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    12A 650V MOSFET Search Results

    12A 650V MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    12A 650V MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STF11NM65

    Abstract: p11nm6
    Text: STB11NM65N-1 - STF11NM65N STP11NM65N - STW11NM65N N-channel 650V - 0.33Ω - 12A - TO-220/FP- I2PAK - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STB11NM65N-1 710V < 0.38Ω 12A STF11NM65N 710V < 0.38Ω 12A(1) STP11NM65N


    Original     		PDF STB11NM65N-1 STF11NM65N STP11NM65N STW11NM65N O-220/FP- O-247 STW11NM65N STF11NM65 p11nm6

    F12N65

    Abstract: P12N65 PJP12N65
    Text: PJP12N65 / PJF12N65 TO-220AB / ITO-220AB 650V N-Channel Enhancement Mode MOSFET FEATURES • 12A , 650V, RDS ON =0.8Ω@VGS=10V, ID=6.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current


    Original     		PDF PJP12N65 PJF12N65 O-220AB ITO-220AB O-220AB 2002/95/EC ITO-220AB MIL-STD-750 F12N65 P12N65

    12N65F

    Abstract: No abstract text available
    Text: HY12N65T / HY12N65FT 650V / 12A 650V, RDS ON =0.8Ω@VGS=10V, ID=6.0A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS


    Original     		PDF HY12N65T HY12N65FT 2002/95/EC ITO-220AB O-220AB O-220AB ITO-220AB MIL-STD-750 HY12N65T 12N65T 12N65F

    SVD12N65F

    Abstract: No abstract text available
    Text: SVD12N65T/SVD12N65F 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’ s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored


    Original     		PDF SVD12N65T/SVD12N65F SVD12N65T O-220-3mperature( O-220-3L O-220F-3L SVD12N65F

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N65 Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors MOSFET which are produced by using UTC’s proprietary, planar stripe and DMOS technology.


    Original     		PDF 12N65 12N65 QW-R502-583

    Untitled

    Abstract: No abstract text available
    Text: AOT12N65/AOTF12N65 650V, 12A N-Channel MOSFET General Description Product Summary The AOT12N65 & AOTF12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT12N65/AOTF12N65 AOT12N65 AOTF12N65 AOT12N65L AOTF12N65L O-220 O-220F AOTF12N65

    AOTF12N65

    Abstract: No abstract text available
    Text: AOT12N65/AOTF12N65 650V, 12A N-Channel MOSFET General Description Product Summary The AOT12N65 & AOTF12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT12N65/AOTF12N65 AOT12N65 AOTF12N65 O-220 O-220F

    AOTF12N65

    Abstract: 12A 650V MOSFET
    Text: AOT12N65/AOTF12N65 650V, 12A N-Channel MOSFET General Description Product Summary The AOT12N65 & AOTF12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT12N65/AOTF12N65 AOT12N65 AOTF12N65 O-220 O-220F 12A 650V MOSFET

    Untitled

    Abstract: No abstract text available
    Text: AOW12N65/AOWF12N65 650V, 12A N-Channel MOSFET General Description Product Summary The AOW12N65 & AOWF12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing


    Original     		PDF AOW12N65/AOWF12N65 AOW12N65 AOWF12N65 O-262 O-262F AOWF12N65 OWF12N65

    Untitled

    Abstract: No abstract text available
    Text: AOW12N65/AOWF12N65 650V, 12A N-Channel MOSFET General Description Product Summary The AOW12N65 & AOWF12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing


    Original     		PDF AOW12N65/AOWF12N65 AOW12N65 AOWF12N65 O-262 O-262F

    Untitled

    Abstract: No abstract text available
    Text: AOW12N65/AOWF12N65 650V, 12A N-Channel MOSFET General Description Product Summary The AOW12N65 & AOWF12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing


    Original     		PDF AOW12N65/AOWF12N65 AOW12N65 AOWF12N65

    AOT12n65

    Abstract: No abstract text available
    Text: AOT12N65/AOTF12N65 650V, 12A N-Channel MOSFET General Description Product Summary The AOT12N65 & AOTF12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT12N65/AOTF12N65 AOT12N65 AOTF12N65 AOT12N65L AOTF12N65L AOTF12N65 AOT12n65

    Untitled

    Abstract: No abstract text available
    Text: AOT12N65/AOTF12N65 650V, 12A N-Channel MOSFET General Description Product Summary The AOT12N65 & AOTF12N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT12N65/AOTF12N65 AOT12N65 AOTF12N65 AOT12N65L AOTF12N65L O-220 O-220F F12N65

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N65 Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors MOSFET which are produced by using UTC’s proprietary, planar stripe and DMOS technology.


    Original     		PDF 12N65 O-220 12N65 O-220F O-220F1 QW-R502-583

    12A 650V MOSFET

    Abstract: 6A 650V MOSFET
    Text: SSFP12N65 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 650V Simple Drive Requirement ID25 = 12A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability


    Original     		PDF SSFP12N65 00A/s ISD12A di/dt200A/S width300S; 12A 650V MOSFET 6A 650V MOSFET

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Preliminary Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced by using UTC’s proprietary, planar stripe and DMOS technology.


    Original     		PDF 12N65K-MT 12N65K-MT QW-R502-B07

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Preliminary Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced by using UTC’s proprietary, planar stripe and DMOS technology.


    Original     		PDF 12N65K-MT 12N65K-MT O-220F2 QW-R502-B07

    11NM65N

    Abstract: STF11NM65 STF11NM65N STP11NM65N STB11NM65N STI11NM65N-STP11NM65N-STW11NM65N STI11NM65N stw11nm65n JESD97
    Text: STB11NM65N - STF11NM65N STI11NM65N-STP11NM65N-STW11NM65N N-channel 650V - 0.33Ω - 12A - TO-220/FP- D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @TJmax RDS(on) Max ID STI11NM65N 710 V < 0.38 Ω 12 A STB11NM65N 710 V < 0.38 Ω


    Original     		PDF STB11NM65N STF11NM65N STI11NM65N-STP11NM65N-STW11NM65N O-220/FP- O-247 STI11NM65N STB11NM65N STP11NM65N STW11NM65N 11NM65N STF11NM65 STF11NM65N STP11NM65N STI11NM65N-STP11NM65N-STW11NM65N STI11NM65N stw11nm65n JESD97

    11NM65N

    Abstract: STF11NM65 STI11NM65N STP11NM65N JESD97 STB11NM65N STF11NM65N STI11NM65N-STP11NM65N-STW11NM65N
    Text: STB11NM65N - STF11NM65N STI11NM65N-STP11NM65N-STW11NM65N N-channel 650V - 0.33Ω - 12A - TO-220/FP- D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @TJmax RDS(on) Max ID STI11NM65N 710 V < 0.38 Ω 12 A STB11NM65N 710 V < 0.38 Ω


    Original     		PDF STB11NM65N STF11NM65N STI11NM65N-STP11NM65N-STW11NM65N O-220/FP- O-247 STI11NM65N STB11NM65N STP11NM65N STW11NM65N 11NM65N STF11NM65 STI11NM65N STP11NM65N JESD97 STF11NM65N STI11NM65N-STP11NM65N-STW11NM65N

    SSE12N65SL

    Abstract: MosFET
    Text: SSE12N65SL 12A , 650V , RDS ON 0.8Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-220P DESCRIPTION The SSE12N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide


    Original     		PDF SSE12N65SL O-220P SSE12N65SL 07-Nov-2013 MosFET

    SSRF12N65SL

    Abstract: MosFET 6A 650V MOSFET
    Text: SSRF12N65SL 12A , 650V , RDS ON 0.8Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free ITO-220 DESCRIPTION The SSRF12N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide


    Original     		PDF SSRF12N65SL ITO-220 SSRF12N65SL 07-Nov-2013 MosFET 6A 650V MOSFET

    h12n65

    Abstract: 12A 650V MOSFET
    Text: HI-SINCERITY Spec. No. : MOS200902 Issued Date : 2009.03.24 Revised Date :2009.08.05 Page No. : 1/6 MICROELECTRONICS CORP. H12N65 Series H12N65 Series Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power MOSFET 650V,12A


    Original     		PDF MOS200902 H12N65 O-220AB O-220FP) H12N65F 183oC 217oC 260oC 12A 650V MOSFET

    Untitled

    Abstract: No abstract text available
    Text: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 650V 15mΩ @ VGS = 4.5V Features • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically


    Original     		PDF DMS3012SFG DS35441

    Untitled

    Abstract: No abstract text available
    Text: DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI Features Product Summary V BR DSS RDS(ON) 10mΩ @ VGS = 10V 650V 15mΩ @ VGS = 4.5V • ID TA = +25°C Package 12A POWERDI 3333-8 9.5A DIOFET utilizes a unique patented process to monolithically


    Original     		PDF DMS3012SFG DS35441