ABB thyristor 5
Abstract: abb s 212 ABB thyristor 13N6
Text: VSM = 6500 V ITAVM = 1405 A ITRMS = 2205 A ITSM = 22000 A VT0 = 1.20 V rT = 0.600 mΩ Ω Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-03 Sep. 01 • Two thyristors integrated into one wafer • Patented free-floating silicon technology
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13N6500
5SYA1035-03
13N6200
13N5800
CH-5600
ABB thyristor 5
abb s 212
ABB thyristor
13N6
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13N6500
Abstract: Bidirectional control thyristor 13n65
Text: VSM = 6500 V ITAVM = 1405 A ITRMS = 2205 A ITSM = 22000 A VT0 = 1.20 V rT = 0.600 mΩ Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-03 Dec.00 • Two thyristors integrated into one wafer • Patented free-floating silicon technology • Designed for traction, energy and industrial applications
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Original
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13N6500
5SYA1035-03
13N6500
13N6200
13N5800
CH-5600
Bidirectional control thyristor
13n65
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13n65
Abstract: No abstract text available
Text: Key Parameters VSM = 6500 ITAVM = 1390 ITRMS = 2182 ITSM = 22000 VT0 = 1.20 rT = 0.600 Bi-Directional Control Thyristor V A A A V mΩ 5STB 13N6500 Doc. No. 5SYA 1035-02 July 98 Features •Two thyristors integrated into one wafer •Patented free-floating silicon technology
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Original
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13N6500
13N6500
13N6200
13N5800
CH-5600
13n65
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