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    PEI Genesis TV06RW-21-35BD

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    DigiKey TV06RW-21-35BD Bulk 61 1
    • 1 $85.22
    • 10 $73.86
    • 100 $51.13
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    PEI Genesis CTVS06RF-11-35BD

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    DigiKey CTVS06RF-11-35BD Bag 29 1
    • 1 $99.4
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    PEI Genesis TV07RW-21-35BD

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    DigiKey TV07RW-21-35BD Bag 21 1
    • 1 $127.14
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    TE Connectivity DTS20F11-35BD

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    DigiKey DTS20F11-35BD Bag 50
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    FDH Electronics DTS20F11-35BD 23 1
    • 1 $34.916
    • 10 $29.096
    • 100 $28.241
    • 1000 $26.306
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    TE Connectivity DTS20F21-35BD

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    FDH Electronics DTS20F21-35BD 17 1
    • 1 $34.869
    • 10 $29.058
    • 100 $28.203
    • 1000 $26.271
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    135 BD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    30RF35

    Abstract: VJ1206Y104KXB smd transistor equivalent table
    Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 01 — 21 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1.


    Original     		PDF BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 30RF35 VJ1206Y104KXB smd transistor equivalent table

    transistor K 1352

    Abstract: C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 BLF6G27-135 BLF6G27LS-135 C4532X7R1H475M RF35 722 smd transistor
    Text: BLF6G27-135; BLF6G27LS-135 WiMAX power LDMOS transistor Rev. 02 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		PDF BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 transistor K 1352 C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 C4532X7R1H475M RF35 722 smd transistor

    Untitled

    Abstract: No abstract text available
    Text: Product Number: 399-10-135-10-008000 Description: Interconnect Header Spring-Loaded Target Connector Right Angle Mount Single Row Through Hole Plating Code: 10 Shell Plating: 10 " Gold over 100 μ" Nickel # Of Pins Mill-Max Part Number 35 399-10-135-10-008000


    Original     		PDF C36000) C/885 2002/95Annex

    Untitled

    Abstract: No abstract text available
    Text: Product Number: 399-10-135-10-008000 Description: Interconnect Header Spring-Loaded Target Connector Right Angle Mount Single Row Through Hole Plating Code: 10 Shell Plating: 10 " Gold over 100 μ" Nickel # Of Pins Mill-Max Part Number 35 399-10-135-10-008000


    Original     		PDF C36000) C/885 2002/95Annex

    Untitled

    Abstract: No abstract text available
    Text: Product Number: 399-10-135-10-008000 Description: Interconnect Header Spring-Loaded Target Connector Right Angle Mount Single Row Through Hole Plating Code: 10 Shell Plating: 10 " Gold over 100 μ" Nickel # Of Pins Mill-Max Part Number 35 399-10-135-10-008000


    Original     		PDF C36000) C/885Â

    Untitled

    Abstract: No abstract text available
    Text: Product Number: 399-10-135-10-008000 Description: Interconnect Header Spring-Loaded Target Connector Right Angle Mount Single Row Through Hole Plating Code: 10 Shell Plating: 10 " Gold over 100 μ" Nickel # Of Pins Mill-Max Part Number 35 399-10-135-10-008000


    Original     		PDF C36000) C/885 2002/95Annex

    Untitled

    Abstract: No abstract text available
    Text: Product Number: 399-10-135-10-008000 Description: Interconnect Header Spring-Loaded Target Connector Right Angle Mount Single Row Through Hole Plating Code: 10 Shell Plating: 10 " Gold over 100 μ" Nickel # Of Pins Mill-Max Part Number 35 399-10-135-10-008000


    Original     		PDF C36000) C/885Â 2002/95Annex

    Untitled

    Abstract: No abstract text available
    Text: Product Number: 349-10-135-00-560000 Description: Interconnect Header .100 Grid; Surface Mount Pin Header Stub Tail Single Row Surface Mount Plating Code: 10 Shell Plating: 10 " Gold over 100 μ" Nickel # Of Pins Mill-Max Part Number 35 349-10-135-00-560000


    Original     		PDF CG933, CG-933 VRMS/150

    NX7561JB-BC

    Abstract: NX7561JB-BC-AZ
    Text: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE NX7561JB-BC FOR OTDR APPLICATION 135 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 135 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10ms, Duty = 1% NEC's NX7561JB-BC is a 1550 nm developed strained Multiple Quantum Well (st-MQW) structure pulsed laser diode DIP


    Original     		PDF NX7561JB-BC NX7561JB-BC NX7561JB-BC-AZ

    BD3950F

    Abstract: No abstract text available
    Text: Low Quiescent Current System Regulator BD3950F Description BD3950F incorporates a 5.0V output low drop-out regulator, a reset circuit for micro-controller and a voltage sensing comparator function altogether. Very low quiescent current is 135µA. Due to the


    Original     		PDF BD3950F BD3950F 150mA 100mA 100mA

    NTH4G39A1

    Abstract: PTH8L PTh9c32 NTH5G1M PTH9MO4BH471 bh 8550 posistor 16 PTH8 J04TE NTH4G
    Text: WILLOW Technologies Sensors Thermistors - temperature sensing PTH9C32 Series PTC Order Code Curie Point °C Resistance Value (Ω)(at 25°C) Temp. (°C) (at 4.7k Ω) AR(120) BB(100) BD(80) 470±50% 135±10 115±10 95±10 PTH9C32AR471Q-T PTH9C32BB471Q-T


    Original     		PDF PTH9C32 PTH9C32AR471Q-T PTH9C32BB471Q-T PTH9C32BD471Q-T PTH9MO4BH471 TS2F333 PTH9MO4BG471 PTH9MO4BF471 NTH4G39A1 PTH8L NTH5G1M bh 8550 posistor 16 PTH8 J04TE NTH4G

    pin configuration transistor bd140

    Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139


    Original     		PDF BD136 BD138 BD140 BD140-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A pin configuration transistor bd140 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136

    TDOTG242LP

    Abstract: TD242LP OTG242LP MU4032 tdotg242 BGA64 GPIO14 LQFP64 SA1110 TD242L
    Text: Interfacing TD242LP USB Host/Peripheral/OTG Controller to Intel StrongARM SA1110 Reference Design Version 2.2 TransDimension, Inc. 135 Technology Drive Irvine, California 92618 www.transdimension.com TDI Document Number: MU4009 TransDimension Inc. Interfacing TD242LP to Intel StrongArm SA1110 Processor


    Original     		PDF TD242LP SA1110 MU4009 TD242LP SA1110 OTG242LP. ZXM61P02F 74AHC1G08 TDOTG242LP OTG242LP MU4032 tdotg242 BGA64 GPIO14 LQFP64 TD242L

    led Concave

    Abstract: No abstract text available
    Text: LED LAMP FYLFYL- 8033NURC1A 8033NURC1A Package configuration Features: High instensity General purpose leads RoHs complant. 8.05 .317 Descriptions: Radiation pattern. CATHODE 0.5(.02) 2.54(.1) 25.4(1.0) Max1.0(.04) 11.0(.43) 135° 7.95(.313) Dice material: AlGaInP


    Original     		PDF 8033NURC1A 500pcs 000pcs led Concave

    BLF6G10LS-135R

    Abstract: f4 smd transistor mobile rf power amplifier transistor RF35 2360d
    Text: BLF6G10LS-135R Power LDMOS transistor Rev. 01 — 17 November 2008 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G10LS-135R BLF6G10LS-135R f4 smd transistor mobile rf power amplifier transistor RF35 2360d

    8D139

    Abstract: bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135
    Text: 2SC D • 053SbOS 0004332 4 « S I E G ^ - NPN Silicon Transistors ■ T ^ Ï'O T — BD 135 BD 137 SIEMENS AKTIEN6ESELLSCHAF- BD 139 For AF driver and ou tp u t stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126


    OCR Scan     		PDF fl23SbQS 135/BD 137/BD BD135, B0137, B0139 BD137, BD139 BD136. 8D139 bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135

    BD 139 N

    Abstract: transistor BD 141 bd139
    Text: 2SC D • 023Sfc.GS 0QQ4332 4 c NPN Silicon Transistors SIEG D: BD 135 BD 137 BD 139 SIEMENS AKTIEN6ESELLSCHAF For AF driver and output stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to


    OCR Scan     		PDF 023Sfc 0QQ4332 Q62702-D106 Q62702-D106-V1 Q62702-D106-V2 Q62702-D106-V3 Q621758 fl23Sb05 Q00M33b BD 139 N transistor BD 141 bd139

    Untitled

    Abstract: No abstract text available
    Text: D S90C 3201 DS90C3201 3.3V 8 MHz to 135 MHz Dual FPD-Link Transmitter T ex a s In s t r u m e n t s Literature Number: SNLS192C Semiconductor DS90C3201 3.3V 8 MHz to 135 MHz Dual FPD-Link Transmitter General Description Features The DS90C3201 is a 3.3V single/dual FPD-Link 10-bit color


    OCR Scan     		PDF DS90C3201 SNLS192C DS90C3201 10-bit

    TRF-59

    Abstract: M27500 22 ML
    Text: DASH NO CABLES ACCDMMDDATED TRC-50-2 TRC-75-2 8227,BELDEN TWC-78-2 T W E - 124-2 BL782,TIMES BL982,TIMES BL1242,TIMES -7 -9 -A9 A DIM DIM 1 .135 .096 .438 1.716 130 1 . 135 E DIA ASSEMBLE PER .438 .500 TAI-189 .625 .688 ,750 TAI-103 .438 .438 C D FLATS FLATS


    OCR Scan     		PDF TRC-50-2 TRC-75-2 TWC-78-2 BL782 BL982 BL1242 TAI-189 TAI-103 45-25A 4/PL74B TRF-59 M27500 22 ML

    tfk 135

    Abstract: bd139 tfk BD 139 140 BD 139 N tfk bd 137 j BD 139 TFK bd139 tfk 136 BD139 bd 135
    Text: V BD 135 • BD 137 • B D 139 Silicon NPN Epitaxial Planar Power Transistors Anw endungen: Allgemein Im NF-Bereich Applications: General in AF-range Features: Besondere Merkmale: • Verlustleistung 8 W


    OCR Scan     		PDF erlegscheibe32D N125A tfk 135 bd139 tfk BD 139 140 BD 139 N tfk bd 137 j BD 139 TFK bd139 tfk 136 BD139 bd 135

    bd136 N

    Abstract: BD139 p BD136 BD139 to128 bd140 Complement power transistor bd136 st BD140 BD140 pnp transistor
    Text: BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS TO-128 • Complement to B D 135, B D 137 and BD139 respectively A BSO LUTE MAXIMUM RATINGS Characteristic Collector Base Voltage BD136 BD138 BD140 Collector Emitter Voltage BD136


    OCR Scan     		PDF BD136/138/140 O-128 BD139 BD136 BD138 BD140 500mA, bd136 N BD139 p to128 bd140 Complement power transistor bd136 st BD140 BD140 pnp transistor

    BDR-7

    Abstract: No abstract text available
    Text: BDR-7 DB LECTRO he Type BDR-7 DC Resistance Q 135*10% AC Im pe da nce(n ) 150 ±20% Sensitivity(dB) 116±2at1mW Frequency Range(Hz) 250^4000 THD <5% -20 -+ 50 Operating TemperaturefC) Weight (g) 67 f" 2T t0 l6 • *4 Unit:mm - 1-


    OCR Scan     		PDF -444-U24 -44447Uï -44447U BDR-7

    transistor bd 126

    Abstract: TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711
    Text: TELEFUNKEN ELECTRONIC IN electronic 1?E D • Ô^SQO^b O D Q TB 'îS BD 135 • BD 137 • BD 139 Creativeledinotoe*^ T -^ -O S * Silicon NPN Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available


    OCR Scan     		PDF DIN41869 DIN125A 15A3DIN transistor bd 126 TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711

    BD139 N

    Abstract: BD 139 BD139 NPN BD140 BD135 BD136
    Text: S C S -T H O M S O N M im [iEgTO *S 135 BD137/BD139 NPN SILICON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD 135, BD 137 and BD 139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers


    OCR Scan     		PDF BD135 BD137/BD139 OT-32 BD136 BD138 BD140. BD135 BD137 BD139 BD139 N BD 139 BD139 NPN BD140