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    13W TRANSISTOR Search Results

    13W TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    13W TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD 13W

    Abstract: CFL inverter circuit schematic diagram 230v CFL circuit diagram cfl circuit diagram cfl ballast philips cfl 13W 13w cfl circuit led lamp 230v circuit diagram schematic lamp ballast BALLAST CFL
    Text: APPLICATION NOTE CFL 13W demo PCB with UBA2021 for integrated lamp-ballast designs AN99066 replaces previous version AN98091 Philips Semiconductors Philips Semiconductors CFL 13W demo PCB with UBA2021 for Integrated lamp-ballast designs Application Note


    Original     		PDF UBA2021 AN99066 AN98091) PR38922 PR39001) 230Vrms PHU2N60 PHU2N50) TRANSISTOR SMD 13W CFL inverter circuit schematic diagram 230v CFL circuit diagram cfl circuit diagram cfl ballast philips cfl 13W 13w cfl circuit led lamp 230v circuit diagram schematic lamp ballast BALLAST CFL

    MAAPGM0077-DIE

    Abstract: No abstract text available
    Text: Amplifier, Power, 13W 0.7-2.5 GHz MAAPGM0077-DIE Rev A Preliminary Datasheet Features ♦ 13 Watt Saturated Output Power Level ♦ Variable Drain Voltage 6-10V Operation ♦ MSAG Process Description The MAAPGM0077-DIE is a 2-stage 13W power amplifier with onchip bias networks. This product is fully matched to 50 ohms on both


    Original     		PDF MAAPGM0077-DIE MAAPGM0077-DIE

    POET0078

    Abstract: AS1113 POET0072 MO-220-VHHC-2 POET00 IEC61000-4 JESD22-A114 CISPR22 2.5 V, 20 W DC-DC Converter with Synchronous Rectification ethernet transformer center tap
    Text: Data Sheet AS1113 13W Powered Device with Integrated DC-DC Controller Revision 1.6, October 2007 DATASHEET AS1113 CONTENTS General


    Original     		PDF AS1113 2002/95/EC POET0078 AS1113 POET0072 MO-220-VHHC-2 POET00 IEC61000-4 JESD22-A114 CISPR22 2.5 V, 20 W DC-DC Converter with Synchronous Rectification ethernet transformer center tap

    MAAPGM0077-DIE

    Abstract: AN3016 AN3019 MAAP-000077-PKG001 MAAP-000077-SMB001 MAAP-000077-SMB004
    Text: Amplifier, Power, 13W 0.7-2.5 GHz MAAPGM0077-DIE Rev B Preliminary Datasheet Features ♦ 13 Watt Saturated Output Power Level ♦ Variable Drain Voltage 6-10V Operation ♦ MSAG Process Description The MAAPGM0077-DIE is a 2-stage 13W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It


    Original     		PDF MAAPGM0077-DIE MAAPGM0077-DIE AN3016 AN3019 MAAP-000077-PKG001 MAAP-000077-SMB001 MAAP-000077-SMB004

    capacitor 4n7 6kv

    Abstract: 230v ac 5v adapter circuit schematic fqp33n10 equivalent 230V AC primary to 12V, 2A secondary transformer 9162 1.2V regulator transformer 230v to 35v BC184L equivalent QFP33N10 zoom 505 ii schematic 555 ic is output 230v ac
    Text: Design Example Report Title 13W Power Supply using TOP242P Input: 195 – 265 VAC Specification Output: 3.3V / 428mA, 2.5V / 215mA, 5V / 985mA, 6.6V / 668mA, 12V / 55mA Application Set Top Box Author Power Integrations Applications Department Document Number


    Original     		PDF OP242P 428mA, 215mA, 985mA, 668mA, DER-23 EN55022) capacitor 4n7 6kv 230v ac 5v adapter circuit schematic fqp33n10 equivalent 230V AC primary to 12V, 2A secondary transformer 9162 1.2V regulator transformer 230v to 35v BC184L equivalent QFP33N10 zoom 505 ii schematic 555 ic is output 230v ac

    hatfield attenuator

    Abstract: RF MOSFET MODULE RA13H1317M RA13H1317M-01 RA13H1317M-E01 metwn
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H1317M 135-175MHz 13W 12.5V MOBILE RADIO DESCRIPTION The RA13H1317M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to 175-MHz


    Original     		PDF RA13H1317M 135-175MHz RA13H1317M 13-watt 175-MHz hatfield attenuator RF MOSFET MODULE RA13H1317M-01 RA13H1317M-E01 metwn

    AS1135

    Abstract: schematic diagram 48V power supply Poe QFN PACKAGE thermal resistance smps isolated 24v output 30w JESD22-A114 11-LVMODE led driver pwm 350mA "power sourcing equipment"
    Text: Datasheet AS1135 13W/30W 802.3af/at Draft3.3 PoE Powered Device with Integrated DC-DC Controller Version 1.25 December 2008 DATASHEET Preliminary AS1135 TABLE OF CONTENTS TABLE OF CONTENTS . 2


    Original     		PDF AS1135 3W/30W 2002/95/EC AS1135 schematic diagram 48V power supply Poe QFN PACKAGE thermal resistance smps isolated 24v output 30w JESD22-A114 11-LVMODE led driver pwm 350mA "power sourcing equipment"

    RA13H4452M-01

    Abstract: RA13H4452M
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4452M 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


    Original     		PDF RA13H4452M 440-520MHz RA13H4452M 13-watt 520-MHz RA13H4452M-01

    rf power amplifier circuit by 400-470mhz

    Abstract: RA13H4047M RA13H4047M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4047M 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4047M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		PDF RA13H4047M 400-470MHz RA13H4047M 13-watt 470-MHz rf power amplifier circuit by 400-470mhz RA13H4047M-01

    RA13H8891MA

    Abstract: RA13H8891MA-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to


    Original     		PDF RA13H8891MA 889-915MHz RA13H8891MA 13-watt 915-MHz RA13H8891MA-01

    H11S

    Abstract: RA13H8891MB-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to


    Original     		PDF RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz H11S RA13H8891MB-01

    H11S

    Abstract: RA13H8891MB-01 RA13H8891MB-E01 MOSFET Power Amplifier Module 900Mhz
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MB 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MB is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 880- to


    Original     		PDF RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz H11S RA13H8891MB-01 RA13H8891MB-E01 MOSFET Power Amplifier Module 900Mhz

    Untitled

    Abstract: No abstract text available
    Text: PC8610 Integrated Host Processor Hardware Specifications Datasheet - Preliminary Specification Features • • • • • • • • • • • • • e600 Power Architecture Processor Core PD Maximum 16W at 1.33 GHz VDD = 1.025V ; 13W at 1.066 GHz (VDD = 1.00V)


    Original     		PDF PC8610 0926D

    RA13H4047M-E01

    Abstract: RA13H4047M RA13H4047M-01 rf power amplifier circuit by 400-470mhz
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4047M 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4047M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		PDF RA13H4047M 400-470MHz RA13H4047M 13-watt 470-MHz RA13H4047M-E01 RA13H4047M-01 rf power amplifier circuit by 400-470mhz

    hatfield attenuator

    Abstract: RF MOSFET MODULE RA13H3340M RA13H3340M-01 RA13H3340M-E01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M 330-400MHz 13W 12.5V MOBILE RADIO DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz


    Original     		PDF RA13H3340M 330-400MHz RA13H3340M 13-watt 400-MHz hatfield attenuator RF MOSFET MODULE RA13H3340M-01 RA13H3340M-E01

    RA13H4452M-01

    Abstract: hatfield attenuator MITSUBISHI RF module RF MOSFET MODULE RA13H4452M RA13H4452M-E01 RF POWER amplifier 10 watt
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4452M 440-520MHz 13W 12.5V MOBILE RADIO DESCRIPTION The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to 520-MHz


    Original     		PDF RA13H4452M 440-520MHz RA13H4452M 13-watt 520-MHz RA13H4452M-01 hatfield attenuator MITSUBISHI RF module RF MOSFET MODULE RA13H4452M-E01 RF POWER amplifier 10 watt

    H11S

    Abstract: RA13H8891MA RA13H8891MA-01 RA13H8891MA-E01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H8891MA 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 889- to


    Original     		PDF RA13H8891MA 889-915MHz RA13H8891MA 13-watt 915-MHz H11S RA13H8891MA-01 RA13H8891MA-E01

    RA13H1317M

    Abstract: RA13H1317M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H1317M 135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H1317M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 135- to


    Original     		PDF RA13H1317M 135-175MHz RA13H1317M 13-watt 175-MHz RA13H1317M-01

    RA13H3340M

    Abstract: RA13H3340M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M 330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to


    Original     		PDF RA13H3340M 330-400MHz RA13H3340M 13-watt 400-MHz RA13H3340M-01

    POET0072

    Abstract: No abstract text available
    Text: AS1113 — 13W Powered Device with Integrated DC-DC Controller GENERAL DESCRIPTION FEATURES The AS1113 is a single-chip, highly integrated CMOS solution for Power over Ethernet PoE . Applications include Voice over IP (VoIP) Phones, Wireless LAN Access Point, Security and Web


    Original     		PDF AS1113 AS1113 2002/95/EC POET0072

    RA13H4047M

    Abstract: RA13H4047M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4047M RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4047M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to


    Original     		PDF RA13H4047M 400-470MHz RA13H4047M 13-watt 470-MHz RA13H4047M-101

    2sc2783

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2783 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2783 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. ia4±a5 Output Power : Po = 40W Min. (f=470MHz, V cc = 12.5V, Pi = 13W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan     		PDF 2SC2783 470MHz, 2-13C1A 961001EAA2' 2sc2783

    2SC2783

    Abstract: VC-80 Series uhf 13W amplifier
    Text: TOSHIBA 2SC2783 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2783 UHF BAND POWER AMPLIFIER APPLICATIONS • Unit in mm 1R4±Q5 Output Power : Po = 40W Min. (f = 470MHz, V e e = 12.5V, Pi = 13W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL


    OCR Scan     		PDF 2SC2783 470MHz, 2-13C1A 470MHz 961001EAA2' 2SC2783 VC-80 Series uhf 13W amplifier

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC3133 NPN EPITAXIAL PLANAR TYPE DISCRIPTION 2SC3133 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in H F band mobile radio applications. FEATURES • High power gain: Gpe > 1 4 d B • @f = 27M H z, V cc = 12V , P0 = 13W


    OCR Scan     		PDF 2SC3133 2SC3133