STMicroelectronics NAND256W3A
Abstract: NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
STMicroelectronics NAND256W3A
NAND01G-A
NAND128-A
NAND256-A
NAND512-A
VFBGA63
WSOP48
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C4858
Abstract: No abstract text available
Text: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, NAND flash memories Features • ● High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications
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NAND128-A
NAND256-A
128-Mbit
256-Mbit,
528-byte/264-word
256-Mbit
32-Mbit
C4858
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WSOP48
Abstract: No abstract text available
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
WSOP48
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NAND01G-A
Abstract: NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48 nand TSOP48 SE5055
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
NAND01G-A
NAND128-A
NAND256-A
NAND512-A
VFBGA63
WSOP48
nand TSOP48
SE5055
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Samsung k9f1208u
Abstract: SAMSUNG NAND FLASH samsung nand WSOP48 K9F28 NAND FLASH BGA samsung 1Gb nand flash NAND01G cache program "NAND Flash" 128M NAND Flash Memory
Text: AN1838 APPLICATION NOTE How to Use an ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use an STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for a Samsung device.
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AN1838
NAND128-A,
NAND256-A,
NAND512-A,
NAND01G-A,
128Mbits
Samsung k9f1208u
SAMSUNG NAND FLASH
samsung nand
WSOP48
K9F28
NAND FLASH BGA
samsung 1Gb nand flash
NAND01G cache program
"NAND Flash"
128M NAND Flash Memory
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Untitled
Abstract: No abstract text available
Text: ST7FLCD1 8-bit MCU for LCD monitors with 60 KBytes Flash, 2 KBytes RAM, 2 DDC ports and infrared controller Features • 60 KBytes Flash program memory ■ In-circuit debugging and programming ■ In-application programming ■ Data RAM: up to 2 KBytes 256 bytes stack, 2
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Untitled
Abstract: No abstract text available
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
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toshiba nand tc58
Abstract: toshiba Nand flash toshiba Nand part numbering tc58 flash samsung tc58 Toshiba NAND TOSHIBA TC58 cmos memory -NAND NAND256-A TOSHIBA part numbering VFBGA63
Text: AN1839 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Toshiba Device This Application Note describes how to use an STMicroelectronics Small Page 528 Byte/ 264 Word Page NAND Flash memory, to replace an equivalent Toshiba memory, in a application initially designed for a
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AN1839
NAND128-A,
NAND256-A,
NAND512-A,
NAND01G-A,
128Mbits
toshiba nand tc58
toshiba Nand flash
toshiba Nand part numbering
tc58 flash
samsung tc58
Toshiba NAND
TOSHIBA TC58 cmos memory -NAND
NAND256-A
TOSHIBA part numbering
VFBGA63
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SAMSUNG NAND FLASH
Abstract: Samsung 256 Gbit nand NAND01G cache program Samsung k9f1208u K9F1208U0M NAND FLASH BGA Samsung Nand tbga 6x8 Package WSOP48 bga 6x8
Text: AN1838 APPLICATION NOTE How to Use a Small Page ST NAND Flash Memory in an Application Designed for a Samsung Device This Application Note describes how to use a Small Page 528 Byte/264 Word Page STMicroelectronics NAND Flash memory, to replace an equivalent Samsung memory, in an application initially designed for
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AN1838
Byte/264
NAND128-A,
NAND256-A,
NAND512-A,
NAND01G-A,
128Mbits
SAMSUNG NAND FLASH
Samsung 256 Gbit nand
NAND01G cache program
Samsung k9f1208u
K9F1208U0M
NAND FLASH BGA
Samsung Nand
tbga 6x8 Package
WSOP48
bga 6x8
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M1000
Abstract: ICS252 M2000A M2000 M2004-01 M2006-01 M906-02 Integrated Circuit PLL
Text: APPLICATION NOTE Application Note M000-AN-002.PLLSIMREADME M000-AN-002.PLLSIMREADME SAW PLL Simulator Instructions Integrated Instructions SAW PLL Simulator Circuit Systems, Inc. Product Lines M900, M1000, M2000 M900, M1000, M2000 Product Lines INSTALLATION
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M000-AN-002
M1000,
M2000
com/FeedBack/cmbu/m2000
2000/95/98/ME/NT/XP
199707558G
M1000
ICS252
M2000A
M2004-01
M2006-01
M906-02
Integrated Circuit PLL
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OP393
Abstract: 16256S ddc/CI protocol ALI usb CSTCG24M0V51-R0 HE10 ddc2b long range fm transmitter
Text: ST7FLCD1 8-bit MCU for LCD monitors with 60 KBytes Flash, 2 KBytes RAM, 2 DDC ports and infrared controller Features • 60 KBytes Flash program memory ■ In-circuit debugging and programming ■ In-application programming ■ Data RAM: up to 2 KBytes 256 bytes stack, 2
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fbga63 package
Abstract: No abstract text available
Text: NAND128-A NAND256-A 128-Mbit or 256-Mbit 528-byte/264-word page, 1.8 V/3 V, NAND flash memories Features • ● High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications
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NAND128-A
NAND256-A
128-Mbit
256-Mbit
528-byte/264-word
32-Mbit
fbga63 package
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CR10
Abstract: M58WR032EB M58WR032ET VFBGA56
Text: M58WR032ET M58WR032EB 32 Mbit 2Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.65V to 2.2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)
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M58WR032ET
M58WR032EB
54MHz
100ns
CR10
M58WR032EB
M58WR032ET
VFBGA56
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WSOP48
Abstract: NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 NAND01GR
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
WSOP48
NAND01G-A
NAND128-A
NAND256-A
NAND512-A
VFBGA63
NAND01GR
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st nand
Abstract: FBGA63
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
TSOP48
USOP48
st nand
FBGA63
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NAND FLASH BGA
Abstract: nand flash 128mbit VFBGA63 WSOP48 NAND01G-A NAND128-A NAND128R3A NAND256-A NAND512-A NAND256A
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
NAND FLASH BGA
nand flash 128mbit
VFBGA63
WSOP48
NAND01G-A
NAND128-A
NAND128R3A
NAND256-A
NAND512-A
NAND256A
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8051 ps2 keyboard asm program
Abstract: NEC720100 an1815 DK3200 ps2 convert a usb USB CONNECTION CIRCUIT AN1843 uPSD32 7508H 19E0H
Text: AN1886 APPLICATION NOTE Low Speed USB Design Using µPSD This application note describes the design of a low-speed USB function for the uPSD32xxA MCU series see Table 2. , and how to use the µPSD USB simple demonstration program. It gives answers to frequently asked questions, and to design issues (such as those to do with the newer USB 2.0 host controllers, see Table 1.) and gives designers the basic elements to design applications using the low-speed USB
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AN1886
uPSD32xxA
8051 ps2 keyboard asm program
NEC720100
an1815
DK3200
ps2 convert a usb
USB CONNECTION CIRCUIT
AN1843
uPSD32
7508H
19E0H
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NS4159
Abstract: 528-byte
Text: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, SLC NAND flash memories Features • ● ■ High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage
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NAND128-A
NAND256-A
128-Mbit
256-Mbit,
528-byte/264-word
256-Mbit
32-Mbit
NS4159
528-byte
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USOP48
Abstract: NAND512-A STMicroelectronics NAND256W3A FLASH 512Mb 1.8V VFBGA63 SLC ball 128 mcp IBIS Models TSOP48 outline NAND01G-A NAND128-A NAND128W3A
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
USOP48
NAND512-A
STMicroelectronics NAND256W3A
FLASH 512Mb 1.8V VFBGA63 SLC
ball 128 mcp
IBIS Models
TSOP48 outline
NAND01G-A
NAND128-A
NAND128W3A
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TFBGA55
Abstract: NAND512-A bga 6x8 Package NAND01G-A NAND128-A NAND256-A VFBGA63
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
TFBGA55
NAND512-A
bga 6x8 Package
NAND01G-A
NAND128-A
NAND256-A
VFBGA63
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Untitled
Abstract: No abstract text available
Text: TH I S DRAW I NG IS UNPUBLI SHED. RELEASED BY C O P Y R I G HT 2 0 . 2. TYCO ELECTRONICS CORPORATION. FOR ALL 20 PUBLICATION R 1G H T S LOC RESERVED. ALL ASSEMBLY PANEL TH DIMENSIONS C K NE S S : 6 mm ARE ONLY. ON P A G E E OR HAS N OT LTR DESCRIPTION 2. REEERENCE
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0A00-Ã
0I9-05
24MAR2004
13APR2004
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A92-52080
Abstract: AMP PBT-GF20 1718230-1
Text: l i i i h i r n n r n n i i SHFU- T ïït _ ¿ ¿ £ m u u y n R E L E A S E D FOR P U B L I C A T I O N F R E I FUER V E R O E F F E N T L I CHUNG rlLMIL zT UI Jl Ll i l JLI I LUTI C O P Y R I G HT 2 0 0 4 BY TYCO ELECTRONICS CORPORATION ALL ALLE 2004 ••lATED W I T H :
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A92-52080
05JAN2004
13APR2004
A92-52080
AMP PBT-GF20
1718230-1
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TYCO PBT-GF20
Abstract: AMP PBT-GF20 PBT-GF20 Tyco 108-18 PBT-GF-20 1703020
Text: TYCO ELEC TR O N IC S C O RPORATIO N. LOC 967650 CODING A Kodierung A R E V AI AS wie D I ST P LTR D E S C R I P T I ON DATE DWN APVD BESEHREIBUNG PROJEKT gezeichnet I S I O N S AENDERUNGEN NR. : NEW neue A A92-52080 D R A W ING Z e ichnung A1 NOTE A2 DRAW ING
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IGHT2004
A92-52080
05JAN2004
13APR2004
E-10-002780
05JAN2011
PBT-GF20
TYCO PBT-GF20
AMP PBT-GF20
Tyco 108-18
PBT-GF-20
1703020
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materal
Abstract: D 467
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION - ,- ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. D C .0 5 4 RECOMMENDED HOLE DIA MOUNTING PATTERN B A OBSOLETE OBSOLETE — — — — — — — — V/ZZZZ/ZZ/AM W ///Z///M W /ZZZZZ///Á VZZ/WZZZf//
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31MAR2000
0G3A-0170-05
30JUN05
13APRZ004
13APR2004
materal
D 467
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