Si4880DY
Abstract: Si4880DY-T1 Si4880DY-T1-E3
Text: Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V ± 13 0.014 at VGS = 4.5 V ± 10 • TrenchFET Power MOSFETS • High-Efficiency • PWM Optimized Pb-free
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Si4880DY
Si4880DY-T1
Si4880DY-T1-E3
S-60382
13-Mar-06
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tanaka gold wire
Abstract: MMIC X-band amplifier P1006 DM6030HK TS3332LD XP1006 XP1006 bonding X-band GaAs pHEMT MMIC Chip
Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier March 2006 - Rev 13-Mar-06 P1006 Features X-Band 10W Power Amplifier 21.0 dB Large Signal Gain +40.0 dBm Saturated Output Power 30% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing
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13-Mar-06
P1006
MIL-STD-883
XP1006
tanaka gold wire
MMIC X-band amplifier
P1006
DM6030HK
TS3332LD
XP1006
XP1006 bonding
X-band GaAs pHEMT MMIC Chip
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S-60382
Abstract: 60382
Text: Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V ± 13 0.014 at VGS = 4.5 V ± 10 • TrenchFET Power MOSFETS • High-Efficiency • PWM Optimized Pb-free
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Si4880DY
Si4880DY-T1
Si4880DY-T1-E3
18-Jul-08
S-60382
60382
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RCA e3
Abstract: RCA040
Text: RCA. e3 Vishay Automotive Grade Lead Pb -free Thick Film, Rectangular Chip Resistors FEATURES • Metal glaze on high quality ceramic with protective overglaze • Sulfur resistant • Superior resistance against H2S-atmosphere than standard Ag contacts
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2002/95/EC
08-Apr-05
RCA e3
RCA040
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jedec 0603
Abstract: ILBB-0603 EIA 0603 EIA481-1
Text: ILBB-0603 Vishay Dale Multilayer Ferrite Beads FEATURES • • • • High reliability Surface mountable Magnetically self shielded Nickel barrier plating virtually eliminates silver migration • 100 % lead Pb -free and RoHS compliant RoHS COMPLIA NT MECHANICAL SPECIFICATIONS
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ILBB-0603
08-Apr-05
jedec 0603
ILBB-0603
EIA 0603
EIA481-1
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Si7113DN
Abstract: No abstract text available
Text: Si7113DN Vishay Siliconix New Product P-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) FEATURES rDS(on) (Ω) - 100 ID (A) Qg (Typ) 13.2e 0.113 at VGS = - 10 V - 0.145 at VGS = - 4.5V - 12.7e 16.5 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®
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Si7113DN
Si7113DN-T1-E3
08-Apr-05
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Silo hopper
Abstract: ph 77 single LOAD CELL Compression Load Cell
Text: Model 65114 Vishay Sensortronics Stainless Steel, Single Column Compression Load Cell FEATURES • Rated capacities of 50,000 to 100,000 pounds; 25 to 50 metric tons • Stainless steel, welded seal construction • 30 feet standard cable length • Trade certified for NTEP Class IIIL:10000 divisions and
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IP66/68
08-Apr-05
Silo hopper
ph 77
single LOAD CELL
Compression Load Cell
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Si5475BDC
Abstract: Si5475BDC-T1-E3
Text: Si5475BDC Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A)a 0.028 at VGS = - 4.5 V -6 0.039 at VGS = - 2.5V -6 0.054 at VGS = - 1.8 V -6 • TrenchFET Power MOSFET: 1.8-V Rated Qg (Typ) RoHS
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Si5475BDC
Si5475BDC-T1--E3
08-Apr-05
Si5475BDC-T1-E3
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SI7216DN-T1-E3
Abstract: Si7216DN
Text: Si7216DN New Product Vishay Siliconix Dual N-Channel 40-V D-S MOSFET PRODUCT SUMMARY VDS (V) 40 FEATURES rDS(on) (W) ID (A) 0.032 at VGS = 10 V 6e 0.039 at VGS = 4.5 V 5e Qg (Typ) 5 5 nC 5.5 D TrenchFETr Power MOSFET D Low Thermal Resistance PowerPAKr Package with Small Size and Low 1.07-mm
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Si7216DN
07-mm
08-Apr-05
SI7216DN-T1-E3
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Untitled
Abstract: No abstract text available
Text: CS 22 Vishay Sfernice Single Value Chip Resistor FEATURES • Small size 20 mil x 20 mil • Very high ohmic value up to 10 M • Good stability 0.1 % 2000 h, rated power at 70 °C Actual Size RoHS COMPLIANT TYPICAL PERFORMANCE Chromium silicon thin film is very well suited to produce high
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08-Apr-05
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EIA 0603
Abstract: EIA481-1 ILBB-0603 ILBB-0603-220 PB 0603
Text: ILBB-0603 Vishay Dale Multilayer Ferrite Beads FEATURES • • • • High reliability Surface mountable Magnetically self shielded Nickel barrier plating virtually eliminates silver migration • 100 % lead Pb -free and RoHS compliant RoHS COMPLIA NT MECHANICAL SPECIFICATIONS
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ILBB-0603
18-Jul-08
EIA 0603
EIA481-1
ILBB-0603
ILBB-0603-220
PB 0603
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Si1403DL
Abstract: Si1403DL-T1 SOT-363 MARKING CODE OA
Text: Si1403DL Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 25 rDS(on) (Ω) ID (A) 0.180 at VGS = - 4.5 V ± 1.5 0.200 at VGS = - 3.6 V ± 1.4 0.265 at VGS = - 2.5 V ± 1.2 • TrenchFET Power MOSFET Pb-free Available
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Si1403DL
OT-363
SC-70
Si1403DL-T1
Si1403DL-T1-E3
18-Jul-08
SOT-363 MARKING CODE OA
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60382
Abstract: No abstract text available
Text: Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0085 at VGS = 10 V ± 13 0.014 at VGS = 4.5 V ± 10 • TrenchFET Power MOSFETS • High-Efficiency • PWM Optimized Pb-free
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Si4880DY
Si4880DY-T1
Si4880DY-T1-E3
08-Apr-05
60382
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Si4565DY
Abstract: No abstract text available
Text: Si4565DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P Channel P-Channel –40 40 rDS(on) (W) ID (A) 0.040 at VGS = 10 V 5.2 0.045 at VGS = 4.5 V 4.9 0.054 at VGS = –10 V –4.5 D TrenchFETr Power MOSFET
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Si4565DY
18-Jul-08
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Si4565DY
Abstract: No abstract text available
Text: Si4565DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P Channel P-Channel –40 40 rDS(on) (W) ID (A) 0.040 at VGS = 10 V 5.2 0.045 at VGS = 4.5 V 4.9 0.054 at VGS = –10 V –4.5 D TrenchFETr Power MOSFET
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Si4565DY
S-60383--Rev.
13-Mar-06
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si7216
Abstract: No abstract text available
Text: Si7216DN New Product Vishay Siliconix Dual N-Channel 40-V D-S MOSFET PRODUCT SUMMARY VDS (V) 40 FEATURES rDS(on) (W) ID (A) 0.032 at VGS = 10 V 6e 0.039 at VGS = 4.5 V 5e Qg (Typ) 5 5 nC 5.5 D TrenchFETr Power MOSFET D Low Thermal Resistance PowerPAKr Package with Small Size and Low 1.07-mm
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Si7216DN
07-mm
18-Jul-08
si7216
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SUD50N04-07-E3
Abstract: SUD50N04-07
Text: SUD50N04-07 Vishay Siliconix New Product N-Channel 40-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.0074 at VGS = 10 V 65 0.011 at VGS = 4.5 V 54 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • Low Threshold
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SUD50N04-07
O-252
SUD50N04-07-E3
18-Jul-08
SUD50N04-07-E3
SUD50N04-07
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Untitled
Abstract: No abstract text available
Text: Si4565DY New Product Vishay Siliconix N- and P-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P Channel P-Channel –40 40 rDS(on) (W) ID (A) 0.040 at VGS = 10 V 5.2 0.045 at VGS = 4.5 V 4.9 0.054 at VGS = –10 V –4.5 D TrenchFETr Power MOSFET
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Si4565DY
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si1403DL Vishay Siliconix New Product P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 25 rDS(on) (Ω) ID (A) 0.180 at VGS = - 4.5 V ± 1.5 0.200 at VGS = - 3.6 V ± 1.4 0.265 at VGS = - 2.5 V ± 1.2 • TrenchFET Power MOSFET Pb-free Available
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Si1403DL
OT-363
SC-70
Si1403DL-T1
Si1403DL-T1-E3
08-Apr-05
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EIA481-1
Abstract: ILBB-0603 EIA-481-1
Text: ILBB-0603 Vishay Dale Multilayer Ferrite Beads FEATURES • • • • High reliability Surface mountable Magnetically self shielded Nickel barrier plating virtually eliminates silver migration • Compliant to RoHS directive 2002/95/EC ENVIRONMENTAL SPECIFICATIONS
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ILBB-0603
2002/95/EC
18-Jul-08
EIA481-1
ILBB-0603
EIA-481-1
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Untitled
Abstract: No abstract text available
Text: 7 8 T H IS D R A W IN G 15 U N P U B L IS H E D . RELEASED ALL C O P YR IG H T 2006 BY TYCO ELE C TR O N IC S FO R P U B L IC A T IO N R IG H T S lo c RESERVED. GP 0 0 C O RP O RA TIO N. R E V IS IO N S d is t ' — P~~| L fR I D E S C R IP T IO N I RELEASED PER EC 0 S 1 3 - 0 2 2 1 - 0 5
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19SEP05
13MAR06
us012439
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Untitled
Abstract: No abstract text available
Text: SAFETY DRGANIZATIDNS RELIABILITY SPECIFICATIONS: T H I S F I LTER HAS BEEN FORMALLY RECOGNIZED, CERTIFIED OR APPROV E D B Y T H E LISTED AGENCY, THEREFORE, ALL TEST/REQUIREMENTS SPECIFIED IN T H E LATEST REVISION OF THE FOLLOWING AGENCY STANDARDS H A V E BEEN MET:
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60DBX8
09-02230IMUM)
60Q60
13MAR06
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Untitled
Abstract: No abstract text available
Text: 7 8 TH IS DRAWING 15 U N P U B L IS H E D . RELEASED ALL COPYRIGHT 2006 FOR 5 4 3 2 PUBLICATION RIGHTS LOC RES ER VED . REVISIONS D IS T GP 00 BY TYCO ELECTRONICS CORPORATION. LTR D E S C R IP T IO N RELEASED PER EC OS1 3 - 0 2 2 1 - 0 5 DATE DWN APVD 30AUG05
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30AUG05
31MAR2000
13MAR06
us012439
\dmmod\5205732
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. CABLE SUPPORT H O U S IN G D #6-32 SLOTTED 1 SET X C CROSS RECESSED PANHEAD S E L F - T A P P IN G SCREW 3 PLACES S IZ E # 4 PLUG OR R E C E P T A C L E
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31MAR2000
13MAR06
us012439
\dmmod\5205731
30AUG05
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