13N50
Abstract: 125OC FIGURE10
Text: HiPerFETTM Power MOSFETs IXFJ 13N50 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient
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13N50
Figure10.
125OC
FIGURE10
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13N50
Abstract: IXTH12N50A
Text: Power MOSFET IXTC 13N50 VDSS = 500 V ID25 = 12 A RDS on = 0.4 Ω ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary Data Sheet ISOPLUS 220TM Symbol Test Conditions Maximum Ratings VDSS
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13N50
ISOPLUS220TM
220TM
IXTH12N50A
728B1
13N50
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Untitled
Abstract: No abstract text available
Text: nixYS IXFH 13N50 IXFM 13N50 V DSS = 500 V HiPerFET Power MOSFET I = 13 A N-Channel E nhancem ent Mode High dv/dt, L o w t , HDMOS™ Family FtDS on = 0.4 £1 t Test Conditions V DSS V DGR ^ = 25°C to 150°C 500 V ^ = 25°C to 150°C; RGS = 1 M£i 500
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13N50
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Untitled
Abstract: No abstract text available
Text: □ IXYS HiPerFET IXFJ 13N50 V DSS Power MOSFETs ^D cont D DS(on) N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family Symbol t rr Tj = 25°C to 150°C 500 V v DGR Tj = 25°C to 150°C; RGS = 1 Mß 500 V V GS Continuous ±20 V VGSM Transient
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13N50
25value
13N50
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13N50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can
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13N50
O-220
13N50
O-220F
20pFat
QW-R502-362
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13n50g
Abstract: 13N50
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50 Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and
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13N50
O-220
13N50
O-220F
QW-R502-362
13n50g
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13N50 equivalent
Abstract: 13N50 IXFH13N50
Text: Power MOSFET IXTC 13N50 VDSS = 500 V ID25 = 12 A RDS on = 0.4 Ω ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary Data Sheet ISOPLUS220TM Symbol Test Conditions Maximum Ratings VDSS
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13N50
ISOPLUS220TM
728B1
123B1
728B1
065B1
13N50 equivalent
13N50
IXFH13N50
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13N50D
Abstract: 13N5 OC205 e5270 13N50
Text: rZ 7 SCS-THOMSON Ä T# [» [æ a jO îIR M O û S S T H 13N5 0 D N - CHANNEL ENHANCEMENT MODE FREDFET PRELIM INARY DATA TYPE STH 13N 50D . V dss R D S o n Id 500 V 0 .4 5 £2 13 A P O W E R M O S T R A N S IS T O R W ITH F A S T RECOVERY B U LK D IO D E: C O M P L E T E
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O-218
20/zs
STH13N50D
0C19570
13N50D
13N5
OC205
e5270
13N50
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ixfh13n50
Abstract: No abstract text available
Text: nixYS HiPerFET Power MOSFETs IXFH 13N50 VDSS I D cont P DS(on) = 500 V = 13 A = 0.4 Q <250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family $8 Maximum Ratings Symbol Test Conditions V DSS ^ =25°Cto 150°C 500 V v DGR ^ = 25° C to 150° C; RGS= 1 M£2
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13N50
O-247
IXFH13N50
ixfh13n50
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13n50
Abstract: IXYS DS 145 MAX1352
Text: gixYS HiPerFET Power MOSFETs IXFJ 13N50 VDSS = 500 V iD cont = 13 A \ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Test Conditions VDSS Tj =25°Cto150°C 500 V VDGR T j = 25° C to 150° C; RQS= 1 M£2 500 V Vos v GSM Continuous ±20
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13N50
Cto150
T0-220
C1-111
IXYS DS 145
MAX1352
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFJ 13N50 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions V A W ns Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous
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13N50
O-220
Figure10.
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13N50
Abstract: 13N50 equivalent 13n50g QW-R502-362 13N50G-TF1-T 362 MOSFET
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET DESCRIPTION 1 The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and faster switching speed. It can
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13N50
13N50
O-220
O-220F
QW-R502-362
13N50 equivalent
13n50g
13N50G-TF1-T
362 MOSFET
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50K-MT Preliminary Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50K-MT is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and
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13N50K-MT
13N50K-MT
O-220F2
QW-R502-B09
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50K-MT Preliminary Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50K-MT is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and
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13N50K-MT
13N50K-MT
O-220F2
QW-R502-B09
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50K Preliminary Power MOSFET 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50K is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and
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13N50K
13N50K
O-220F2
QW-R502-A85
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFJ 13N50 VDSS ID cont RDS(on) trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient
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13N50
Figure10.
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IXTH12N50A
Abstract: 13N50 1M500
Text: ADVANCE TECHNICAL INFORMATION Power MOSFET IXTC 13N50 VDSS = 500 V ID25 = 12 A RDS on = 0.4 Ω ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ISOPLUS 220TM Symbol Test Conditions Maximum Ratings
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13N50
ISOPLUS220TM
220TM
IXTH12N50A
13N50
1M500
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13N50
Abstract: utc13n50 13n50g 13N50 equivalent mosfet driver 400v halogen ballast 13N50G-TA3-T
Text: UNISONIC TECHNOLOGIES CO., LTD 13N50 Preliminary Power MOSFET 500V N-CHANNEL MOSFET DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and
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13N50
13N50
QW-R502-362
utc13n50
13n50g
13N50 equivalent
mosfet driver 400v
halogen ballast
13N50G-TA3-T
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AP13N50W
Abstract: No abstract text available
Text: 13N50W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 500V RDS ON 0.52Ω ID G 14A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP13N50W
13N50W
AP13N50W
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13N50c
Abstract: No abstract text available
Text: QFET 13N50C/13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQB13N50C/FQI13N50C
13N50C
FQB13N50CTM
O-263
FQB13N50C
FQB13N50CTM
com/pf/FQ/FQB13N50C
07-Dec-2009
13N50c
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3590S-491-103
Abstract: 23n50 13N50
Text: BLF6G15L-40BRN Power LDMOS transistor Rev. 1 — 14 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance
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BLF6G15L-40BRN
3590S-491-103
23n50
13N50
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13N50 equivalent
Abstract: 13N50 equivalent of 13N50 3VD499500YL
Text: 3VD499500YL 3VD499500YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD499500YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced voltageblocking capability;
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3VD499500YL
3VD499500YL
O-220
13N50;
13N50 equivalent
13N50
equivalent of 13N50
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23N50
Abstract: No abstract text available
Text: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 1 — 12 August 2010 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance
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BLF6G10L-260PRN;
BLF6G10LS-260PRN
BLF6G10L-260PRN
LS-260PRN
23N50
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13N50
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH 13 N50 VDSS = 500 V IXFM 13 N50 ID cont = 13 A RDS(on) = 0.4 W trr £ 250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW
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O-247
O-204
100ms
13N50
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