Untitled
Abstract: No abstract text available
Text: DG3157A, DG3157B Vishay Siliconix Low Voltage, 300-MHz - 3 dB Bandwidth, SPDT Analog Switch with Power Down Protection 2:1 Multiplexer/Demultiplexer Bus Switch DESCRIPTION FEATURES The DG3157A, DG3157B are high-speed single-pole double-throw, low voltage switch. Using sub-micro CMOS
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DG3157A,
DG3157B
300-MHz
DG3157B
2011/65/EU
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Untitled
Abstract: No abstract text available
Text: DG2592 www.vishay.com Vishay Siliconix Audio Jack Detector with Send / End Detect DESCRIPTION FEATURES The DG2592 is an audio jack detector and pop noise control switch IC. It integrates the circuits necessary to detect the presence of a stereo headset with a microphone and send /
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DG2592
DG2592
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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DG4157DL-T1-GE3
Abstract: DG4157D DG4157
Text: DG4157 Vishay Siliconix Low Voltage, 1 Single SPDT Analog Switch 1:2 Multiplexer with Power Down Protection DESCRIPTION FEATURES The DG4157 is a high performance single pole double throw analog switch designed for 1.65 V to 5.5 V operation with single power rail.
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DG4157
DG4157
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
DG4157DL-T1-GE3
DG4157D
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Si4330DY
Abstract: Si4330DY-T1-E3
Text: Si4330DY Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0165 at VGS = 10 V 8.7 0.022 at VGS = 4.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg Tested Pb-free RoHS APPLICATIONS COMPLIANT
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Si4330DY
Si4330DY-T1-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: TLME/F/K2300 Vishay Semiconductors Power Mini SMD LED FEATURES • SMD LEDs with exceptional brightness • Luminous intensity categorized • Compatible with automatic placement e3 equipment • IR reflow soldering • Available in 8 mm tape • Low profile package
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TLME/F/K2300
08-Apr-05
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Si4431BDY-T1
Abstract: Si4431BDY Si4431BDY-T1-E3 si4431b
Text: Si4431BDY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V - 7.5 0.050 at VGS = - 4.5 V - 5.8 • TrenchFET Power MOSFETs Pb-free - 30 Available RoHS* COMPLIANT SO-8 S 1 8
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Si4431BDY
Si4431BDY-T1
Si4431BDY-T1-E3
08-Apr-05
si4431b
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SC-70-6
Abstract: SiA911DJ SiA911DJ-T1-E3
Text: New Product SiA911DJ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.094 at VGS = - 4.5 V - 4.5a 0.131 at VGS = - 2.5 V - 4.5a 0.185 at VGS = - 1.8 V - 4.5a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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SiA911DJ
SC-70-6
08-Apr-05
SiA911DJ-T1-E3
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3303B
Abstract: Equalizer delay reverb MPU401 VC33 WA20 atmel "marking" wA7 MARKING SAM3303B remix capacitors
Text: Features • • • • • • • • • • Three DSPs and 24-bit Audio Router On-chip 32 kHz to 96 kHz Sampling Rate 16-bit Microcontroller On-chip Variety of I/Os, including SmartMedia and DataFlash® Embedded RAM for Single Chip Operation 530 Kbits
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24-bit
16-bit
100-lead
ATSAM3303B
ATSAM3000
6091D
12-Feb-07
3303B
Equalizer delay reverb
MPU401
VC33
WA20
atmel "marking"
wA7 MARKING
SAM3303B
remix capacitors
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Untitled
Abstract: No abstract text available
Text: DG2723 Vishay Siliconix 700 MHz, - 3 dB Bandwidth; Dual SPDT Analog Switch DESCRIPTION FEATURES DG2723 is a low RON, high bandwidth analog switch configured in dual SPDT. It achieves 7 switch on resistance, greater than 700 MHz - 3 dB bandwidth with 5 pF
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DG2723
DG2723
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SI4406DY
Abstract: No abstract text available
Text: Si4406DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0045 at VGS = 10 V 20 0.0055 at VGS = 4.5 V 17 • TrenchFET Power MOSFET • Optimized for “Low Side” Synchronous Rectifier Operation • 100 % RG Tested
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Si4406DY
Si4406DY-T1
Si4406DY-T1-E3
18-Jul-08
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DG2722
Abstract: No abstract text available
Text: DG2722 Vishay Siliconix 2 Port, USB 2.0 High Speed 480 Mbps Switch, DPDT Analog Switch DESCRIPTION FEATURES The DG2722 is 2 port high speed analog switch optimized for USB 2.0 signal switching. The DG2722 switch is configured in DPDT. It handles bidirectional signal flow, achieving a
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DG2722
DG2722
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si4320DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.003 at VGS = 10 V 25 0.004 at VGS = 4.5 V 22 • TrenchFET Gen II • Ultra Low On-Resistance Using High Density TrenchFET Power MOSFET
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Si4320DY
Si4320DY-T1
Si4320DY-T1-E3
18-Jul-08
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DG2726
Abstract: No abstract text available
Text: DG2730 Vishay Siliconix 2 Port, USB 2.0 High Speed 480 Mbps Switch, DPDT Analog Switch DESCRIPTION FEATURES The DG2730 is 2 port high speed analog switch optimized for USB 2.0 signal switching. The DG2730 switch is configured in DPDT. It handles bidirectional signal flow, achieving a
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DG2730
DG2730
11-Mar-11
DG2726
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Untitled
Abstract: No abstract text available
Text: Si4378DY Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.0027 at VGS = 4.5 V 25 0.0042 at VGS = 2.5 V 22 • Ultra Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET Technology
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Si4378DY
Si4378DY-T1-E3
18-Jul-08
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74469
Abstract: 70306 SI4936BDY-T1-E3
Text: New Product Si4936BDY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.9 0.051 at VGS = 4.5 V 5.7 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS 4.5 nC • Low Current DC/DC Conversion
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Si4936BDY
Si4936BDY-T1-E3
18-Jul-08
74469
70306
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A1818
Abstract: SI4431BDY-T1-E3
Text: Si4431BDY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.030 at VGS = - 10 V - 7.5 0.050 at VGS = - 4.5 V - 5.8 • TrenchFET Power MOSFETs Pb-free - 30 Available RoHS* COMPLIANT SO-8 S 1 8
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Si4431BDY
Si4431BDY-T1
Si4431BDY-T1-E3
18-Jul-08
A1818
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Untitled
Abstract: No abstract text available
Text: Si4348DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0125 at VGS = 10 V 11 0.014 at VGS = 4.5 V 10 • TrenchFET Gen II Power MOSFET Pb-free APPLICATIONS RoHS • High-Side DC/DC Conversion
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Si4348DY
Si4348DY-T1-E3
08-Apr-05
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Si4394DY
Abstract: Si4394DY-T1-E3
Text: Si4394DY Vishay Siliconix New Product N-Channel Reduced Qgd, Fast Switching WFET FEATURES PRODUCT SUMMARY VDS V rDS(on) (Ω) 30 ID (A) 0.00825 at VGS = 10 V 15 0.00975 at VGS = 4.5 V 14 • Extremely Low Qgd WFET® Technology for Switching Losses • TrenchFET® Power MOSFET
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Si4394DY
Si4394DY-T1-E3
18-Jul-08
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Si4348DY
Abstract: Si4348DY-T1-E3
Text: Si4348DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.0125 at VGS = 10 V 11 0.014 at VGS = 4.5 V 10 • TrenchFET Gen II Power MOSFET Pb-free APPLICATIONS RoHS • High-Side DC/DC Conversion
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Si4348DY
Si4348DY-T1-E3
18-Jul-08
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Si4405DY
Abstract: Si4405DY-T1 Si4405DY-T1-E3 70315
Text: Si4405DY Vishay Siliconix New Product P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) - 30 0.0075 at VGS = - 10 V - 17 • TrenchFET Power MOSFETS • 100 % Rg Tested Available RoHS* COMPLIANT APPLICATIONS • Battery and Load Switching
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Si4405DY
Si4405DY-T1
Si4405DY-T1-E3
18-Jul-08
70315
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Untitled
Abstract: No abstract text available
Text: DG2723 www.vishay.com Vishay Siliconix 700 MHz, -3 dB Bandwidth; Dual SPDT Analog Switch DESCRIPTION FEATURES DG2723 is a low RON, high bandwidth analog switch configured in dual SPDT. It achieves 5.5 Ω switch on resistance, greater than 700 MHz -3 dB bandwidth with 5 pF
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DG2723
DG2723
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: DG2720 www.vishay.com Vishay Siliconix 2 Port, USB 2.0 High Speed 480 Mbps Switch, DPDT Analog Switch DESCRIPTION FEATURES The DG2720 is 2 Port high speed analog switch optimized for USB 2.0 signal switching. The DG2720 switch is configured in DPDT. It handles bidirectional signal flow,
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DG2720
DG2720
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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ARE083.3K04
Abstract: ARE0810K
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - 2 - ALL RIGHTS RESERVED. ACTUATOR LOC DIST AD 00 R E VIS IO N S LTR C COVER- DESCRIPTION DATE DWN 12FEB07 ECO— 07— 3389 APVD MB MS Specifications:
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12FEB07
L94V-0,
27MAR06
15FEB05
31MAR2000
ARE083.3K04
ARE0810K
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - 2 - ALL RIGHTS RESERVED. LOC DIST AF 50 REVISIONS P LTR B1 DESCRIPTION CREATED PER ECR-07-002951 DATE DWN APVD 12FEB07 MF KR C O N T I N U O U S STRIP ON REELS WITH T E R M I N A L S
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12FEB07
ECR-07-002951
12FEB2007
31MAR2000
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