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    13N10 MOSFET Search Results

    13N10 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    13N10 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    13N10

    Abstract: NTP13N10 13N10 mosfet AN569 NTP13N10G
    Text: NTP13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTP13N10 O-220 NTP13N10/D 13N10 NTP13N10 13N10 mosfet AN569 NTP13N10G

    13n10

    Abstract: 13N10 mosfet NTP13N10
    Text: NTP13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTP13N10 O-220 tpv10 13n10 13N10 mosfet NTP13N10

    NTP13N10

    Abstract: No abstract text available
    Text: NTP13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTP13N10 NTP13N10/D NTP13N10

    13n10

    Abstract: NTP13N10 13N10 mosfet AN569 NTP13N10G
    Text: NTP13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTP13N10 O-220 NTP13N10/D 13n10 NTP13N10 13N10 mosfet AN569 NTP13N10G

    Untitled

    Abstract: No abstract text available
    Text: NTB13N10 Power MOSFET 100 V, 13 A, N−Channel Enhancement−Mode D2PAK Features http://onsemi.com • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTB13N10 NTB13N10/D

    13n10

    Abstract: 13N10 mosfet AN569 NTB13N10 NTB13N10G NTB13N10T4 NTB13N10T4G 13n10g
    Text: NTB13N10 Power MOSFET 100 V, 13 A, N−Channel Enhancement−Mode D2PAK Features http://onsemi.com • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTB13N10 NTB13N10/D 13n10 13N10 mosfet AN569 NTB13N10 NTB13N10G NTB13N10T4 NTB13N10T4G 13n10g

    TP2350B

    Abstract: mosfet vn10 TRIPATH TC2001 Tp2350 VN10 VN10 application 13N10 100uF 150v capacitor what is the best speaker wattage and ohms TRIPATH TECHNOLOGY
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TP2150B DUAL HIGH SIDE AND LOW SIDE MOSFET DRIVER Technical Information Revision 1.7 – June 2004 GENERAL DESCRIPTION The TP2150B is a high speed, dual high side and low side MOSFET driver. The TP2150B level shifts CMOS


    Original     		PDF TP2150B TP2150B TP2350B mosfet vn10 TRIPATH TC2001 Tp2350 VN10 VN10 application 13N10 100uF 150v capacitor what is the best speaker wattage and ohms TRIPATH TECHNOLOGY

    3000 watts subwoofer circuit diagram

    Abstract: 200w subwoofer circuit 12v 60W subwoofer CIRCUIT DIAGRAM IRF530N h bridge stereo amplifier 400W 400W low pass subwoofer circuit diagram 100 watt subwoofer circuit diagram subwoofer audio amplifier circuit diagram 500 watt audio subwoofer "subwoofer amplifiers"
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TK2150 STEREO 200W 6Ω CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING T M TECHNOLOGY Technical Information - Preliminary Revision 1.0 – December 2002 GENERAL DESCRIPTION


    Original     		PDF TK2150 TC2001/TP2150 3000 watts subwoofer circuit diagram 200w subwoofer circuit 12v 60W subwoofer CIRCUIT DIAGRAM IRF530N h bridge stereo amplifier 400W 400W low pass subwoofer circuit diagram 100 watt subwoofer circuit diagram subwoofer audio amplifier circuit diagram 500 watt audio subwoofer "subwoofer amplifiers"