Si6926ADQ
Abstract: No abstract text available
Text: Si6926ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 • Halogen-free RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 RoHS 0.033 at VGS = 3.0 V 4.2 COMPLIANT 0.035 at VGS = 2.5 V 3.9 0.043 at VGS = 1.8 V 3.6 D1 D2 TSSOP-8
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Si6926ADQ
Si6926ADQ-T1-GE3
11-Mar-11
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Si6928DQ
Abstract: Si6928DQ-T1
Text: Si6928DQ Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V ± 4.0 0.050 at VGS = 4.5 V ± 3.4 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT D1 D2 TSSOP-8 8 D2
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Si6928DQ
Si6928DQ-T1
Si6928DQ-T1-GE3
11-Mar-11
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Si6926ADQ
Abstract: No abstract text available
Text: Si6926ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 • Halogen-free RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 RoHS 0.033 at VGS = 3.0 V 4.2 COMPLIANT 0.035 at VGS = 2.5 V 3.9 0.043 at VGS = 1.8 V 3.6 D1 D2 TSSOP-8
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Si6926ADQ
Si6926ADQ-T1-GE3
08-Apr-05
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SI4688DY
Abstract: No abstract text available
Text: New Product Si4688DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 12 0.0145 at VGS = 4.5 V 9.8 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT
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Si4688DY
Si4688DY-T1-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V ± 3.9 0.095 at VGS = 4.5 V ± 3.1 0.085 at VGS = - 10 V ± 2.5 0.19 at VGS = - 4.5 V ± 1.8
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Si6543DQ
Si6543DQ-T1
Si6543DQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si6475DQ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.011 at VGS = - 4.5 V - 10 - 12 0.0135 at VGS = - 2.5 V -9 0.017 at VGS = - 1.8 V -8 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S*
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Si6475DQ
Si6475DQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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tanaka TS3332LD
Abstract: XP1032-BD-EV1 tanaka TS3332LD epoxy DM6030HK XP1032-BD
Text: 32.0-36.0 GHz GaAs MMIC Power Amplifier P1032-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 2W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +32.5 dBm P1dB Compression Point +33.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing
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12-May-08
P1032-BD
MIL-STD-883
parD-000V
XP1032-BD-EV1
XP1032-BD
tanaka TS3332LD
XP1032-BD-EV1
tanaka TS3332LD epoxy
DM6030HK
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CVCO55BE-1690-1810
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 1690 MHz 4.5 VDC 1810 MHz Tuning Voltage: 0.5 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +3.0 +5.0 +7.0 dBm 25 35 mA Harmonic Suppression 2 Harmonic :
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100kHz
CVCO55BE-1690-1810
12-May-08
CVCO55BE-1690-1810
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CVCO55CC-2850-3210
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2850 MHz 14.0 VDC 3210 MHz Tuning Voltage: 0.5 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +2.0 +5.0 +8.0 dBm 25 35 mA Harmonic Suppression 2 Harmonic :
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100kHz
CVCO55CC
CVCO55CC-2850-3210
12-May-08
CVCO55CC-2850-3210
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Untitled
Abstract: No abstract text available
Text: Si6926ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 • Halogen-free RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 RoHS 0.033 at VGS = 3.0 V 4.2 COMPLIANT 0.035 at VGS = 2.5 V 3.9 0.043 at VGS = 1.8 V 3.6 D1 D2 TSSOP-8
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Si6926ADQ
Si6926ADQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 1693 MHz 15.0 VDC 2023 MHz Tuning Voltage: 0.5 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: -6.0 -4.0 -2.0 dBm 15 25 mA Harmonic Suppression 2 Harmonic :
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100kHz
CVCO55BE-1693-2023
12-May-08
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Untitled
Abstract: No abstract text available
Text: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V ± 3.9 0.095 at VGS = 4.5 V ± 3.1 0.085 at VGS = - 10 V ± 2.5 0.19 at VGS = - 4.5 V ± 1.8
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Si6543DQ
Si6543DQ-T1
Si6543DQ-T1-GE3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si6926AEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S Input Protected Load Switch FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 20 0.033 at VGS = 3.0 V 4.2 0.035 at VGS = 2.5 V 3.9 Qg (Typ.) 7.6 • • • • Halogen-free
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Si6926AEDQ
18-Jul-08
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Si6928DQ
Abstract: Si6928DQ-T1
Text: Si6928DQ Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V ± 4.0 0.050 at VGS = 4.5 V ± 3.4 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT D1 D2 TSSOP-8 8 D2
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Si6928DQ
Si6928DQ-T1
Si6928DQ-T1-GE3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si6926ADQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 • Halogen-free RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 RoHS 0.033 at VGS = 3.0 V 4.2 COMPLIANT 0.035 at VGS = 2.5 V 3.9 0.043 at VGS = 1.8 V 3.6 D1 D2 TSSOP-8
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Si6926ADQ
Si6926ADQ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SUP90N08-7m7P Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0077 at VGS = 10 V 90d 69 • TrenchFET Power MOSFETS • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Synchronous Rectification
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SUP90N08-7m7P
O-220AB
SUP90N08-7m7P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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CVCO55CL-1145-1210
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 1145 MHz 4.5 VDC 1210 MHz Tuning Voltage: 0.5 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +2.0 +4.0 +6.0 dBm 25 35 mA Harmonic Suppression 2 Harmonic :
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CVCO55CL-1145-1210
12-May-08
CVCO55CL-1145-1210
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SI6933DQ
Abstract: No abstract text available
Text: Si6933DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.045 at VGS = - 10 V ± 3.5 0.085 at VGS = - 4.5 V ± 2.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S1 TSSOP-8 G1 8 D2
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Si6933DQ
Si6933DQ-T1-GE3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si6926AEDQ Vishay Siliconix Dual N-Channel 2.5-V G-S Input Protected Load Switch FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.030 at VGS = 4.5 V 4.5 20 0.033 at VGS = 3.0 V 4.2 0.035 at VGS = 2.5 V 3.9 Qg (Typ.) 7.6 • • • • Halogen-free
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Si6926AEDQ
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si6913DQ Vishay Siliconix Dual P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.021 at VGS = - 4.5 V - 5.8 - 12 0.028 at VGS = - 2.5 V - 5.0 0.037 at VGS = - 1.8 V - 4.4 • Halogen-free • TrenchFET Power MOSFETs RoHS
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Si6913DQ
Si6913DQ-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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XP1054-BD
Abstract: XP1054-BD-000V XP1054-BD-EV1 DM6030HK tanaka TS3332LD
Text: 33.0-36.0 GHz GaAs MMIC Power Amplifier P1054-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 3W Power Amplifier Dual Sided Bias Architecture 20 dB Small Signal Gain +33.5 dBm P1dB Compression Point +34.5 dBm Saturated Output Power 100% On-Wafer DC, RF and Output Power Testing
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12-May-08
P1054-BD
MIL-STD-883
parD-000V
XP1054-BD-EV1
XP1054-BD
XP1054-BD-000V
XP1054-BD-EV1
DM6030HK
tanaka TS3332LD
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tanaka gold wire
Abstract: tanaka wire XP1057-BD DM6030HK tanaka TS3332LD tanaka TS3332LD epoxy
Text: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD May 2008 - Rev 12-May-08 Features Chip Device Functional Diagram 10W Power Amplifier Dual Sided Bias Architecture 18 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power
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12-May-08
P1057-BD
MIL-STD-883
surfaD-000V
XP1057-BD-EV1
XP1057-BD
tanaka gold wire
tanaka wire
DM6030HK
tanaka TS3332LD
tanaka TS3332LD epoxy
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. AUG ,2006. LOC ALL RIGHTS RESERVED. R E V IS IO N S DW p LTR DESCRIPTION C1 DATE DWN SC WK 12MAY08 REVISED ECR— 0 8 — 0 1 1 9 5 3 APVD K D D M2 NUT 0.10
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12MAY08
600PCS)
32Kg/CARTON
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. C RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 REVISIONS D IS T LOC ,1 9 ALL RIGHTS RESERVED. ES 00 LTR DESCRIPTION D1 REVISED E C R -0 8 - 0 1 1907 0.9 2 03.1 ±0.08 DWN DATE 12MAY08 APVD A.Z S.Y DIA (M) A B ©
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12MAY08
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