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    Untitled

    Abstract: No abstract text available
    Text: RF3160 Preliminary 2 DUAL-BAND GSM/DCS POWER AMP MODULE Typical Applications • 3V Dual-Band GSM/DCS Handsets • GPRS Compatible • Commercial and Consumer Systems • GSM, E-GSM and DCS Products 2 Product Description 2.286 + 0.051 The RF3160 is a high-power, high-efficiency power amplifier module. The device is self-contained with 50Ω input


    Original     		PDF RF3160 RF3160 880MHz 915MHz 1710MHz 1785MHz

    TIB0

    Abstract: K9F6408Q0C K9F6408Q0C-B K9F6408U0C K9F6408U0C-B K9F6408U0C-QCB0
    Text: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA


    Original     		PDF K9F6408Q0C K9F6408U0C K9F6408U0C-Y K9F6408U0C 9mmX11mm 63ball 48ball K9F6408Q0C-D K9F6408Q0C-B K9F6408U0C-D TIB0 K9F6408Q0C K9F6408Q0C-B K9F6408U0C-B K9F6408U0C-QCB0

    IS61LV51216

    Abstract: IS61LV51216-8TL is64lv51216-12ta3 IS64LV51216 D1206
    Text: IS61LV51216 IS64LV51216 ISSI 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: — 8, 10, and 12 ns • CMOS low power operation • Low stand-by power: — Less than 5 mA typ. CMOS stand-by • TTL compatible interface levels


    Original     		PDF IS61LV51216 IS64LV51216 IS61/64LV51216 IS61LV51216 IS61LV51216-8TL is64lv51216-12ta3 IS64LV51216 D1206

    MX30UF4G26AB

    Abstract: MX30UF4G28AB MX30UF2G26AB MX30UF2G28AB SLC NAND
    Text: MX30UF2G26 28 AB MX30UF4G26(28)AB 1.8V, 2G/4G-bit NAND Flash Memory MX30UFxG26(28)AB P/N: PM2031 REV. 1.0, MAY 29, 2014 1 MX30UF2G26(28)AB MX30UF4G26(28)AB Contents 1.


    Original     		PDF MX30UF2G26 MX30UF4G26 MX30UFxG26 PM2031 MX30UF4G26AB MX30UF4G28AB MX30UF2G26AB MX30UF2G28AB SLC NAND

    IS61WV51216

    Abstract: IS61WV51216BLL IS61WV51216BLL-10TLI is64wv51216bll-10ctla3 IS64WV51216BLL-10MLA3 IS61WV51216BLL-10TI IS64WV51216BLL IS61WV51216BLL-10MLI IS61WV51216ALL IS61WV5121
    Text: IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater


    Original     		PDF IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL IS61WV51216ALL) IS61/64WV51216BLL) 48-ball 44-pin MO-207 IS61WV51216 IS61WV51216BLL IS61WV51216BLL-10TLI is64wv51216bll-10ctla3 IS64WV51216BLL-10MLA3 IS61WV51216BLL-10TI IS64WV51216BLL IS61WV51216BLL-10MLI IS61WV51216ALL IS61WV5121

    IS62C10248AL-55TLI

    Abstract: IS62C10248AL-55MLI IS65C10248AL-55MLA3 MO-207 IS62C10248AL
    Text: IS62C10248AL IS65C10248AL 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES PRELIMINARY INFORMATION OCTOBER 2009 DESCRIPTION The ISSI IS62C10248AL/IS65C10248AL are high- • High-speed access time: 45ns, 55ns speed, 8M bit static RAMs organized as 1M words by


    Original     		PDF IS62C10248AL IS65C10248AL IS62C10248AL/IS65C10248AL p48AL-55MLA3 9mmx11mm) IS62C10248AL, MO-207 IS62C10248AL-55TLI IS62C10248AL-55MLI IS65C10248AL-55MLA3 MO-207 IS62C10248AL

    Untitled

    Abstract: No abstract text available
    Text: K9F6408Q0C-BCB0,K9F6408Q0C-BIB0 K9F6408U0C-TCB0,K9F6408U0C-TIB0 K9F6408U0C-BCB0,K9F6408U0C-BIB0 K9F6408U0C-VCB0,K9F6408U0C-VIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue.


    Original     		PDF K9F6408Q0C-BCB0 K9F6408Q0C-BIB0 K9F6408U0C-TCB0 K9F6408U0C-TIB0 K9F6408U0C-BCB0 K9F6408U0C-BIB0 K9F6408U0C-VCB0 K9F6408U0C-VIB0 K9F6408U0C-Y K9F6408U0C

    K9F6408U0C-Q

    Abstract: No abstract text available
    Text: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA


    Original     		PDF K9F6408Q0C K9F6408U0C K9F6408U0C-Y K9F6408U0C 9mmX11mm 63ball 48ball K9F6408Q0C-D K9F6408Q0C-B K9F6408U0C-D K9F6408U0C-Q

    IS62WV102416BLL-25TI

    Abstract: No abstract text available
    Text: IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL ISSI 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater


    Original     		PDF IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL IS62WV102416ALL) IS62/65WV102416BLL) 48-ball 48-pin PK13197T48 IS62WV102416BLL-25TI

    62wv1024

    Abstract: No abstract text available
    Text: IS62WV10248DALL/BLL IS65WV10248DALL/BLL 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES PRELIMINARY INFORMATION MARCH 2009 DESCRIPTION The ISSI IS62WV10248DALL/ IS62WV10248DBLL are • High-speed access time: 45ns, 55ns high-speed, 8M bit static RAMs organized as 1M words


    Original     		PDF IS62WV10248DALL/BLL IS65WV10248DALL/BLL 62/65WV10248DALL) 62/65WV10248DBLL) -40oC 125oC) IS65WV10248DBLL-55CTLA3 IS62WV10248DALL/BLL, IS65WV10248DALL/BLL 62wv1024

    Untitled

    Abstract: No abstract text available
    Text: IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity


    Original     		PDF IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL IS62WV102416ALL) IS62/65WV102416BLL) 48-ball 48-pin 25BSC 75BSC

    IS62C10248AL

    Abstract: No abstract text available
    Text: IS62C10248AL IS65C10248AL 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES PRELIMINARY INFORMATION DECEMBER 2010 DESCRIPTION The ISSI IS62C10248AL/IS65C10248AL are high- • High-speed access time: 45ns, 55ns speed, 8M bit static RAMs organized as 1M words by


    Original     		PDF IS62C10248AL IS65C10248AL IS62C10248AL/IS65C10248AL 9mmx11mm) IS62C10248AL, MO-207 IS62C10248AL

    IS62C51216AL

    Abstract: IS62C512
    Text: IS62C51216AL IS65C51216AL 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DECEMBER 2010 FEATURES DESCRIPTION The ISSI IS62C51216AL and IS65C51216AL are high- • High-speed access time: 45ns, 55ns speed, 8M bit static RAMs organized as 512K words by 16


    Original     		PDF IS62C51216AL IS65C51216AL -40oC 125oC) con55CTLA3 IS65C51216AL-55MLA3 9mmx11mm) IS62C51216AL, IS62C512

    Untitled

    Abstract: No abstract text available
    Text: MX30LF1G08AA MX30LF1G08AA 1G-bit NAND Flash Memory REV. 1.3, DEC. 18, 2013 P/N: PM1113 1 MX30LF1G08AA Contents 1.


    Original     		PDF MX30LF1G08AA PM1113 MX30LF1G08AA

    IS62C51216AL

    Abstract: No abstract text available
    Text: IS62C51216AL IS65C51216AL 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES APRIL 2009 DESCRIPTION The ISSI IS62C51216AL and IS65C51216AL are high- • High-speed access time: 45ns, 55ns speed, 8M bit static RAMs organized as 512K words by 16


    Original     		PDF IS62C51216AL IS65C51216AL IS62C51216AL IS65C51216AL the6AL-55MLA3 9mmx11mm) IS62C51216AL, MO-207

    IS64WV51216BLL-10MLA3

    Abstract: IS61WV51216 IS61WV51216BLL IS64WV51216BLL
    Text: IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater


    Original     		PDF IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL IS61WV51216ALL) IS61/64WV51216BLL) 48-ball 44-pin IS64WV51216BLL-10MLA3 IS61WV51216 IS61WV51216BLL IS64WV51216BLL

    IS62WV10248DBLL-55TLI

    Abstract: is62wv10248dbll IS62WV10248DBLL-55MLI IS62WV10248DBLL-55TI 62wv1024
    Text: IS62WV10248DALL/BLL IS65WV10248DALL/BLL 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES MAY 2009 DESCRIPTION The ISSI IS62WV10248DALL/ IS62WV10248DBLL are • High-speed access time: 45ns, 55ns high-speed, 8M bit static RAMs organized as 1M words


    Original     		PDF IS62WV10248DALL/BLL IS65WV10248DALL/BLL IS62WV10248DALL/ IS62WV10248DBLL diss48DBLL-55CTLA3 IS62WV10248DALL/BLL, MO-207 IS62WV10248DBLL-55TLI IS62WV10248DBLL-55MLI IS62WV10248DBLL-55TI 62wv1024

    Untitled

    Abstract: No abstract text available
    Text: IS62C51216AL IS65C51216AL 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES PRELIMINARY INFORMATION FEBRUARY 2009 DESCRIPTION The ISSI IS62C51216AL and IS65C51216AL are high- • High-speed access time: 45ns, 55ns speed, 8M bit static RAMs organized as 512K words by 16


    Original     		PDF IS62C51216AL IS65C51216AL -40oC 125oC) high-performan55CTLA3 IS65C51216AL-55MLA3 9mmx11mm) IS62C51216AL,

    IS61LV51216-8TL

    Abstract: 48-pin TSOP standard dimensions
    Text: ISSI IS61LV51216 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: — 8, 10, and 12 ns • CMOS low power operation • Low stand-by power: — Less than 5 mA typ. CMOS stand-by • TTL compatible interface levels


    Original     		PDF IS61LV51216 IS61LV51216 25BSC 75BSC 207BSC 148BSC IS61LV51216-8TL 48-pin TSOP standard dimensions

    Untitled

    Abstract: No abstract text available
    Text: IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater


    Original     		PDF IS61WV51216ALL IS61WV51216BLL IS64WV51216BLL IS61WV51216ALL) IS61/64WV102416BLL) 48-ball 44-pin

    K9F6408U0C-VCB0

    Abstract: No abstract text available
    Text: K9F6408Q0C-BCB0,K9F6408Q0C-BIB0 K9F6408U0C-TCB0,K9F6408U0C-TIB0 K9F6408U0C-BCB0,K9F6408U0C-BIB0 K9F6408U0C-VCB0,K9F6408U0C-VIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue.


    Original     		PDF K9F6408Q0C-BCB0 K9F6408Q0C-BIB0 K9F6408U0C-TCB0 K9F6408U0C-TIB0 K9F6408U0C-BCB0 K9F6408U0C-BIB0 K9F6408U0C-VCB0 K9F6408U0C-VIB0 K9F6408U0C-Y K9F6408U0C

    Untitled

    Abstract: No abstract text available
    Text: Advanced Information MX30UF1G26 28 AB 1.8V, 1G-bit NAND Flash Memory MX30UF1G26(28)AB P/N: PM2073 REV. 0.00, MAY 09, 2014 1 Advanced Information MX30UF1G26(28)AB Contents 1.


    Original     		PDF MX30UF1G26 PM2073

    Untitled

    Abstract: No abstract text available
    Text: MX30LF2G28AB MX30LF4G28AB 3V, 2G/4G-bit NAND Flash Memory MX30LFxG28AB P/N: PM2029 REV. 0.02, APR. 02, 2014 1 MX30LF2G28AB MX30LF4G28AB Contents 1.


    Original     		PDF MX30LF2G28AB MX30LF4G28AB MX30LFxG28AB PM2029

    62wv1024

    Abstract: No abstract text available
    Text: IS62WV10248DALL/BLL IS65WV10248DALL/BLL 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM MAY 2009 DESCRIPTION The฀ ISSI฀ IS62WV10248DALL/฀ IS62WV10248DBLL฀ are฀฀ FEATURES •฀ High-speed฀access฀time:฀45ns,฀55ns ฀


    Original     		PDF IS62WV10248DALL/BLL IS65WV10248DALL/BLL IS62WV10248DALL/à IS62WV10248DBLLà IS62WV10248DALL/BLL, MO-207 62wv1024