nec dsp 32bit opcode
Abstract: D481850
Text: PRELIMINARY NEC / MOS Integrated Circuit UPD481850 8Mb Synchronous Graphics Memory 128Kword x 32b it x 2 Banks p.PD481850 is a synchronous graphics memory (SGRAM) organized as 128Kwords x 32bit x 2 Bank random access port. This device can operate up to 100MHz by using synchronous
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128Kword
uPD481850
128Kwords
32bit
100MHz
nec dsp 32bit opcode
D481850
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MT28C3212P2FL
Abstract: MT28C3212P2NFL FX433 FY442
Text: ADVANCE‡ 2 MEG x 16 PAGE FLASH 128K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C3212P2FL MT28C3212P2NFL Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View • Flexible dual-bank architecture • Support for true concurrent operations with no
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MT28C3212P2FL
MT28C3212P2NFL
66-Ball
32K-word
128K-words
MT28C3212P2FL
MT28C3212P2NFL
FX433
FY442
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TRS-150
Abstract: No abstract text available
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N02C1630E1AM Advance Information N02C1630E1AM Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View
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N02C1630E1AM
66-Ball
32K-word
128K-words
23134-C
TRS-150
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MB81G83222-010
Abstract: MB81G83222-012 MB81G83222-015 MB81G83222PQ 216-0040
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-12101-2E MEMORY CMOS 2 x 128K × 32 SYNCHRONOUS GRAM MB81G83222-010/-012/-015 CMOS 2 BANKS OF 131,072-WORDS × 32-BIT SYNCHRONOUS GRAPHIC RANDOM ACCESS MEMORY • DESCRIPTION The Fujitsu MB81G83222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing
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DS05-12101-2E
MB81G83222-010/-012/-015
072-WORDS
32-BIT
MB81G83222
32-bit
F9703
MB81G83222-010
MB81G83222-012
MB81G83222-015
MB81G83222PQ
216-0040
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FY442
Abstract: FY444 FY445
Text: 2 MEG x 16 PAGE FLASH 128K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C3212P2FL MT28C3212P2NFL Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View • Flexible dual-bank architecture • Support for true concurrent operations with no
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32K-word
128K-words
80Vout
MT28C3212P2FL
FY442
FY444
FY445
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mb8114
Abstract: Fujitsu DRAM
Text: August 1994 Edition 1.0 FUJITSU DATA SHEET M B 8 1 1 4 1 6 2 3 -010/-012/-015 CMOS 2 X 128KX 16 SYNCHRONOUS DRAM CMOS 2 BANKS OF 131,072-WORDS x 16-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB81141623 is a CMOS Synchronous Dynamic Random Access Memory
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128KX
072-WORDS
16-BIT
MB81141623
MB81141623-015
JV0043-947J1
mb8114
Fujitsu DRAM
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HM62G36128
Abstract: HM62G36128BP-4 HM62G36128BP-5 SA10 SA11 SA13 SA15 SA16 Hitachi DSA00481
Text: HM62G36128 Series 4M Synchronous Fast Static RAM 128k-words x 36-bits ADE-203-1008(Z) Preliminary, Rev. 0.0 Feb. 5, 1999 Features • • • • • • • • • • • • • • • • 3.3V+10%, –5% Operation 4M bit density 200MHz - 250MHz frequency
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HM62G36128
128k-words
36-bits)
ADE-203-1008
200MHz
250MHz
119pin
HM62G36128BP-4
HM62G36128BP-5
SA10
SA11
SA13
SA15
SA16
Hitachi DSA00481
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tms 1035
Abstract: 74F00 74F153 74HCT4040 ADSP-21020 HN27C256FP-25T spl21k 280257 BY275
Text: JTAG Downloader 10 The ADSP-21020 has two external memory spaces—data memory which is 40-bits wide and stores data and program memory (which is 48-bits wide and can store instructions and data). After power-on reset, external RAM in the system is uninitialized. You must provide a method of
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ADSP-21020
40-bits
48-bits
MAUNDER90]
tms 1035
74F00
74F153
74HCT4040
HN27C256FP-25T
spl21k
280257
BY275
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Untitled
Abstract: No abstract text available
Text: [» [iS C m Y O !* ] In te l A28F200BX-T/B 2-MBIT 128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY Automotive x8/x16 Input/Output Architecture — A28F200BX-T, A28F200BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs Optimized High Density Blocked
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A28F200BX-T/B
x8/x16
A28F200BX-T,
A28F200BX-B
16-bit
32-bit
APA28F200BX-T90
APA28F200BX-B90
A28F400BX
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NM27C010
Abstract: No abstract text available
Text: General Description The NM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The “Don’t Care” feature during read operations allows memory expansions from 1M to 8M bits with
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NM27C010
576-bit
128K-words
28-pin
ds010798
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tms320cXX
Abstract: TMS57002 tms320c26 dsk TMS320C26 TMS320C31 TMS DASP 93C26 h004 ti31 CS4248
Text: S.E.E.D. Mr. M. Marani Viale Roma 88/A 54100 Massa MS Italy (+39) 585 792990 Fax: (+39) 585 792989 e-mail: mc4453@mclink.it Company Background S.E.E.D. is an association of electronic engineers and computer science specialists, founded in 1993 and based in Massa, Italy. S.E.E.D. operates in the DSP field giving consulting about specific applications of the customers and is able to design or integrate
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mc4453
RS-232
RS232
TMS57002
CS4225
TMS320C26
tms320cXX
TMS57002
tms320c26 dsk
TMS320C26
TMS320C31
TMS DASP
93C26
h004
ti31
CS4248
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MB81G83222-010
Abstract: MB81G83222-012 MB81G83222 MB81G83222-015
Text: ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ – PRELIMINARY – ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ December 1995 Edition 2.1 PRODUCT PROFILE SHEET MB81G83222-010/-012/-015 CMOS 2 x 128K x 32 SYNCHRONOUS GRAM CMOS 2 BANKS OF 131,072-WORDS x 32-BIT
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MB81G83222-010/-012/-015
072-WORDS
32-BIT
MB81G83222
32-bit
MB81G83222-010
MB81G83222-012
MB81G83222-015
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LX50CM4128
Abstract: linvex technology
Text: LINVEX TECHNOLOGY, CORP. LX50CM4128 512K x 8 Bit ROM and 128K x 8 Bit SRAM Low Voltage Combo Memory FEATURES GENERAL DESCRIPTION • Both ROM and RAM in one chip • Wide Operating Voltage Range: 1.8 - 3.3V • Fast Access Time 1.8 V Operation: 500 ns Max.
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LX50CM4128
LX50CM4128
A0-A18
A0-A16
linvex technology
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Untitled
Abstract: No abstract text available
Text: HM67S36130 Series 4M Synchronous Fast Static RAM 128k-words x 36-bits ADE-203-659B(Z) Product Preview Rev. 2 Nov. 18, 1997 Features • • • • • • • • • • 3.3V ± 5% Operation LVCMOS Compatible Input and Output Synchronous Operation Internal self-timed Late Write
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HM67S36130
128k-words
36-bits)
ADE-203-659B
HM67S36130BP-7
BP-119A)
HM67S18258BP-7H
HM67S18258BP-7
BP-119
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29050
Abstract: No abstract text available
Text: Ä m K l i 0M 1F® I^Ö M 1Ä ¥D ® M in te l A28F200BX-T/B 2-MBIT 128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY Automotive a x8/x16 Input/Output Architecture • ■ ■ ■ ■ ■ — A28F200BX-T, A28F200BX-B — For High Performance and High
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A28F200BX-T/B
x8/x16
A28F200BX-T,
A28F200BX-B
16-bit
32-bit
A28F200BX-T/B
APA28F200BX-T90
APA28F200BX-B90
29050
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FY442
Abstract: 128k memory ram MT28C3212P2FL MT28C3212P2NFL 150MAX FX433
Text: 2 MEG x 16 PAGE FLASH 128K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY MT28C3212P2FL MT28C3212P2NFL Low Voltage, Extended Temperature FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View • Flexible dual-bank architecture • Support for true concurrent operations with no
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MT28C3212P2FL
MT28C3212P2NFL
66-Ball
32K-word
128K-words
65ction
MT28C3212P2FL
FY442
128k memory ram
MT28C3212P2NFL
150MAX
FX433
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HM67S36130
Abstract: HM67S36130BP-7 SA10 SA11 SA12 SA13 SA15 SA16 Hitachi DSA0015
Text: HM67S36130 Series 4M Synchronous Fast Static RAM 128k-words x 36-bits ADE-203-659B(Z) Product Preview, Rev. 2 Nov. 18, 1997 Features • • • • • • • • • • 3.3V ± 5% Operation LVCMOS Compatible Input and Output Synchronous Operation Internal self-timed Late Write
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HM67S36130
128k-words
36-bits)
ADE-203-659B
HM67S36130BP-7
BP-119A)
HM67S18258BP-7H
HM67S18258BP-7
HM67S36130BP-7
SA10
SA11
SA12
SA13
SA15
SA16
Hitachi DSA0015
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ecg semiconductors master replacement guide
Abstract: BLOCK DIAGRAM FOR LPG GAS DETECTION digital blood glucose monitoring circuit diagram 12v dc to 200v ac inverter 100w circuit diagrams schematic diagram 48v bldc motor speed controller ultrasound piezoelectric design probe transducer finger pulse oximeter block diagram of ct scanner TRANSISTOR REPLACEMENT ECG ECG HEART BEAT SENSOR
Text: TM Technology for Innovators Medical Applications Guide Amplifiers, Clocks, Data Converters, Digital Signal Processors, Digital Temperature Sensors, Interface, Logic, Microcontrollers, Power Management, RF ICs 2Q 2007 ➔ Inside Consumer and Portable Medical 3
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MSP430
SLYB108B
ecg semiconductors master replacement guide
BLOCK DIAGRAM FOR LPG GAS DETECTION
digital blood glucose monitoring circuit diagram
12v dc to 200v ac inverter 100w circuit diagrams
schematic diagram 48v bldc motor speed controller
ultrasound piezoelectric design probe transducer
finger pulse oximeter
block diagram of ct scanner
TRANSISTOR REPLACEMENT ECG
ECG HEART BEAT SENSOR
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27C040
Abstract: 27C256 27C512 FM27C010 27C512 UV
Text: FM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM General Description The FM27C010 is one member of a high density EPROM Family which range in densities up to 4 Megabit. The FM27C010 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized
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FM27C010
576-Bit
FM27C010
576-bit
128K-words
27C040
27C256
27C512
27C512 UV
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M29DW256
Abstract: 0C60000 06FFFFF 013F 099FFFF
Text: 256Mb: 3V Embedded Parallel NOR Flash Features Micron Parallel NOR Flash Embedded Memory M29DW256G X16 Multiple Bank, Page, Dual Boot 3V Supply Flash Memory Features • VPP/WP# pin for fast program and write – Protects the four outermost parameter blocks
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256Mb:
M29DW256G
32-word
256-word
09005aef84ecabef
M29DW256
0C60000
06FFFFF
013F
099FFFF
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28F400BC
Abstract: AB28F200BXB90 8XC196KC logical block diagram of 80286 microprocessor 80286 internal architecture 80960CA A28F200BX-B A28F200BX-T
Text: A28F200BX-T B 2-MBIT 128K x 16 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY Automotive Y x8 x16 Input Output Architecture A28F200BX-T A28F200BX-B For High Performance and High Integration 16-bit and 32-bit CPUs Y Optimized High Density Blocked Architecture One 16 KB Protected Boot Block
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A28F200BX-T
A28F200BX-B
16-bit
32-bit
AB28F200BX-T90
AB28F200BX-B90
A28F400BX
28F400BC
AB28F200BXB90
8XC196KC
logical block diagram of 80286
microprocessor 80286 internal architecture
80960CA
A28F200BX-B
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MB81G83222-012
Abstract: MB81G83222-010 MB81G83222-015
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-12101-2E MEMORY CMOS 2 x 128K × 32 SYNCHRONOUS GRAM MB81G83222-010/-012/-015 CMOS 2 BANKS OF 131,072-WORDS × 32-BIT SYNCHRONOUS GRAPHIC RANDOM ACCESS MEMORY • DESCRIPTION The Fujitsu MB81G83222 is a CMOS Synchronous Graphic Random Access Memory SGRAM containing
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DS05-12101-2E
MB81G83222-010/-012/-015
072-WORDS
32-BIT
MB81G83222
32-bit
F9607
MB81G83222-012
MB81G83222-010
MB81G83222-015
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OMRON EE-sx 412
Abstract: transistor D526 equivalent OMRON ee-sx 416 CS1W-CN118 cable OMRON sysmac c20 programming manual RELAY RM2 TR1 NJ-30 R88D-KN user manual error codes
Text: Solution Selection Guide 2014 Au t o m a t i o n S y s t e m s M o t i o n & D r i ve s Sensing Co n t ro l Co m p o n e n t s S w i t c h i n g Co m p o n e n t s S a fe t y Better machines OMRON Automation and Safety is a leading global supplier of automation systems serving industrial
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X302-E3-06
OMRON EE-sx 412
transistor D526 equivalent
OMRON ee-sx 416
CS1W-CN118 cable
OMRON sysmac c20 programming manual
RELAY RM2 TR1
NJ-30
R88D-KN user manual error codes
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28F400BC
Abstract: AB28F200BX-B90 29050 AB28F
Text: M M /M'Vam OKllF ISIMiaTO Kl A28F200BX-T/B 2-MBIT 128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY A utom otive • Very High-Performance Read — 90 ns Maximum Access Time — 45 ns Maximum Output Enable Time ■ x8/x16 Input/Output Architecture — A28F200BX-T, A28F200BX-B
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A28F200BX-T/B
x8/x16
A28F200BX-T,
A28F200BX-B
16-bit
32-bit
A28F200BX-T/B
AB28F200BX-T90
AB28F200BX-B90
A28F400BX
28F400BC
AB28F200BX-B90
29050
AB28F
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