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    13B2 DIODE Search Results

    13B2 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    13B2 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZD602

    Abstract: B628 ALC258 TP2121 BA41-00509A bd631 TP2274 zd601 S2R51 ati M22P
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D FIRENZE C B CPU :Dothan533


    Original     		PDF TP1765 TP1714 TP1715 TP1716 TP1717 TP1718 TP1719 TP1720 TP1721 TP1722 ZD602 B628 ALC258 TP2121 BA41-00509A bd631 TP2274 zd601 S2R51 ati M22P

    ALC122

    Abstract: ZD602 ALC258 TP2121 B628 ZD601 TP728 smd code w14 tp2307 Socket AM2
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. TABLE OF CONTENTS D FIRENZE C CPU :Dothan533 Chip Set :ALVISO & ICH6-M


    Original     		PDF CONTROLLER62 TP1763 TP1764 TP1765 TP1714 TP1715 TP1716 TP1717 TP1718 TP1719 ALC122 ZD602 ALC258 TP2121 B628 ZD601 TP728 smd code w14 tp2307 Socket AM2

    Untitled

    Abstract: No abstract text available
    Text: PI3LVD1012 3.3V, 10-differential channel Dual-LVDS switch targeted for 24bit displays Features Description • Designed specifically to switch Dual-LVDS signals • VDD = 3.3V +/-10% • ESD tolerance on video I/O pins is up to 12kV HBM • -3dB BW of 1.0GHz typ


    Original     		PDF PI3LVD1012 10-differential 24bit -55dB 80-pin PI3LVD1012 MO-154C/BC 80-Pin, 150-Mil

    ZP80

    Abstract: 11B2 Diode motorola diode ZP PI3LVD812 diode 6b1 10B1 10B2 11B1 11B2 12B1
    Text: PI3LVD812 3.3V, 8-differential Channel Dual-LVDS Switch Targeted for 18-bit Displays Features Description • Designed specifically to switch Dual-LVDS signals • Full switch for 6-differential LVDS data signals and 2 differential LVDS clock signals • VDD = 3.3V ±10%


    Original     		PDF PI3LVD812 18-bit -55dB 80-pin PI3LVD812 PS9034A 5X11mm ZP80 11B2 Diode motorola diode ZP diode 6b1 10B1 10B2 11B1 11B2 12B1

    Untitled

    Abstract: No abstract text available
    Text: PI3LVD1012 3.3V, 10-differential channel Dual-LVDS switch targeted for 24bit displays Features Description • Designed specifically to switch Dual-LVDS signals • VDD = 3.3V +/-10% • ESD tolerance on video I/O pins is up to 12kV HBM • -3dB BW of 1.0GHz typ


    Original     		PDF PI3LVD1012 10-differential 24bit -55dB 80-pin PI3LVD1012 MO-154C/BC 80-Pin, 150-Mil

    oz960

    Abstract: 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763
    Text: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN TABLE OF CONTENTS B A COVER PAGE BLOCK DIAGRAM, SYSTEM, POWER & PCB INFO


    Original     		PDF MPC7450 oz960 16b3 zener diode Zener 13B3 zener diode 7A3 SN0210 6R-P10 16B1 zener diode Zener Diode 13B3 q59 apple C5763

    18b2 diode

    Abstract: DIODE 15B2 PI3LVD1012 diode 18b2 PI3LVD1012BE 18b1 diode 15b2 diode 18b2 10B1 10B2
    Text: PI3LVD1012 3.3V, 10-differential channel Dual-LVDS switch targeted for 24bit displays Features Description • Designed specifically to switch Dual-LVDS signals • VDD = 3.3V +/-10% • ESD tolerance on video I/O pins is up to 12kV HBM • -3dB BW of 1.0GHz typ


    Original     		PDF PI3LVD1012 10-differential 24bit -55dB 80-pin PI3LVD1012 MO-154C/BC 80-Pin, 150-Mil 18b2 diode DIODE 15B2 diode 18b2 PI3LVD1012BE 18b1 diode 15b2 diode 18b2 10B1 10B2

    10B1

    Abstract: 10B2 12B1 12B2 16B1 16B2 QS3165233 DIODE 15B2
    Text: QS3165233 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS QuickSwitch 32:16 Mux/Demux With 50Ω Damping Resistor QS3165233 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional switches connect inputs


    Original     		PDF QS3165233 56-pin QS3165233 32-bit 16-bit QS316233 QS3162233 MDSL-00245-01 10B1 10B2 12B1 12B2 16B1 16B2 DIODE 15B2

    OZ960

    Abstract: 22B4 diode ZENER c5763 C1904 7A3 zener diode UL796 258C5 58A5 zener diode 7A3 9A2 zener diode
    Text: <XR_PAGE_TITLE> 8 7 6 5 2 3 4 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN C B A DESCRIPTION OF CHANGE 279015 ENGINEERING RELEASED


    Original     		PDF MPC7450 OZ960 22B4 diode ZENER c5763 C1904 7A3 zener diode UL796 258C5 58A5 zener diode 7A3 9A2 zener diode

    SO56-1

    Abstract: IDTQS3165233 QS3165233 10B1 10B2 12B1 12B2 16B1 3414a
    Text: IDTQS3165233 HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX Ω DAMPING RESISTOR WITH 50Ω DESCRIPTION: FEATURES: − − − − − − Enhanced N channel FET with no inherent diode to Vcc


    Original     		PDF IDTQS3165233 56-pin QS3165233 32-bit 16-bit SO56-1) SO56-2) SO56-1 IDTQS3165233 10B1 10B2 12B1 12B2 16B1 3414a

    9b2 diode

    Abstract: DIODE 15B2 10B1 10B2 12B1 12B2 16B1 IDTQS3165233 QS3165233
    Text: IDTQS3165233 HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX Ω DAMPING RESISTOR WITH 50Ω DESCRIPTION: FEATURES: − − − − − − Enhanced N channel FET with no inherent diode to Vcc


    Original     		PDF IDTQS3165233 56-pin QS3165233 32-bit 16-bit SO56-1) SO56-2) 9b2 diode DIODE 15B2 10B1 10B2 12B1 12B2 16B1 IDTQS3165233

    1562B

    Abstract: No abstract text available
    Text: IDTQS316233 HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX FEATURES: • • • • • • DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc Ω bidirectional switches connect inputs to outputs


    Original     		PDF IDTQS316233 QS316233 32-bit 16-bit 1562B

    10B1

    Abstract: 10B2 12B1 12B2 QS3162233 QS316233
    Text: QS316233, QS3162233 QuickSwitch Products High-Speed CMOS QuickSwitch 32:16 Mux/Demux Q QUALITY SEMICONDUCTOR, INC. QS316233 QS3162233 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs


    Original     		PDF QS316233, QS3162233 QS316233 56-pin QS3162233 QS316233 QS3162233, 32-bit 16-bit 10B1 10B2 12B1 12B2

    d449c

    Abstract: 32 inch TV samsung lcd Schematic stm diode C818 B511 N1 CK505M LE88CLPM SI2315BDS-T1 NH82801 Q527 samsung lcd tv power supply schematic
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D OSLO C B Sheet 1. Sheet 2-7. Sheet 8. Sheet 9.


    Original     		PDF BA41-# RHU002N06 d449c 32 inch TV samsung lcd Schematic stm diode C818 B511 N1 CK505M LE88CLPM SI2315BDS-T1 NH82801 Q527 samsung lcd tv power supply schematic

    32 inch TV samsung lcd Schematic

    Abstract: U574 BA41-00717A 27b1 diode BA41-00718A BA41-0071 AP4435 22B2 DIODE 58c3 SLB9635TT1.2
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D SYDNEY C B DRAW : : : : : : SYDNEY MAIN BA41-0071#A


    Original     		PDF 965PM BA41-0071 BA41-00717A BA41-00718A TP18631 TP18634 TP18650 TP18635 TP18636 32 inch TV samsung lcd Schematic U574 27b1 diode AP4435 22B2 DIODE 58c3 SLB9635TT1.2

    C547 c

    Abstract: BA41-00811A BA41-00791A R7790 Samsung Praha SRI Rev 1_0 keyboard and touchpad schematic ap4435gm Socket AM2 smd diode code F45 21Ring
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED 4 BY SAMSUNG. D Table of Contents Sheet 1. COVER Sheet 2-6. DIAGRAM Block/Power & ANNOTATIONS


    Original     		PDF BA41-00791A BA41-00792A BA41-00811A 800MHz) RS600ME SB600 0033nF 018nF 022nF 027nF C547 c R7790 Samsung Praha SRI Rev 1_0 keyboard and touchpad schematic ap4435gm Socket AM2 smd diode code F45 21Ring

    BA41-00791A

    Abstract: D51233 218S6ECLA21FG BA41-00811A R7790 AP680AGM Samsung Praha SRI Rev 1_0 HDR-10P-1R-SMD 88E8039 RS600ME
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED 4 BY SAMSUNG. D Table of Contents Sheet 1. COVER Sheet 2-6. DIAGRAM Block/Power & ANNOTATIONS


    Original     		PDF 800MHz) RS600ME SB600 BA41-00791A BA41-00792A BA41-00811A 022nF 027nF 047nF 0033nF D51233 218S6ECLA21FG R7790 AP680AGM Samsung Praha SRI Rev 1_0 HDR-10P-1R-SMD 88E8039 RS600ME

    2B2 bridge rectifier ic

    Abstract: 1B4 SMD 6A8 SMD 4B1 bridge rectifier HFJ11-1G02E Resistor Network Rpack 10K 24vdc5a 6A855 CB47 RECTIFIER RPB11
    Text: Rev: 102108 DS33M30 Demo Kit General Description Features The DS33M30 demo kit DK is an easy-to-use evaluation board for the DS33M30 Ethernet-overSONET/SDH devices. Maxim’s ChipView software is provided with the demo kit, giving point-and-click access to configuration and status registers from a


    Original     		PDF DS33M30 DS33M30 1000PF, DS33M30DK02A0 DP83865BVH CR-14 2B2 bridge rectifier ic 1B4 SMD 6A8 SMD 4B1 bridge rectifier HFJ11-1G02E Resistor Network Rpack 10K 24vdc5a 6A855 CB47 RECTIFIER RPB11

    ST T4 D560

    Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents CICHLID 3 CPU :Intel Yonah 533/667 Merom


    Original     		PDF YONAH667 Sheet18. Sheet19. Sheet20 Sheet24. Sheet25 Sheet29. Sheet30 Sheet32. Sheet33. ST T4 D560 ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4

    20B5

    Abstract: H47895-001 G46739-001 20B5 voltage G83568-001 A36096
    Text: CR-1 : @GALILEO_LIB.GALILEO SCH_1 :PAGE1 8 7 6 5 4 3 2 1 D D GALILEO GEN2 INTEL QUARK X1000 C C FAB H PB: H48142-207 PBA:H48125-800 B LB6V1 LB1 EMPTY B LB3 LABEL LABEL WEEE_LABEL_9X5MM A WEEE 1500X500_TARGET SERIAL NUMBER 1375X250_TARGET MAC ADDRESS LABEL


    Original     		PDF X1000 H48142-207 H48125-800 1500X500 1375X250 H38681 0402LF 20B5 H47895-001 G46739-001 20B5 voltage G83568-001 A36096

    B30C300

    Abstract: 29A4 samsung electronics 10K 34C1 TP678 gfx E3 diode diode 39b2 TP730 NC7SZ175P6X_NL HDR-10P-SMD
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


    Original     		PDF BA41-00574A YONAH667 Sheet18. Sheet19. 047nF RHU002N06 12-C4 B30C300 29A4 samsung electronics 10K 34C1 TP678 gfx E3 diode diode 39b2 TP730 NC7SZ175P6X_NL HDR-10P-SMD

    schematic diagram hdmi to rca

    Abstract: GFX SE DIODE LE88CLPM NH82801HEM TP16355 RAS 0510 SUN HOLD sun hold RAS 0510 SUN HOLD, RAS 0510 f8 vga nb8p BA41-00745A
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D MILAN CPU : Chip Set : Remarks :


    Original     		PDF BA41-00745A SW501 A3212ELH/HED55XXU12 100nF MT504 TP17294 TP17297 schematic diagram hdmi to rca GFX SE DIODE LE88CLPM NH82801HEM TP16355 RAS 0510 SUN HOLD sun hold RAS 0510 SUN HOLD, RAS 0510 f8 vga nb8p

    Untitled

    Abstract: No abstract text available
    Text: QuickSwitch Products QS316233 High-Speed CMOS QS3162233 QuickSwitch 32:16 Mux/Demux & c lu c T O R , iN c . FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 5£2 bidirectional switches connect inputs to outputs • Zero propagation delay, zero ground bounce


    OCR Scan     		PDF QS316233 QS3162233 QS316233 QS3162233, 32-bit 16-bit QS3162233

    12B220

    Abstract: PS8178 561b
    Text: f j j PER ICOM 3.3V, Synchronous 16-Bit to 32-Bit FET Mux/Demux BusSwitch Product Features Product Description • Near-Zero propagation delay. • 5il Switches Connect Between Two Ports • Packages Available : - 56-pin 240mil Wide Thin Plastic TSSOP A56


    OCR Scan     		PDF 16-Bit 32-Bit 56-pin 240mil 300mil 35micron PI3B16232 12B220 PS8178 561b