MOSFET SOT-23 marking code M2
Abstract: No abstract text available
Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si2312BDS
2002/95/EC
O-236
OT-23)
Si2312BDS-T1-E3
Si2312BDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
MOSFET SOT-23 marking code M2
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SMD 0402
Abstract: No abstract text available
Text: 2381 553 2.6/MLV0402E3.3T Vishay BCcomponents SMD 0402 Multilayer Varistor FEATURES • Surface mount multilayer surge suppressor Inherent bidirectional clamping Excellent energy/volume ratio Suitable for reflow soldering Compliant to RoHS directive 2002/95/EC
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6/MLV0402E3.
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
SMD 0402
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RC32 VISHAY
Abstract: crc50
Text: RCMM Vishay Sfernice Molded Metal Film Resistors FEATURES • 0.25 W to 1 W at 70 °C • NF C 83-230 RC21U-31U-41U-32 • CECC 40 100 • High insulation > 107 MΩ • Great mechanical strength • Termination = Pure matte tin • Compliant to RoHS directive 2002/95/EC
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RC21U-31U-41U-32)
2002/95/EC
RCMM02
RCMM05
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
RC32 VISHAY
crc50
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Untitled
Abstract: No abstract text available
Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive
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ICTE18C,
1N6373
1N6386
22-B106
AEC-Q101
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
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ILD252-X009T
Abstract: IL252X001 IL252-X001
Text: IL250, IL251, IL252, ILD250, ILD251, ILD252 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, with Base Connection FEATURES A/C 1 6 B C/A 2 5 C • Built-in reverse polarity input protection NC 3 4 E • Improved CTR symmetry
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IL250,
IL251,
IL252,
ILD250,
ILD251,
ILD252
2002/95/EC
2002/96/EC
i179037-1
UL1577,
ILD252-X009T
IL252X001
IL252-X001
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Untitled
Abstract: No abstract text available
Text: T93 Vishay Sfernice 3/8" Square Multi-Turn Cermet Trimmer FEATURES • Industrial grade • 0.5 W at 70 °C • Tests according to CECC 41000 or IEC 60393-1 The T93 is a small size trimmer - 3/8" x 3/8" x 3/16" answering PC board mounting requirements. Five versions are available which differ by the position of the
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2002/95/EC
T93XA
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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40MT160
Abstract: 40MT140 100mt160
Text: 40MT1.0P.PbF, 70MT1.0P.PbF, 100MT1.0P.PbF Series Vishay High Power Products Three Phase Bridge Power Module , 45 A to 100 A FEATURES • Low VF • Low profile package • Direct mounting to heatsink • Flat pin/round pin versions with PCB solderable terminals
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40MT1
70MT1
100MT1
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
40MT160
40MT140
100mt160
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SUP90P06-09L
Abstract: No abstract text available
Text: SUP90P06-09L Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)c 0.0093 at VGS = - 10 V - 90 0.0118 at VGS = - 4.5 V - 90 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC RoHS
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SUP90P06-09L
2002/95/EC
O-220AB
SUP90P06-09L-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SUP90P06-09L
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B8JT
Abstract: No abstract text available
Text: FES F,B 8AT thru FES(F,B)8JT Vishay General Semiconductor Ultrafast Plastic Rectifier TO-220AC FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability
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O-220AC
ITO-220AC
O-263AB
J-STD-020,
ITO-220AC
2002/95/EC
2002/96/EC
2011/65/EU
B8JT
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5900AS
Abstract: 1600AS TP3B476 6500AS 6300AS 2500AS 6700as TP3E107 3800as
Text: TP3 www.vishay.com Vishay Sprague Solid Tantalum Surface Mount Chip Capacitors TANTAMOUNT Molded Case, High Performance, Automotive Grade FEATURES • AEC-Q200 qualified • Low ESR • 100 % surge current tested B, C, D, and E case sizes • High ripple current carrying capability
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AEC-Q200
QC300801/US0001
EIA535BAAC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
5900AS
1600AS
TP3B476
6500AS
6300AS
2500AS
6700as
TP3E107
3800as
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Vishay DaTE CODE tsop-6
Abstract: si3410
Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Si3410DV
2002/95/EC
Si3410DV-T1-E3
Si3410DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Vishay DaTE CODE tsop-6
si3410
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vs-10bq100
Abstract: DIODE V1J marking code V1j marking code V1J diode 95034 vs10bq100
Text: VS-10BQ100PbF Vishay High Power Products Schottky Rectifier, 1 A FEATURES • Small foot print, surface mountable • Low forward voltage drop • High frequency operation Cathode • Guard ring for enhanced ruggedness and long term reliability Anode • Meets MSL level 1, per J-STD-020, LF maximum peak of
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VS-10BQ100PbF
J-STD-020,
2002/95/EC
VS-10BQ100PbF
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
vs-10bq100
DIODE V1J marking code
V1j marking code
V1J diode
95034
vs10bq100
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Untitled
Abstract: No abstract text available
Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si7613DN
2002/95/EC
Si7613DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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BZT52C5V1-V
Abstract: BZT52C43V
Text: BZT52-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon planar power zener diodes • These diodes are also available in other case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener
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BZT52-V-Series
OT-23
BZX84
AEC-Q101
2002/95/EC
2002/96/EC
OD-123
GS18/10
BZT52C5V1-V
BZT52C43V
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IRFZ48 mosfet driver
Abstract: No abstract text available
Text: IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Dynamic dV/dt • 175 °C Operating Temperature • Fast Switching
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IRFZ48RS,
IRFZ48RL,
SiHFZ48RS
SiHFZ48RL
IRFZ48,
SiHFZ48
2002/95/EC
O-262)
O-263)
2011/65/EU
IRFZ48 mosfet driver
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s8058
Abstract: No abstract text available
Text: Si7120DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.019 at VGS = 10 V 10 0.028 at VGS = 4.5 V 8.2 • • • • • Halogen-free Option Available TrenchFET Power MOSFET RoHS COMPLIANT New Low Thermal Resistance
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Si7120DN
Si7120DN-T1-E3
Si7120DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
s8058
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5302D
Abstract: No abstract text available
Text: DG428, DG429 Vishay Siliconix Single 8-Ch/Differential 4-Ch Latchable Analog Multiplexers DESCRIPTION FEATURES The DG428, DG429 analog multiplexers have on-chip address and control latches to simplify design in microprocessor based applications. Break-before-make
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DG428,
DG429
DG429
DG428
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
5302D
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Untitled
Abstract: No abstract text available
Text: Model 132 Vishay Spectrol 1 5/16" 33.3 mm Low Cost Industrial Single Turn Wirewound, Bushing Mount Type FEATURES • Suitable model for all industrial applications • Center tap available • Continuous rotation and mechanical stops both standard • Large electrical angle: 352° ± 2°
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MIL-PRF-12934
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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BY252P
Abstract: No abstract text available
Text: BY251P thru BY255P Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 A • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in
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BY251P
BY255P
22-B106
2002/95/EC
2002/96/EC
DO-201AD
AEC-Q101
DO-201AD,
2011/65/EU
2002/95/EC.
BY252P
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134D686
Abstract: 134d506
Text: 134D www.vishay.com Vishay Sprague Wet Tantalum HI-TMP Capacitors Tantalum-Case with Glass-to-Tantalum Hermetic Seal for - 55 °C to + 200 °C Operation FEATURES • High capacitance • All tantalum, hermetically sealed, tantalum case • + 200 °C high temperature
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2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
134D686
134d506
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9940
Abstract: mal215099xxxe3 MAL215099 99101E3 99804E3 150631-2 99103E3 99515E3 99603E3 MAL215
Text: 150 CRZ www.vishay.com Vishay BCcomponents Aluminum Capacitors SMD Chip , Very Low Z FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte, self healing • SMD-version with base plate, lead (Pb)-free reflow solderable • Very low impedance, very high ripple current
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J-STD-020
AEC-Q200
MAL215099.
9991trademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
9940
mal215099xxxe3
MAL215099
99101E3
99804E3
150631-2
99103E3
99515E3
99603E3
MAL215
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IL213AT
Abstract: No abstract text available
Text: IL211AT, IL212AT, IL213AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 A 1 8 NC K 2 7 B NC 3 6 C NC 4 5 E FEATURES • Isolation test voltage, 4000 VRMS • Industry standard SOIC-8 surface mountable package • Compatible with dual wave, vapor phase and IR
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IL211AT,
IL212AT,
IL213AT
i179002-1
2002/95/EC
2002/96/EC
i179025
IL213AT
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SOT 23 marking code a6 diode
Abstract: No abstract text available
Text: BAS16-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Ultra fast switching speed • Surface mount package ideally suited for automatic insertion • High conductance • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in
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BAS16-V
AEC-Q101
2002/95/EC
2002/96/EC
OT-23
BAS16-V
BAS16-V-GS18
2011/65/EU
2002/95/EC.
SOT 23 marking code a6 diode
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Untitled
Abstract: No abstract text available
Text: P300A thru P300M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 A • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in
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P300A
P300M
22-B106
2002/95/EC
2002/96/EC
DO-201AD
AEC-Q101
DO-201AD,
2011/65/EU
2002/95/EC.
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