ST D 8 8 3 B ^ ^ S Í S Í n ( S Í « i ; / 883 ^ ® g d , 160 ISÍRSI^ — V 1 Vnpfc ±
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S-10mV
NS-10mV
CMP-01GR
-18VS
vS-10mV
vS-10mV
pml 017
zf7b
cmp01c
CMP-01
CMP-01C
pmi CMP01
F5VL
sk25c
CMP-01 dil 14
CMP-01E
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PDF
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C9940-02
Abstract: No abstract text available
Text: LOW-LIGHT-LEVEL NIR NEAR INFRARED:1.4 µm/1.7 µm MEASUREMENT PHOTOMULTIPLIER TUBES R5509-43/R5509-73 OF NIR and EXCLUSIVE COOLERS OVER VIEW FEATURES Hamamatsu near infrared photomultiplier tubes (NIR-PMT) R550943 and -73 have photocathodes with extended spectral response
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R5509-43/R5509-73
R550943
R5509-43
R5509-73
SE-171-41
TPMH1284E05
C9940-02
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PDF
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SA3601
Abstract: SA3601W
Text: INTEGRATED CIRCUITS SA3601 Low voltage dual-band RF front-end Product specification Supersedes data of 1999 Nov 09 Philips Semiconductors 2001 Feb 20 Philips Semiconductors Product specification Low voltage dual-band RF front-end SA3601 DESCRIPTION APPLICATIONS
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SA3601
SA3601
SA3601W
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