Untitled
Abstract: No abstract text available
Text: MS1408 RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS • • • • • • • FM CLASS C TRANSISTOR FREQUENCY 136MHz VOLTAGE 28V POWER OUT 20W POWER GAIN 8.2dB EFFICIENCY 55% COMMON EMITTER DESCRIPTION: The MS1408 is a 28 volt epitaxial silicon NPN planar transistor
|
Original
|
PDF
|
MS1408
108-152MHz
136MHz
MS1408
|
MS1204
Abstract: 136MHz NPN planar RF transistor SD1019 max6535
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1204 RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • CLASS C TRANSISTOR FREQUENCY 136MHz VOLTAGE 28V POWER OUT 80W POWER GAIN 9.0dB
|
Original
|
PDF
|
MS1204
136MHz
SD1019
MS1204
136MHz
NPN planar RF transistor
max6535
|
Untitled
Abstract: No abstract text available
Text: MS1408 RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS Features • • • • • • • FM CLASS C TRANSISTOR FREQUENCY 136MHz VOLTAGE 28V POWER OUT 20W POWER GAIN 8.2dB EFFICIENCY 55% COMMON EMITTER DESCRIPTION: The MS1408 is a 28 volt epitaxial silicon NPN planar transistor
|
Original
|
PDF
|
MS1408
108-152MHz
136MHz
MS1408
|
NPN planar RF transistor
Abstract: MS1408 136MHz
Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1408 RF AND MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS Features • • • • • • • FM CLASS C TRANSISTOR FREQUENCY 136MHz VOLTAGE 28V POWER OUT 20W POWER GAIN 8.2dB
|
Original
|
PDF
|
MS1408
108-152MHz
136MHz
MS1408
Emitter200
NPN planar RF transistor
136MHz
|
36GB
Abstract: VSC7216-01 VSC7216-02 VSC837
Text: PHYSICALDATACOM LAYER PRODUCT PRODUCT VSC7216-02 VSC7216-02 Low Power Quad 1.25Gb/s Backplane Transceiver S P E C I F I C AT I O N S : !REFCLK: 24.5 - 136MHz !Tx/Rx REFCLK Offset: 200 ppm !Serial Input Differential Terminations Adjustable Between 100Ω and 150Ω
|
Original
|
PDF
|
VSC7216-02
VSC7216-02
25Gb/s
136MHz
VSC7216-01
256-pin
8B/10B
36GB
VSC7216-01
VSC837
|
Untitled
Abstract: No abstract text available
Text: Specification for an LC Triplexer Filter MtronPTI P/N LF9287 I. General & Electrical Requirements: 1. Filter 1 Passband: 136MHz to 174MHz Insertion Loss IL, within the passband : < 0.8dB Return Loss (within the Passband): > 17dB Input Signal Power: ≤ 60-watts CW
|
Original
|
PDF
|
LF9287
136MHz
174MHz
60-watts
380MHz
520MHz
762MHz
870MHz
35-watts
|
TDA7528
Abstract: STA680Q Xtensa AM FM TUNER module car STA680 HD radio LQFP144 STA3004 MMC spi circuit diagram of 9.2 surround sound
Text: STA680 HD Radio baseband receiver Preliminary data Features General • HD Radio signal decoding for AM and FM digital audio ■ Tensilica™ signal/audio processing core architecture running up to 166 MHz ■ Hardware support for conditional access one-time programmable 640-bit memory
|
Original
|
PDF
|
STA680
640-bit
12x12x1
LQFP144
20x20x1
TDA7528
STA680Q
Xtensa
AM FM TUNER module car
STA680
HD radio
LQFP144
STA3004
MMC spi
circuit diagram of 9.2 surround sound
|
SD1274-01
Abstract: M113 F136
Text: SD1274-01 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY • 160 MHz Figure 1. Package ■ 13.6 VOLTS ■ COMMON EMITTER ■ POUT = 30 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1274-01 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for
|
Original
|
PDF
|
SD1274-01
SD1274-01
M113
F136
|
RD01MUS1
Abstract: adj 2576
Text: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-UHF-060-A Date : 19th Oct. 2004 Rev.date : 22th June. 2010 Prepared : M.Wada, S.Kametani Confirmed : T.Ohkawa Taking change of Silicon RF By MIYOSHI Electronics SUBJECT: RD01MUS1 RF Characteristics at Vdd=3.6/ 4.5/ 7.2V
|
Original
|
PDF
|
AN-UHF-060-A
RD01MUS1
RD01MUS1:
135MHz
100mA
527MHz
0mm/50
AN-UHF-060
adj 2576
|
LTM9001-AD
Abstract: LTM9001-AA LTM9001V-AD LTM9001CV-BA
Text: LTM9001-Ax/LTM9001-Bx 16-Bit IF/Baseband Receiver Subsystem FEATURES DESCRIPTION n The LTM 9001 is an integrated system in a package SiP that includes a high-speed 16-bit A/D converter, matching network, anti-aliasing filter and a low noise, differential
|
Original
|
PDF
|
LTM9001-Ax/LTM9001-Bx
16-Bit
300MHz.
16-Bit,
130Msps
1250mW,
100dB
LTC2209
LTM9001-AD
LTM9001-AA
LTM9001V-AD
LTM9001CV-BA
|
MRF660
Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040
|
Original
|
PDF
|
2N2876
2N3137
2N3375
2N3553
2N3632
2N3733
2N3924
2N3926
2N3927
2N3948
MRF660
MRF485
KTC1969
MRF150MP
MRF496
2SC2029B
MRF648
MRF646
MRF429MP
MRF648 Data Sheet
|
DCRO1317-5
Abstract: No abstract text available
Text: VOLTAGE CONTROLLED OSCILLATOR SURFACE MOUNT MODEL: DCRO1317-5 136 - 174 MHz OPTIMIZED BANDWIDTH FEATURES: ► Exceptional Phase Noise Performance ► Small Size, Surface Mount ► Lead Free Patented REL-PRO Technology ► Planar Resonator Construction Phase Noise
|
Original
|
PDF
|
DCRO1317-5
136MHz
174MHz
EV31369834;
DCRO1317-5
|
136-174MHz
Abstract: ra60h1317m1a-101 RA60H1317M1A RA60H1317M1 174MHZ
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO TENTATIVE DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to
|
Original
|
PDF
|
RA60H1317M1A
136-174MHz
RA60H1317M1A
60-watt
174-MHz
ra60h1317m1a-101
RA60H1317M1
174MHZ
|
Untitled
Abstract: No abstract text available
Text: 19-2301; Rev 1; 10/06 KIT ATION EVALU E L B AVAILA LNAs with Step Attenuator and VGA The MAX2371/MAX2373 wideband low-noise amplifier LNA ICs are designed for direct conversion receiver (DCR) or very low intermediate frequency (VLIF) receiver applications. They contain single-channel, single-ended
|
Original
|
PDF
|
100MHz
MAX2371/MAX2373
|
|
|
DCRO1317-5
Abstract: 1773m
Text: VOLTAGE CONTROLLED OSCILLATOR SURFACE MOUNT MODEL: DCRO1317-5 136 - 174 MHz OPTIMIZED BANDWIDTH FEATURES: ► Exceptional Phase Noise Performance ► Small Size, Surface Mount ► Lead Free Patented REL-PRO Technology ► Planar Resonator Construction Phase Noise
|
Original
|
PDF
|
DCRO1317-5
136MHz
174MHz
EV31369834;
DCRO1317-5
1773m
|
AN5050
Abstract: AN-5050 FIN7216-01
Text: Fairchild Semiconductor Application Note April 2003 Revised April 2003 FIN7216-01 Frequently Asked Questions The following questions and respective answers are intended to present information on Fairchild’s Multi-Gigabit Quad PHY, the FIN7216-01, that have commonly been
|
Original
|
PDF
|
FIN7216-01
FIN7216-01,
8B/10B
10-bit
AN5050
AN-5050
|
RD07MVS1
Abstract: micro strip line
Text: MITSUBISHI APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-UHF-018-B Date : 12th jun. 2003 Prepared : M.Wada S.Kametani Confirmed : T.Ohkawa RD07MVS1 RF characteristics data SUBJECT: SUMMARY: This application note show the RF characteristics Pin vs. Pout characteristics data and
|
Original
|
PDF
|
AN-UHF-018-B
RD07MVS1
RD07MVS1.
RD07MVS1:
025XA"
031AA"
470MHz
136MHz
136MHz)
155MHz
micro strip line
|
Untitled
Abstract: No abstract text available
Text: Multi-Gigabit Interconnect Chip with Extended Temperature Range FEATURES ● Extended Temperature Operation: -40°C ambient to 100°C (case) ● Four ANSI X3T11 Fibre Channel and IEEE 802.3z Gigabit Ethernet-Compliant Transceivers ● Over 8Gb/s Duplex Raw Data Rate
|
Original
|
PDF
|
X3T11
8B/10B
98Gb/s
36Gb/s
49Gb/s
68Gb/s
G52416,
1-800-VITESSE
|
VHF lna with agc
Abstract: 50-836-0 016692 925103 MAX2371 MAX2371EGC MAX2373 MAX2373EGC MAX2373ETC T1233
Text: 19-2301; Rev 1; 10/06 KIT ATION EVALU E L B AVAILA LNAs with Step Attenuator and VGA The MAX2371/MAX2373 wideband low-noise amplifier LNA ICs are designed for direct conversion receiver (DCR) or very low intermediate frequency (VLIF) receiver applications. They contain single-channel, single-ended
|
Original
|
PDF
|
MAX2371/MAX2373
100MHz
VHF lna with agc
50-836-0
016692
925103
MAX2371
MAX2371EGC
MAX2373
MAX2373EGC
MAX2373ETC
T1233
|
RA60H1317M1
Abstract: No abstract text available
Text: <Silicon RF Power Modules > RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to 174-MHz range. The battery can be connected directly to the drain of the
|
Original
|
PDF
|
RA60H1317M1A
136-174MHz
RA60H1317M1A
60-watt
174-MHz
RA60H1317M1
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Multilayer Chip Inductors LK series LK1608R27M-T Features Item Summary 0.27 H(±20%), 100mA, 0603 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 4000pcs Products characteristics table External Dimensions
|
Original
|
PDF
|
LK1608R27M-T
100mA,
4000pcs
25MHz
100mA
136MHz
15min
|
Untitled
Abstract: No abstract text available
Text: OPA655 B U R R - B R O W N <i [ ] Wideband, Unity Gain Stable, FET-lnput OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • 400MHz UNITY GAIN BANDWIDTH The OPA655 combines a very wideband, unity gain stable, voltage feedback op amp with a FET input stage to offer an ultra high dynamic range amplifier
|
OCR Scan
|
PDF
|
OPA655
400MHz
OPA655
1012Q
17313LS
|
Untitled
Abstract: No abstract text available
Text: 17313bS DDEbMMÔ S3R OPA655 BU RR - BROW N Wideband FET-lnput OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • 400MHz UNITY GAIN BANDWIDTH • LOW INPUT BIAS CURRENT: 5pA The OPA655 combines a very wideband, unity gain stable, voltage feedback op amp with a FET input
|
OCR Scan
|
PDF
|
17313bS
OPA655
400MHz
OPA655
1012Q
ZZ182
|
Untitled
Abstract: No abstract text available
Text: H m « n i c i v i r u s jr » e m progress sy i i t i f f 140 C o m m e rc e D rive M o n tg o m eryviile , PA 1833 6-10 13 ~ T e j ; | 1 5 6 3 y1 _9 8 4 0 S D « 1 0 1 9 RF & MICROWAVE TRANSISTORS 108.152MHz APPLICATIONS * C U S S C T R A N S ÌS T O R
|
OCR Scan
|
PDF
|
152MHz
13SMH2
SP1Q19
SD1019
C8150PFUNELCO
22GpP
SD1Q19
|
