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    13B1A Search Results

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    13B1A Price and Stock

    Nexperia PZU13B1A,115

    DIODE ZENER 13V 320MW SOD323
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    DigiKey PZU13B1A,115 Cut Tape 300 1
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    PZU13B1A,115 Digi-Reel 300
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    PZU13B1A,115 Reel 3,000
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    Rochester Electronics PZU13B1A,115 8,329 1
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    TTI PZU13B1A,115 Reel 3,000
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    Hirose Electric Co Ltd DG13-B1AA

    Motors & Solenoids
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    DigiKey DG13-B1AA Tray 200
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    Avnet Americas DG13-B1AA Tray 16 Weeks 200
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    Newark DG13-B1AA Bulk 200
    • 1 $0.82
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    Avnet Abacus DG13-B1AA Reel 14 Weeks 8,000
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    Sager DG13-B1AA 1
    • 1 $0.68
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    • 1000 $0.58
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    Cherry Industrial Solutions DG13-B1AA

    SWITCH SNAP ACTION SPDT 3A 125V
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    Nexperia PZU13B1A-QX

    DIODE ZENER 12.75V 320MW SOD323
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    DigiKey PZU13B1A-QX Reel 3,000
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    TTI PZU13B1A-QX Reel 3,000
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    Carling Technologies L13B1AD01-DNZY3-400

    SWITCH ROCKER SPST-NC 15A 24V
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    DigiKey L13B1AD01-DNZY3-400 Bulk 10
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    Mouser Electronics L13B1AD01-DNZY3-400
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    Master Electronics L13B1AD01-DNZY3-400
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    • 100 $11.71
    • 1000 $8.7
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    Sager L13B1AD01-DNZY3-400 1
    • 1 $22.03
    • 10 $20.17
    • 100 $16.65
    • 1000 $8.45
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    13B1A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC2510

    Abstract: No abstract text available
    Text: 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm l Specified 28V, 28MHz Characteristics l Output Power : Po = 150WPEP (Min.) l Power Gain : Gp = 12.2dB (Min.)


    Original     		2SC2510 30MHz 28MHz 150WPEP -30dB 001MHz, 000MHz, 001MHz 2SC2510 PDF

    2SC2290

    Abstract: 2SC2290A
    Text: 2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 60WPEP (Min.) z Power Gain : Gp = 11.8dB (Min.)


    Original     		2SC2290A 30MHz 28MHz 60WPEP -30dB 2SC2290 2SC2290A PDF

    2SC2290

    Abstract: TRANSISTOR 2sC2290 2SC2290 equivalent 60WpEp
    Text: 2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm l Specified 12.5V, 28MHz Characteristics l Output Power : Po = 60WPEP (Min.) l Power Gain : Gp = 11.8dB (Min.)


    Original     		2SC2290 30MHz 28MHz 60WPEP -30dB 001MHz 000MHz, 2SC2290 TRANSISTOR 2sC2290 2SC2290 equivalent 60WpEp PDF

    2SC2879

    Abstract: 2sc2879 transistor
    Text: 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm l Specified 12.5V, 28MHz Characteristics l Output Power : Po = 100WPEP l Power Gain : Gp = 13dB l Collector Efficiency


    Original     		2SC2879 30MHz 28MHz 100WPEP -24dB 28MHz 000MHz 001MHz 2SC2879 2sc2879 transistor PDF

    2SC2510

    Abstract: 2SC2510A
    Text: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm z Specified 28V, 28MHz Characteristics z Output Power : Po = 150WPEP (Min.) z Power Gain : Gp = 12.2dB (Min.)


    Original     		2SC2510A 30MHz 28MHz 150WPEP -30dB 2SC2510 2SC2510A PDF

    sec 2sc5088

    Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
    Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and


    Original     		BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS PDF

    2SC2879A

    Abstract: 2sc2879 transistor 2SC2879 2sc2879 equivalent toshiba 2sc2879
    Text: 2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 100WPEP z Power Gain : Gp = 13dB z Collector Efficiency


    Original     		2SC2879A 30MHz 28MHz 100WPEP -24dB 2SC2879A 2sc2879 transistor 2SC2879 2sc2879 equivalent toshiba 2sc2879 PDF

    2SC2510

    Abstract: 2sc2510 transistor application
    Text: 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150WPEP (Min.) Power Gain : Gp = 12.2dB (Min.)


    Original     		2SC2510 30MHz 28MHz 150WPEP -30dB 001MHz, 000MHz, 001MHz 2SC2510 2sc2510 transistor application PDF

    2SC2879

    Abstract: toshiba 2sc2879 2SC2879A 2sc2879 equivalent
    Text: 2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 100WPEP z Power Gain : Gp = 13dB z Collector Efficiency


    Original     		2SC2879A 30MHz 28MHz 100WPEP -24dB 2SC2879 toshiba 2sc2879 2SC2879A 2sc2879 equivalent PDF

    2sc2290

    Abstract: No abstract text available
    Text: 2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60WPEP (Min.) Power Gain : Gp = 11.8dB (Min.)


    Original     		2SC2290A 30MHz 28MHz 60WPEP -30dB 2-13B1A 2sc2290 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150WPEP (Min.) Power Gain : Gp = 12.2dB (Min.)


    Original     		2SC2510A 30MHz 28MHz 150WPEP -30dB 2-13B1A PDF

    2SC2510A

    Abstract: 2sc2510 transistor application 2SC2510
    Text: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm z Specified 28V, 28MHz Characteristics z Output Power : Po = 150WPEP (Min.) z Power Gain : Gp = 12.2dB (Min.)


    Original     		2SC2510A 30MHz 28MHz 150WPEP -30dB 2SC2510A 2sc2510 transistor application 2SC2510 PDF

    toshiba 2sc2879

    Abstract: 2sc2879 equivalent
    Text: 2SC2879A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 100WPEP z Power Gain : Gp = 13dB z Collector Efficiency


    Original     		2SC2879A 30MHz 28MHz 100WPEP -24dB 13Besented toshiba 2sc2879 2sc2879 equivalent PDF

    2SC2290 equivalent

    Abstract: 2SC2290A 2SC2290 60WPEP
    Text: 2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm z Specified 12.5V, 28MHz Characteristics z Output Power : Po = 60WPEP (Min.) z Power Gain : Gp = 11.8dB (Min.)


    Original     		2SC2290A 30MHz 28MHz 60WPEP -30dB 2SC2290 equivalent 2SC2290A 2SC2290 60WPEP PDF

    2SC2879

    Abstract: 2sc2879 equivalent 2sc2879 transistor toshiba 2sc2879 100WPEP dust collector
    Text: 2SC2879 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2879 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS LOW SUPPLY VOLTAGE USE Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 100WPEP Power Gain : Gp = 13dB Collector Efficiency


    Original     		2SC2879 30MHz 28MHz 100WPEP -24dB 28MHz 000MHz 001MHz 2SC2879 2sc2879 equivalent 2sc2879 transistor toshiba 2sc2879 100WPEP dust collector PDF

    74l00

    Abstract: 2SC1764 12ID 1S1555 20ID 80WpeP
    Text: TOSHIBA {D IS CRETE/ OPTO } 909 7 2 5 0 TO SHIBA DE DDDTMtD O I CD IS C R E T E / O P T O SI LICON NPN E P IT A X IA L P L A N A R TYPE Unit in mm 2 ~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 28V SUPPLY VOLTAGE USE) FEATURES : • Specified 28V, 28MHz Characteristics


    OCR Scan     		30MHz 28MHz 80Wpep -30dB 100mA, 74l00 2SC1764 12ID 1S1555 20ID 80WpeP PDF

    SF5D14

    Abstract: sf5 toshiba SF5B thyristor H 65 TB 16A TOSHIBA THYRISTOR SF5B14
    Text: THYRISTOR SILICON DIFFUSED TYPE MEDIUM power control SF5 B,D,G 14 Unit in mm applications. 01à7MAX. FE A T U R E S : . Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Vd r m Vrr m . Average On-State Current lT(AV)=5A i =xoo~-400V • JEDEC TO-66 Package.


    OCR Scan     		-400V SF5B14 SF5D14 SF5G14 TC-16A, TB-23 13B1A sf5 toshiba SF5B thyristor H 65 TB 16A TOSHIBA THYRISTOR PDF

    100WPEP

    Abstract: 2SC2879 2sc2879 equivalent
    Text: SILICON NPN EPITAXIAL PLAN AR TY P E 2SC2879 2 -30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. Unit in m m LOW SUPPLY VOLTAGE USE FEATURES : . S p e c i f i e d 1 2 .5 V, : Output Power : Minimum Gain : Efficiency 28MHz Characteristics : P o=100WpEP : Gpe=10dB


    OCR Scan     		2SC2879 -30MHz 28MHz 100WpEP 150pF 022AF 47/iF 044/uF 100WPEP 2SC2879 2sc2879 equivalent PDF

    jointal Z

    Abstract: NIKKEI JOINTAL 200 grease nikkei S-200 nikkei S200 25d13 nikkei jointal nikkei S-200 25D-13 nikkei S-200 grease 10D-13
    Text: 4. HANDLING PRECAUTION When using sem i-conductors, supply o f thermal and/or mechanical stress to devices by improper handling o f them may result in signific­ ant deterioration in their electric characteristics and/or reliability. This section describes important notes for


    OCR Scan     		220AB 10B1B\ 10A1B/ 13-10F1A 16D1A) jointal Z NIKKEI JOINTAL 200 grease nikkei S-200 nikkei S200 25d13 nikkei jointal nikkei S-200 25D-13 nikkei S-200 grease 10D-13 PDF

    2N2222A-PL

    Abstract: 2sc3883 2sc9018 BF759 2N3055-DIV SS8050 smd 2S-C3883 2SC945 smd smd 2n3055 bu415a
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 T p a H 3 M CTopbi N P N c o p T M p o B K a n o H a n p flw e H M r o Kofl: BFP520 BFG410W BFP405 BFP420 BFP450 BFP540 2SC5088 BFG235 BFR91A BF763 BFG540W BFG94 BFR90A BFR91 BFR92A BFR93A


    OCR Scan     		BFP520 OT343R BFG410W BFP405 BFP420 BFP450 2N2222A-PL 2sc3883 2sc9018 BF759 2N3055-DIV SS8050 smd 2S-C3883 2SC945 smd smd 2n3055 bu415a PDF