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    MPSA92

    Abstract: No abstract text available
    Text: G E SOLI» STATE GÏ 3875081 G E SOLID STATE DE 13fl75Gfll ODlVTflö 3 01E ~T~ 17988 2 - ? “ 2- / Signal Transistors .— .- MPS-A42, A43, MPS-A92, A93 Complimentary High Voltage Silicon


    OCR Scan     		PDF 13fl75Gfll MPS-A42, MPS-A92, MPS-A43 MPS-A42 MPS-A92 MPSA92

    U308-U310

    Abstract: U310
    Text: IG E SOLI» STATE Dl DE 13fl75Qfll DD110SÖ 5 | 01E 11058 D U308-U310 N-Channel JFET High Frequency Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS • H ig h P o w e r G ain Ta = 25°C unless otherwise noted Gate-Drain or Gate-Source V o lt a g e . - 2 5 V


    OCR Scan     		PDF U308-U310 13fl75Qfll DD110SÖ 100dB 10sec) U308-U310 U310

    j307

    Abstract: lD-10mA IT1700
    Text: Gl G E SOLID STATE DE 13fl7SGfil GOllGBT 1 | P-Channel Enhancement Mode MOSFET General Purpose Amplifier IT1700 IT1700 T -s^ -sn FEATURES ABSOLUTE MAXIMUM RATINGS • Low ON-Resistance 0 a = 25°C unless otherwise noted Drain-Source and Gate-Source Voltage . -4 0 V


    OCR Scan     		PDF J3075001 IT1700 10sec) 375mW 300ms. j307 lD-10mA IT1700

    2N3904

    Abstract: 2n3906 for 2N3904 2N3906 JEDEC 2n3906 rca 2N3903 2N3906-O 2N3904 230 2N3905 2N3S04
    Text: G E SOLID STATE D1 3875081 G E SOLID STATE DE 13fl7SDfil □□17124 .0 01E Signal - 2N3903, 2N3904, 2N3905, 2N3906 17924 D *r-3 7-/r _ * r ~ 3 S V / Silicon Transistors TO-92 The GE/RCA 2N3903, 2N3904 NPN types and 2N3905,


    OCR Scan     		PDF 307SQÃ 2N3903, 2N3904, 2N3905, 2N3906 2N3904 2N3903 for 2N3904 2N3906 JEDEC 2n3906 rca 2N3906-O 2N3904 230 2N3905 2N3S04

    1763S

    Abstract: RFM4N35 RFM4N40 RFP4N35 RFP4N40
    Text: □ 1. DE 13fl7SDfll 00 10125 7 38/5081 G É SOLID STATE Standard Power MOSFETs 0 1E 18125 _ RFM4N35, RFM4N40, RFP4N35, RFP4N40 D File Number 1491 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM


    OCR Scan     		PDF 13fl7SDfll RFM4N35, RFM4N40, RFP4N35, RFP4N40 RFM4N35 RFM4N40 RFP4N35 RFP4N40* 92CS-37053 1763S RFP4N40

    Untitled

    Abstract: No abstract text available
    Text: -7 A I L PN P ^SER IES TAv+'s*} 7 - IW K T f s ilS O utline Dimensions Case : E-pack 2.55 —02 0 .5 ± 0 1 j m n i 4 .8 + 0 .2 F I I l. i ^ Base Collector Emitter Unit * mm A bsolute Maximum R atings s m m n & S to ra g e Tem perature Ju n c tio n Tem perature


    OCR Scan     		PDF 13fl7

    C2688

    Abstract: TA7270 TA7290 2n5784 pnp transistor 2N5784 2N5783 2n5783 rca RCA-2N5781 2n5782 RCA tRANSISTOR c2688
    Text: Öl E SOLI» STATE 387 508 1 G E SOLID STATE General-Purpose Power Transistors ' DE | 3fl750öl □□173Tb □ X " 01E 17396 " D T ' ?S '- f f " T ' 2 T * ' 1 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786


    OCR Scan     		PDF 3a750Ã 2N5781, 2N5782, 2N5783, 2N5784, 2N5785, 2N5786 RCA-2N5781 2N5783 C2688 TA7270 TA7290 2n5784 pnp transistor 2N5784 2n5783 rca 2n5782 RCA tRANSISTOR c2688

    GES5815

    Abstract: GES5818 17975 GES5316 GES5616 GES5814 GES5816 GES5817 GES5819
    Text: G □1 E SOLID STATE DE I 3fl7SDfll 0D17T74 3 01E 17974 3875081 G E SOLID STATE D T - ¿ > 7 -2-/ Signal Transistors_ GES5814, GES5815, GES5816 GES5817, GES5818, GES5819 Silicon Transistors Features: • Excellent gain linearity over wide range of collector current: ¿ 5 0 0 mA


    OCR Scan     		PDF GES5814, GES5815, GES5816 GES5817, GES5818, GES5819 85tfRH GES5816, GES5815 GES5818 17975 GES5316 GES5616 GES5814 GES5817 GES5819

    diode 6t6

    Abstract: H24B1 H24B2
    Text: G E SOLID STATE o u r «/vw « -wi — -— 01 - — DE|3fi?SDfil D D n a i D S | Optoelectronic Specifications. T - q \ ' Z $ Photon Coupled Isolator H24B1-H24B2 Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier The G E Solid State H24B series consists o f a gallium arsenide


    OCR Scan     		PDF H24B1-H24B2 E51868 00pps diode 6t6 H24B1 H24B2

    am sw fm radio printed circuit board

    Abstract: an7222 AN7224 matsua 455KHz ceramic filter am "RF Amplifier" panasonic FM tuner toko fm detector coil CFM2-455B fm radio printed circuit board AM-FM TUNER
    Text: AN7224 AN7224 AM Tuner, FM-AM IF Amplifier Circuit for Radio Cassette Recorders Unit : mm • Description T he A N 7224 is a m onolithic integrated circuit designed for h ig h p e rfo rm a n c e , m u lti-fu n c tio n F M -A M IF sy stem . ■ Features •


    OCR Scan     		PDF AN7224 AN7224 18-Lead 18-DIP) 001367b 400Hz, AN7222/24 bS32652 am sw fm radio printed circuit board an7222 matsua 455KHz ceramic filter am "RF Amplifier" panasonic FM tuner toko fm detector coil CFM2-455B fm radio printed circuit board AM-FM TUNER

    Silicon unilateral switch

    Abstract: DG1U SUS GE 2N4987 2N4987 equivalent 2N4987 GE 2N4988 2n498 2N4988 soli capacitors
    Text: "ÏÏÏ G E SOLID STATE DE|3fl750fll DGlflDll 3 | 0 1E 18011 387 5 08 1 G E S O L I D ST A T E D Unijunction Transistors and Switches 2N4987, 2N4988, 2N4989, 2N4990 T 'Z S -c ^ Silicon Unilateral Switch Applications: • SCR Triggers ■ Frequency Drivers


    OCR Scan     		PDF 3fl750fll 2N4987, 2N4988, 2N4989, 2N4990 2N4987-90 19--Overvoltage 3S750S1 Silicon unilateral switch DG1U SUS GE 2N4987 2N4987 equivalent 2N4987 GE 2N4988 2n498 2N4988 soli capacitors

    2N6761

    Abstract: 2N6762 2N6767 2nc762
    Text: 3875081 G E SOLID STATE 01 D e I b ö TSDAI □ D l 0 3 T b S _ I ” T-39-11 Standar O P ower M O S F E T s 2N6761, 2N6762 File N u m b e r 1 5 8 9 N-Channel Enhancement-Mode Power Field-Effect Transistors 4.0A and 4.5A, 450V - 500V iDs on = 1.5 0 and 2.0 fi


    OCR Scan     		PDF T-39-11 2N6761, 2N6762 2N6761 2N6762 3fi75Dfll 2N6767 2nc762

    2N3392 equivalent

    Abstract: 2N3394 2N3394 equivalent 2N3391 2n3393 equivalent 92C3-426C3 2N3391A 2N3393 2N3392 3391A
    Text: G E SOLID STATE 3875081 G E SOLID STATE 0 1 D E Ï 3Û7S0Û1 0017=111 01E 17911 D r- W ' t l Transistors 2N3390-94,2N3391A Silicon Transistors TO-98 The 6E/RCA 2N3390-94, 2N3391A are planar, passivated


    OCR Scan     		PDF DD17111 2N3390-94 2N3391A 2N3390-94, 2N3391A 2N3391 2N3391A. 2CS-427II 750fll 2N3392 equivalent 2N3394 2N3394 equivalent 2n3393 equivalent 92C3-426C3 2N3393 2N3392 3391A

    MCT210

    Abstract: No abstract text available
    Text: fs E SOLID STATE 01 DE | 3ñ7S0 ñl_0 Dnfi7t 2 Optoelectronic Specifications. T -m -Z3 Photon Coupled Isolator MCT210 GaAs Infrared Emitting Diode & NPN Silicon Photo-Transistor M IN A 8 C P E F G H J K M N P R S TOCovered under U .L . component recognition program,


    OCR Scan     		PDF T-Hl-23 MCT210 MCT210 E51868 50/jA. 0110b

    3N188

    Abstract: 3N190 3N189 3N191
    Text: □1 SOLID S T A T E DEJ3Ö750Ö1 0 0 1 1 D E 3 fl ^ 7 T - - 2 .7 3N188-3N191 3N188-3N191 Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier FEATURES ABSOLUTE MAXIMUM RATINGS • Very High Input impedance • High Gate Breakdown 3N190-3N191 • Zener Protected Gate 3N188-3N189


    OCR Scan     		PDF 3N188-3N191 3N188 3N189 3N190, 3N191 10sec) 300mW 300ns; 3N190 3N189 3N191

    GES2222

    Abstract: No abstract text available
    Text: Ql SOLID STATE Ö F |3fl7S 0fil 3875081 G E SOLID STATE □ 0 1 7 clt.a 7 01E 17962 D 3^1 Signal Transistors 1 GES2221, GES2222, MPS2222, PN2222 Silicon Transistors Features: • Performance comparable to hermetic units * High Gain ■ Low VCE SAT ■ High Frequency


    OCR Scan     		PDF GES2221, GES2222, MPS2222, PN2222 GES2222 MPS2222 GES2221

    RCA Television Schematic Diagram

    Abstract: tv schematic diagram SHARP transistor P7d tv schematic diagram SHARP catv transistor 2sc 973 tv schematic diagram SHARP power supply si7585 schematic diagram color tv sharp 14" BALLANTINE schematic diagram tv sharp horizontal deflection
    Text: G E SOLID STATE Dl r DE 1 3075001 DOIMTIE 0 TV/CATV Circuits CA3070, CA3071, CA3072_ 01É 14912 3875081 G E SO LID STATE T 7 7 -0 7 -D ? Television Chroma System Features: CA3071 CA3070 • Voltage Controlled Oscillator ■ ACC Controlled Chroma Am plifier


    OCR Scan     		PDF CA3070, CA3071, CA3072_ CA3070 CA3072 CA3071 CA3070 RCA Television Schematic Diagram tv schematic diagram SHARP transistor P7d tv schematic diagram SHARP catv transistor 2sc 973 tv schematic diagram SHARP power supply si7585 schematic diagram color tv sharp 14" BALLANTINE schematic diagram tv sharp horizontal deflection

    1RFF111

    Abstract: a08g IRFF110 IRFF111 IRFF112 IRFF113
    Text: G E SOLID STATE Dl DE D Ë | 3 ô 7 S 0 a i 001flE4ci 3 3875081 G E SOLID STATE 01E 18249 Standard Power M O S F E T s_ IRFF110, IRFF111, IRFF112, IRFF113 T~- $ i ~ ° i D File Number 1562 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode


    OCR Scan     		PDF 7SD01 1RFF110, IRFF111, IRFF112, IRFF113 0V-100V IRFF110, IRFF112 IRFF113 1RFF111 a08g IRFF110 IRFF111

    RFL1N20L

    Abstract: RFP2N20L RFL1N18L RFP2N18L
    Text: ]>ËÏ 3Ô7SDS1 DD1Ö435 5 T ~ D T “3 ? ' 0 9 '3875081 G E SOLID STATELO! Logic-Level Power MOSFETs _ 5 !_ RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L File Number 1511 N-Channel Logic Level Power Field-Effect Transistors L2 FET


    OCR Scan     		PDF 307SG01 RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L RFL1N18L RFL1N20L RFP2N18L

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED D E V I C E . Integrated Device Technology» Inc. b&E D 4Û 25771 GG lBf ih T S T T • I D T BUS-MATCHING BIDIRECTIONAL FIFO 512 x 1 8 -B IT -1024 x 9-BIT 1024 x 18-BIT - 2048 x 9-BIT IDT72510 IDT72520 FEATURES: DESCRIPTION: • Two side-by-side F IF O memory arrays for bidirectional


    OCR Scan     		PDF 18-BIT IDT72510 IDT72520 T72510) T72520) 18-to-9-bit, 36-to-9-bit,

    HGP-1004

    Abstract: 2N6354 ESB91 transistor bc 144 TA7534
    Text: 3875081 G E SOLID STATE 01 DE |3A750fll 001713^ 2~|~~ File Numfcier 582 120-V, 10-A, 140-W Silicon N-P-N Planar Transistor For Sw itching Applications in Military and Industrial Equipm ent Features: •* High Vceo{sus : 120 V ■ Maximum safe-area-of operation curves


    OCR Scan     		PDF B30750Ã 2N6354 TQ-204AA 2N6354* T0-204AA 2N6354 swi354 ----l-t--90% S2CS-20I22 HGP-1004 ESB91 transistor bc 144 TA7534

    IRF833

    Abstract: IRF832 1RF831 30010 IRF830 IRF831 w sa 45a diode
    Text: 3875081 G E SOLID STATE 01 Standard Power M O S FE T s DE 1 3Û7SQÔ1 QDlfl37‘ì S I D - - IRF830, IRF831, IRF832, IRF833 File Number 1582 Power MOS Field-Effect Transistors N -CH A NN EL EN H A N C E M E N T M ODE


    OCR Scan     		PDF lfl37c! T-39- IRF830, IRF831, IRF832, IRF833 50V-500V IRF832 IRF833 1RF831 30010 IRF830 IRF831 w sa 45a diode

    GES2646

    Abstract: 2N2646 11Z12 GES2647 2N2646 terminal 2N2646 TO-92 2n2646 to 92 2N2647 transistor GES2646 Unijunction transistor 2N2646 of
    Text: G E SOLID STATE 3875081 Öl G E SOLID STATE »T|3fl7SDÔl □D17tm 01E 1 7 999 fl J D T -“ 3 7 - a _ / Transistors and Switches 2N2646, 2N2647, GES2646, GES2647 Silicon Unijunction Transistors


    OCR Scan     		PDF 2N2646, 2N2647, GES2646, GES2647 GES2646 GES2647 2N2647 2N2646 11Z12 2N2646 terminal 2N2646 TO-92 2n2646 to 92 transistor GES2646 Unijunction transistor 2N2646 of

    2N5640

    Abstract: 2N5638 2N5639 2N5640 equivalent 2N5638-2N5640
    Text: □1 SOLI» STATE 3875081 G È SOLID STATE De"J 3fl?S0fll ODllDOb fi 01E 11006 1 2N5638- 2N5640 D If iM f e lllL » N-Channel JF E T Switch £ FEATURES ABSOLUTE MAXIMUM RATINGS B • Econom y Packaging H • Fast Switching * • Low Draln-Source 'ON' Resistance


    OCR Scan     		PDF 2N5638-2N5640 750fll 10sec) 3fl750Ã 10VDC 2N5640 2N5638 2N5639 2N5640 equivalent 2N5638-2N5640