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    13N6 Search Results

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    13N6 Price and Stock

    STMicroelectronics STL13N60DM2

    MOSFET N-CH 600V 8A POWERFLAT HV
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    DigiKey STL13N60DM2 Reel 6,000 3,000
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    STL13N60DM2 Cut Tape 5,127 1
    • 1 $1.98
    • 10 $1.647
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    Avnet Americas STL13N60DM2 Bulk 16 Weeks 3,000
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    Mouser Electronics STL13N60DM2 2,483
    • 1 $1.97
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    STMicroelectronics STL13N60DM2 2,483 1
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    Avnet Silica STL13N60DM2 17 Weeks 3,000
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    EBV Elektronik STL13N60DM2 17 Weeks 3,000
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    STMicroelectronics STB13N60M2

    MOSFET N-CH 600V 11A D2PAK
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    DigiKey STB13N60M2 Reel 5,000 1,000
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    • 1000 $1.03576
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    STB13N60M2 Cut Tape 2,900 1
    • 1 $2.18
    • 10 $1.813
    • 100 $1.4427
    • 1000 $1.22072
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    Mouser Electronics STB13N60M2 1,140
    • 1 $2.17
    • 10 $1.81
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    Newark STB13N60M2 Cut Tape 314 1
    • 1 $2.45
    • 10 $2.07
    • 100 $1.69
    • 1000 $1.63
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    STMicroelectronics STB13N60M2 1,140 1
    • 1 $2.13
    • 10 $1.77
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    Bristol Electronics STB13N60M2 5,000
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    TME STB13N60M2 1,000 1
    • 1 $2.19
    • 10 $1.79
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    Avnet Silica STB13N60M2 17 Weeks 1,000
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    STMicroelectronics STL13N60M6

    MOSFET N-CH 600V 7A POWERFLAT HV
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    DigiKey STL13N60M6 Reel 3,000 3,000
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    Avnet Americas STL13N60M6 Reel 14 Weeks 3,000
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    STL13N60M6 Reel 3,000
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    Mouser Electronics STL13N60M6
    • 1 $1.8
    • 10 $1.5
    • 100 $1.19
    • 1000 $0.854
    • 10000 $0.799
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    STMicroelectronics STL13N60M6 1
    • 1 $1.76
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    Avnet Silica STL13N60M6 15 Weeks 3,000
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    EBV Elektronik STL13N60M6 15 Weeks 3,000
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    STMicroelectronics STL13N65M2

    MOSFET N-CH 650V 6.5A POWERFLAT
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    DigiKey STL13N65M2 Cut Tape 2,723 1
    • 1 $1.88
    • 10 $1.564
    • 100 $1.2451
    • 1000 $0.89393
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    Avnet Americas STL13N65M2 Reel 16 Weeks 3,000
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    STMicroelectronics STL13N65M2 1
    • 1 $1.84
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    Avnet Silica STL13N65M2 17 Weeks 3,000
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    Chip1Stop STL13N65M2 9
    • 1 $1.13
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    EBV Elektronik STL13N65M2 17 Weeks 3,000
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    STMicroelectronics STD13N60DM2

    MOSFET N-CH 600V 11A DPAK
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    DigiKey STD13N60DM2 Cut Tape 2,233 1
    • 1 $1.72
    • 10 $1.427
    • 100 $1.1358
    • 1000 $0.81545
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    Mouser Electronics STD13N60DM2 2,283
    • 1 $1.72
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    Newark STD13N60DM2 Cut Tape 2,466 1
    • 1 $1.92
    • 10 $1.62
    • 100 $1.32
    • 1000 $0.994
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    Chip1Stop STD13N60DM2 5,000
    • 1 $1.575
    • 10 $1.3269
    • 100 $1.0719
    • 1000 $0.861
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    Find more 13N6 price and stock on Findchips.com

    13N6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		PDF 13N6901/S35A

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		PDF 13N6901/S35A

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		PDF 13N6951/S35A

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		PDF 13N6951/S35A 680nm

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		PDF 13N6901/S35A

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		PDF 13N6901/S35A 680nm

    Untitled

    Abstract: No abstract text available
    Text: IXKP 13N60C5M COOLMOS * Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		PDF 13N60C5M O-220 20080310b

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis photo general data type background suppression light source pulsed red laser diode


    Original     		PDF 13N6901/S35A 680nm

    ABB s

    Abstract: No abstract text available
    Text: V RM I T AV M I T(RMS) I TSM V T0 rT = 6500 V = 1405 A = 2205 A = 22x103 A = 1.2 V = 0.6 m Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-04 Aug. 10 • Two thyristors integrated into one wafer  Patented free-floating silicon technology


    Original     		PDF 13N6500 5SYA1035-04 13N6500 65echanical CH-5600 ABB s

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		PDF 13N6901/S35A

    gate turn-off

    Abstract: No abstract text available
    Text: VSM IT AV M IT(RMS) ITSM VT0 rT = 6500 V = 1405 A = 2205 A = 22x103 A = 1.2 V = 0.6 mΩ Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-03 May 06 • Two thyristors integrated into one wafer • Patented free-floating silicon technology •


    Original     		PDF 13N6500 5SYA1035-03 CH-5600 gate turn-off

    13n60c

    Abstract: 13n60
    Text: IXKP 13N60C5 CoolMOS 1 Power MOSFET ID25 = 13 A VDSS = 600 V RDS on) max = 0.3 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS


    Original     		PDF 13N60C5 O-220 20090209c 13n60c 13n60

    MA660

    Abstract: No abstract text available
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 13N60C5M ID25 = 6.5 A VDSS = 600 V RDS on max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G S Features MOSFET Conditions


    Original     		PDF 13N60C5M O-220 MA660

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		PDF 13N6951/S35A

    13n60c

    Abstract: 13N60
    Text: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		PDF 13N60C5M O-220 20090209d 13n60c 13N60

    13N60

    Abstract: 13N60C5M
    Text: IXKP 13N60C5M CoolMOS 1 Power MOSFET ID25 = 6.5 A VDSS = 600 V RDS on) max = 0.3 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		PDF 13N60C5M O-220 20080523c 13N60 13N60C5M

    13N60C5

    Abstract: 13N60 13n60c
    Text: IXKH 13N60C5 IXKP 13N60C5 Advanced Technical Information ID25 = 13 A = 600 V VDSS RDS on max = 0.3 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP)


    Original     		PDF 13N60C5 13N60C5 O-247 O-220 13N60 13n60c

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		PDF 13N6951/S35A

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		PDF 13N6951/S35A

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6901/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		PDF 13N6901/S35A

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors OHDM 13N6951/S35A Diffuse sensors with background suppression dimension drawing * 34,75 48,2 LED M8 x 1 39,2 6,45 Teach-in 41 13,4 4,2 3,6 40 29 2,1 * emitter axis general data photo type background suppression light source pulsed red laser diode


    Original     		PDF 13N6951/S35A

    ABB thyristor 5

    Abstract: abb s 212 ABB thyristor 13N6
    Text: VSM = 6500 V ITAVM = 1405 A ITRMS = 2205 A ITSM = 22000 A VT0 = 1.20 V rT = 0.600 mΩ Ω Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-03 Sep. 01 • Two thyristors integrated into one wafer • Patented free-floating silicon technology


    Original     		PDF 13N6500 5SYA1035-03 13N6200 13N5800 CH-5600 ABB thyristor 5 abb s 212 ABB thyristor 13N6

    SGW13N60UFD

    Abstract: No abstract text available
    Text: SGW 13N60UFD FE A TU R ES N-CHANNEL IG B T D2-PAK * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=6.5A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 37nS (typ.) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters


    OCR Scan     		PDF SGW13N60UFD SGW13N60UFD

    SGW13N60UF

    Abstract: No abstract text available
    Text: SGW 13N60UF N-CHANNEL IG B T FE A TU R ES * High Speed Switching * Low Saturation Voltage : V CE sat = 1.95 V (@ lc=6.5A) * High Input Impedance * Short Circuit Rated : Min. 2uS(@ Vge=15V) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters


    OCR Scan     		PDF SGW13N60UF SGW13N60UF