HY62UF16201A-I
Abstract: HY62UF16201A
Text: HY62UF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others
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HY62UF16201A
128Kx16bit
HYUF621Ac
100ns
HY62UF16201A-I
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555H
Abstract: MX29F200B MX29F200T
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/15/2001
NOV/12/2001
555H
MX29F200B
MX29F200T
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Untitled
Abstract: No abstract text available
Text: WSF128K16-XXX 128Kx16 SRAM / NOR FLASH MODULE SMD 5962-96900* Weight FEATURES Access Times of 35ns (SRAM) and 70ns (FLASH) • WSF128K16-H1X — 13 grams typical • WSF128K16-XG1UX1 — 5 grams typical Access Times of 70ns (SRAM) and 120ns (FLASH)
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WSF128K16-XXX
128Kx16
WSF128K16-H1X
WSF128K16-XG1UX1
120ns
66-pin,
ICCx32
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE MRAM 128Kx16-SOP 3DMR2M16VS2427 Magnetoresistive Ram MODULE 2 Mbit MRAM organized as 128Kx16 Pin Assignment Top View SOP 54 (Pitch : 0.80 mm) Features - Organized as 128Kx16. - Single +3.3V +/-0.3V power supply operation. - Symetrical high-speed read and write fast access
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128Kx16-SOP
3DMR2M16VS2427
128Kx16
128Kx16.
MMXX00000000XXX
3DFP-0427-REV
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Untitled
Abstract: No abstract text available
Text: WSF2816-39XX 128Kx16 SRAM / 512Kx16 NOR FLASH MODULE Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation FEATURES Access Times of 35ns SRAM and 90ns (FLASH) Weight: Packaging • WSF2816-39G2UX - 8 grams typical
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WSF2816-39XX
128Kx16
512Kx16
WSF2816-39G2UX
WSF2816-39H1X
ICCx16
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Untitled
Abstract: No abstract text available
Text: HY62QF16201A Series 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 05 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others
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HY62QF16201A
128Kx16bit
LL/SL-pa6201A
HYQF621Ac
100ns
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Untitled
Abstract: No abstract text available
Text: K7A203600B K7A203200B K7A201800B Preliminary 64Kx36/x32 & 128Kx18 Synchronous SRAM Document Title 64Kx36 & 64Kx32 & 128Kx18-Bit Synchronous Pipelined Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft Dec. 10. 2001 Preliminary 0.1 1. Add tCYC 250,225, 200MHz bin.
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K7A203600B
K7A203200B
K7A201800B
64Kx36/x32
128Kx18
64Kx36
64Kx32
128Kx18-Bit
200MHz
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23265
Abstract: No abstract text available
Text: NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02L1618C1A Advance Information 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Overview Features The N02L1618C1A is an integrated memory
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N02L1618C1A
128Kx16
N02L1618C1A
N02L163WN1A,
3265-A
23265
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Untitled
Abstract: No abstract text available
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
DEC/20/1999
PM0549
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29F200T
Abstract: No abstract text available
Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz
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MX29F200T/B
256Kx8/128Kx16]
131072x16/262144x8
55/70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/15/2001
NOV/12/2001
29F200T
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SD10
Abstract: SD13 SD14 SD15 WSF128K16-XXX scs 2003
Text: White Electronic Designs WSF128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES TTL Compatible Inputs and Outputs Access Times of 35ns SRAM and 70ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation Access Times of 70ns (SRAM) and 120ns (FLASH)
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WSF128K16-XXX
128Kx16
120ns
WSF128K16-XHX
WSF128K16-H1X
WSF128K16-XG1UX1
WSF128K16-XG1TX
66-pin,
SD10
SD13
SD14
SD15
WSF128K16-XXX
scs 2003
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SM-1994
Abstract: No abstract text available
Text: HY62UF16200/ HY62QF16200/ HY62EF16200/ HY62SF16200 Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16200 / HY62QF16200 / HY62EF16200 / HY62SF16200 is a high speed, super low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bits. The
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HY62UF16200/
HY62QF16200/
HY62EF16200/
HY62SF16200
128Kx16bit
HY62UF16200
HY62QF16200
HY62EF16200
16bits.
SM-1994
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KM718V787-10
Abstract: KM718V787-8 KM718V787-9
Text: PRELIMINARY KM718V787 128Kx18 Synchronous SRAM Document Title 128Kx18-Bit Synchronous Burst SRAM, 3.3V Power Datasheets for 100TQFP Revision History Rev. No. History Draft Date Remark Rev. 0.0 Initial draft Nov. 02. 1996 Preliminary Rev. 1.0 Final spec release
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KM718V787
128Kx18
128Kx18-Bit
100TQFP
100-TQFP-1420A
KM718V787-10
KM718V787-8
KM718V787-9
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SM-1994
Abstract: No abstract text available
Text: HY62UF16201 Series 128Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16201 is a high speed, low power and 2M bit full CMOS SRAM organized as 131,072 words by 16bit. The HY62UF16201 uses high performance full CMOS process technology and designed for high speed low power circuit
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HY62UF16201
128Kx16bit
16bit.
48ball
SM-1994.
SM-1994
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Untitled
Abstract: No abstract text available
Text: HY62LF16206B-DT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5V Low Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Apr. 6. 2003 Final This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
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HY62LF16206B-DT12C
128Kx16bit
HY62LF16206B
16bits.
120ns
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25fv
Abstract: EM128P16B EM128P16T 48-pin TSOP standard dimensions
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM128P16 Preliminary EM128P16 Family 128Kx16 bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM128P16 is an integrated memory device
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EM128P16
EM128P16
128Kx16
25fv
EM128P16B
EM128P16T
48-pin TSOP standard dimensions
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Untitled
Abstract: No abstract text available
Text: Preliminary b q 4 0 2 4 / b q 4 0 2 4 Y BENCHMARQ 128KX16 Nonvolatile SRAM Features General Description > D ata retention in the absence of The CMOS bq4024 is a nonvolatile 2,097,152-bit static RAM organized as 131,072 words by 16 bits. The in te g ra l co n tro l circ u itry an d
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128KX16
bq4024
152-bit
40-pin
10-year
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Untitled
Abstract: No abstract text available
Text: VZÀ WHITE /M IC R O E L E C T R O N IC S 128Kx16 SRAM/FLASH MODULE WSF128K16-XXX P R E LIM IN A R Y * FEATURES FLASH MEM ORY FEATURES • Access Times of 35nS SRAM and 70nS (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 70nS (SRAM) and 120nS (FLASH)
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WSF128K16-XXX
128Kx16
120nS
66-pin,
256Kx8
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256x16* STATIC RAM
Abstract: c28w Video RAM SIO12 AK5216128WV-10 AK5216128WV-12 AK5216128WV-80 SIo-12 BY164 48aa50
Text: ACCUTEK MICROCIRCUIT 31E D • 01071=47 GOGOCia? T ■ ACU T -4 6 -2 3 -2 0 ACCUTEK MICROCIRCUIT AK5216128WV 128Kx 16/256x16 Dual Port Video Ram The Accutek AK5216128 is a 2 MEG-bit Dual Port Dynamic Memory Video Module. The module contains a 128Kx16 DRAM
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T-46-23-20
AK5216128WV
128Kx
16/256x16
AK5216128
33MHz.
128Kx16bit
256x16
AK5216128WV-10
256x16* STATIC RAM
c28w
Video RAM
SIO12
AK5216128WV-10
AK5216128WV-12
AK5216128WV-80
SIo-12
BY164
48aa50
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128KX16
Abstract: DQ10C
Text: BENCHMARQ_ bq4024/bq4024Y 128Kx16 Nonvolatile SRAM Features General Description ► D ata retention in th e absence of power The CMOS bq4024 is a nonvolatile 2,097,152-bit sta tic RAM organized as 131,072 w ords by 16 bits. The in te g ral control circu itry an d lith
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bq4024/bq4024Y
128Kx16
40-pin
10-year
bq4024
152-bit
DQ10C
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Untitled
Abstract: No abstract text available
Text: KM718V787A 128Kx18 Synchronous SRAM Document Title 128Kx18-Bit Synchronous Burst SRAM Revision History v. No. Historv Draft Date REMARK 0.0 Initial draft. Sep. 16. 1998 Prelim inary 1.0 Final spec release. Nov. 16. 1998 Final 2.0 Add Supply voltage 2.5V
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KM718V787A
128Kx18
128Kx18-Bit
100-TQFP-1420A
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Untitled
Abstract: No abstract text available
Text: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/
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SST32LH802
128Kx16
SST32LH802
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 128Kx18 Synchronous SRAM KM718V789A Document Title 128Kx18-Bit Synchronous Pipelined Burst SRAM BeyisionHislory Rev. No. 0.0 History Initial draft Draft Date Remark Sep. 16. 1998 Prelim inary The attached data sheets are prepared and approved by SAM S U N G Electronics. S AM SU NG Electronics CO., LTD. reserve the right to change the
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128Kx18
KM718V789A
128Kx18-Bit
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Untitled
Abstract: No abstract text available
Text: WSF128K16-XXX •lì Hi-R£LiASIÜTY PRODUCT 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES ■ Com m ercial, Industrial and M ilita ry Tem perature Ranges ■ Access Tim es o f 35ns SRAM and 70ns (FLASH) ■ TTL C om patible Inputs and O utputs ■ Access Tim es o f 70ns (SRAM) and 120ns (FLASH)
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WSF128K16-XXX
128Kx16
120ns
01HXX
01HYX
02HXX
02HYX
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