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    13T TRANSISTOR Search Results

    13T TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    13T TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NEM0899F01-30

    Abstract: 13t transistor broadband impedance transformation
    Text: High Power N-Channel Silicon MOSFET For Broadcast / Transmitters NEM0899F01-30 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: 100 Watts PACKAGE OUTLINE F01 • HIGH GAIN: Linear Gain = 12 dB • LOW INTERMODULATION DISTORTION 45˚ 45˚ G2


    Original     		PDF NEM0899F01-30 NEM0899F01-30 16AWG 18AWG 24-Hour 13t transistor broadband impedance transformation

    NEM0899F01-30

    Abstract: 13t transistor broadband impedance transformation
    Text: High Power N-Channel Silicon MOSFET For Broadcast / Transmitters NEM0899F01-30 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH OUTPUT POWER: 100 Watts PACKAGE OUTLINE F01 • HIGH GAIN: Linear Gain = 12 dB • LOW INTERMODULATION DISTORTION 45˚ 45˚ • HIGH DYNAMIC RANGE


    Original     		PDF NEM0899F01-30 NEM0899F01-30 16AWG 18AWG 24-Hour 13t transistor broadband impedance transformation

    Untitled

    Abstract: No abstract text available
    Text: BC847PN BC847PN Complementary General Purpose Si-Epitaxial PlanarTransistors Komplementäre Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN/PNP NPN/PNP Version 2005-07-06 ±0.1 5 4 ±0.1 6 ±0.1 0.9 1 2 2.1 Type Code 1.25±0.1 2 2 x 0.65 3 2.4


    Original     		PDF BC847PN OT-363 UL94V-0

    MARKING CODE 13t sot363

    Abstract: transistor marking T2 transistor bt2 sot363 13t 13t transistor BC847PN marking 13t MARKING bt1 sot363 BC847PN SOT363 SOT363 13T MARKING
    Text: BC847PN BC847PN Complementary General Purpose Si-Epitaxial PlanarTransistors Komplementäre Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN/PNP NPN/PNP Version 2005-07-06 ±0.1 2 2 x 0.65 4 1 2 2.1 Type Code 1.25±0.1 5 ±0.1 6 0.9±0.1 3 2.4


    Original     		PDF BC847PN OT-363 UL94V-0 MARKING CODE 13t sot363 transistor marking T2 transistor bt2 sot363 13t 13t transistor BC847PN marking 13t MARKING bt1 sot363 BC847PN SOT363 SOT363 13T MARKING

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors • Product specification bb53^31 OOBOObH <13T « A P X VHF push-pull power MOS transistor BLF368 N AMER PHILIPS/DISCRETE bTE PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures


    OCR Scan     		PDF BLF368 OT262 MCA950

    Untitled

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO LTD SSE D • 7^07*41 000CH71 13T » S A K J Silicon NPN Triple Diffused Planar ^ ☆Switching Transistor SC3890 Application Example : S S - fs e Outline Drawing 4 . . FM20 Switching Regulator and General Purpose Electrical Characteristics


    OCR Scan     		PDF 000CH71 SC3890 2SC3890 10Omax 100max 400mm MT-25 T0220)

    180x180

    Abstract: No abstract text available
    Text: SEMTECH CORP SflE D • ô 13T 1 3 T 0D03M5fl 1Q1 « S E T COMPLEMENTARY DARLINGTON TRANSISTORS COLLECTOR CURRENT PK A CONT (A) DIE DIMENSIONS (MILS) NPN 60 30 200x210 PNP 60 30 210x210 100 NPN 40 20 180x180 100 PNP 40 20 180x180 150x150 DEVICE SERIES OUTPUT


    OCR Scan     		PDF 0D03M5fl 200x210 210x210 180x180 150x150 122x122

    transistor 1264-1

    Abstract: bfg90a transistor npn d 2058 BFG90 transistor J 4081 FP 801
    Text: Philips Semiconductors IH ^ 53*131 GG3 1 2 2 2 13T H A P X ^^^Productspecification NPN 5 GHz wideband transistor “ 1 £ N DESCRIPTION A ME R BFG90A P H IL IP S /D IS C R E T E b 'I E D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope.


    OCR Scan     		PDF BFG90A OT103 OT103. transistor 1264-1 bfg90a transistor npn d 2058 BFG90 transistor J 4081 FP 801

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEIUCOND SECTOR m SfiE D HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM130 D, R, H • 43D2271 GD4Sh72 13T H H A S 2N7271U, 2N7271H 2N7271H . Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 14A, 100V, RDS<on)» 0.180Q


    OCR Scan     		PDF FRM130 2N7271U, 2N7271H 2N7271H 43D2271 GD4Sh72 100KRAD 300KRAD 1000KRAD 3000KRAD

    transistor m6e

    Abstract: ET391 ET1275 2SC3551 equivalent 1SI50A-100 2SB757 ET191 ET367 M101 1S150A-050
    Text: BIPOLAR TRANSISTORS Ratings and Specifications CO LL ME R S E M I C O N D U C T O R INC MAE D Bi 2 2 3 Ö 7 S 2 D 0 0 1 b 0 3 13T H C O L "•pV3>-t3 m Buffer drive tra n sisto rs • Best suited for driving transistor m od ules. • A ll term in a ls are insulated from m ou n tin g plate.


    OCR Scan     		PDF 0D01b03 1SI50A-050 2SC3047 T0-220AB 2SC3549 2SC3551 1SI10A-100 2SD847 2SD1157 transistor m6e ET391 ET1275 2SC3551 equivalent 1SI50A-100 2SB757 ET191 ET367 M101 1S150A-050

    inductive proximity detector ic

    Abstract: VD neosid ablebond 293-1 NEOSID NEOSID 22 metal detector coil DIAGRAM neosid 10 metal detectors IC neosid CAP OM386M
    Text: • bbS3T31 0032745 13T H A P X N AMER PHILIPS/DISCRETE O M 386M O M 387M b'IE D HYBRID IN TE G R A TE D C IR C U IT S FOR IN D U C TIVE P R O X IM IT Y D E T E C T O R S Hybrid integrated circuits intended fo r inductive p ro xim ity detectors in tubular construction,


    OCR Scan     		PDF bbS3T31 OM386M OM387M 0M386M OM387M OM386B/OM387B inductive proximity detector ic VD neosid ablebond 293-1 NEOSID NEOSID 22 metal detector coil DIAGRAM neosid 10 metal detectors IC neosid CAP

    2N6028 Application Note

    Abstract: unijunction application note transistor 2n6027 2N6027 transistor put 2n6028 D13T D13T4 2N6028 D13T3 "Programmable Unijunction Transistor"
    Text: Silicon Programmable Unijunction Transistor D13T SERIES D13T3 D13T4 [PUT T h e G e n e ra l Electric D 13T 3 a n d D 1 3 T 4 a r e 100 volt versions o f th e p o p u ­ lar 2N 6 0 2 7 an d 2N 6 0 2 8 P r o g r a m m a b l e U n iju n c tio n T r a n s is to rs P U T ) .


    OCR Scan     		PDF D13T3 D13T4 2N6027 2N6028 D13T3 D13T4 2N6028 Application Note unijunction application note transistor 2n6027 transistor put 2n6028 D13T "Programmable Unijunction Transistor"

    Untitled

    Abstract: No abstract text available
    Text: KST24 NPN EPITAXIAL SILICON TRANSISTOR VHF MIXER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF KST24 KSP24 100MHz 150mV 60MHz 45MHz) 213MHz

    IC N6555

    Abstract: N6555 2N6549 2N6558 N6554 2n6556 2N6548 2N6551 2N6552 2N6553
    Text: Power Transistors TO-202 Case Z NPN Ö TYPE PNP 2N6548 2N6549 ic PD A (W) MAX BVCBO BVCEO @ lc hFE (V) (V) MIN MIN MIN MAX VCE(SAT) @ IC (mA) (A) MAX 2.0 2.0 50 40 25,000 150,000 200 15,000 150,000 200 n (MHz) MIN : 2.0 ; ; 2.0 100 2.0 20 100 2.0 2.0 50


    OCR Scan     		PDF O-202 2N6548 2N6549 2N6551 N6554 2N6552 N6555 2N6553 N6556 2N6557 IC N6555 2N6549 2N6558 2n6556 2N6548

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 938B 2SC3042 i SANYO NPN Triple Diffused Planar Silicon Transistor 400V/12A Switching Regulator Applications Features . High breakdown voltage VCBQ=500V . Fast switching speed. . Wide ASO. Absolute Maxiaua Ratings at Ta=25°C Collector-to-Base Voltage


    OCR Scan     		PDF 2SC3042 00V/12A PWS300ps, Cycled10? 4147KI/3095MW T707t 005003b

    Untitled

    Abstract: No abstract text available
    Text: 2SB944 Pow er Transistors 2SB944 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1269 •Features • • • • Unit ! mm 4.4max. 2.9max J0.2max. 5.7tnax. Low collector-emitter saturation voltage VcEisa»


    OCR Scan     		PDF 2SB944 2SB944 2SD1269 10OXlOOX2mm 2SB942/A)

    Untitled

    Abstract: No abstract text available
    Text: L CMBT3905 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arking CMBT3905 = 2Y PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN mm 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.90 ABSOLUTE MAXIMUM RATINGS Collector-base voltage open emitter


    OCR Scan     		PDF CMBT3905 23fl33T4 D000fi20 23A33T4

    MARKING CODE 13t sot363

    Abstract: sot363 13t 13t transistor SOT363 13T MARKING MARKING CODE 13t BC847BPN
    Text: Philips Semiconductors Preliminary specification NPN/PNP general purpose transistor FEATURES BC847BPN PINNING • Low collector capacitance PIN • Low collector-emitter saturation voltage 1 ,4 DESCRIPTION emitter TR1 ; TR2 • Closely matched current gain


    OCR Scan     		PDF BC847BPN SC-88; OT363 BC847BPN OT363) MARKING CODE 13t sot363 sot363 13t 13t transistor SOT363 13T MARKING MARKING CODE 13t

    2T3107

    Abstract: 2T3 transistor CMBT3905 marking d7b
    Text: CMBT3905 SILICON EPITAXIAL TRANSISTOR P -N -P transistor M arkin g CM BT3905 = 2Y P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.90 A BSO L U TE M A X IM U M R A TIN G S C ollector-base voltage open emitter


    OCR Scan     		PDF CMBT3905 23A3314 2T3107 2T3 transistor CMBT3905 marking d7b

    Untitled

    Abstract: No abstract text available
    Text: SGS1H0MS0N 57. AM82731-012 ;IL11 ¥ M [ RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS P R E LIM IN AR Y DATA i R E F R A C T O R Y /G O L D M ETA LL IZA TIO N • E M IT T E R S ITE BALLASTED ■ LO W T H E R M A L R E S IS T A N C E ■ IN P U T /O U T P U T M A T C H IN G


    OCR Scan     		PDF AM82731-012 J1331Ã

    2SC4541

    Abstract: 2SA1736 transistor marking 7D
    Text: T O S H IB A 2SC4541 2SC4541 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS 1.6MAX. 4.6MAX. 1.7MAX. : V ce (sat)“ 0.5V (Max.) (IC = 1.5A) High Speed Switching Time : ^ ^ = 0.5/^ (Typ.)


    OCR Scan     		PDF 2SC4541 2SA1736 40X50X0 250mm2 2SC4541 2SA1736 transistor marking 7D

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC2873 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC 2873 POWER SWITCHING APPLICATIONS Low Saturation Voltage : V ( j e ( s a t) = 0-5V (Max.) High Speed Switching Time : tg^=1.0/<s (Typ.) P q = 1~2W (Mounted on Ceramic Substrate)


    OCR Scan     		PDF 2SC2873 2SA1213

    EO75

    Abstract: 2SD1391 OF IC 713
    Text: Power Transistors 2SD1391 2SD1391 Silicon N PN Triple-D iffused Junction M esa Type • Package D im ensions H orizontal D eflection O utput ■ Features • H igh b re a k d o w n v o lta g e and high reliability by g lass p assiv atio n • H igh s p e e d sw itch in g


    OCR Scan     		PDF 2SD1391 75kHz bR32fl52 D01b71S EO75 2SD1391 OF IC 713

    Untitled

    Abstract: No abstract text available
    Text: m ROHM CO LT» 4 GE ]> 7 â 5 ê cm OQGS7S7 h 7 > ÿ X $ / T ransistors 3 BRHH 2SC3269 7 -2 7-/S~ 2SC3269 ¡ S I Î Œ i l Î i f f i / H i g h Voltage Amp. Triple Diffused Planar NPN Silicon Transistors "i& M '.' î V 'J i t - • W f ê 't f î il l/ D im e n s io n s U n it : mm


    OCR Scan     		PDF 2SC3269