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    tsop i 12mmx20mm

    Abstract: Utron SRAM Utron SRAM 512K X
    Text:  UTRON Rev. 1.1 UT65L168 E /UT65L168(I) 512K X 16 BITS LOW POWER PSEUDO SRAM REVISION HISTORY REVISION Rev. 1.0 Rev. 1.1 DESCRIPTION Original. 1. Delete Partial refresh function 2. Add Package : 48-pin 12mmX20mm TSOP-I UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.


    Original     		PDF UT65L168 /UT65L168 48-pin 12mmX20mm P80094 608-bit UT65L168BS-60LLI tsop i 12mmx20mm Utron SRAM Utron SRAM 512K X

    7040K

    Abstract: No abstract text available
    Text: UTRON UT65L1616 E /UT65L1616(I) 1M X 16 BITS LOW POWER PSEUDO SRAM Rev. 1.2 REVISION HISTORY REVISION DESCRIPTION Draft Date Rev. 1.0 Original. Apr 15, 2003 Rev. 1.1 Delete Partial refresh function Aug 06,2003 Rev. 1.2 Add Package : 48-pin 12mmX20mm TSOP-I


    Original     		PDF UT65L1616 /UT65L1616 48-pin 12mmX20mm P80080 216-bit UT65L1616BS-60LLI 7040K

    Untitled

    Abstract: No abstract text available
    Text: LY61L102416A 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.5 REVISION HISTORY Revision Description Issue Date Rev. 1.0 Rev. 1.1 Rev. 1.2 Initial Issued Add 48 pin BGA package type. 1.“CE# ≧VCC - 0.2V” revised as ”CE# ≦0.2” for TEST CONDITION of Average Operating Power supply Current


    Original     		PDF LY61L102416A 1024K Page11 w416ALL-10IT LY61L102416ALL-10I LY61L102416ALL-10T LY61L102416ALL-10 LY61L102416AGL-12IT

    xxxxxxxxx

    Abstract: No abstract text available
    Text: LY62L102616A Rev. 1.1 16M Bits 2Mx8 / 1Mx16 Switchable LOW POWER CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Description Initial Issue Correct typo error on the column “UB#”, “LB#” of truth table for row “Byte Read” “Byte Write” and “Output Disable” at


    Original     		PDF LY62L102616A 1Mx16 LY62L102616ALL-55SLT LY62L102616ALL-55SL LY62L102616ALL-70SLIT xxxxxxxxx

    Untitled

    Abstract: No abstract text available
    Text: LY62L102516 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 0.4 Rev. 1.0 Description Initial Issue Added SL Spec. Added ISB1/IDR values when TA = 25℃ and TA = 40℃ Revised FEATURES & ORDERING INFORMATION


    Original     		PDF LY62L102516 1024K LY62L102516GL-55SLT LY62L102516GL-55SL LY62L102516GL-70LLIT

    tsop i 12mmx20mm

    Abstract: MX23J12840 MX23J12840TC-50 MX23J12840TC-50G MX23J12840TI-50G xtrarom
    Text: MX23J12840 128M-BIT NAND INTERFACE XtraROMTM FEATURES • Word organization - 16,777,216 + 1,048,576Note by 8 bits • Page size - (512 + 16Note) by 8 bits • Block size - (16,384 + 512Note) by 8 bits Note : Underlined parts are redundancy and fixed to


    Original     		PDF MX23J12840 128M-BIT 576Note) 16Note) 512Note) 48-pin 12mmx20mm) MacronixCT/28/2005 tsop i 12mmx20mm MX23J12840 MX23J12840TC-50 MX23J12840TC-50G MX23J12840TI-50G xtrarom

    TSOP1-48

    Abstract: BS616LV1622
    Text: BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable „ FEATURES BS616LV1622 • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE1, CE2 and OE options • I/O Configuration x8/x16 selectable by CIO, LB and UB pin


    Original     		PDF BS616LV1622 x8/x16 113mA 115mA BS616LV1622 -40oC TSOP1-48 12mmx20mm) TSOP1-48

    MX23L256

    Abstract: No abstract text available
    Text: PRELIMINARY MX23L25640 256M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L25640 is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x


    Original     		PDF MX23L25640 256M-BIT MX23L25640 48-pin 44-pin 576Note 16Note) 512Note) MX23L256

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX23L12840 128M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L12840 is a 128 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x


    Original     		PDF MX23L12840 128M-BIT MX23L12840 48-pin 44-pin 576Note 16Note) 512Note)

    MX23L12840

    Abstract: No abstract text available
    Text: PRELIMINARY MX23L12840 128M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L12840 is a 128 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x


    Original     		PDF MX23L12840 128M-BIT MX23L12840 48-pin 44-pin 576Note 16Note) 512Note)

    GPR27P512A

    Abstract: No abstract text available
    Text: GPR27P512A 512M-BIT NAND INTERFACE OTP Aug. 05, 2009 Version 1.3 GENERALPLUS TECHNOLOGY INC. reserves the right to change this documentation without prior notice. TECHNOLOGY INC. is believed to be accurate and reliable. Information provided by GENERALPLUS


    Original     		PDF GPR27P512A 512M-BIT GPR27P512A

    TC55VBM316ATGN55

    Abstract: TMPR3903AF TMPR3916F TC55VBM316ASGN55 32X8 sram TC90A70F ARM926EJ-S TCM5063T ARM926EJ TC59LM806CFT
    Text: e y eeeyyyeee eeye 東芝半導体情報誌アイ 2002年2月号 英ARM社のARM926EJ-Sマイクロプロセッサ・コアのライセンスを取得 当社は英ARM社から ARM926EJ-STMコアのライセンスを取得しました。これにより当社は、


    Original     		PDF ARMARM926EJ-S ARM926EJ-STM ARM926EJ-S ARM946E-S 7-3405FAX. TC55VBM316ATGN55 TMPR3903AF TMPR3916F TC55VBM316ASGN55 32X8 sram TC90A70F ARM926EJ-S TCM5063T ARM926EJ TC59LM806CFT

    SST39WF160x

    Abstract: AM29F SST25VF016B tsop i 12mmx20mm 48-WFBGA SST38VF640x TSOP 28 SPI memory Package flash FLASH CROSS sst39vf040 WFBGA-48 48TSOP
    Text: Silicon Storage Technology, Inc. NOR Flash Cross Reference Guide 1.8V, 3V, 5V www.SST.com Comparison Guide Spansion Company Density Spansion SST SST AM29F SST39SF S29AL S29GL SST39VF SST38VF S29AS SST39WF 1 ~ 32 Mb 2 ~ 16 Mb 1 ~ 4 Mb 4 ~ 32 Mb 16 Mb ~ 1Gb


    Original     		PDF AM29F SST39SF S29AL S29GL SST39VF SST38VF S29AS SST39WF SST39WF160x AM29F SST25VF016B tsop i 12mmx20mm 48-WFBGA SST38VF640x TSOP 28 SPI memory Package flash FLASH CROSS sst39vf040 WFBGA-48 48TSOP

    Untitled

    Abstract: No abstract text available
    Text: BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable „ FEATURES BS616LV1622 • Fully static operation • Data retention supply voltage as low as 1.5V • Easy expansion with CE1, CE2 and OE options • I/O Configuration x8/x16 selectable by CIO, LB and UB pin


    Original     		PDF BS616LV1622 113mA 115mA operationS616LV1622 -40oC BS616LV1622 TSOP1-48 12mmx20mm) TSOP1-48

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX23L25640 256M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L25640 is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x


    Original     		PDF MX23L25640 256M-BIT MX23L25640 48-pin 44-pin 576Note 16Note) 512Note)

    L24002

    Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
    Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities


    Original     		PDF L-11002-01 64MDRAM 64MSDRAM 128MSDRAM 256MSDRAM 144MRDRAM L24002 NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP

    xxxxxxxxx

    Abstract: No abstract text available
    Text: LY62L102616 1024K X 16 BIT LOW POWER CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Rev. 0.3 Rev. 1.0 Description Initial Issue Revised FEATURES & ORDERING INFORMATION Lead free and green package available to Green package available Added packing type in ORDERING INFORMATION


    Original     		PDF LY62L102616 1024K 102616LL-70LLI LY62L102616LL-55LLT LY62L102616LL-55LL LY62L102616LL-70LLIT xxxxxxxxx

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX23L25640 256M-BIT NAND INTERFACE MASK ROM DESCRIPTION The MX23L25640 is a 256 Mbit NAND interface programmable mask read-only memory that operates with a single power supply. The memory organization consists of 512 + 16 (Redundancy bytes x 32 pages x


    Original     		PDF MX23L25640 256M-BIT MX23L25640 48-pin 44-pin 576Note 16Note) 512Note)

    Untitled

    Abstract: No abstract text available
    Text: MX23J12840 128M-BIT NAND INTERFACE XtraROMTM FEATURES • Word organization - 16,777,216 + 1,048,576Note by 8 bits • Page size - (512 + 16Note) by 8 bits • Block size - (16,384 + 512Note) by 8 bits Note : Underlined parts are redundancy and fixed to


    Original     		PDF MX23J12840 128M-BIT 576Note) 16Note) 512Note) 48-pin 12mmx20mm)

    SST32HF162

    Abstract: SST32HF164 SST32HF202 SST32HF402 SST32HF802 LFBGA48 LFBGA-48 128Kx16
    Text: Product Brief January 2002 ComboMemory TM Multi-Purpose Flash + SRAM SST32HF Series SST ComboMemory Advantages: Features ∆ Flash ∆ Integrated Flash and SRAM for Small Form Factor Design –Superior Reliability –Small Sector –Fast Erase –Low Power Consumption


    Original     		PDF SST32HF SST32HF202: SST32HF402: SST32HF802: 15-DQ8 SST32HF162 SST32HF164 SST32HF202 SST32HF402 SST32HF802 LFBGA48 LFBGA-48 128Kx16

    Untitled

    Abstract: No abstract text available
    Text: AS7C316096A 2048K X 8 BIT HIGH SPEED CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Description Initial Issued Issue Date Oct. 26. 2012 Alliance Memory, Inc. reserves the rights to change the specifications and products without notice. 551 Taylor Way, San Carlos, CA 94070


    Original     		PDF AS7C316096A 2048K 48-pin 12mmx20mm) AS7C316096A -10TIN -10TINTR

    SST25VF128

    Abstract: SST25VF128C soic-8 200mil TSOP32 FOOTPRINT footprint WSON-8 SST12LP15A TSOP32 8 X 14 FOOTPRINT BIOS 32 Pin SST39SF040 SST25VF080B BIOS electronic clock on breadboard
    Text: Headquartered in Sunnyvale, California, SST designs, manufactures and markets a diversified range of memory and non-memory products for high volume applications in the digital consumer, networking, wireless communications and Internet computing markets. Leveraging its proprietary, patented SuperFlash


    Original     		PDF

    BS616LV1625

    Abstract: BS616LV1625TC BS616LV1625TI TSOP1-48
    Text: Preliminary BSI Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable BS616LV1625 „ FEATURES „ DESCRIPTION • Vcc operation voltage : 4.5 ~ 5.5V • Very low power consumption : Vcc = 5.0V C-grade: 113mA @55ns operating current I -grade: 115mA (@55ns) operating current


    Original     		PDF BS616LV1625 113mA 115mA x8/x16 BS61e R0201-BS616LV1625 -40oC TSOP1-48 BS616LV1625 BS616LV1625TC BS616LV1625TI

    tsop i 12mmx20mm

    Abstract: xtrarom MX23J25640TI-50G load cell amplifier MX23J25640 MX23J25640TC-50 MX23J25640TC-50G
    Text: MX23J25640 256M-BIT NAND INTERFACE XtraROMTM FEATURES • Word organization - 33,554,432 + 2,097,152Note by 8 bits • Page size - (512 + 16Note) by 8 bits • Block size - (16,384 + 512Note) by 8 bits Note : Underlined parts are redundancy and fixed to


    Original     		PDF MX23J25640 256M-BIT 152Note) 16Note) 512Note) 48-pin 12mmx20mm) MacronixCT/28/2005 tsop i 12mmx20mm xtrarom MX23J25640TI-50G load cell amplifier MX23J25640 MX23J25640TC-50 MX23J25640TC-50G