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    12X17 Search Results

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    12X17 Price and Stock

    Panduit Corp DHC1.12X1.75-D0

    TIE HOSE CLAMP DBL BLK 100LB 11"
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    DigiKey DHC1.12X1.75-D0 Bulk 500 500
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    Avnet Americas DHC1.12X1.75-D0 Bag 500
    • 1 $0.99333
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    Master Electronics DHC1.12X1.75-D0 4
    • 1 $1.276
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    Sager DHC1.12X1.75-D0 500
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    Oupiin 2011-2X17G00SB

    PIN HEADER, DOUBLE ROW, 24 PIN,
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    DigiKey 2011-2X17G00SB Bulk 200 1
    • 1 $0.57
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    Fix Supply ZUSAH1.2X17

    NBR ORING 1.2WD X 17ID MM PK50
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    DigiKey ZUSAH1.2X17 Bulk 60
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    Walsin Technology Corporation MR12X1741FTL

    RES 1.74K OHM 1% 1206
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    DigiKey MR12X1741FTL Reel 5,000
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    Mouser Electronics MR12X1741FTL
    • 1 $0.1
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    • 100 $0.018
    • 1000 $0.008
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    Walsin Technology Corporation WR12X1740FTL

    RES 174 OHM 1% 1/4W 1206
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    DigiKey WR12X1740FTL Reel 5,000
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    Mouser Electronics WR12X1740FTL
    • 1 $0.1
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    • 100 $0.012
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    Find more 12X17 price and stock on Findchips.com

    12X17 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A870

    Abstract: 12x17 gas discharge tube 050127
    Text: GAS DISCHARGE TUBE 12x17 mm No. A870 Specifications 2-electrode GDT Class C Protection Level Packaging A870: 00=Bulk 25 pcs. TT mains Materials Housing: Ceramic Features Gas: non-radioactive Non-radioactive Lead Free Operating temperature -40 °C to +90 °C


    Original     		PDF 12x17 A870 gas discharge tube 050127

    TIB0

    Abstract: K9F6408Q0C K9F6408Q0C-B K9F6408U0C K9F6408U0C-B K9F6408U0C-QCB0
    Text: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA


    Original     		PDF K9F6408Q0C K9F6408U0C K9F6408U0C-Y K9F6408U0C 9mmX11mm 63ball 48ball K9F6408Q0C-D K9F6408Q0C-B K9F6408U0C-D TIB0 K9F6408Q0C K9F6408Q0C-B K9F6408U0C-B K9F6408U0C-QCB0

    SAMSUNG K9F1208U0B

    Abstract: K9F1208* technical K9F1208U0B K9F1208U0B-YCB0 K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208U0B-D
    Text: K9F1208Q0B K9F1208D0B K9F1208U0B Advance FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark Aug. 24th 2003 Advance Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.


    Original     		PDF K9F1208Q0B K9F1208D0B K9F1208U0B SAMSUNG K9F1208U0B K9F1208* technical K9F1208U0B K9F1208U0B-YCB0 K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208U0B-D

    512M x 8 Bit NAND Flash Memory

    Abstract: K9K1208U0A K9K1208U0A-VCB0 K9K1208U0A-VIB0
    Text: K9K1208U0A-VCB0, K9K1208U0A-VIB0 FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Initial issue April. 17 2001 Remark Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.


    Original     		PDF K9K1208U0A-VCB0, K9K1208U0A-VIB0 K9K1208U0A-Vnever 48-PIN 1217F 50TYP 512M x 8 Bit NAND Flash Memory K9K1208U0A K9K1208U0A-VCB0 K9K1208U0A-VIB0

    K9F2808U0B-YCB0

    Abstract: K9F2808Q0B K9F2808Q0B-D K9F2808Q0B-DCB0 K9F2808U0B K9F2808U0B-DCB0 K9F2808U0B-VCB0 K9F2808U0B-Y
    Text: K9F2808Q0B-DCB0,DIB0 K9F2808U0B-VCB0,VIB0 K9F2808Q0B:Preliminary K9F2808U0B-YCB0,YIB0 K9F2808U0B-DCB0,DIB0 FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. May 28’th 2001


    Original     		PDF K9F2808Q0B-DCB0 K9F2808U0B-VCB0 K9F2808Q0B K9F2808U0B-YCB0 K9F2808U0B-DCB0 K9F2808U0B K9F2808Q0B 200us 300us 100ns K9F2808Q0B-D K9F2808U0B-Y

    K9F1208B0B

    Abstract: K9F1208B0B-G K9F1208B0B-Y K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V K9F1208U0B-Y K9F1208U0BYCB0
    Text: K9F1208R0B K9F1208B0B K9F1208U0B FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.


    Original     		PDF K9F1208R0B K9F1208B0B K9F1208U0B K9F1208B0B K9F1208B0B-G K9F1208B0B-Y K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V K9F1208U0B-Y K9F1208U0BYCB0

    Samsung K9F5608U0D PCB0

    Abstract: K9F5608U0D K9F5608U0D-P K9F5608U0D-FCB0 pcb0
    Text: K9F5608R0D K9F5608U0D K9F5608D0D FLASH MEMORY K9F5608X0D INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K9F5608R0D K9F5608U0D K9F5608D0D K9F5608X0D Samsung K9F5608U0D PCB0 K9F5608U0D-P K9F5608U0D-FCB0 pcb0

    samsung 2GB X16 Nand flash

    Abstract: SAMSUNG 4gb NAND Flash Qualification Report K9F1G16Q0M-YCB0 samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue


    Original     		PDF K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0 samsung 2GB X16 Nand flash SAMSUNG 4gb NAND Flash Qualification Report samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability

    K9F1G08U0A-PCB0

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K9F1G08R0A K9F1G08U0A K9K2G08U1A Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)


    Original     		PDF K9F1G08R0A K9F1G08U0A K9K2G08U1A 100ns K9F1G08U0A-PCB0

    Samsung NAND

    Abstract: No abstract text available
    Text: K9F5608Q0B-DCB0,DIB0 K9F5608U0B-YCB0,YIB0 K9F5608U0B-DCB0,DIB0 K9F5616Q0B-DCB0,DIB0 K9F5616U0B-YCB0,YIB0 K9F5616U0B-DCB0,DIB0 K9F5608U0B-VCB0,VIB0 K9F56XXQ0B:Preliminary K9F5616X0B:Preliminary FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory


    Original     		PDF K9F5608Q0B-DCB0 K9F5608U0B-YCB0 K9F5608U0B-DCB0 K9F5616Q0B-DCB0 K9F5616U0B-YCB0 K9F5616U0B-DCB0 K9F5608U0B-VCB0 K9F56XXQ0B K9F5616X0B Samsung NAND

    SAMSUNG 4gb NAND Flash Qualification Report

    Abstract: No abstract text available
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue


    Original     		PDF K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0 SAMSUNG 4gb NAND Flash Qualification Report

    Untitled

    Abstract: No abstract text available
    Text: K9F5608Q0C-DCB0,DIB0 K9F5608U0C-YCB0,YIB0 K9F5608U0C-DCB0,DIB0 K9F5616Q0C-DCB0,DIB0 K9F5616U0C-YCB0,YIB0 K9F5616U0C-DCB0,DIB0 Advance K9F5608U0C-VCB0,VIB0 FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History


    Original     		PDF K9F5608Q0C-DCB0 K9F5608U0C-YCB0 K9F5608U0C-DCB0 K9F5616Q0C-DCB0 K9F5616U0C-YCB0 K9F5616U0C-DCB0 K9F5608U0C-VCB0

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue May. 31. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the


    Original     		PDF K9K2G08U0A K9K2G08U0A-Y K9K2G08U0A-V K9K2G08U0A

    Untitled

    Abstract: No abstract text available
    Text: K9F6408Q0C-BCB0,K9F6408Q0C-BIB0 K9F6408U0C-TCB0,K9F6408U0C-TIB0 K9F6408U0C-BCB0,K9F6408U0C-BIB0 K9F6408U0C-VCB0,K9F6408U0C-VIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue.


    Original     		PDF K9F6408Q0C-BCB0 K9F6408Q0C-BIB0 K9F6408U0C-TCB0 K9F6408U0C-TIB0 K9F6408U0C-BCB0 K9F6408U0C-BIB0 K9F6408U0C-VCB0 K9F6408U0C-VIB0 K9F6408U0C-Y K9F6408U0C

    K9F6408U0C-Q

    Abstract: No abstract text available
    Text: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA


    Original     		PDF K9F6408Q0C K9F6408U0C K9F6408U0C-Y K9F6408U0C 9mmX11mm 63ball 48ball K9F6408Q0C-D K9F6408Q0C-B K9F6408U0C-D K9F6408U0C-Q

    306FSR300XZ2BW

    Abstract: No abstract text available
    Text: FEATURES Reduced case size - High voltage – Low Leakage – low dissipation Factor – JIS 2365 Compliant APPLICATIONS Emergency lights – Signal lights Operating Temperature Range Capacitance Tolerance WVDC Surge voltage SVDC Dissipation Factor tan δ


    Original     		PDF 16x46 187FSR300XPAG 277FSR360XLAK 18x39 187FSR300XQJS 14x27 277FSR360XQDG 14x50 187FSR300XRJW 277FSR360XRCF 306FSR300XZ2BW

    hynix nand spare area

    Abstract: hy27us08561 HY27US HY27US08561M HY27US16561M hynix nand flash controller reset nand flash HYNIX HY27xSxx121mTxB
    Text: HY27SS 08/16 561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Jul. 10. 2003 Preliminary 0.1 Renewal Product Group


    Original     		PDF HY27SS HY27US 256Mbit 32Mx8bit 16Mx16bit) 256Mb hynix nand spare area hy27us08561 HY27US08561M HY27US16561M hynix nand flash controller reset nand flash HYNIX HY27xSxx121mTxB

    K9F1208D0A

    Abstract: K9F1208Q0A K9F1208Q0A-HCB0 K9F1208U0A K9F1208U0A-FCB0 K9F1216D0A K9F1216U0A K9F1216U0A-HCB0 K9F1216U0A-PCB0 Maker
    Text: K9F1208Q0A K9F1208D0A K9F1216D0A K9F1208U0A K9F1216U0A FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. Apr. 25th 2002 0.1 TBGA K9F12XXX0A-DCB0/DIB0 size information is changed.


    Original     		PDF K9F1208Q0A K9F1208D0A K9F1216D0A K9F1208U0A K9F1216U0A K9F12XXX0A-DCB0/DIB0) K9F1208Q0A K9F1208Q0A-HCB0 K9F1208U0A-FCB0 K9F1216D0A K9F1216U0A K9F1216U0A-HCB0 K9F1216U0A-PCB0 Maker

    underground

    Abstract: Arresters em epcos 3000 underground power cable book epcos SURGE ARRESTERS ef55 kabel power AC
    Text: Overview of Type Series Übersicht Typenreihen Overview 2-electrode arresters 2-Elektroden-Ableiter Latest data sheets are available at www.epcos.com/arresters Aktuelle Datenblätter unter www.epcos.de/arresters Type series S30 ES Discharge class 1 kA /A


    Original     		PDF

    K9F1208U0B-YCB0

    Abstract: 8bit nand flash K9F1208U0B-G SAMSUNG K9F1208U0B K9F1208R0B K9F1208R0B-G K9F1208B0B K9F1208B0B-G K9F1208B0B-Y K9F1208U0B
    Text: K9F1208R0B K9F1208B0B K9F1208U0B FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.


    Original     		PDF K9F1208R0B K9F1208B0B K9F1208U0B K9F1208U0B-YCB0 8bit nand flash K9F1208U0B-G SAMSUNG K9F1208U0B K9F1208R0B K9F1208R0B-G K9F1208B0B K9F1208B0B-G K9F1208B0B-Y K9F1208U0B

    Untitled

    Abstract: No abstract text available
    Text: San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel. 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 ELECTRONICS March. 2003 512Mb/256Mb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table


    Original     		PDF 512Mb/256Mb K9F1208Q0A-XXB0, K9F1216Q0A-XXB0 K9F5608Q0C-XXB0, K9F5616Q0C-XXB0 K9K1208Q0C-XXB0, K9K1216Q0C-XXB0

    K9F6408U0C-VCB0

    Abstract: No abstract text available
    Text: K9F6408Q0C-BCB0,K9F6408Q0C-BIB0 K9F6408U0C-TCB0,K9F6408U0C-TIB0 K9F6408U0C-BCB0,K9F6408U0C-BIB0 K9F6408U0C-VCB0,K9F6408U0C-VIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue.


    Original     		PDF K9F6408Q0C-BCB0 K9F6408Q0C-BIB0 K9F6408U0C-TCB0 K9F6408U0C-TIB0 K9F6408U0C-BCB0 K9F6408U0C-BIB0 K9F6408U0C-VCB0 K9F6408U0C-VIB0 K9F6408U0C-Y K9F6408U0C

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    capacitors nacew

    Abstract: No abstract text available
    Text: Surface Mount Aluminum Electrolytic Capacitors nacen Series SURFACE MOUNT FEATURES • CYLINDRICAL LEADLESS TYPE FOR SURFACE MOUNTING • NON-POLARIZED, 1000 HOURS AT 85°C •5.5m m HEIGHT • ANTI-SOLVENT 2 MINUTES • DESIGNED FOR AUTOMATIC MOUNTING AND REFLOW SOLDERING


    OCR Scan     		PDF 120Hz/20 120Hz Z-40-C/Z TP-35; capacitors nacew