t016

Abstract: ME-10 PD7003 PD1302
Contextual Info: »E IbEHTflEi 0[113535 fl | 3 T. 4;. 2J^ y. ¿ //.S S 111 MITSUBISHI {DISCRETE SCI LED s Max.Ratlng* Part Number Material m AIGaAs ME1013 ME1303 AIGaAs ME7021 ME75Z1 InGaAsP ME7022 ME7522 ME7922 . InGaAsP m ' 75 AIGaAs HE1504 ME1514 In u lt e Tc S50«C

ME7022

Abstract: ME7032 ME7522
Contextual Info: M ITSU B ISH I InG aA sP LIG H T EM ITTIN G DIODES M E7X X2 MITSUBISHI D I S C R E T E 3 iE D SC n SERIES 0014223 s b m i t s F O R O P T I C A L C O M M U N IC A T IO N I TY P E NAME DESCRIPTION FEA T U R E S M itsubishi M E7XX2 se ries are InG aA sP/lnP double heterostruoture light emitting d iod es esp e cia lly d esig ned as light

ML4432

Abstract: L8611 PD2101 ML4102A ML4402A ML4102 740nm PD1002 ME1514 L9611
Contextual Info: 6 2 49 82 9 M ITSUBISHI DISCRETE SC _ 97D 13626 T? D É flb E ^ ñ e ^ D D D iahE t. 7^- * 7 - O S ' - 1 Laser Diodes_ ) Mitsubishi laser diodes are high-performance light sources that offer extremely stable single-mode oscillation with a low threshold

Contextual Info: > • b 2 4 ci f l 2 cî O ü l M b ^ | 1 IT S Abb HIGH r a d ia n c e l ig h t e m it t in g d io d e s ME7XX2 SERIES MITSUBISHI (DISCRETE SC FOR OPTICAL COMMUNICATION TYPE NAME DESCRIPTION FEATURES ME7XX2 are In G a A sP /ln P double heterostructure • High c u t - o f f frequency, typically 150MHz

TIL702

Abstract: TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6
Contextual Info: m The Optoelectronics Data Book for Design Engineers T e x a s In s t r u m e n t s IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible. Tl cannot assume any responsibility for any circuits shown or

irf 1340

Abstract: e7032
Contextual Info: HIGH RADIANCE LIGHT EMITTING DIODES ME7XX2 SERIES FOR OPTICAL COMMUNICATION TYPE NAME FEATURES DESCRIPTION ME7XX2 are In G a A s P /ln P double heterostructure • High c u t - o f f frequency, typically 150MHz Ig h t • High coupling power, typically - 17dBm

Contextual Info: M ITSUBISHI InGaAsP LIGHT EM ITTIN G DIODES M E7XX2 MI T S U B I S H I D I S C R E T E SC H 31E D SERIES ^24^02=1 0 G 1 4 2 2 3 S B M I T S F O R O P T I C A L C O M M U N IC A T IO N TYPE NAME DESCRIPTION FEATUR ES Mitsubishi M E7XX2 series are InGaAsP/lnP double heterostructure light emitting diodes e specially designed as light