TRF 530
Abstract: torx 197 FF-SPE44 GR47 FF-SPS4 Series K720 FF39 Sav 36
Text: FO-52181-F 1 2 3 4 5 6 7 8 9 10 11 12 13 REV 1 2 3 4 5 O 5 50,0 1.97 N M CATALOG LISTING FF-SPE44QX2 15 14 DOCUMENT 200464 200586 201557 205716 0051891 CHANGED BY CHECK TRF 24MAY00 TRF 12JUN00 KED 31OCT00 GRT 13JUN02 MBN 12MAY09 SAV SAV SAV SAV CMH DESCRIPTION
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FO-52181-F
FF-SPE44QX2
24MAY00
12JUN00
31OCT00
13JUN02
12MAY09
FF-SPZSPX001
TRF 530
torx 197
FF-SPE44
GR47
FF-SPS4 Series
K720
FF39
Sav 36
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Untitled
Abstract: No abstract text available
Text: RW Vishay Sfernice Fixed Wirewound High Power Vitreous Resistors with Terminal Collars or Bands FEATURES • 10 W to 80 W at 25 °C • NF C 93-214 • RB 13 x 70 RB 20 x 117 • High power up to 80 W at 25 °C • High long term stability drift < 2.5 % after 5000 h
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2002/95/EC
11-Mar-11
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JEDEC SMT reflow profile
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR MATERIAL: GLASS FILED NYLON FLAMMABILITY RATING UL94-V0 COLOUR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRONZE NI PLATED QUALITY CLASS: - 3'' INCH GOLD -> CONTACT AREA
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UL94-V0
12-NOV-09
12-MNG:
12-MAY-09
26-NOV-08
24-NOV-08
04-MAR-08
13-FEB-08
21-NOV-07
JEDEC SMT reflow profile
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SMD Magnetics
Abstract: smd marking code pJ 1219 SMD PJ 899
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book smd magnetics, inductors and ferrite beads vishay Dale vse-db0059-1201e Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0059-1201e
SMD Magnetics
smd marking code pJ 1219
SMD PJ 899
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J-STD-020B
Abstract: VSMG2720 VSMG2720-GS08 VSMG2720-GS18
Text: VSMG2720 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • • • Package type: surface mount Package form: PLCC-2 Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75
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VSMG2720
J-STD-020
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
J-STD-020B
VSMG2720
VSMG2720-GS08
VSMG2720-GS18
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J-STD-020D
Abstract: VSMG3700 VSMG3700-GS08 VSMG3700-GS18 850 nm Infrared Emitting Diode smd
Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability
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VSMG3700
VSMG3700
18-Jul-08
J-STD-020D
VSMG3700-GS08
VSMG3700-GS18
850 nm Infrared Emitting Diode smd
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Untitled
Abstract: No abstract text available
Text: IHLP-5050CE-06 Vishay Dale 10 % DCR Tolerance, Low Profile, Power Inductors FEATURES • • • • • Lowest height 3.5 mm in this package footprint Shielded construction Frequency range up to 5.0 MHz Lowest DCR/µH, in this package size Handles high transient current spikes without
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IHLP-5050CE-06
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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TEMD5010X01
Abstract: No abstract text available
Text: TEMD5010X01 Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: top view • Dimensions L x W x H in mm : 5 x 4.24 x 1.12 • Radiant sensitive area (in mm2): 7.5 • AEC-Q101 qualified • High photo sensitivity
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TEMD5010X01
AEC-Q101
J-STD-020
TEMD5010X01
2002/95/EC
11-Mar-11
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TEMT7100X01
Abstract: J-STD-020D VSMB1940X01
Text: TEMT7100X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • • • • • • • • • • • 20043-1 DESCRIPTION • TEMT7100X01 is a silicon NPN epitaxial planar phototransistor with daylight blocking filter in a miniature,
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TEMT7100X01
TEMT7100X01
AEC-Q101
VSMB1940X01
J-STD-020
18-Jul-08
J-STD-020D
VSMB1940X01
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Untitled
Abstract: No abstract text available
Text: RWST Vishay Sfernice Fixed Wirewound High Power Vitreous Resistors Electrical Traction Model FEATURES • 95 W to 800 W at 25 °C • NF C 93-214 • RB 25 x 168, RB 30 x 250 • Rugged construction for use in severe environmental conditions • Compliant to RoHS directive 2002/95/EC
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2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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BA7 marking
Abstract: SFERNICE RW ba7 transistor Vishay Sfernice R010 R470 MODEL Series RB E12-E24 RB 61 sfernice RWST 30.250
Text: RWST Vishay Sfernice Fixed Wirewound High Power Vitreous Resistors Electrical Traction Model FEATURES • 95 W to 800 W at 25 °C • NF C 93-214 • RB 25 x 168, RB 30 x 250 • Rugged construction for use in severe environmental conditions • Compliant to RoHS directive 2002/95/EC
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2002/95/EC
18-Jul-08
BA7 marking
SFERNICE RW
ba7 transistor
Vishay Sfernice
R010
R470
MODEL Series RB
E12-E24
RB 61 sfernice
RWST 30.250
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RW 13x70
Abstract: RW RB 20.117 13X70 20K471 BA25 BO20 RB 61 sfernice 16X94 SFERNICE RW 8X34 SFERNICE RW 16
Text: RW Vishay Sfernice Fixed Wirewound High Power Vitreous Resistors with Terminal Collars or Bands FEATURES • 10 W to 80 W at 25 °C • NF C 93-214 • RB 13 x 70 RB 20 x 117 • High power up to 80 W at 25 °C • High long term stability drift < 2.5 % after 5000 h
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2002/95/EC
18-Jul-08
RW 13x70
RW RB 20.117
13X70
20K471
BA25
BO20
RB 61 sfernice
16X94
SFERNICE RW 8X34
SFERNICE RW 16
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IHSM-4825
Abstract: SCR SN 102 Vishay DaTE CODE IHSM4825
Text: IHSM-4825 Vishay Dale High Current, Surface Mount Inductors FEATURES • Flame retardant encapsulant UL 94 V-0 • Completely encapsulated winding provides superior environmental protection and moisture resistance • High current unit in surface mount package
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IHSM-4825
2002/95/EC
18-Jul-08
IHSM-4825
SCR SN 102
Vishay DaTE CODE
IHSM4825
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M95xx
Abstract: M95160 stmicroelectronics "serial eeprom" M95080 M95080-R M95080-W M95160-R M95160-W ufdfpn8 m95x
Text: M95160-x M95080-x 16 Kbit and 8 Kbit serial SPI bus EEPROM with high speed clock Features • Compatible with SPI bus serial interface positive clock SPI modes ■ Single supply voltage: – 4.5 V to 5.5 V for M95xxx – 2.5 V to 5.5 V for M95xxx-W – 1.8 V to 5.5 V for M95xxx-R
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M95160-x
M95080-x
M95xxx
M95xxx-W
M95xxx-R
M95xxx-F
40-year
M95xx
M95160
stmicroelectronics "serial eeprom"
M95080
M95080-R
M95080-W
M95160-R
M95160-W
ufdfpn8
m95x
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VSML3710
Abstract: VSML3710-GS08
Text: VSML3710 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • • • • Package type: surface mount Package form: PLCC-2 Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75
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VSML3710
VEMT3700
J-STD-020
AEC-Q101
2002/95/EC
2002/96/EC
18-Jul-08
VSML3710
VSML3710-GS08
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J-STD-020D
Abstract: VSMF4710 VSMF4710-GS08 VSMF4710-GS18
Text: VSMF4710 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability
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VSMF4710
VSMF4710
18-Jul-08
J-STD-020D
VSMF4710-GS08
VSMF4710-GS18
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J-STD-020D
Abstract: VSMG2700 VSMG2700-GS08 VSMG2700-GS18
Text: VSMG2700 Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 830 nm • High reliability
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VSMG2700
VSMG2700
18-Jul-08
J-STD-020D
VSMG2700-GS08
VSMG2700-GS18
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 66 FLAMABILITY RATING: UL94-V0 COLOR: WHITE TRANSPARENT PITCH: 3.96MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C COMPLIANCE: LEAD FREE AND ROHS ELECTRICAL CURRENT RATING: 7A WORKING VOLTAGE: 250V AC
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UL94-V0
12-MAY-09
26-MAR-07
26-JAN-07
31-MAR-04
14-MAY-02
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Untitled
Abstract: No abstract text available
Text: 6FL R , 12FL(R), 16FL(R) Series Vishay Semiconductors Fast Recovery Diodes (Stud Version), 6 A/12 A/16 A FEATURES • Short reverse recovery time • Low stored charge • Wide current range • Excellent surge capabilities • Standard JEDEC types • Stud cathode and stud anode versions
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DO-203AA
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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TEMT7000X01
Abstract: J-STD-020D VSMB1940X01 vsmb
Text: TEMT7000X01 Vishay Semiconductors Silicon Phototransistor in 0805 Package FEATURES • Package type: surface mount • Package form: 0805 • Dimensions L x W x H in mm : 2 x 1.25 x 0.85 • AEC-Q101 qualified • High photo sensitivity • High radiant sensitivity
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TEMT7000X01
AEC-Q101
VSMB1940X01
J-STD-020
TEMT7000X01
18-Jul-08
J-STD-020D
VSMB1940X01
vsmb
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Untitled
Abstract: No abstract text available
Text: TEMD5110X01 Vishay Semiconductors Silicon PIN Photodiode FEATURES • • • • • • • • • • • • 20535_1 DESCRIPTION TEMD5110X01 is a high speed and high sensitive PIN photodiode. It is a miniature surface mount device SMD including the chip with a 7.5 mm2 sensitive area and a
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TEMD5110X01
AEC-Q101
J-STD-020
2002/95/EC
2002/96/EC
TEMD5110X01
11-Mar-11
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VSMF3710
Abstract: VSMF3710-GS08 VSMF3710-GS18
Text: VSMF3710 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 890 nm • High reliability
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VSMF3710
J-STD-020
VSMF3710
18-Jul-08
VSMF3710-GS08
VSMF3710-GS18
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Untitled
Abstract: No abstract text available
Text: ja r LOG AA DRAWING MADE IN THIRD A N G LE PROJECTION TH IS DRAWING IS UNPUBLISHED . | R E LEA SE D FOR PUBLICATION REVISIONS .'•19 p Copyright .19 ■ _ by A M P Incorporated , Harrtsburg . P a . A l l international rights A M P PRODUCTS MAY BE CDVCREO BY U . S . AND FOREIGN PATENTS AND/OR PATENTS PENDING.
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ECO-07-025549
ECO-08-031715
12MAY09
1710S
28AW-G
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. k// COPYRIGHT - 5 6 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. L0C ALL RIGHTS RESERVED. REVISIONS DIST HM 00 P LTR DESCRIPTION DWN APVD J OBS 5 - , REV ECO—07—025549 19DEC07 LH SA K REVISED PER E C O -0 8 -0 3 1 715
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19DEC07
12MAY09
31MAR2000
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