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    Texas Instruments BQ4024YMA-85

    NON-VOLATILE SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 40; Package Code: DIP; Package Shape: RECTANGULAR; No. of Words: 131072 words;
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    Vyrian BQ4024YMA-85 174
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    Texas Instruments BQ4024MA-85

    NON-VOLATILE SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 40; Package Code: DIP; Package Shape: RECTANGULAR; No. of Words: 131072 words;
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian BQ4024MA-85 45
    • 1 -
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    BQ4024 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    bq4024 Texas Instruments 128K x 16 Nonvolatile SRAM Original PDF
    BQ4024-120 Benchmarq nvSRAM Original PDF
    BQ4024-85 Benchmarq nvSRAM Original PDF
    BQ4024MA-120 Texas Instruments 128K x 16 Nonvolatile SRAM Original PDF
    bq4024MA-120 Texas Instruments 128K x 16 Nonvolatile SRAM Scan PDF
    BQ4024MA-85 Texas Instruments 128K x 16 Nonvolatile SRAM Original PDF
    bq4024MA-85 Texas Instruments 128K x 16 Nonvolatile SRAM Scan PDF
    bq4024Y Texas Instruments 128K x 16 Nonvolatile SRAM Original PDF
    BQ4024Y-120 Benchmarq nvSRAM Original PDF
    BQ4024Y-85 Benchmarq nvSRAM Original PDF
    BQ4024YMA-120 Texas Instruments 128K x 16 Nonvolatile SRAM Original PDF
    bq4024YMA-120 Texas Instruments 128K x 16 Nonvolatile SRAM Scan PDF
    BQ4024YMA-85 Texas Instruments 128K x 16 Nonvolatile SRAM Original PDF
    bq4024YMA-85 Texas Instruments 128K x 16 Nonvolatile SRAM Scan PDF

    BQ4024 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    bq4024

    Abstract: bq4024MA
    Text: bq4024/bq4024Y 128Kx16 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4024 is a nonvolatile 2,097,152-bit static RAM organized as 131,072 words by 16 bits. The integral control circuitry and lithium energy source provide reliable


    Original     		bq4024/bq4024Y 128Kx16 bq4024 152-bit 40-pin bq4024MA PDF

    bq4024

    Abstract: bq4024Y 2M x 16 SRAM
    Text: bq4024/bq4024Y 128Kx16 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4024 is a nonvolatile 2,097,152-bit static RAM organized as 131,072 words by 16 bits. The int egr al co ntr ol ci rc uit ry and li thi um ene rgy so urc e pr ovid e


    Original     		bq4024/bq4024Y 128Kx16 bq4024 152-bit 40-pin bq4024Y 2M x 16 SRAM PDF

    bq4024Y

    Abstract: bq4024
    Text: bq4024/bq4024Y 128Kx16 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4024 is a nonvolatile 2,097,152-bit static RAM organized as 131,072 words by 16 bits. The i ntegr al co ntr ol ci rc uitry and l ithi um ener gy so urc e pr ovi de


    Original     		bq4024/bq4024Y 128Kx16 bq4024 152-bit 40-pin bq4024Y PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary b q 4 0 2 4 / b q 4 0 2 4 Y BENCHMARQ 128KX16 Nonvolatile SRAM Features General Description > D ata retention in the absence of The CMOS bq4024 is a nonvolatile 2,097,152-bit static RAM organized as 131,072 words by 16 bits. The in te g ra l co n tro l circ u itry an d


    OCR Scan     		128KX16 bq4024 152-bit 40-pin 10-year PDF

    128KX16

    Abstract: DQ10C
    Text: BENCHMARQ_ bq4024/bq4024Y 128Kx16 Nonvolatile SRAM Features General Description ► D ata retention in th e absence of power The CMOS bq4024 is a nonvolatile 2,097,152-bit sta tic RAM organized as 131,072 w ords by 16 bits. The in te g ral control circu itry an d lith ­


    OCR Scan     		bq4024/bq4024Y 128Kx16 40-pin 10-year bq4024 152-bit DQ10C PDF

    25X1

    Abstract: bq4024 bq4024Y
    Text: bq4024/bq4024Y BENCHMARQ 128Kx16 Nonvolatile SRAM Features General Description >• D ata retention in th e absence of power T he CMOS bq4024 is a nonvolatile 2,097,152-bit static RAM organized as 131,072 w ords by 16 b its. The i n t e g r a l c o n tr o l c ir c u it r y a n d


    OCR Scan     		bq4024/bq4024Y 128Kx16 40-pin 10-year bq4024 152-bit D0037Q0 25X1 bq4024Y PDF

    TPU80

    Abstract: No abstract text available
    Text: bq4024/bq4024Y BENCHJWARQ f e 128Kx16 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4024 is a nonvolatile 2,097,152-bit static RAM organized as 131,072 words by 16 bits. The in t e g r a l c o n tr o l c ir c u itr y and


    OCR Scan     		bq4024/bq4024Y 128Kx16 bq4024 152-bit TPU80 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary bq4024/bq4024Y 128KX16 Nonvolatile SRAM Features General Description ► D ata retention in the absence of power The CMOS bq4024 is a nonvolatile 2,097,152-bit static RAM organized as 131,072 words by 16 bits. The in t e g r a l c o n tr o l c ir c u it r y a n d


    OCR Scan     		bq4024/bq4024Y bq4024 128KX16 40-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4024/bq4024Y 128Kx16 Nonvolatile SRAM Features General Description ► D ata retention in th e absence of power The CMOS bq4024 is a nonvolatile 2,097,152-bit static RAM organized as 131,072 w ords by 16 bits. The i n t e g r a l c o n tr o l c ir c u it r y a n d


    OCR Scan     		bq4024/bq4024Y 128Kx16 40-pin 10-year bq4024 152-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4024/bq4024Y BENCHMARQ 128Kx16 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4024 is a nonvolatile 2,097,152-bit static RAM organized as 131,072 words by 16 bits. The in te g r a l co n tro l c irc u itry a n d


    OCR Scan     		bq4024/bq4024Y 128Kx16 bq4024 152-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4024/bq4024Y 128Kx16 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4024 is a nonvolatile 2,097,152-bit static RAM organized as 131,072 words by 16 bits. The in te g ra l control circu itry and lithium energy source provide reli­


    OCR Scan     		bq4024/bq4024Y 128Kx16 40-pin 10-year bq4024 152-bit PDF

    BENCHMARQ MICROELECTRONICS

    Abstract: No abstract text available
    Text: bq4024/bq4024Y 128Kx16 Nonvolatile SRAM Features General Description >• D ata reten tio n in th e absence of power The CMOS bq4024 is a nonvolatile 2,097,152-bit sta tic RAM organized as 131,072 w ords by 16 bits. The in te g ra l control circuitry a n d lith ­


    OCR Scan     		bq4024/bq4024Y 128Kx16 40-pin 10-year bq4024 152-bit BENCHMARQ MICROELECTRONICS PDF

    ELAP CM 72

    Abstract: ELAP cm 76 fm transmitter 2KM documentation DDU-66F-XXX ELAP CM 140 hp laptop battery pack pinout semi catalog EB 203 D maxim evaluation kit touch dimmer TC 306 S
    Text: Data B ook C o n t e n t s •S h o r t • F irst • S a l e s -Fo -Pa O rm g e C atalog Data S h e e t s ffic es CD •C ROM C o n ten ts: o m p l e t e Data S an d A pplication fo r A l l • U s e r 's G P h e e t s n o t e s r o d u c ts uides p. -••x;. < ~x3xxr r -> ~' ' fP 5 > g? 3


    OCR Scan     		PDF

    charger NiMh 4 ch

    Abstract: clock ic dip pack bq20xx soic 28 lead acid battery charger module gas gauge "lead acid" BQ2002* NiMH charger application note bq4013 BQ4025
    Text: Nonvolatile SRAM s Benchmarq’s nonvolatile static random-access memories NVSRAMs integrate—in a single-DIP package—extremely low standby power SRAM, nonvolatile control circuitry, and a long-life lithium cell. The NVSRAMs combine secure nonvolatility (more than 10 years in the


    OCR Scan     		bq40l0 bq40lI bq4013 bq40I4 bq4024 bq4015 bq4025 bq4115 bq40l6 bq4017 charger NiMh 4 ch clock ic dip pack bq20xx soic 28 lead acid battery charger module gas gauge "lead acid" BQ2002* NiMH charger application note PDF

    nv SRAM cross reference

    Abstract: Dallas 1225 AB M48Z128-XXXPM1 ds1265 32pin 2kx8 sram cross reference bq4010ym DSI230Y-XXX S1258 dallas ds1213c 2M x 16 SRAM
    Text: Memory Products The centerpiece of the Memory Products family is our broad portfolio of Nonvolatile SRAM modules. Built using low-power SRAM, nonvolatile memory controllers and lithium batteries, these modules offer nonvolatile storage that can be read and written


    OCR Scan     		DS1258AB-XXX DS1258Y-XXX DS1220AB-XXX 1220AB-XXX-IND DS1220AD-XXX DS1220AD-XXX-IND DS1225AB-XXX DS1225AD-XXX 1225AD-XXX-IND nv SRAM cross reference Dallas 1225 AB M48Z128-XXXPM1 ds1265 32pin 2kx8 sram cross reference bq4010ym DSI230Y-XXX S1258 dallas ds1213c 2M x 16 SRAM PDF

    BQ4025

    Abstract: bq4025Y
    Text: dcnci iwiARQ Nonvolatile Static RAM Family Summary Data Sheet Family Features General Description a -10% supply tolerance. No suffix denotes a -5% supply tolerance. >• D ata retention in the absence of power The CMOS nonvolatile static RAM NVSRAM fam ily is available in a


    OCR Scan     		PDF

    stopwatch using 8051 microcontroller

    Abstract: 3Gxxx S1249 32k sram card 20pin battery BA 92 SAMSUNG semiconductor replacement M46Z128Y-XXXPM1 245AB-XXX-IND 50K ohm Trimmer Trim Pot Variable Resistor DS0621-SDK si288
    Text: SHORT tMWì DALLAS SEMICONDUCTOR APRIL 1996 http://www.dalsemi.com For the latest information about every product we make, visit our World Wide Web site. You’ll find the most complete, up-to-date information about our products available seven days a week, 24 hours a day. H ere’s just some o f what you’ll find:


    OCR Scan     		150-mil S2105 S2105 stopwatch using 8051 microcontroller 3Gxxx S1249 32k sram card 20pin battery BA 92 SAMSUNG semiconductor replacement M46Z128Y-XXXPM1 245AB-XXX-IND 50K ohm Trimmer Trim Pot Variable Resistor DS0621-SDK si288 PDF